NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: (Ta=25°C) 26M1N 26M1N. k H a -H 0 id 9S0.B t-4 s , TOSHIBA {DISCRETE/OPTO} b? dËJiG^BSG 00Dc13flcì fi a 9097250 TOSHIBA (DISCRETE/OPTO) 67c 09339 Df'i(-i3 t 1 Silicon Diffused Type 1ZM27-1ZM390 1ZM27-1ZM390 Bi-Directional Zener Diode Toshiba Zener Diode , Current IZM (Note 1) mA TOSHIBA X-3F1A Junction Temperature Tj 150 °C Weight : 0.424g Storage , case and lead bending point. I TOSHIBA CORPORATION- - 224 - TOSHIBA {DISCRETE/OPTO} DET| TCHTESO ... | OCR Scan |
2 pages, |
1ZM47 zener 150 1ZM180 diode zener t4 1ZM27-1ZM390 1ZM330 1ZM390 Zener 224 1ZM100 bidirectional zener 1zm27 toshiba zener 26M1N 1ZM27-1ZM390 abstract |
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| Abstract: 3 T 4 82pF (external) Bobbin with ferrite core 0.5mm UEW L2 OSC 100MHz 100 (1)-(3) 2 1 T 4 24pF (external) Bobbin with ferrite core 0.5mm UEW T1 IFT 10.7MHz , TA7371AFG TA7371AFG TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA7371AFG TA7371AFG FM Front-End , oscillator and varactor diode for AFC. It simplifies the design of front end circuit. Features · Clamping diode for mixer output. · Varactor diode for AFC. · Local OSC. stop voltage: VCC = ... | Original |
8 pages, |
varactor diode for Colpitts oscillator TA7371AFG soshin 70mhz soshin bpf SFE 10.7 MA5 FM FRONT bpw B6A TA7371AFG abstract |
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| Abstract: T 4 82pF (external) Bobbin with ferrite core f0.5mm UEW L2 OSC 100MHz 100 (1)-(3) 2 1 T 4 24pF (external) Bobbin with ferrite core f0.5mm UEW T1 IFT 10.7MHz , TA7371AF TA7371AF TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA7371AF TA7371AF FM Front-End , oscillator and varactor diode for AFC. It simplifies the design of front end circuit. Features · Clamping diode for mixer output. · Varactor diode for AFC. · Local OSC. stop voltage: VCC = ... | Original |
8 pages, |
TA7371AF SFE 10.7 MA5 soshin bpf FM FRONT bpw B6A TA7371AF abstract |
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| Abstract: 1.2 n Marking A T 4 H 961001EAA2 961001EAA2 0 TOSHIBA is continually working to improve the quality and the , TOSHIBA 1SV216 1SV216 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 2 1 6 TV , JEDEC EIAJ TOSHIBA 1-1E1A Weight : 0.004g ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC , the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or ... | OCR Scan |
2 pages, |
toshiba Ta 1SV216 1SV216 abstract |
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| Abstract: 470MHz - 0.55 1.2 n Marking A T 4 H 961001EAA2 961001EAA2 # TOSHIBA is continually working to improve the quality , TOSHIBA 1SV216 1SV216 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 2 1 6 TV VHF , .0.15 do + 1 Ol ò u JEDEC EIAJ TOSHIBA 1-1E1A Weight : 0.004g ELECTRICAL CHARACTERISTICS (Ta , responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily ... | OCR Scan |
2 pages, |
1SV216 1SV216 abstract |
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| Abstract: Temperature T 1 s t * -4 0~8 5 °C JEDEC EIAJ TOSHIBA 15 - 4A1 Optical-Electrical Characteristics (T c = 2 , T c =- 1 0~6 O^C 1 Q 3 Q A 2 Maximum Ratings (Tc=25°C) 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE 3. PHOTODIODE ANODE TOSHIBA LASER DIODE TOLD9442M InGaAIP LD Units in , TOSHIBA SEMICONDUCTOR TECHNICAL DATA TENTATIVE Light Source for Bar Code Reader Lasing , T0LD9442M-1 T0LD9442M-1 1997-02-07 TOSHIBA CORPORATION ... | OCR Scan |
1 pages, |
laser diode toshiba TOLD9442M TOLD datasheet abstract |
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| Abstract: Series Resistance rs VR = 5V, f= 470MHz - 0.55 1.2 n Marking T 4 1 2001-05-31 TOSHIBA 1SV216 1SV216 Cy , TOSHIBA 1SV216 1SV216 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE TV VHF UHF TUNER , TOSHIBA 1-1E1A Weight : 0.004g CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse , 300 500 FREQUENCY f (MHz) 1000 NOTE : $C(%) = C (Ta) - C (25) C (25) X100 2 2001-05-31 TOSHIBA 1SV216 1SV216 RESTRICTIONS ON PRODUCT USE _000707E 000707E • TOSHIBA is continually working to improve the quality ... | OCR Scan |
3 pages, |
1SV216 1SV216 abstract |
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| Abstract: TOSHIBA 1SV277 1SV277 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 2 7 7 VCO , MHz Vr - 1 \T 4 V 2 V ^ 6 V , JEDEC EIAJ TOSHIBA 1-1E1A ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST , O n 961001EAA2 961001EAA2 0 TOSHIBA is continually working to improve the quality and the reliability of its , utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction ... | OCR Scan |
3 pages, |
900E 1SV277 1SV277 abstract |
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| Abstract: TOSHIBA 1SV277 1SV277 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 2 7 7 VCO , MHz Vr - 1 \T 4 V 2 V ^ 6 V , °C 0.15 +0.2 0.9-0.1 Ui JEDEC EIAJ TOSHIBA 1-1E1A ELECTRICAL CHARACTERISTICS (Ta = 25°C , rs Vr = 1V, f= 470MHz - 0.42 0.55 n MARKING 000707EAA2 000707EAA2 0 TOSHIBA is continually working to improve , the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of ... | OCR Scan |
2 pages, |
1SV277 1SV277 abstract |
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| Abstract: TOSHIBA TD62307P/F TD62307P/F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62307P TD62307P , parasitic diodes cannot be used as clamp diodes. 961001EBA2 961001EBA2 0 TOSHIBA is continually working to improve , the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA ... | OCR Scan |
7 pages, |
TD62307F dip package for 120mA 5V TD62307P TD62307P/F TD62307P/F abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| = 457200, 33020 T4= 609600, 33020 T5= 762000, 40640 = CUSTOM.PART 16= DIODES.PART 17= FETRELS.PART 18= FUSE.PART 19= IFCTI.PART 20= INDUCTOR.PART 21 = TIMEM.PART 40= TI_LIN.PART 41= TOSHIBA.PART 42= TRAN.PART 43= TYRISTOR.PART 44= ZILGMICR.PART 45 = CRYSTAL.PART,1 15= CUSTOM.PART,1 16= DIODES.PART,1 17= FETRELS.PART,1 18= FUSE.PART,1 19= IFCTI 41= TOSHIBA.PART,1 42= TRAN.PART,1 43= TYRISTOR.PART,1 44= ZILGMICR.PART,1 45= MIXMODE.PART,1 46 www.datasheetarchive.com/files/kaleidoscope/cad/visionics_edwinxp140/edwinxp/sys/edwin2k.iie |
Kaleidoscope | 14/06/2005 | 23.75 Kb | IIE | edwin2k.iie |
| = 457200, 33020 T4= 609600, 33020 T5= 762000, 40640 = CUSTOM.PART 16= DIODES.PART 17= FETRELS.PART 18= FUSE.PART 19= IFCTI.PART 20= INDUCTOR.PART 21 = TIMEM.PART 40= TI_LIN.PART 41= TOSHIBA.PART 42= TRAN.PART 43= TYRISTOR.PART 44= ZILGMICR.PART 45 = DIODES.PART,1 17= FETRELS.PART,1 18= FUSE.PART,1 19= IFCTI.PART,1 20= INDUCTOR.PART,1 21= INTELMEM 38= TIDSP.PART,1 39= TIMEM.PART,1 40= TI_LIN.PART,1 41= TOSHIBA.PART,1 42= TRAN.PART,1 43 www.datasheetarchive.com/files/kaleidoscope/cad/visionics_edwinxp140/edwinxp/sys/edwin2k.ian |
Kaleidoscope | 14/06/2005 | 23.51 Kb | IAN | edwin2k.ian |
| SCRs 257 6630 X00602MA X00602MA X00602MA X00602MA 03P2M 03P2M 03P2M 03P2M Replacement Nec SENSITIVE GATE SCR SENSITIVE GATE SCRs SCRs 257 6630 X00602MA X00602MA X00602MA X00602MA 03P4M 03P4M 03P4M 03P4M Replacement Nec SENSITIVE GATE SCR SENSITIVE GATE SCRs 5067 M24C01-RBN6 M24C01-RBN6 M24C01-RBN6 M24C01-RBN6 24AA01-I/P 24AA01-I/P 24AA01-I/P 24AA01-I/P Replacement Microchip 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K SERIAL I 2 C BUS EEPROM 5067 M24C01-RMN6 M24C01-RMN6 M24C01-RMN6 M24C01-RMN6 24AA01-I/SN 24AA01-I/SN 24AA01-I/SN 24AA01-I/SN Replacement Microchip 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K SERIAL I 2 C BUS EEPROM 5067 M24C01-RBN6 M24C01-RBN6 M24C01-RBN6 M24C01-RBN6 24AA01/P 24AA01/P 24AA01/P 24AA01/P Replacement Microchip 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K SERIAL I 2 C BUS EEPROM 5067 M24C01-RMN6 M24C01-RMN6 M24C01-RMN6 M24C01-RMN6 24AA01/SN 24AA01/SN 24AA01/SN 24AA01/SN Replacement Microch www.datasheetarchive.com/files/stmicroelectronics/stonline/db/xref-v3.txt |
STMicroelectronics | 20/10/2000 | 1842.28 Kb | TXT | xref-v3.txt |
| SCRs 257 6630 X00602MA X00602MA X00602MA X00602MA 03P2M 03P2M 03P2M 03P2M Replacement Nec SENSITIVE GATE SCR SENSITIVE GATE SCRs SCRs 257 6630 X00602MA X00602MA X00602MA X00602MA 03P4M 03P4M 03P4M 03P4M Replacement Nec SENSITIVE GATE SCR SENSITIVE GATE SCRs 5067 M24C01-RBN6 M24C01-RBN6 M24C01-RBN6 M24C01-RBN6 24AA01-I/P 24AA01-I/P 24AA01-I/P 24AA01-I/P Replacement Microchip 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K SERIAL I 2 C BUS EEPROM 5067 M24C01-RMN6 M24C01-RMN6 M24C01-RMN6 M24C01-RMN6 24AA01-I/SN 24AA01-I/SN 24AA01-I/SN 24AA01-I/SN Replacement Microchip 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K SERIAL I 2 C BUS EEPROM 5067 M24C01-RBN6 M24C01-RBN6 M24C01-RBN6 M24C01-RBN6 24AA01/P 24AA01/P 24AA01/P 24AA01/P Replacement Microchip 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K SERIAL I 2 C BUS EEPROM 5067 M24C01-RMN6 M24C01-RMN6 M24C01-RMN6 M24C01-RMN6 24AA01/SN 24AA01/SN 24AA01/SN 24AA01/SN Replacement Mi www.datasheetarchive.com/files/stmicroelectronics/stonline/db/xref-v1.txt |
STMicroelectronics | 20/10/2000 | 1859.39 Kb | TXT | xref-v1.txt |
| , Inc. Synaptics, Inc. SystemSoft Corporation Texas Instruments, Inc. Toshiba Transmeta Group Trident www.datasheetarchive.com/download/95370793-223476ZC/pc_99_1.zip (PC_99_1.PDF) |
Intel | 22/07/1998 | 1314.61 Kb | ZIP | pc_99_1.zip |