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10112690-T03-09ULF Amphenol FCi Board Connector, 18 Contact(s), 2 Row(s), Male, Right Angle, 0.079 inch Pitch, Surface Mount Terminal, Black Insulator, Plug, ROHS COMPLIANT visit Digikey Buy
10112684-T03-09ULF Amphenol FCi Board Connector, 9 Contact(s), 1 Row(s), Male, Right Angle, 0.079 inch Pitch, Surface Mount Terminal, Black Insulator, ROHS COMPLIANT visit Digikey Buy

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Part : 10112684-T03-09ULF Supplier : Amphenol Manufacturer : Avnet Stock : - Best Price : $0.6969 Price Each : $0.7559
Part : 10112690-T03-09ULF Supplier : Amphenol Manufacturer : Avnet Stock : - Best Price : $0.8359 Price Each : $0.9069
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Part : XUST03096 Supplier : ABB Manufacturer : Newark element14 Stock : - Best Price : $33.96 Price Each : $42.70
Part : 10112684-T03-09ULF Supplier : Amphenol Manufacturer : Heilind Electronics Stock : - Best Price : - Price Each : -
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Part : 10112690-T03-09ULF Supplier : Amphenol Manufacturer : Heilind Electronics Stock : - Best Price : - Price Each : -
Part : 10112684-T03-09ULF Supplier : Amphenol Manufacturer : Interstate Connecting Components Stock : - Best Price : - Price Each : -
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T0309

Catalog Datasheet MFG & Type PDF Document Tags

BY509

Abstract: BY 509 _" -_u_ N AMER PHILIPS/DISCRETE QbE D â  ^53=131 GOllGTS 4 "by ouy T-03-09 SILICON E.H.T. SOFT-RECOVERY RECTIFIER DIODE E.H.T. rectifier diode in a glass envelope intended for use in high-voltage , /DISCRETE DbE D bbS3131 GOllCHb h BY509 T-03-09 RATINGS Limiting values in accordance with the , e.h.t. soft-recovery rectifier diode 'F(AV) ImA) 50 7Z82239 100 150 Tamb(°C) BY509 T-03-09 Fig , RE Tà DbÃ~l> â  ^53131 OOIÏÏÏTÃTT BY 509 T-03-09 7Z82240 200 ' F (mA) 100 0 0 50 100
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OCR Scan
BY 509 diode BY509 z650 T0309 S3131 0Q11CH7

BAS32

Abstract: diode bas32 41E D 711002b 00533bt. 0 eSPHIN PHILIPS INTERNATIONAL BAS32 T-03-09 HIGH-SPEED SILICON DIODE , 00233bô M ^IPHIN BAS32 T-03-09 input signal output signal Fig. 2 Forward recovery voltage test , Manufacturer PHILIPS INTERNATIONAL BAS32 200 F ( AV) (mA) 100 41E D 711002b 00533LT fe ^PHIN T-03-09 - , versus ambient temperature. 711002b) 0023370 2 ^IPHIN BAS32 T-03-09 300 ImA) 200 100 7Z72420.1 s , Manufacturer PHILIPS INTERNATIONAL BAS32 (V) 1,5 0,5 l MIE D m 7HGô2b 0023371 M EBPHIN T-03-09
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OCR Scan
IEC134 diode bas32 BAS32 sod80 7Z91084
Abstract: SMBD 7000 SIEMENS/ SPCLi SEMICONDS T-03-09 C h a ra c te ris tic s at T = 25 °C, unless , T-03-09 Reverse current /R = f{T&) mW 400 300 * 200 St V 100 A Et 0 , SIEMENS/ SPCL-, SEMICONDS SMBà 7000 T-03-09 Forward voltage Vf = f{TA) 0 50 100 150 -
OCR Scan

BY509

Abstract: diode BY509 N AMER PHILIPS/DISCRETE QbE D mz_u_ 1,1=53^31 GQ11G1S 4 â  Bïoua T-03-09 SILICON E.H.T. SOFT-RECOVERY RECTIFIER DIODE E.H.T. rectifier diode in a glass envelope intended for use in high-voltage , DOllOTb b BY509 T-03-09 RATINGS Limiting values in accordance with the Absolute Maximum System (I EC , . soft-recovery rectifier diode 'F(AV) (mA) 50 7Z82239 100 150 Tamb , T-03-09 200 ImA) 100 7Z82240 H-4- -44-4- â  i- / V f- v \ , i
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OCR Scan
7Z72471 0011CH7

BY509

Abstract: diode BY509 _ U _ N AMER PHILIPS/DISCRETE QbE D ^53= 131 D 0H 01S 4 â  EJYDUa T-03-09 SILICON E.H.T. SOFT-RECOVERY RECTIFIER DIODE E.H.T. rectifier diode in a glass , 113 N AMER PHILIPS/DISCRETE ObE D bbS3131 DOllQTb b BY509 T-03-09 RATINGS Limiting , BY509 Silicon e.h.t. soft-recovery rectifier diode T-03-09 7Z82239 Fig. 3 Maximum permissible , bL53T31 OOllCHfl T BY 50 9 T-03-09 I 0 50 100 vF (V) 150 Fig. 6 -Tj = 25
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OCR Scan
L53T31

BAW62

Abstract: T0309 t-03-09 " ratings Limiting values in accordance with the Absolute Maximum System (IEC 134 , High-speed silicon diode IPHIN- 11 T-03-09 BAW62 PHILIPS INTERNATIONAL 5bE T> CHARACTERISTICS (continued , Eb 0D4D322 ÃEb BAW62 j| PHILIPS INTERNATIONAL 5bE p PHIN t-03-09 CHARACTERISTICS (continued) Recovery charge , I)_ PHILIPS INTERNATIONAL_5bE D 300 PHIN t-03-09 7Z72419.1 'F(AV) , silicon diode T-03-09 BAW62 _IS_ PHILIPS INTERNATIONAL 2 "f r (V) 1,5 5bE D 7Z 10526.1
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OCR Scan
1970 oscilloscope DO-35
Abstract: 23b320 OOlfc.S'm 1 H S I P SM B D 2835/36 SIEMENS/ SPCL-, SEMICONDS T-03-09 Characteristics at 7^ = 25 °C , SIEMENS/ SPCLi SEMICONDS SM B D 2835/36 T-03-09 Total pow er dissipation P10t = ^ ( 7a ) Reverse , / SPCLi SEM ICONDS I SM B D 2835/36 T-03-09 k h Forward voltage Vf = f(T^) 0 50 100 -
OCR Scan
Abstract: « S I P BAL 74 SIEMENS/ SPCLi SEMICONPS T-03-09 Electrical characteristics at 7X = 25 °C , S I P BAL 74 SIEMENS/ SPCL, SEMICONDS T-03-09 Total pow er dissipation P t0i = í(Ta) R e , 150 °C Siemens T-03-09 -
OCR Scan
Q62702-A614 Q62702-A718
Abstract: D m fl23b320 O D lbSO ? 2 « S I P B A S 28 SIEMENS/ SPCLi SEMICONDS T-03-09 , Siemens 32E D â  Ã›23b320 OOlbSOÃ" 4 m Z I P B A S 28 SIEMENS/ SPCLi SEMICONDS T-03-09 T , "23b320 Q ü lb S G S h « S IP SPCL-i SEMICONDS B A S 28 SIEMENS/ T-03-09 Forw ard v o lta -
OCR Scan
Q62702-A163 Q62702-A77

Q62702-A471

Abstract: -. MSIP 7 SEM ICON DS BAW56 - T-03-09 , - BAW56 T-03-09 Reverse current /n = A(7X) Total power dissipation Ptot â' f {Ta ) m W , - BAW56 T-03-09 Forward voltage Ve » f ( h ) 0 50 100 â'" 150 °C -rA
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OCR Scan
Q62702-A471 Q62702-A688

SIEMENS VF 100

Abstract: GS7070 on alumina 15 mm x 16.7 mm x 0.7 mm Siemens 51 32E D Ô23b320 001^477 ñ « S I P T-03-09 , 99 SIEMENS/ SPCLi SEMICÔNDS T-03-09 Total power dissipation P tBt ·f { T a) mW 400 Reverse , 001^47^ 1 H S I P T-03-09 BAL 99 SIEMENS/ SPCL, SEMICONDS F o rw a rd v o lta g e V f = f (Ta
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OCR Scan
SIEMENS VF 100 GS7070 BAL99 Q62702-A611 Q62702-A687
Abstract: 6100 SIEMENS/ SPCLi SEMICONDS T-03-09 C h a ra c te ris tic s at 7^ = 25 °C, unless otherwise , ) SMBD6100 T-03-09 Reverse current fn = f[TA) mW Forward current /F = f (Vfc) 7Á = 25°C Peak , S I P i SIEMENS/ SPCL-. SEMICONDS SMBD 6100 T-03-09 Forward voltage Vf = f{TA) 0 50 -
OCR Scan
23L32Q

Diode BAY 68

Abstract: diode bay 69 OClOWfe, 5 â  BAY 68 â'¢ BAY 69 T-03-09 Characteristics Min. Typ. Max. 7j = 25 °C, unlei Forward , 11-^-=0.01, fp = 0.3 ms 36 AEG CORP 17E D â  0D2TM2b ODOT747 4 â  BAY 68 â'¢ BAY 69 _ T-03-09 37
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OCR Scan
Diode BAY 68 diode bay 69 Diode BAY 45 diode I-35 L aeg diode bay 68 diode
Abstract: t SEMICONDS T-03-09 Characteristics at 7 = 25 °C, unless otherwise specified ^ DC , T-03-09 R everse current /r = f( T A ) Total p ow er d issip a tion Pxox^ f ( 7Ã") mW Forw , SEMICONDS SMBD 2837/38 T-03-09 Forward voltage Vr = f(7 a ) 0 SO 100 150 °C - -
OCR Scan
5S450

Diode BAY 54

Abstract: 68W35   fl^OCnb QODTTMb T â  AL6G BAY 68 â'¢ BAY 69 T-03-09 Characteristics Min. Typ. Max. 7j = 25 °C, unless , / / / 0 10 20 30 40 V 1?E D â  fl^SGOIb Q0GT74? C BAY 68 â'¢ BAY 69 _ T-03-09 100 PA 50 10 5 BAY
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OCR Scan
Diode BAY 54 68W35 Diode BAY 12 telefunken diodes 914 Scans-0014926 BAY69

aaf marking sot23-5

Abstract: - T-03-09 Maximum Ratings per Diode Symbol Value Unit 40 Parameter Reverse , Q lbSlE b H S I P BAS 40 SIEMENS/ SPCLi SEMICONDS T-03-09 Characteristics per Diode at 7X =
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OCR Scan
aaf marking sot23-5 62702-D

BAV99

Abstract: SIEMENS/ SPCLi SE MICÃ"NDS T-03-09 Electrical characteristics per diode at 7a = 25 °C, unless , I P BAV99 SIEMENS/ SPCL-. SEMICONDS T-03-09 T o t a l p o w er d is s ip a tio n P tot =
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OCR Scan
Q68000-A1185 Q68000-A549

bav 27 v

Abstract: BAV100   BAV100. BAV103 T-03-09 Min. Typ. Max. Characteristics = 25 °C, unless otherwise specified Forward , = 0.3 ms AEG CORP 17E I) 005T45b 0001737 1 â  BAV100. BAV103 _ T-03-09 1.6 V 1.2 0.8 0.4
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OCR Scan
bav 27 v S906 ir 0588 diode bav D0CH73 005T45

BAV45

Abstract: switched from lF = 10 mAto Ir = 10 mA; R|_= 100 ft; measured at lp = 1 mA i'iijijiliülu tfemuflflj T-03-09 , Philips Semiconductors. 5bE D â  711Qfl2b QOHQEÃb Tb5 «PHIN BAV45 jj PHILIPS INTERNATIONAL SbE D T-03-09
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OCR Scan

ir 0588

Abstract: LL4150 7 â  LL4150 T-03-09 Characteristics Min. Typ. Max. 7"j = 25 °C, unless otherwise specified
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OCR Scan
G02T42 11LIPMK
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