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Part Manufacturer Description Datasheet BUY
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments
UC3612J Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments
UC3612DP Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments

T2D 70 diode

Catalog Datasheet MFG & Type PDF Document Tags

T2D DIODE

Abstract: T2D 70 diode SIEMENS Silicon PIN Diode BA 389 â'¢ Current-controlled RF resistor for switching and attenuating , current Vr = 30 V /H - 50 nA Diode capacitance Vr= 10 V,/= 1 MHz Vr = 0 V,/= 100 MHz Ct - 0.55 0.35 0.5 , 0 V,/= 100 MHz gv - 70 - nS Series inductance Ls - 2.5 - nH Siemens Aktiengeseiischaft 151 â  fl235b05 00fc,b5bM T2D â  Powered by ICminer.com Electronic-Library Service CopyRight 2003 BA 389 Forward characteristics If =/(Vf) Parallel conductance gt =/(Vr) Forward resistance /ï=/(/f) /= 100 MHz Diode capacitance
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T2D 62 diode

Abstract: T2D 98 DIODE ,) Turn-Off-Time W (ton=td(o +tf) iD Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time , ) tr t d(off) tf 5 900 150 70 2,5 f=1MHz VC =300V C I d=9A 1 AV 25 70 60 35 , *,=25â'˜C Forward Characteristics of Reverse Diode Typical Gate Charge Characteristic lp=f(Vso); W , notice! â  22307=12 0 0 0 4 b b 7 T2D t W paremet6r:0=t/T
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T2D 24 DIODE

Abstract: T2d 43 diode Charge 11 70 ns 43 61 nC nC 11 ^ _ Gate-Drain Charge 4 nC NDT455N , DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Is Drain-Source Diode Forward Voltage V so 0 VGS= Reverse Recovery Time V V - , Threshold Variation with Temperature. NDT455N Rev.F 34^74 OQBSnS T2D Typical Electrical , 1 2 5 0.2 0.4 0.6 0.8 1 1.2 VSD, BOOY DIODE FORWARD VOLTAGE (V) Figure
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T2D 24 DIODE T2d 43 diode T2D 65 DIODE T2d 61 diode T2D DIODE 42 diode T2D

T2D 22 diode

Abstract: T2D 56 DIODE ) Collector current (d.c.) - V ebo - 'c Collector current (peak value) - ' cm Reverse diode , = 2,5 K/W St 70 K/W THERMAL RESISTANCE* From junction to mounting base Rth , A; â'"V CE â' 3 V Diode, forward voltage l F = 1,5 A Switching times (between 10% and 90 , multiplying factor at the 496 Y March 1986 bbSBTBl DDBMbbS T2D tp (s) V q EO max
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T2D 22 diode T2D 56 DIODE diode t2d 05 T2D DIODE T2D 70 diode BDT60 BDT60B BDT61 BDT61A BDT61B BDT61C

T2D DIODE

Abstract: T2D DIODE 64 Vcc DC supply voltage -0.5 to +4.6 V l|k DC input diode current V| , performance. 711002t. DDTSñOO T2D May 11, 1994 6-27 This Material Copyrighted By Its Respective
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T2D DIODE 64 T2D DIODE 32 T2D DIODE 46 t2d 63 diode IN T2D DIODE T2D DIODE 63 74LVT273 LVT273 74LVT

T2D 96 diode

Abstract: T2D 78 diode + 0.5 Vo DC Output Voltage -0 .5 to V c c + 0 5 V l|K DC Input Diode Current ± 20 mA â'¢ok DC Output Diode Current ± 20 mA 'o DC Output Source Sink Current Per Output Pin ± 35 mA lee or *gnd pd Tstg = 70 fc mA 500 (*) mW - 6 5 , CHARACTERISTICS T2D â  S ^ Parameter Vcc V|H High Level Input Voltage 2.0 4.5 6.0 1.5
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T2D 96 diode T2D 78 diode T2D 44 diode t2d 76 diode value T2D DIODE 29 T2D 36 DIODE M54HC365/366 M74HC365/366 HC365 HC366 M54/74HC365 M54/74HC366

T2D DIODE 34

Abstract: Diode T2D od -2 P T.2D h -0 . -o . °b -Qb ha- 1.2D 'Oc-he^" 'Od-hd - -Oe -ö c -Od , Military Commercial Supply Voltage Military Commercial - 55°C to + 1 25"C 0°C to +70°C + 4.5V to + 5.5V + , Characteristics Symbol Min V|H V|L VCD VOH Input HIGH Voltage Input LOW Voltage Input Clamp Diode Voltage Output , 2.5 2.7 0.5 0.5 20.0 5.0 100 7.0 250 50 2.0 0.8 - 1 .2 54F/74F Typ Max V V V Min Recognized as a HIGH , 74F 54F TA,V CC = Mil Min 4.5 4.5 1.5 1.5 10.5 10.5 9.5 9.5 0 0 4.0 7.0 Max 74F TA>V c c = Com Min 3.0
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T2D DIODE 34 Diode T2D od T2D 75 diode T2D 85 diode T2D 95 diode T2D DIODE 06 54F/74F398 54F/74F399 74F398PC 54F398DM 74F398SC 54F398FM

T2D 24 DIODE

Abstract: T2d 43 diode utput D Current Output D 31 32 l0U T2D 30 31 CS Chip Select Current Output D , TC ge Power Supply Re|ection Ratio PSRR ±50 ±70 ta U T ±50 ±200 Output , k g ±1 ±4 V V V|fvj ha C IN 7.0 7.0 PF pF CouT 1 CoUT1 C q UT2 C qu , should be protected by Schottky diode clamps (H P5082-2835) from input pin to the supplies. A ll inputs
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MP7680 P7680 QDQ741Q

T2D DIODE 46

Abstract: T2D DIODE 48 Diode Voltage Vrr=Min. I[N=-1« mA -0.7 -1.2 V Ii Input 1IIOH Current V{ ('=Maxâ'ž V!N=V{'( 5 H-A , ! tpttL Propagation Delay Data to Input 1.5 7.0 1.5 1.5 6.5 1.5 5.1 1.5 4.6 ns 1,3 tpZH f !>/.!. , 7.0 1.5 5.9 1.5 5.6 ns 1,7,8 Parameter Description FCT244CT 'â'¢ " "WfWhÃ'Ã'tvt â , ( â'¢Y74KC,r240TQC; Q5 20-Lead (150-Mil) QSOP Qil ( 'YSdRf T2d(ITn\/TR ni, mi.
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T2D DIODE 48 T2D 78 T2D DIODE 41 T2D 41 DIODE T2D 47 DIODE diode 78 t2d CY54/74FCT240T CY54/74FCT244T FCT240T FCT244T Y54FC T240ATLMB

T2D 70 diode

Abstract: T2D DIODE 7 mA ±100 HA 200 -200 -7V < VC < 7V m mV mV 70 Single-Ended Receiver , Enable (TTL Compatible). A high level on this pin forces the 5-180 S51fl4bfl Q G l Q b T S T2D , ±25kV FiXDt RXOO GND "SCHOTTKY DIODE PREVENTS V ss FROM EXCEEDING GND ON POWER-UP OR POWER-DOWN V$s
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LTC1320 RS422/RS562 RS422 RS562 RS562/RS562

T2D 87 diode

Abstract: T2D 49 DIODE ) mJ dv/dt Peak Diode Recovery dv/dt ® 55 (See Fig. 30) V/ns Tj t STG Operating , - pF V q s - OV, VDS - 25V f = 1.0 MHz See Fig. 22 Source-Drain Diode Ratings and Characteristics © Parameter Min. Typ. Max. â s Continuous Source Current (Body Diode) â'" â'" 14 'SM Pulse Source Current (Body Diode) ® â'" â'" 56 Units A Test , f â'"; VSD Diode Forward Voltage â'" â'" 1.8 V â'¢rr Reverse Recovery Time
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T2D 87 diode T2D 49 DIODE Rectifier t2d IRHM7130 IRHM8130 1X106 4A55452 IRHM7130D IRHM7130U

marking A4t sot23

Abstract: A1t SOT23 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE , (DO34) 1PS59SB21 21 SC-59/SOT346 1N829 1N829 SOD68 (DO34) 1PS70SB10 7t0; 7-0 SC-70/SOT323 1N829A 1N829A SOD68 (DO34) 1PS70SB14 7t4; 7-4 SC-70/SOT323 1N914 1N914 PH SOD27 (DO35) 1PS70SB15 7t5; 7-5 SC-70/SOT323 1N4148 1N4148 PH SOD27 (DO35) 1PS70SB16 7t5; 7-5 SC-70/SOT323 1N4150 1N4150 PH SOD27 (DO35) 1PS70SB40 6t3; 6-3 SC-70
Philips Semiconductors
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marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 transistor marking codes A4p 1N5817 1N821 1N5818 1N821A 1N5819 1N823

marking A4t sot23

Abstract: PH C5V1 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE , ; 7-0 SC-70/SOT323 1N829A 1N829A SOD68 (DO34) 1PS70SB14 7t4; 7-4 SC-70/SOT323 1N914 1N914 PH SOD27 (DO35) 1PS70SB15 7t5; 7-5 SC-70/SOT323 1N4148 1N4148 PH SOD27 (DO35) 1PS70SB16 7t5; 7-5 SC-70/SOT323 1N4150 1N4150 PH SOD27 (DO35) 1PS70SB40 6t3; 6-3 SC-70/SOT323 1N4151 1N4151 PH SOD27 (DO35) 1PS70SB44 6t4; 6-4 SC-70
Philips Semiconductors
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T2D 79 diode C18 ph diode A4T SOT23 1n4148 sot23 A6t SOT23 Philips MARKING CODE a6t 1PS59SB10 1N823A 1PS59SB14 1N825 1PS59SB15 1N825A

T2D 96 diode

Abstract: SAA7350GP operation (+5 V) â'¢ -10 to +70 °C operating temperature range â'¢ Output interface for TDA1547 GENERAL , input diode current - +20 mA V0 DC output voltage -0.5 +6.5 V lo DC output source or sink current - , °C tamb operating ambient temperature range -10 +70 CC electrostatic handling; note 2 -1000 +1000 , . 5.5 70 5.5 50 +0.8 Vdd + 0.5 +10 10 UNIT mA mA HA pF VlL V,H LOW level input voltage , ) at 1.5 V 30 - 70 «V /o System clock o utput: XSYS1 note 6 tr output rise time note 5 - - 10 ns
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SAA7350 SAA7350GP philips saa7350gp T2D DIODE 49 T2D 98 DIODE T2D DIODE 96 SQT205AG D0007T 2896MH 9344MH

T2D 44 diode

Abstract: T2D DIODE 42 bunc lOUT2C !o UT2D !o u t i d r fbd v refd NC !0U T2D !o u t i d r fbd V refd AGND DGND , TC GE PSRR ta rn ±50 ±50 ±16 ±16 ±2 ±70 ±200 ppm/°C ppm/% nA AGain/ATemperature |AGain/AVDo| AV qq = , |L !lkg CIN CIN 7.0 7.0 2.4 0.8 ±1 2.4 0.8 ±4 V V (iA PF PF r in 3 V|N 5 ±10 7 ±25 3 , Schottky diode clamps (HP5082-2835) from input pin to the supplies. A ll inputs have protection diodes
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T2D 37 DIODE T2d 03 diode T2D DIODE 44 T2D DIODE 43 T2D 19 diode IDB77 TTL75 MP7680JN MP7680KN MP7680JE MP7680KE 3422L

philips diode PH 33D

Abstract: philips diode PH 33J Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE , ; 7-0 SC-70/SOT323 1N829A 1N829A SOD68 (DO34) 1PS70SB14 7t4; 7-4 SC-70/SOT323 1N914 1N914 PH SOD27 (DO35) 1PS70SB15 7t5; 7-5 SC-70/SOT323 1N4148 1N4148 PH SOD27 (DO35) 1PS70SB16 7t5; 7-5 SC-70/SOT323 1N4150 1N4150 PH SOD27 (DO35) 1PS70SB40 6t3; 6-3 SC-70/SOT323 1N4151 1N4151 PH SOD27 (DO35) 1PS70SB44 6t4; 6-4 SC-70
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philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph 1PS59SB16 1N827 1PS59SB20 1N827A SC-70/SOT323 1N4448

philips diode PH 33D

Abstract: PH C5V1 Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER 1N821 1N821A , 1N5817 1N5818 1N5819 10 14 15 16 20 21 7t0; 7-0 7t4; 7-4 7t5; 7-5 7t5; 7-5 6t3; 6-3 6t4; 6-4 6t5; 6-5 6t6 , SOD81 SC-59/SOT346 SC-59/SOT346 SC-59/SOT346 SC-59/SOT346 SC-59/SOT346 SC-59/SOT346 SC-70/SOT323 SC-70/SOT323 SC-70/SOT323 SC-70/SOT323 SC-70/SOT323 SC-70/SOT323 SC-70/SOT323 SC-70/SOT323 SC-74/SOT457 SC , -59/SOT346 SC-59/SOT346 SC-59/SOT346 SC-59/SOT346 SC-70/SOT323 SC-70/SOT323 Philips Semiconductors
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PH 33D PH33D ph33g PH 33G philips diode PH 37m ph c24 1N4531 1N4532 1N4728A 1N4729A 1N4730A 1N4731A

ZENER DIODE t2d

Abstract: zener t2d temperature 0 - +70 °C fident identification window width stereo 2.2 - 2.2 Hz dual 2.3 - 2.3 Hz tident , storage temperature -25 +150 °c Tamb operating ambient temperature 0 +70 °c Ves electrostatic , attenuation for notes 1 and 3 dual |ZSI , operation after switching ±10 mV PSRR power supply ripple rejection fr = 70 Hz; see Fig.9 50 65 - dB 'O , resistance 18.75 25 31.25 kQ V5(rms) Identification threshold voltage (RMS value) - 70 mV Ol loaded
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ZENER DIODE t2d zener t2d T2D 40 zener diode T2D 48 T2D zener Diode zener T2D TDA9847 1993F

T2D 87 diode

Abstract: T2D diode 89 70 75 80 mV Maximum Current Sense threshold (Low Range) VITH = 2.22V, ILIM = GND l , (Note 6) CLOAD = 3300pF Each Driver 30 ns BG/TG t2D Bottom Gate Off to Top Gate On Delay , ) 100 3870 G01 4 93 80 70 60 50 40 20 10 0 0.1 VIN = 12V VOUT = 3.3V fSW = 400kHz L = 0.56µH DCR = 1.8mΩ 1 10 LOAD CURRENT (A) 100 3870 G02 3 2.5 92 70 30 , CH1 5 0 60 0 10 20 30 40 50 60 70 80 TOTAL OUTPUT CURRENT (A) 50µs/DIV ILOAD
Linear Technology
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T2D diode 89 diode t2d 88 LTC3870 LTC3880/LTC3883 LTC3880 LTC3883 LTC3880/LTC3880-1 LTC3883/LTC3883-1

T2D diode 89

Abstract: l 70 75 80 mV Maximum Current Sense threshold (Low Range) VITH = 2.22V, ILIM = , Time (Note 6) CLOAD = 3300pF Each Driver 30 ns BG/TG t2D Bottom Gate Off to Top Gate On , 10 0 0.1 93 80 70 VIN = 12V VOUT = 1.8V fSW = 400kHz L = 0.56µH DCR = 1.8mΩ 1 , = 400kHz L = 0.56µH DCR = 1.8mΩ 1 10 LOAD CURRENT (A) 100 3870 G02 3 2.5 92 70 , LTC3880 CH0 LTC3880 CH1 LTC3870 CH0 LTC3870 CH1 5 0 60 0 10 20 30 40 50 60 70 80
Linear Technology
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TC3880/LTC3880-1 LTC3882 LTC2974 LTC2977 LTM4676
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