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DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756 visit Linear Technology - Now Part of Analog Devices
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592 visit Linear Technology - Now Part of Analog Devices
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518 visit Linear Technology - Now Part of Analog Devices
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1 visit Linear Technology - Now Part of Analog Devices
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

T2D 70 diode

Catalog Datasheet MFG & Type PDF Document Tags

T2D DIODE

Abstract: T2D 70 diode SIEMENS Silicon PIN Diode BA 389 â'¢ Current-controlled RF resistor for switching and attenuating , current Vr = 30 V /H - 50 nA Diode capacitance Vr= 10 V,/= 1 MHz Vr = 0 V,/= 100 MHz Ct - 0.55 0.35 0.5 , 0 V,/= 100 MHz gv - 70 - nS Series inductance Ls - 2.5 - nH Siemens Aktiengeseiischaft 151 â  fl235b05 00fc,b5bM T2D â  Powered by ICminer.com Electronic-Library Service CopyRight 2003 BA 389 Forward characteristics If =/(Vf) Parallel conductance gt =/(Vr) Forward resistance /ï=/(/f) /= 100 MHz Diode capacitance
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T2D 62 diode

Abstract: T2D 98 DIODE ,) Turn-Off-Time W (ton=td(o +tf) iD Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time , ) tr t d(off) tf 5 900 150 70 2,5 f=1MHz VC =300V C I d=9A 1 AV 25 70 60 35 , *,=25â'˜C Forward Characteristics of Reverse Diode Typical Gate Charge Characteristic lp=f(Vso); W , notice! â  22307=12 0 0 0 4 b b 7 T2D t W paremet6r:0=t/T
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T2D 24 DIODE

Abstract: T2d 43 diode Charge 11 70 ns 43 61 nC nC 11 ^ _ Gate-Drain Charge 4 nC NDT455N , DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Is Drain-Source Diode Forward Voltage V so 0 VGS= Reverse Recovery Time V V - , Threshold Variation with Temperature. NDT455N Rev.F 34^74 OQBSnS T2D Typical Electrical , 1 2 5 0.2 0.4 0.6 0.8 1 1.2 VSD, BOOY DIODE FORWARD VOLTAGE (V) Figure
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T2D 24 DIODE T2d 43 diode T2D 65 DIODE T2d 61 diode T2D DIODE 42 diode T2D

T2D 22 diode

Abstract: T2D 56 DIODE ) Collector current (d.c.) - V ebo - 'c Collector current (peak value) - ' cm Reverse diode , = 2,5 K/W St 70 K/W THERMAL RESISTANCE* From junction to mounting base Rth , A; â'"V CE â' 3 V Diode, forward voltage l F = 1,5 A Switching times (between 10% and 90 , multiplying factor at the 496 Y March 1986 bbSBTBl DDBMbbS T2D tp (s) V q EO max
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T2D 22 diode T2D 56 DIODE T2D DIODE diode t2d 05 T2D 70 diode BDT60 BDT60B BDT61 BDT61A BDT61B BDT61C

T2D DIODE

Abstract: T2D DIODE 64 Vcc DC supply voltage -0.5 to +4.6 V l|k DC input diode current V| , performance. 711002t. DDTSñOO T2D May 11, 1994 6-27 This Material Copyrighted By Its Respective
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T2D DIODE 64 T2D DIODE 32 T2D DIODE 46 t2d 63 diode IN T2D DIODE T2D DIODE 63 74LVT273 LVT273 74LVT

T2D 96 diode

Abstract: T2D 78 diode + 0.5 Vo DC Output Voltage -0 .5 to V c c + 0 5 V l|K DC Input Diode Current ± 20 mA â'¢ok DC Output Diode Current ± 20 mA 'o DC Output Source Sink Current Per Output Pin ± 35 mA lee or *gnd pd Tstg = 70 fc mA 500 (*) mW - 6 5 , CHARACTERISTICS T2D â  S ^ Parameter Vcc V|H High Level Input Voltage 2.0 4.5 6.0 1.5
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T2D 96 diode T2D 78 diode T2D 44 diode t2d 76 diode value T2D 19 diode T2D DIODE 29 M54HC365/366 M74HC365/366 HC365 HC366 M54/74HC365 M54/74HC366

T2D DIODE 34

Abstract: Diode T2D od -2 P T.2D h -0 . -o . °b -Qb ha- 1.2D 'Oc-he^" 'Od-hd - -Oe -ö c -Od , Military Commercial Supply Voltage Military Commercial - 55°C to + 1 25"C 0°C to +70°C + 4.5V to + 5.5V + , Characteristics Symbol Min V|H V|L VCD VOH Input HIGH Voltage Input LOW Voltage Input Clamp Diode Voltage Output , 2.5 2.7 0.5 0.5 20.0 5.0 100 7.0 250 50 2.0 0.8 - 1 .2 54F/74F Typ Max V V V Min Recognized as a HIGH , 74F 54F TA,V CC = Mil Min 4.5 4.5 1.5 1.5 10.5 10.5 9.5 9.5 0 0 4.0 7.0 Max 74F TA>V c c = Com Min 3.0
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T2D DIODE 34 Diode T2D od T2D 75 diode T2D 95 diode T2D 85 diode T2D DIODE 06 54F/74F398 54F/74F399 74F398PC 54F398DM 74F398SC 54F398FM

T2D 24 DIODE

Abstract: T2d 43 diode utput D Current Output D 31 32 l0U T2D 30 31 CS Chip Select Current Output D , TC ge Power Supply Re|ection Ratio PSRR ±50 ±70 ta U T ±50 ±200 Output , k g ±1 ±4 V V V|fvj ha C IN 7.0 7.0 PF pF CouT 1 CoUT1 C q UT2 C qu , should be protected by Schottky diode clamps (H P5082-2835) from input pin to the supplies. A ll inputs
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MP7680 P7680 QDQ741Q

T2D DIODE 46

Abstract: T2D DIODE 48 Diode Voltage Vrr=Min. I[N=-1« mA -0.7 -1.2 V Ii Input 1IIOH Current V{ ('=Maxâ'ž V!N=V{'( 5 H-A , ! tpttL Propagation Delay Data to Input 1.5 7.0 1.5 1.5 6.5 1.5 5.1 1.5 4.6 ns 1,3 tpZH f !>/.!. , 7.0 1.5 5.9 1.5 5.6 ns 1,7,8 Parameter Description FCT244CT 'â'¢ " "WfWhÃ'Ã'tvt â , ( â'¢Y74KC,r240TQC; Q5 20-Lead (150-Mil) QSOP Qil ( 'YSdRf T2d(ITn\/TR ni, mi.
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T2D DIODE 48 T2D 78 T2D DIODE 41 T2D 41 DIODE T2D 47 DIODE diode 78 t2d CY54/74FCT240T CY54/74FCT244T FCT240T FCT244T Y54FC T240ATLMB

T2D 70 diode

Abstract: T2D DIODE 7 mA ±100 HA 200 -200 -7V < VC < 7V m mV mV 70 Single-Ended Receiver , Enable (TTL Compatible). A high level on this pin forces the 5-180 S51fl4bfl Q G l Q b T S T2D , ±25kV FiXDt RXOO GND "SCHOTTKY DIODE PREVENTS V ss FROM EXCEEDING GND ON POWER-UP OR POWER-DOWN V$s
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LTC1320 RS422/RS562 RS422 RS562 RS562/RS562

T2D 87 diode

Abstract: T2D 49 DIODE ) mJ dv/dt Peak Diode Recovery dv/dt ® 55 (See Fig. 30) V/ns Tj t STG Operating , - pF V q s - OV, VDS - 25V f = 1.0 MHz See Fig. 22 Source-Drain Diode Ratings and Characteristics © Parameter Min. Typ. Max. â s Continuous Source Current (Body Diode) â'" â'" 14 'SM Pulse Source Current (Body Diode) ® â'" â'" 56 Units A Test , f â'"; VSD Diode Forward Voltage â'" â'" 1.8 V â'¢rr Reverse Recovery Time
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T2D 87 diode T2D 49 DIODE Rectifier t2d IRHM7130 IRHM8130 1X106 4A55452 IRHM7130D IRHM7130U

marking A4t sot23

Abstract: A1t SOT23 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE , (DO34) 1PS59SB21 21 SC-59/SOT346 1N829 1N829 SOD68 (DO34) 1PS70SB10 7t0; 7-0 SC-70/SOT323 1N829A 1N829A SOD68 (DO34) 1PS70SB14 7t4; 7-4 SC-70/SOT323 1N914 1N914 PH SOD27 (DO35) 1PS70SB15 7t5; 7-5 SC-70/SOT323 1N4148 1N4148 PH SOD27 (DO35) 1PS70SB16 7t5; 7-5 SC-70/SOT323 1N4150 1N4150 PH SOD27 (DO35) 1PS70SB40 6t3; 6-3 SC-70
Philips Semiconductors
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marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 transistor marking codes A4p 1N5817 1N821 1N5818 1N821A 1N5819 1N823

marking A4t sot23

Abstract: PH C5V1 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE , ; 7-0 SC-70/SOT323 1N829A 1N829A SOD68 (DO34) 1PS70SB14 7t4; 7-4 SC-70/SOT323 1N914 1N914 PH SOD27 (DO35) 1PS70SB15 7t5; 7-5 SC-70/SOT323 1N4148 1N4148 PH SOD27 (DO35) 1PS70SB16 7t5; 7-5 SC-70/SOT323 1N4150 1N4150 PH SOD27 (DO35) 1PS70SB40 6t3; 6-3 SC-70/SOT323 1N4151 1N4151 PH SOD27 (DO35) 1PS70SB44 6t4; 6-4 SC-70
Philips Semiconductors
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T2D 79 diode C18 ph diode A4T SOT23 1n4148 sot23 A6t SOT23 Philips MARKING CODE a6t 1PS59SB10 1N823A 1PS59SB14 1N825 1PS59SB15 1N825A

T2D 96 diode

Abstract: SAA7350GP operation (+5 V) â'¢ -10 to +70 °C operating temperature range â'¢ Output interface for TDA1547 GENERAL , input diode current - +20 mA V0 DC output voltage -0.5 +6.5 V lo DC output source or sink current - , °C tamb operating ambient temperature range -10 +70 CC electrostatic handling; note 2 -1000 +1000 , . 5.5 70 5.5 50 +0.8 Vdd + 0.5 +10 10 UNIT mA mA HA pF VlL V,H LOW level input voltage , ) at 1.5 V 30 - 70 «V /o System clock o utput: XSYS1 note 6 tr output rise time note 5 - - 10 ns
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SAA7350 SAA7350GP philips saa7350gp T2D DIODE 49 T2D 98 DIODE T2D DIODE 96 SQT205AG D0007T 2896MH 9344MH

T2D 44 diode

Abstract: T2D DIODE 42 bunc lOUT2C !o UT2D !o u t i d r fbd v refd NC !0U T2D !o u t i d r fbd V refd AGND DGND , TC GE PSRR ta rn ±50 ±50 ±16 ±16 ±2 ±70 ±200 ppm/°C ppm/% nA AGain/ATemperature |AGain/AVDo| AV qq = , |L !lkg CIN CIN 7.0 7.0 2.4 0.8 ±1 2.4 0.8 ±4 V V (iA PF PF r in 3 V|N 5 ±10 7 ±25 3 , Schottky diode clamps (HP5082-2835) from input pin to the supplies. A ll inputs have protection diodes
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T2D 37 DIODE T2d 03 diode T2D DIODE 44 T2D DIODE 43 IDB77 UT2B TTL75 MP7680JN MP7680KN MP7680JE MP7680KE 3422L

philips diode PH 33D

Abstract: philips diode PH 33J Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE , ; 7-0 SC-70/SOT323 1N829A 1N829A SOD68 (DO34) 1PS70SB14 7t4; 7-4 SC-70/SOT323 1N914 1N914 PH SOD27 (DO35) 1PS70SB15 7t5; 7-5 SC-70/SOT323 1N4148 1N4148 PH SOD27 (DO35) 1PS70SB16 7t5; 7-5 SC-70/SOT323 1N4150 1N4150 PH SOD27 (DO35) 1PS70SB40 6t3; 6-3 SC-70/SOT323 1N4151 1N4151 PH SOD27 (DO35) 1PS70SB44 6t4; 6-4 SC-70
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philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph 1PS59SB16 1N827 1PS59SB20 1N827A SC-70/SOT323 1N4448

philips diode PH 33D

Abstract: PH C5V1 Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER 1N821 1N821A , 1N5817 1N5818 1N5819 10 14 15 16 20 21 7t0; 7-0 7t4; 7-4 7t5; 7-5 7t5; 7-5 6t3; 6-3 6t4; 6-4 6t5; 6-5 6t6 , SOD81 SC-59/SOT346 SC-59/SOT346 SC-59/SOT346 SC-59/SOT346 SC-59/SOT346 SC-59/SOT346 SC-70/SOT323 SC-70/SOT323 SC-70/SOT323 SC-70/SOT323 SC-70/SOT323 SC-70/SOT323 SC-70/SOT323 SC-70/SOT323 SC-74/SOT457 SC , -59/SOT346 SC-59/SOT346 SC-59/SOT346 SC-59/SOT346 SC-70/SOT323 SC-70/SOT323 Philips Semiconductors
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PH 33D PH33D ph33g PH 33G philips diode PH 37m ph c24 1N4531 1N4532 1N4728A 1N4729A 1N4730A 1N4731A

ZENER DIODE t2d

Abstract: zener t2d temperature 0 - +70 °C fident identification window width stereo 2.2 - 2.2 Hz dual 2.3 - 2.3 Hz tident , storage temperature -25 +150 °c Tamb operating ambient temperature 0 +70 °c Ves electrostatic , attenuation for notes 1 and 3 dual |ZSI , operation after switching ±10 mV PSRR power supply ripple rejection fr = 70 Hz; see Fig.9 50 65 - dB 'O , resistance 18.75 25 31.25 kQ V5(rms) Identification threshold voltage (RMS value) - 70 mV Ol loaded
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ZENER DIODE t2d zener t2d T2D 40 zener diode T2D 48 T2D zener Diode zener T2D TDA9847 1993F

T2D diode 89

Abstract: T2D 87 diode 70 75 80 mV Maximum Current Sense threshold (Low Range) VITH = 2.22V, ILIM = GND l , (Note 6) CLOAD = 3300pF Each Driver 30 ns BG/TG t2D Bottom Gate Off to Top Gate On Delay , ) 100 3870 G01 4 93 80 70 60 50 40 20 10 0 0.1 VIN = 12V VOUT = 3.3V fSW = 400kHz L = 0.56µH DCR = 1.8mΩ 1 10 LOAD CURRENT (A) 100 3870 G02 3 2.5 92 70 30 , CH1 5 0 60 0 10 20 30 40 50 60 70 80 TOTAL OUTPUT CURRENT (A) 50µs/DIV ILOAD
Linear Technology
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T2D diode 89 diode t2d 88 LTC3870 LTC3880/LTC3883 LTC3880 LTC3883 LTC3880/LTC3880-1 LTC3883/LTC3883-1

T2D diode 89

Abstract: l 70 75 80 mV Maximum Current Sense threshold (Low Range) VITH = 2.22V, ILIM = , Time (Note 6) CLOAD = 3300pF Each Driver 30 ns BG/TG t2D Bottom Gate Off to Top Gate On , 10 0 0.1 93 80 70 VIN = 12V VOUT = 1.8V fSW = 400kHz L = 0.56µH DCR = 1.8mΩ 1 , = 400kHz L = 0.56µH DCR = 1.8mΩ 1 10 LOAD CURRENT (A) 100 3870 G02 3 2.5 92 70 , LTC3880 CH0 LTC3880 CH1 LTC3870 CH0 LTC3870 CH1 5 0 60 0 10 20 30 40 50 60 70 80
Linear Technology
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TC3880/LTC3880-1 LTC3882 LTC2974 LTC2977 LTM4676
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