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T2 BC558 TRANSISTOR

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Abstract: 0.6 - 900 dB NF1 NF2 2.5 10 RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model , * COLLECTOR 1 MAXIMUM RATINGS Rating Collector-Emitter Voltage BC556 BC557 BC558 Collector-Base Voltage BC556 BC557 BC558 Emitter-Base Voltage Collector Current - Continuous Collector Current - Peak Base , BC558 BC556 BC557 BC558 BC556 BC557 BC558 BC556 BC557 BC558 BC556 BC557 BC558 V(BR)CEO V -65 -45 -30 -80 , , f = 100 MHz) BC556 BC557 BC558 fT Output Capacitance (VCB = -10 V, IC = 0, f = 1.0 MHz) Noise ON Semiconductor
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cbc550c BC550C TRANSISTOR hFE 8 BC558B 331 TRANSISTOR operation of BC557 TRANSISTOR bc550c transistor BC557 base collector emitter BC550C BC550C/D BC556B BC556BZL1 BC557AZL1 BC557B
Abstract: RATINGS Rating Collector-Emitter Voltage BC556 BC557 BC558 Collector-Base Voltage BC556 BC557 BC558 , mAdc, IB = 0) V(BR)CEO BC556 BC557 BC558 V(BR)CBO BC556 BC557 BC558 V(BR)EBO BC556 BC557 BC558 ICES BC556 BC557 BC558 BC556 BC557 BC558 ­ ­ ­ ­ ­ ­ ­2.0 ­2.0 ­2.0 ­ ­ ­ ­100 ­100 ­100 ­4.0 ­4.0 ­4.0 nA , Current­Gain ­ Bandwidth Product (IC = ­10 mA, VCE = ­5.0 V, f = 100 MHz) fT BC556 BC557 BC558 Cob NF BC556 BC557 BC558 hfe BC557 A Series Device B Series Devices C Series Devices 125 125 240 450 ­ ­ ­ ­ 900 260 ON Semiconductor
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bc558b transistor BC556b BC558B BC556BRL1 BC557ZL1 BC557A 2000/T 2000/A
Abstract: BC558 Emitter - Base Voltage 3 EMITTER â'65 â'45 â'30 BC556 BC557 BC558 Collector - , = 125°C) V(BR)CEO BC556 BC557 BC558 V V(BR)CBO BC556 BC557 BC558 V V(BR)EBO BC556 BC557 BC558 V ICES BC556 BC557 BC558 BC556 BC557 BC558 nA mA ON , = â'5.0 V, f = 100 MHz) fT BC556 BC557 BC558 Output Capacitance (VCB = â'10 V, IC = 0, f , BC558 dB hfe BC557 A Series Device B Series Devices C Series Devices â' 1. IC = â ON Semiconductor
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BC556BG BC557 transistor pin details BC556B/D
Abstract: mAdc, IB = 0) V(BR)CEO BC556 BC557 BC558 V(BR)CBO BC556 BC557 BC558 V(BR)EBO BC556 BC557 BC558 ICES BC556 BC557 BC558 BC556 BC557 BC558 - - - - - - ­2.0 ­2.0 ­2.0 - - - ­100 ­100 ­100 ­4.0 ­4.0 , , VCE = ­5.0 V) hFE BC557A BC556B/557B/558B BC557C BC556 BC557 BC558 BC557A BC556B/557B/558B BC557C , Current ­ Gain - Bandwidth Product (IC = ­10 mA, VCE = ­5.0 V, f = 100 MHz) fT BC556 BC557 BC558 Cob NF BC556 BC557 BC558 hfe BC556 BC557/558 BC557A BC556B/557B/558B BC557C 125 125 125 240 450 - - 220 330 Motorola
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BC557 MOTOROLA BC 557 PNP TRANSISTOR circuits BC558 motorola transistor BC 557B BC556/D 226AA BC558ZL1
Abstract: BC556 BC557 BC558 Collector-Base Voltage Vdc ­65 ­45 ­30 VCBO BC556 BC557 BC558 , BC558 V V(BR)CBO BC556 BC557 BC558 V V(BR)EBO BC556 BC557 BC558 V ICES BC556 BC557 BC558 BC556 BC557 BC558 http://onsemi.com 2 nA uA BC556B, BC557, A, B, C, BC558B , BC556 BC557 BC558 Output Capacitance (VCB = ­10 V, IC = 0, f = 1.0 MHz) Noise Figure (IC = ­0.2 , , VCE = 5.0 V, f = 1.0 kHz) Cob MHz NF BC556 BC557 BC558 dB hfe BC557 A Series ON Semiconductor
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BC557 pin out uses of bc557 BC557 application note free BC557 BC557 TRANSISTOR application information of BC557 BC557BRL1 BC557BZL1 BC558CZL1 BC558CRL1 BC558C BC558BZL1
Abstract: Emitter Voltage Value VCEO BC556 BC557 BC558 Collector - Base Voltage Vdc 3 EMITTER -65 -45 -30 VCBO BC556 BC557 BC558 Emitter - Base Voltage 2 BASE Unit Vdc -80 -50 , -20 V) (VCES = -20 V, TA = 125°C) V(BR)CEO BC556 BC557 BC558 V V(BR)CBO BC556 BC557 BC558 V V(BR)EBO BC556 BC557 BC558 V ICES BC556 BC557 BC558 BC556 BC557 BC558 nA , BC556 BC557 BC558 Output Capacitance (VCB = -10 V, IC = 0, f = 1.0 MHz) Noise Figure (IC = -0.2 ON Semiconductor
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transistor marking bc557 bc557bg BC557BRL1G pin diagram of transistor BC558 BC557BZL1G BC557 PNP TRANSISTOR
Abstract: RATINGS Rating Collector-Emitter Voltage BC556 BC557 BC558 Collector-Base Voltage BC556 BC557 BC558 , mAdc, IB = 0) V(BR)CEO BC556 BC557 BC558 V(BR)CBO BC556 BC557 BC558 V(BR)EBO BC556 BC557 BC558 ICES BC556 BC557 BC558 BC556 BC557 BC558 ­ ­ ­ ­ ­ ­ ­2.0 ­2.0 ­2.0 ­ ­ ­ ­100 ­100 ­100 ­4.0 ­4.0 ­4.0 nA , Current­Gain ­ Bandwidth Product (IC = ­10 mA, VCE = ­5.0 V, f = 100 MHz) fT BC556 BC557 BC558 Cob NF BC556 BC557 BC558 hfe BC557 A Series Device B Series Devices C Series Devices 125 125 240 450 ­ ­ ­ ­ 900 260 ON Semiconductor
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6885_BC556B T1 BC558 BC557CZL1 BC558BRL BC558BRL1
Abstract: 1 MAXIMUM RATINGS Rating Collector-Emitter Voltage BC556 BC557 BC558 Collector-Base Voltage BC556 BC557 BC558 Emitter-Base Voltage Collector Current - Continuous Collector Current - Peak Base , mAdc, IB = 0) V(BR)CEO BC556 BC557 BC558 V(BR)CBO BC556 BC557 BC558 V(BR)EBO BC556 BC557 BC558 ICES BC556 BC557 BC558 BC556 BC557 BC558 - - - - - - ­2.0 ­2.0 ­2.0 - - - ­100 ­100 ­100 ­4.0 ­4.0 , DC Current Gain (IC = ­10 uAdc, VCE = ­5.0 V) hFE BC557A BC556B/557B/558B BC557C BC556 BC557 BC558 ON Semiconductor
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transistor IC 557B BC557 bc556 bc558b transistor APPLICATION OF BC557 transistor
Abstract: ­20 V, TA = 125°C) V(BR)CEO BC556 BC557 BC558 V V(BR)CBO BC556 BC557 BC558 V V(BR)EBO BC556 BC557 BC558 V ICES BC556 BC557 BC558 BC556 BC557 BC558 Motorola , BC557 BC558 BC557A BC556B/557B/558B BC557C BC557A BC556B/557B/558B BC557C Collector ­ Emitter , Current ­ Gain - Bandwidth Product (IC = ­10 mA, VCE = ­5.0 V, f = 100 MHz) fT BC556 BC557 BC558 , , f = 1.0 kHz) Cob MHz NF BC556 BC557 BC558 dB hfe BC556 BC557/558 BC557A BC556B Motorola
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transistor BC 557 BC556 Motorola
Abstract: ­20 V, TA = 125°C) V(BR)CEO BC556 BC557 BC558 V V(BR)CBO BC556 BC557 BC558 V V(BR)EBO BC556 BC557 BC558 V ICES BC556 BC557 BC558 BC556 BC557 BC558 Motorola , BC557 BC558 BC557A BC556B/557B/558B BC557C BC557A BC556B/557B/558B BC557C Collector ­ Emitter , Current ­ Gain - Bandwidth Product (IC = ­10 mA, VCE = ­5.0 V, f = 100 MHz) fT BC556 BC557 BC558 , 1.0 kHz) Cob MHz NF BC556 BC557 BC558 dB hfe BC556 BC557/558 BC557A BC556B/557B Motorola
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557B 558B transistor bc 556 datasheet transistor bc 556 t2 BC558 pin out TRANSISTOR bc557
Abstract: ­20 V, TA = 125°C) V(BR)CEO BC556 BC557 BC558 V V(BR)CBO BC556 BC557 BC558 V V(BR)EBO BC556 BC557 BC558 V ICES BC556 BC557 BC558 BC556 BC557 BC558 Motorola , BC557 BC558 BC557A BC556B/557B/558B BC557C BC557A BC556B/557B/558B BC557C Collector ­ Emitter , Current ­ Gain - Bandwidth Product (IC = ­10 mA, VCE = ­5.0 V, f = 100 MHz) fT BC556 BC557 BC558 , 1.0 kHz) Cob MHz NF BC556 BC557 BC558 dB hfe BC556 BC557/558 BC557A BC556B/557B Motorola
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BC556B MOTOROLA
Abstract: Emitter Voltage Value VCEO BC556 BC557 BC558 Collector - Base Voltage Vdc 3 EMITTER -65 -45 -30 VCBO BC556 BC557 BC558 Emitter - Base Voltage 2 BASE Unit Vdc -80 -50 , Current (VCES = -40 V) (VCES = -20 V) (VCES = -20 V, TA = 125°C) V(BR)CEO BC556 BC557 BC558 V V(BR)CBO BC556 BC557 BC558 V V(BR)EBO BC556 BC557 BC558 V ICES BC556 BC557 BC558 BC556 BC557 BC558 nA mA ON CHARACTERISTICS DC Current Gain (IC = -10 mAdc, VCE = ON Semiconductor
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BC55x BC557AZL1G CBC557 CBC556
Abstract: . Kleine 1k R1 T1 5V BC558 D1 green groen grün vert T2 BC548 BC548 BC558 D2 , , if for instance, the ­5 V line fails, transistor T3 remains on but the base-emitter junction of T2 is no longer biased, so that this transistor is cut off. When this happens, there is no current Dallas Semiconductor
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BC548 TRANSISTOR REPLACEMENT BC548 TRANSISTOR SMD BC558 pinout TRANSISTOR REPLACEMENT GUIDE elektor T2 BC548 R14/R15 TL082 DEM-OPA368 OPA3682
Abstract: ­5.0 ­100 625 5.0 1.5 12 ­ 55 to +150 BC558 ­30 ­30 Unit Vdc Vdc Vdc mAdc mW mW/°C Watt mW/°C °C 1 2 , )CEO BC556 BC557 BC558 V(BR)CBO BC556 BC557 BC558 V(BR)EBO BC556 BC557 BC558 ICES BC556 BC557 BC558 BC556 BC557 BC558 - - - - - - ­2.0 ­2.0 ­2.0 - - - ­100 ­100 ­100 ­4.0 ­4.0 ­4.0 nA ­5.0 ­5.0 , BC558 BC557A BC556B/557B/558B BC557C BC557A BC556B/557B/558B BC557C VCE(sat) - - - VBE(sat) - - VBE , , f = 100 MHz) fT BC556 BC557 BC558 Cob NF BC556 BC557 BC558 hfe BC556 BC557/558 BC557A BC556B/557B ON Semiconductor
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BC557 equivalent bc556b equivalent transistor equivalent A BC557 BC557C equivalent bc558b equivalent bc556 equivalent
Abstract: low voltage of the base of transistor T2 causes it to remain shut, allowing resistor R5 to pull the , detector activates, transistor T1 closes, T2 opens and the current is: V CC I , Recommended Tolerance T1, T2 BC558/BC888/2N3906 ICE 2.5 mA, VCE 8 V, /hFE 100 T3 BC548/BC848 , 4183A­80C51­11/02 In Table 2 the transistor T2 can source more current. The Vbe constant is approximately , Values Component 3.0V 4.5V Recommended Tolerance T1, T2 BC558/BC888/2N3906 ICE 2.5 mA Atmel
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t1,t2 BC548 BC548 Texas Instruments MC7805 applications bc888 Texas instruments BC558 T2-BC558
Abstract: stage. Under normal operation, the low voltage of the base of transistor T2 causes it to remain shut , detector activates, transistor T1 closes, T2 opens and the current is: V CC I , Tolerance T1, T2 BC548/BC848/2N3904 ICE 2.5 mA, VCE 8 V, /hFE 100 T3 BC558/BC858/2N3906 , R1 R3 C3 R5 , by the resistors R1 and R2 in relation to the critical voltage of transistor T1. Under normal Atmel
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AVR180 MAX811 MAX809 BC558 transistor BC558 driver AT90S8515 1051B
Abstract: stage. Under normal operation, the low voltage of the base of transistor T2 causes it to remain shut , activates, transistor T1 closes, T2 opens and the current is: V CC I , Tolerance T1, T2 BC548/BC848/2N3904 ICE 2.5 mA, VCE 8 V, /hFE 100 T3 BC558/BC858/2N3906 , R1 R3 C3 R5 , by the resistors R1 and R2 in relation to the critical voltage of transistor T1. Under normal Atmel
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tBC558 AT90S1200 T1 BC558 TRANSISTOR AT90S4414 transistor bc548 bp
Abstract: deflection transistor BU2532AL · DC controlled linearity corrector PE4025/01 · EHT transformer , transformer and a high-speed switching line output transistor BU2532AL. To obtain optimum scan performance , resulting in a burst-mode operation of the SMPS. Transistor T10 and T11 act as comparator to control the , transistor. Diode D401 and resistor R403 are added for protection. 3.4.2 Line driver and output stage , stage (typically 1.8 W) capable of driving the line output transistor over a wide frequency range. The Philips Semiconductors
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TDA8447 TU305B2 AT2097 TRANSISTOR D405 flyback transformer philips AT2097 D409 transistor CCM420 AN97032
Abstract: PNP EPITAXIAL SILICON TRANSISTOR Package:SOT-23 SURFACE MOUNT SMALL SIGNAL TRANSISTORS , Ic=0 BC856A-BC858C SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR SURFACE , EPITAXIAL SILICON TRANSISTOR ­1.0 VCE= ­10 V T A = 25°C ­0.9 T A = 25°C 1.5 ­0.8 V , Yiguang Electronic Joint stock Co., Ltd BC856A-BC858C PNP EPITAXIAL SILICON TRANSISTOR ­1.0 T J , BC856A-BC858C TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR r( t), TRANSIENT THERMAL RESISTANCE -
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BC557 sot-23 BC856BLT1 bc857clt1 BC846-BC848 BC856 BC857 BC858
Abstract: . Under normal operation, the low voltage of the base of transistor T2 causes it to remain shut , ) When voltage drops to the level where the detector activates, transistor T1 closes, T2 opens and the , T1, T2 BC548 / BC848 / 2N3904 ICE 2.5 mA, VCE 8 V, /hFE 100 T3 BC558 / BC858 / 2N3906 , . Low-Power Consumption Brown-Out Detector VCC R4 R1 R3 R5 , R1 and R2 in relation to the critical voltage of transistor T1. Under normal operation, this Atmel
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