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Part Manufacturer Description Datasheet BUY
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
ISL99125BDRZ-T Intersil Corporation 25A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
ISL99135BDRZ-T Intersil Corporation 35A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments

T2D 54 DIODE

Catalog Datasheet MFG & Type PDF Document Tags

T2D 85 diode

Abstract: T2D 65 DIODE Gate-to-Source Voltage ^ as Single Pulsed Avalanche Energy © 54 Ur Avalanche Current 0 4.5 A Repetitive Avalanche Energy Q 2.3 mJ Peak Diode Recovery dv/dt Q 6.5 , ® Source-Drain Diode Ratings and Characteristics Symbol Min. Typ. Max. Units Characteristic u Continuous Source Current Ism Pulsed-Source Current 0 - - 20 Vsd Diode Forward , BVâ'ž -BV dss â'"VD D N-CHANNEL POWER MOSFET IRLS510A Fig 15. Peak Diode
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T2D 85 diode T2D 65 DIODE T2D 8 diode T2D DIODE T2D 54 DIODE T2D DIODE 45 D3T23

T2D 96 diode

Abstract: T2D 78 diode M74HCXXX M1 M74HCXXX F1 â  PIN AND FUNCTION COMPATIBLE WITH 54/74LS365/366 Gà F1 Ceramic Frit , + 0.5 Vo DC Output Voltage -0 .5 to V c c + 0 5 V l|K DC Input Diode Current ± 20 mA â'¢ok DC Output Diode Current ± 20 mA 'o DC Output Source Sink Current , CHARACTERISTICS T2D â  S ^ Parameter Vcc V|H High Level Input Voltage 2.0 4.5 6.0 1.5 , Capacitance â'" â'" â'" â'" - 54/74HC365 54/74HC366 5 â'" 34 â'" 6 â  S G T H
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T2D 96 diode T2D 78 diode T2D 44 diode t2d 76 diode value T2D DIODE 29 T2D 36 DIODE M54HC365/366 M74HC365/366 HC365 HC366 M54/74HC365 M54/74HC366

T2d DIODE

Abstract: T2D DIODE 48 SEL 52 50 54 U7 16.384MHz 4 Vcc3v3 3 L1 FB U12C R6 R7 R8 Mon3v3 Mon1v8 , 85 92 103 117 124 131 137 144 158 170 177 183 190 197 D2 DIODE PWRJACK J17 4 , QXFRMR T2D 25 2 D13 PO300SA 23 22 1 5 D14 PO300SA 21 4 QXFRMR T2C 30 2 , Vdd3v3 Vdd3v3 RxAVdd TxAVdd 4 10 TxPVdd TxPCkDir 58 57 56 55 54 53 51 50
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T2D DIODE 48 T2D 66 diode T2D DIODE 46 T2D DIODE 49 T2d 86 diode T2D 83 DIODE 384MH PTH08080W LED-1206 XCF02S XRT86SH221 T86SH
Abstract: Supply (non-tracking) vs Supply (non-tracking) MAX -4 9 -72 -55 -54 0.7 0.4 0.15 0.5 20 , Output Impedance -1.5 25 -77 -55 -54 5.2 95 f = 100kHz to 100MHz S/N = 20 Log (0.7/(Vn â , Signal-to-Noise Ratio TYP ±30 -54 Vpc = ±4.5V to ±5.5V y « . = +4.5V to +5.5V y ,* = -4.5V to -5.5V TYP MIN -54 MIN CONDITIONS ±2.5 DC, r load > ioo n ±20 ±20 6.2 , ±4.5 ±2.6 -54 TEM PERA TURE RANGE Specification Storage V V mA £ i| pF ±3.0  -
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BUF600/601 320MH 900MH 300MH BUF601 OPA66O

ZENER DIODE t2d

Abstract: zener t2d (RMS value) 54% modulation B/G 250 mV L - 500 - mV Vo(rms) nominal output signal voltage (RMS value) 54% modulation - 500 - mV Vo(rms) clipping level of the output signal voltages (RMS value) THD , accordance with the transmitted signal. The device was designed for a nominal input signal (FM: 54 , Vp = 5 V; Tgmb = 25 °C; nominal input signal V^ 2 = 0.25 V RMS value (FM: 54% modulation is , voltage (RMS value) 54% modulation B/G L (only Vm) - 0.25 0.5 - V V Vi(rms) clipping voltage level (RMS
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ZENER DIODE t2d zener t2d T2D 40 zener diode T2D 48 T2D zener Diode zener T2D TDA9847 1993F

T2D DIODE 46

Abstract: T2D DIODE 48 107 104 155 153 154 SEL SEL SEL 52 50 54 U7 16.384MHz 4 Vcc3v3 3 L1 FB , Clk19M 2 77 D2 DIODE Vcc3v3 LIUClkIn R13 10 3 M0 M1 M2 19 20 18 AIN0 , QXFRMR T1A 40 2 D11 PO300SA 38 37 1 5 D12 PO300SA 36 4 QXFRMR T2D 25 2 , DLOOP RLOOPS ALOOP 58 57 56 55 54 53 51 50 TxA_D0 TxA_D1 TxA_D2 TxA_D3 TxA_D4 TxA_D5
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T2D 82 diode T2D 87 diode T3D 54 DIODE t3d diode T2D DIODE 81 T2D 79 diode XRT86SH221ES XRT75VL00

T2D DIODE

Abstract: T3D DIODE LREQ 54 103 76 112 CPCISW LPMESet MODE TEST S P0.2 P0.3 DONE R9 4.7k , DIODE + + LEDon# D61 2 2 4 50 49 48 47 46 43 42 41 39 38 37 36 35 34 , RTIP D12 PO300SA 36 4 RJ2 RJ45 RRNG QXFRMR T2D 25 2 TTIP D13 PO300SA 23 , T30Rst 39 88 90 1 RST T30RefClk 1 INT 14 15 9 R55 14 11 54 RRNG1 , 56 55 54 53 51 50 0.1uF TTIP0 TxPOS1 TxNEG1 TxCLK1 1 2 4 3 0.1uF G G
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T2D DIODE 94 AK9 RJ12 C1959 transistor ad149 T8046 T30L PMEAD30 93CS66 T86VSH328 T86VSH328SCH XRT86VSH328

XRT75VL00

Abstract: tms 374 cd 13 LREQ LRST# 6 RST P3.0 4 3 2 7 8 5 4 VDD + 0.1uF S AIN0 AIN1 54 103 , 2 4 C17 PAR CON PCIA_0 VCC5V C5 0.1uF IDSEL -CBE0 VCC3V3 DIODE C4 , D14 PO300SA 21 19 C131 16 2 D13 PO300SA 23 22 17 20 D21 4 QXFRMR T2D , 0.1uF E3Clk DS3Clk STS1Clk U3 MRNG1 T75L02 RST SCS SClk SDI SDO TTIP1 54 T9 , 34 36 38 58 57 56 55 54 53 51 50 R71 10 TxCap2AN TxCap2BN 44 RxD_Clk
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XRT86SH328 tms 374 cd 13 RJ19 T3D 81 DIODE RJ23 y2w15 XRT91L30 XRT86SH328ES XRT86SH3

MMBD2103

Abstract: ZENER DIODE t2d coloured letter (usually on extremely small diode packages). Colour, if significant, is shown in small type , from the type of device. For example, a voltage specified for a rectifier diode is usually the maximum PIV (peak inverse voltage) of the diode, but for a zener diode the operating (zener voltage) will be , output p-channel fet (any type) pin diode package pnp bipolar transistor protection, protected (as in , SOT323 Leaded Equivalent/Data Npn RF fT 7GHz PAD-5 5pA leakage diode pnp dtr 4k7+4k7 pnp dtr 4k7+4k7 DC
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MMBD2103 MMBD2101 MMBD2104 MMBD2102 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 BC846A FMMT3904 BZV49 BZV55 BAS32 BAS45

SMD Codes

Abstract: TRANSISTOR SMD T1P coloured letter (usually on extremely small diode packages). Colour, if significant, is shown in small type , from the type of device. For example, a voltage specified for a rectifier diode is usually the maximum PIV (peak inverse voltage) of the diode, but for a zener diode the operating (zener voltage) will be , output p-channel fet (any type) pin diode package pnp bipolar transistor protection, protected (as in , SC70 SC59 SOT89 EMT3 SC70 SC59 Leaded Equivalent/Data Npn RF fT 7GHz PAD-5 5pA leakage diode pnp dtr
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TRANSISTOR SMD T1P BAW92 schottky diode s6 81A smd transistor A6a a4s smd transistor Transistor SMD a7s BAV105 LL4148 LL4448 BB241 BB249 LL914

DIODE C136

Abstract: smd diode R616 100uF GND VCCA LXT9785_SS_SMII_DEMO B VCC 1.0uF + C10 1.0uF 100uF DIODE , D4 DIODE GND DIODE D3 VCC_EXT VCC + .001uF C17 Ferrite Bead FB1 C , % TXD_P1 Date: Size B Title GND TXD_P1 U1A 45.3 54 RXDO(SS) 55 N/C C286 CAP PAD , C 26 15 25 TRANSFORMER H1164 T2D 21 22 18 20 19 VCC_CT 23 16 17
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DIODE C136 smd diode R616 smd diode R622 smd diode R648 smd diode d136 T2D 21 LXD9785 1/10W ERJ-6ENF30R1V TP12SH8AQE TP62-71 IC149-208-061S5

LTM4609

Abstract: 20SVP150MX to Source Voltage VDS = 12V, Bias Current ISW = 10mA 50 ns t2d M2 Off to M1 On Delay , Hysteresis VEXTVCC EXTVCC Switch Drop Voltage l l 5.4 5.6 V 300 ICC = 20mA, VEXTVCC = , current is required through the EXTVCC switch than is specified, an external Schottky diode can be , none 5.4 Figure 12, 14 12, 20 Figure 6 0 BGA Heatsink 7.5 Figure 12, 14 12
Linear Technology
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LTM4609 20SVP150MX diode t3d panasonic 16VOUT LTM4609V 4609 36VIN 34VOUT LTC3780 LTC3785 LTM4600

DIODE T3D 9D

Abstract: Diode T3D 7d Voltage VDS = 12V, Bias Current ISW = 10mA 50 ns t2d M2 Off to M1 On Delay Drain to Source , Î"VEXTVCC EXTVCC Switch Drop Voltage l 5.7 5.4 ICC = 20mA, VEXTVCC = 6V 5.6 V 300 l , switch than is specified, an external Schottky diode can be interposed between the EXTVCC and INTVCC , Figure 6 400 None 5.4 Figure 12, 14 12, 20 Figure 6 0 BGA Heat Sink 7.5
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DIODE T3D 9D Diode T3D 7d P19Ab t2d 9d L464001

T3D 97 ZENER DIODE

Abstract: diode marking code t2d 63 CLOAD = 3300pF Synchronous Switch-On Delay Time 70 ns BG/TG t2D Bottom Gate Off to Top Gate , 100 NO LOAD 50 5.4 5.6 5.4 INTVCC VOLTAGE (V) EXTVCC AND INTVCC VOLTAGE (V) 300 , to Inductor. Voltage swing at this pin is from a Schottky diode (external) voltage drop below , capacitor is connected between the BOOST and SW pins and a Schottky diode is tied between the BOOST and , recharges during each off cycle through an external diode when the top MOSFET turns off. If the input
Linear Technology
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LTM4607 T3D 97 ZENER DIODE diode marking code t2d 63 T3D zener DIODE 24VOUT LT3825/LT3837 LTM4601/ LTM4601A LTM4601-1
Abstract: DFMAX ITRACK/SS VRUN ON VSENSE(MAX) TG tr TG tf BG tr BG tf TG/BG t1D BG/TG t2D tON(MIN) VINTVCCVIN , FIGURE 11 CIRCUIT EXTVCC AND INTVCC VOLTAGE (V) 6.0 5.8 5.6 5.4 5.2 5.0 4.8 4.6 4.4 4.2 300 SUPPLY , Voltages vs Temperature 5.5 INTVCC Line Regulation 5.4 5.3 EXTVCC RISING 5.2 EXTVCC , Schottky diode (external) voltage drop below ground to VIN. TG (Pin 13/Pin 11): High Current Gate Drive for , Side Floating Driver. A capacitor is connected between the BOOST and SW pins and a Schottky diode is Linear Technology
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LTC3834 LT3800 LTC3826/ LTC3826-1 LTC3827/ LTC3827-1
Abstract: Voltage VDS = 12V, Bias Current ISW = 10mA 50 ns t2d M2 Off to M1 On Delay Drain to Source , (HYS) EXTVCC Switchover Hysteresis Î"VEXTVCC EXTVCC Switch Drop Voltage l 5.7 5.4 , is specified, an external Schottky diode can be interposed between the EXTVCC and INTVCC pins , Figure 6 400 None 5.4 Figure 12, 14 12, 20 Figure 6 0 BGA Heat Sink 7.5 Linear Technology
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SSOP-28

T3D 97 ZENER DIODE

Abstract: LTM4607 D94 VCCA VCC + C10 1.0uF + C9 C8 GND 1.0uF 100uF DIODE + C137 + C138 , 127 134 148 GND DIODE D3 DIODE D4 VCC_EXT VCC FB1 + .001uF C17 Ferrite , ) 50 1% TXD_P1 C285 CAP PAD C286 CAP PAD RXD_P1 R418 146 74 GND TXD_P0 54 , H1164 T2D 21 22 18 20 19 VCC_CT 23 16 17 24 27 14 VCC_CT 28 13 , 4 5 6 7 8 J1G GND GND H RJSTK_8 8 7 6 5 4 3 2 1 49 50 51 52 53 54
Linear Technology
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T3D zener panasonic DIODE LTM4600HVMP LTM4602 LTM4603 LTM4603-1 LTM4601 LTM4604A

smd diode OE R612

Abstract: smd diode u1j VSENSE(MAX) TG tr TG tf BG tr BG tf TG/BG t1D BG/TG t2D tON(MIN) VINTVCCVIN VLDOVIN VINTVCCEXT VLDOEXT , CIRCUIT EXTVCC AND INTVCC VOLTAGE (V) 6.0 5.8 5.6 5.4 5.2 5.0 4.8 4.6 4.4 4.2 300 SUPPLY CURRENT (A , Temperature 5.5 INTVCC Line Regulation 5.4 5.3 EXTVCC RISING 5.2 EXTVCC FALLING 5.1 , Schottky diode (external) voltage drop below ground to VIN. TG (Pin 13/Pin 11): High Current Gate Drive for , Side Floating Driver. A capacitor is connected between the BOOST and SW pins and a Schottky diode is
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smd diode OE R612 smd diode u1j R645 ss smii CAP 103 2KV diode U1J ERJ6GEY0R00V MM74HC14M U14-29 SN74LVC244AD EP20K100QC20 SC1566CM-2
Abstract: t2D Bottom Gate Off to Top Gate On Delay CLOAD = 3300pF Top Switch-On Delay Time 70 ns , Regulation 5.5 6.0 5.8 250 200 150 300A LOAD 100 NO LOAD 50 5.4 5.6 5.4 INTVCC , diode (external) voltage drop below ground to VIN. TG (Pin 13/Pin 11): High Current Gate Drive for Top , Floating Driver. A capacitor is connected between the BOOST and SW pins and a Schottky diode is tied , through an external diode when the top MOSFET turns off. If the input voltage VIN decreases to a voltage Linear Technology
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