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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil

T2 BC558 TRANSISTOR

Catalog Datasheet MFG & Type PDF Document Tags

cbc550c

Abstract: transistor BC557 base collector emitter 0.6 - 900 dB NF1 NF2 2.5 10 RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model , * COLLECTOR 1 MAXIMUM RATINGS Rating Collector-Emitter Voltage BC556 BC557 BC558 Collector-Base Voltage BC556 BC557 BC558 Emitter-Base Voltage Collector Current - Continuous Collector Current - Peak Base , BC558 BC556 BC557 BC558 BC556 BC557 BC558 BC556 BC557 BC558 BC556 BC557 BC558 V(BR)CEO V -65 -45 -30 -80 , , f = 100 MHz) BC556 BC557 BC558 fT Output Capacitance (VCB = -10 V, IC = 0, f = 1.0 MHz) Noise
ON Semiconductor
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cbc550c transistor BC557 base collector emitter hFE 8 BC558B 331 TRANSISTOR operation of BC557 TRANSISTOR BC550C TRANSISTOR bc550c BC550C BC550C/D BC556B BC556BZL1 BC557AZL1 BC557B

BC556B

Abstract: bc558b RATINGS Rating Collector-Emitter Voltage BC556 BC557 BC558 Collector-Base Voltage BC556 BC557 BC558 , mAdc, IB = 0) V(BR)CEO BC556 BC557 BC558 V(BR)CBO BC556 BC557 BC558 V(BR)EBO BC556 BC557 BC558 ICES BC556 BC557 BC558 BC556 BC557 BC558 ­ ­ ­ ­ ­ ­ ­2.0 ­2.0 ­2.0 ­ ­ ­ ­100 ­100 ­100 ­4.0 ­4.0 ­4.0 nA , Current­Gain ­ Bandwidth Product (IC = ­10 mA, VCE = ­5.0 V, f = 100 MHz) fT BC556 BC557 BC558 Cob NF BC556 BC557 BC558 hfe BC557 A Series Device B Series Devices C Series Devices 125 125 240 450 ­ ­ ­ ­ 900 260
ON Semiconductor
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bc558b transistor BC556b BC558B BC556BRL1 BC557ZL1 BC557A 2000/T 2000/A

BC557

Abstract: BC557 transistor pin details BC558 Emitter - Base Voltage 3 EMITTER â'65 â'45 â'30 BC556 BC557 BC558 Collector - , = 125°C) V(BR)CEO BC556 BC557 BC558 V V(BR)CBO BC556 BC557 BC558 V V(BR)EBO BC556 BC557 BC558 V ICES BC556 BC557 BC558 BC556 BC557 BC558 nA mA ON , = â'5.0 V, f = 100 MHz) fT BC556 BC557 BC558 Output Capacitance (VCB = â'10 V, IC = 0, f , BC558 dB hfe BC557 A Series Device B Series Devices C Series Devices â' 1. IC = â
ON Semiconductor
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BC557 transistor pin details BC556BG BC556B/D

BC557A

Abstract: BC557 MOTOROLA mAdc, IB = 0) V(BR)CEO BC556 BC557 BC558 V(BR)CBO BC556 BC557 BC558 V(BR)EBO BC556 BC557 BC558 ICES BC556 BC557 BC558 BC556 BC557 BC558 - - - - - - ­2.0 ­2.0 ­2.0 - - - ­100 ­100 ­100 ­4.0 ­4.0 , , VCE = ­5.0 V) hFE BC557A BC556B/557B/558B BC557C BC556 BC557 BC558 BC557A BC556B/557B/558B BC557C , Current ­ Gain - Bandwidth Product (IC = ­10 mA, VCE = ­5.0 V, f = 100 MHz) fT BC556 BC557 BC558 Cob NF BC556 BC557 BC558 hfe BC556 BC557/558 BC557A BC556B/557B/558B BC557C 125 125 125 240 450 - - 220 330
Motorola
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BC557 MOTOROLA BC558 motorola transistor BC 557B BC 557 PNP TRANSISTOR circuits BC556/D 226AA BC558ZL1

operation of BC557 TRANSISTOR

Abstract: BC557 pin out BC556 BC557 BC558 Collector-Base Voltage Vdc ­65 ­45 ­30 VCBO BC556 BC557 BC558 , BC558 V V(BR)CBO BC556 BC557 BC558 V V(BR)EBO BC556 BC557 BC558 V ICES BC556 BC557 BC558 BC556 BC557 BC558 http://onsemi.com 2 nA µA BC556B, BC557, A, B, C, BC558B , BC556 BC557 BC558 Output Capacitance (VCB = ­10 V, IC = 0, f = 1.0 MHz) Noise Figure (IC = ­0.2 , , VCE = 5.0 V, f = 1.0 kHz) Cob MHz NF BC556 BC557 BC558 dB hfe BC557 A Series
ON Semiconductor
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BC557 pin out uses of bc557 BC557 application note free BC557 BC557 TRANSISTOR application information of BC557 BC557BRL1 BC557BZL1 BC558CZL1 BC558CRL1 BC558C BC558BZL1

BC557 transistor pin details

Abstract: transistor marking bc557 Emitter Voltage Value VCEO BC556 BC557 BC558 Collector - Base Voltage Vdc 3 EMITTER -65 -45 -30 VCBO BC556 BC557 BC558 Emitter - Base Voltage 2 BASE Unit Vdc -80 -50 , -20 V) (VCES = -20 V, TA = 125°C) V(BR)CEO BC556 BC557 BC558 V V(BR)CBO BC556 BC557 BC558 V V(BR)EBO BC556 BC557 BC558 V ICES BC556 BC557 BC558 BC556 BC557 BC558 nA , BC556 BC557 BC558 Output Capacitance (VCB = -10 V, IC = 0, f = 1.0 MHz) Noise Figure (IC = -0.2
ON Semiconductor
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transistor marking bc557 bc557bg BC557BRL1G pin diagram of transistor BC558 BC557BZL1G BC557 PNP TRANSISTOR

BC556B

Abstract: bc558b RATINGS Rating Collector-Emitter Voltage BC556 BC557 BC558 Collector-Base Voltage BC556 BC557 BC558 , mAdc, IB = 0) V(BR)CEO BC556 BC557 BC558 V(BR)CBO BC556 BC557 BC558 V(BR)EBO BC556 BC557 BC558 ICES BC556 BC557 BC558 BC556 BC557 BC558 ­ ­ ­ ­ ­ ­ ­2.0 ­2.0 ­2.0 ­ ­ ­ ­100 ­100 ­100 ­4.0 ­4.0 ­4.0 nA , Current­Gain ­ Bandwidth Product (IC = ­10 mA, VCE = ­5.0 V, f = 100 MHz) fT BC556 BC557 BC558 Cob NF BC556 BC557 BC558 hfe BC557 A Series Device B Series Devices C Series Devices 125 125 240 450 ­ ­ ­ ­ 900 260
ON Semiconductor
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6885_BC556B T1 BC558 BC557/bc557 to92 BC557CZL1 BC558BRL BC558BRL1

bc558b

Abstract: bc556b 1 MAXIMUM RATINGS Rating Collector-Emitter Voltage BC556 BC557 BC558 Collector-Base Voltage BC556 BC557 BC558 Emitter-Base Voltage Collector Current - Continuous Collector Current - Peak Base , mAdc, IB = 0) V(BR)CEO BC556 BC557 BC558 V(BR)CBO BC556 BC557 BC558 V(BR)EBO BC556 BC557 BC558 ICES BC556 BC557 BC558 BC556 BC557 BC558 - - - - - - ­2.0 ­2.0 ­2.0 - - - ­100 ­100 ­100 ­4.0 ­4.0 , DC Current Gain (IC = ­10 µAdc, VCE = ­5.0 V) hFE BC557A BC556B/557B/558B BC557C BC556 BC557 BC558
ON Semiconductor
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transistor IC 557B BC557 bc556 T2 BC558 TRANSISTOR APPLICATION OF BC557 transistor BC557C/558C bc558b transistor

BC556B

Abstract: BC557A ­20 V, TA = 125°C) V(BR)CEO BC556 BC557 BC558 V V(BR)CBO BC556 BC557 BC558 V V(BR)EBO BC556 BC557 BC558 V ICES BC556 BC557 BC558 BC556 BC557 BC558 Motorola , BC557 BC558 BC557A BC556B/557B/558B BC557C BC557A BC556B/557B/558B BC557C Collector ­ Emitter , Current ­ Gain - Bandwidth Product (IC = ­10 mA, VCE = ­5.0 V, f = 100 MHz) fT BC556 BC557 BC558 , , f = 1.0 kHz) Cob MHz NF BC556 BC557 BC558 dB hfe BC556 BC557/558 BC557A BC556B
Motorola
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BC556 Motorola transistor BC 557

transistor BC 557B

Abstract: BC557A ­20 V, TA = 125°C) V(BR)CEO BC556 BC557 BC558 V V(BR)CBO BC556 BC557 BC558 V V(BR)EBO BC556 BC557 BC558 V ICES BC556 BC557 BC558 BC556 BC557 BC558 Motorola , BC557 BC558 BC557A BC556B/557B/558B BC557C BC557A BC556B/557B/558B BC557C Collector ­ Emitter , Current ­ Gain - Bandwidth Product (IC = ­10 mA, VCE = ­5.0 V, f = 100 MHz) fT BC556 BC557 BC558 , 1.0 kHz) Cob MHz NF BC556 BC557 BC558 dB hfe BC556 BC557/558 BC557A BC556B/557B
Motorola
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557B 558B pin out TRANSISTOR bc557 transistor bc 556 datasheet transistors BC 557 transistor bc 556

bc557

Abstract: BC557A ­20 V, TA = 125°C) V(BR)CEO BC556 BC557 BC558 V V(BR)CBO BC556 BC557 BC558 V V(BR)EBO BC556 BC557 BC558 V ICES BC556 BC557 BC558 BC556 BC557 BC558 Motorola , BC557 BC558 BC557A BC556B/557B/558B BC557C BC557A BC556B/557B/558B BC557C Collector ­ Emitter , Current ­ Gain - Bandwidth Product (IC = ­10 mA, VCE = ­5.0 V, f = 100 MHz) fT BC556 BC557 BC558 , 1.0 kHz) Cob MHz NF BC556 BC557 BC558 dB hfe BC556 BC557/558 BC557A BC556B/557B
Motorola
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BC556B MOTOROLA

T2 BC558 TRANSISTOR

Abstract: BC55x Emitter Voltage Value VCEO BC556 BC557 BC558 Collector - Base Voltage Vdc 3 EMITTER -65 -45 -30 VCBO BC556 BC557 BC558 Emitter - Base Voltage 2 BASE Unit Vdc -80 -50 , Current (VCES = -40 V) (VCES = -20 V) (VCES = -20 V, TA = 125°C) V(BR)CEO BC556 BC557 BC558 V V(BR)CBO BC556 BC557 BC558 V V(BR)EBO BC556 BC557 BC558 V ICES BC556 BC557 BC558 BC556 BC557 BC558 nA mA ON CHARACTERISTICS DC Current Gain (IC = -10 mAdc, VCE =
ON Semiconductor
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BC55x BC557AZL1G CBC556 CBC557

BC548 TRANSISTOR REPLACEMENT

Abstract: BC548 TRANSISTOR SMD . Kleine 1k R1 T1 5V BC558 D1 green groen grün vert T2 BC548 BC548 BC558 D2 , , if for instance, the ­5 V line fails, transistor T3 remains on but the base-emitter junction of T2 is no longer biased, so that this transistor is cut off. When this happens, there is no current
Dallas Semiconductor
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BC548 TRANSISTOR REPLACEMENT BC548 TRANSISTOR SMD BC558 pinout TRANSISTOR REPLACEMENT GUIDE elektor T2 BC548 R14/R15 TL082 DEM-OPA368 OPA3682

BC557 equivalent

Abstract: bc556b equivalent ­5.0 ­100 625 5.0 1.5 12 ­ 55 to +150 BC558 ­30 ­30 Unit Vdc Vdc Vdc mAdc mW mW/°C Watt mW/°C °C 1 2 , )CEO BC556 BC557 BC558 V(BR)CBO BC556 BC557 BC558 V(BR)EBO BC556 BC557 BC558 ICES BC556 BC557 BC558 BC556 BC557 BC558 - - - - - - ­2.0 ­2.0 ­2.0 - - - ­100 ­100 ­100 ­4.0 ­4.0 ­4.0 nA ­5.0 ­5.0 , BC558 BC557A BC556B/557B/558B BC557C BC557A BC556B/557B/558B BC557C VCE(sat) - - - VBE(sat) - - VBE , , f = 100 MHz) fT BC556 BC557 BC558 Cob NF BC556 BC557 BC558 hfe BC556 BC557/558 BC557A BC556B/557B
ON Semiconductor
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BC557 equivalent bc556b equivalent BC557C equivalent transistor equivalent A BC557 bc558b equivalent bc556 equivalent

External Brown-out Protection for C51 Microcontrollers with Active High Reset Input

Abstract: t1,t2 BC548 low voltage of the base of transistor T2 causes it to remain shut, allowing resistor R5 to pull the , detector activates, transistor T1 closes, T2 opens and the current is: V CC I , Recommended Tolerance T1, T2 BC558/BC888/2N3906 ICE 2.5 mA, VCE 8 V, /hFE 100 T3 BC548/BC848 , 4183A­80C51­11/02 In Table 2 the transistor T2 can source more current. The Vbe constant is approximately , Values Component 3.0V 4.5V Recommended Tolerance T1, T2 BC558/BC888/2N3906 ICE 2.5 mA
Atmel
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External Brown-out Protection for C51 Microcontrollers with Active High Reset Input t1,t2 BC548 BC548 Texas Instruments MC7805 applications bc888 Texas instruments BC558

AVR180: External Brown-Out Protection

Abstract: T1 BC558 stage. Under normal operation, the low voltage of the base of transistor T2 causes it to remain shut , detector activates, transistor T1 closes, T2 opens and the current is: V CC I , Tolerance T1, T2 BC548/BC848/2N3904 ICE 2.5 mA, VCE 8 V, /hFE 100 T3 BC558/BC858/2N3906 , R1 R3 C3 R5 , by the resistors R1 and R2 in relation to the critical voltage of transistor T1. Under normal
Atmel
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AVR180 AVR180: External Brown-Out Protection AT90S1200 AT90S4414 AT90S8515 MAX809 1051B

t1,t2 BC548

Abstract: tBC558 stage. Under normal operation, the low voltage of the base of transistor T2 causes it to remain shut , activates, transistor T1 closes, T2 opens and the current is: V CC I , Tolerance T1, T2 BC548/BC848/2N3904 ICE 2.5 mA, VCE 8 V, /hFE 100 T3 BC558/BC858/2N3906 , R1 R3 C3 R5 , by the resistors R1 and R2 in relation to the critical voltage of transistor T1. Under normal
Atmel
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tBC558 transistor bc548 bp T1 BC558 TRANSISTOR MAX811

flyback transformer philips TV EHT AT2097

Abstract: TDA8447 deflection transistor BU2532AL · DC controlled linearity corrector PE4025/01 · EHT transformer , transformer and a high-speed switching line output transistor BU2532AL. To obtain optimum scan performance , resulting in a burst-mode operation of the SMPS. Transistor T10 and T11 act as comparator to control the , transistor. Diode D401 and resistor R403 are added for protection. 3.4.2 Line driver and output stage , stage (typically 1.8 W) capable of driving the line output transistor over a wide frequency range. The
Philips Semiconductors
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flyback transformer philips TV EHT AT2097 TDA8447 TU305B2 AT2097 TRANSISTOR D405 flyback transformer philips AT2097 CCM420 AN97032

BC557

Abstract: transistor marking bc557 PNP EPITAXIAL SILICON TRANSISTOR Package:SOT-23 SURFACE MOUNT SMALL SIGNAL TRANSISTORS , Ic=0 BC856A-BC858C SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR SURFACE , EPITAXIAL SILICON TRANSISTOR ­1.0 VCE= ­10 V T A = 25°C ­0.9 T A = 25°C 1.5 ­0.8 V , Yiguang Electronic Joint stock Co., Ltd BC856A-BC858C PNP EPITAXIAL SILICON TRANSISTOR ­1.0 T J , BC856A-BC858C TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR r( t), TRANSIENT THERMAL RESISTANCE
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BC557 sot-23 BC856BLT1 bc857clt1 BC846-BC848 BC856 BC857 BC858

T1 BC558

Abstract: max8091 . Under normal operation, the low voltage of the base of transistor T2 causes it to remain shut , ) When voltage drops to the level where the detector activates, transistor T1 closes, T2 opens and the , T1, T2 BC548 / BC848 / 2N3904 ICE 2.5 mA, VCE 8 V, /hFE 100 T3 BC558 / BC858 / 2N3906 , . Low-Power Consumption Brown-Out Detector VCC R4 R1 R3 R5 , R1 and R2 in relation to the critical voltage of transistor T1. Under normal operation, this
Atmel
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max8091
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