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Part Manufacturer Description Datasheet BUY
ISL99125BDRZ-T Intersil Corporation 25A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
ISL99135BDRZ-T Intersil Corporation 35A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
ISL58315CRTZ-T13 Intersil Corporation High Speed Triple Laser Diode Drivers; TQFN40; Temp Range: 0° to 70° visit Intersil Buy
ISL58315CRTZ Intersil Corporation High Speed Triple Laser Diode Drivers; TQFN40; Temp Range: 0° to 70° visit Intersil Buy
ISL58303DRTZ-T7A Intersil Corporation 800mA Triple Output Laser Diode Driver; TQFN24; Temp Range: 0° to 70° visit Intersil Buy
ISL58303DRTZ-T13 Intersil Corporation 800mA Triple Output Laser Diode Driver; TQFN24; Temp Range: 0° to 70° visit Intersil Buy

T.4 toshiba diode

Catalog Datasheet MFG & Type PDF Document Tags

2FK transistor

Abstract: DF3A8.2FU GND 4-Diode Device Product Overview As mobile devices add more functionality, the need to , , High-Speed and Super-High-Speed versions q Single-diode devices as well as 2-, 4- and 7-diode (common anode , 4-Diode DF5AxxF DF6A6.8FU DF5AxxCJE DF5AxxLJE US8 DF8AxxFK 3.6 V/8.2 V: ±15 kV , Standard Types Highe qDF3AxxF/FU/FE(2-Diode) r ESD qDF5AxxF/FU/JE(4-Diode) ction Capacitance qDF6A6.8FU(4-Diode) High-Speed Types qDF8AxxFK(7-Diode) qDF5AxxCFU/JE(4-Diode) Lowe
Toshiba
Original
Abstract: . Do not operate equipment which may generate high frequency surge energy near the laser diode. 4. Do , T O SH IB A TOLD9231M TOSHIBA LASER DAIODE InGaAlP TOLD9231M Unit in mm Lasing , '"10â'"60°C Pin Connection LD Ã" 6 ! PD 2 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE , V r (LD) V r (PD) Tc Tstg RATING 5 2 30 -1 0 -6 0 -4 0 -8 5 UNIT mW V V °C °c , '" 20 â'" UNIT mA mA V nm O O mA nA pF 961001EAC1 © TOSHIBA is continually working -
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PIN Photodiode side look

Abstract: TOLD9442M which may generate high frequency surge energy near the laser diode. 4. Do not apply excessive stress , diode packaging and not on the individual laser diodes. 1998 12-07 2/4 - T O SH IB A , T O SH IB A TOSHIBA LASER DAIODE InGaAlP TOLD9442M TOLD9442M Lasing Wavelength : Ap = 650 , LD Ô 6 ! PD 2 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE 3. PHOTODIODE , Capacitance SYMBOL Po V r (ld ) V r (PD) Tc Tstg RATING 5 2 30 -1 0 -6 0 -4 0 -8 5 UNIT mW V V °C °c
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PIN Photodiode side look TOLD9442M
Abstract: TOSHIBA TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62309P/F TD62309P , |11| |10| I 9 NC I6 I5 I4 -oC'' H 03 \ 2 < \ l i l |4| I 01 VCC I Is I , cannot be used as clamp diodes. 961001EBA2 # TOSHIBA is continually working to improve the quality , responsibility of the buyer, w hen utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in w hich a m alfunction or failure of a TOSHIBA product could cause loss of human life, bodily -
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TD62309F DIP-16 PFP-16 DIP16-P-300-2 HSOP16-P-300-1

soshin bpf

Abstract: FM FRONT bpw B6A > Vbf im GND AFC DIODE (C) AFC DIODE (A) -O VCC 1 2001-06-25 TOSHIBA TA7371AF EXPLANATION OF , No. TERMINAL NAME TERMINAL VOLTAGE TYP. (V) 1 RF INPUT 0.7 2 GND 0 3 AFC DIODE (CATHODE) â'" 4 , TOSHIBA TA7371AF TEST CIRCUIT 1 Voso Vstop TEST CIRCUIT VCC = 4V TEST CIRCUIT 2 Vcc=1-5V Vcc = 4V 4 2001-06-25 TOSHIBA TA7371AF INPUT/OUTPUT IMPEDANCE TEST CIRCUIT Input/output impedance and AFC diode , TOSHIBA TA7371AF TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA7371AF FM
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soshin bpf FM FRONT bpw B6A soshin 70mhz varactor diode fm sfe 10.7 FM front-end ic

LN 2003a

Abstract: ULN2003 driver led display (sat) h FE I !N (ON) >IN (OFF) 2 2 3 4 V mA 5 IOUT = 350mA Iq u T = 200mA Clamp Diode , - 1998 03-06 4/11 - TOSHIBA ULN2003/04AP/AFW TEST CIRCUIT 1- 'CEX OPE IM "' O P EN I , ) 40 3 INPUT VOLTAGE 4 V |N (V) 5 INPUT VOLTAGE 1998 03-06 7/11 - TOSHIBA ULN2003 , TOSHIBA TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT ULN2003/04AP/AFW SILICON MONOLITHIC , I4 I5 I6 L U L U L í J L á J L í J L á J L í J L jlJ I7 GND 961001EBA1 ©TOSHIBA is
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ULN2003AP ULN2003AFW ULN2004AP ULN2004AFW LN 2003a ULN2003 driver led display LN2003A 2003AP/AFW SOL-16D

TD62CB51P

Abstract: V W °C °C 1998 03-03 4/10 - TOSHIBA TD62C851,852P RECOMMENDED OPERATING CONDITIONS (Ta , 03-03 5/10 - TOSHIBA TD62C851,852P ELECTRICAL CHARACTERISTICS (Ta = -4 0 ~ 8 5 °C , FORWARD VOLTAGE (V) DIODE FORWARD VOLTAGE VF (V) 1998 03-03 9/10 - TOSHIBA TD62C851 , TOSHIBA TOSHIBA Bi-CMOS INTEGRATED CIRCUIT TD62C851,852P SILICON MONOLITHIC TD62C851P , ]PG 15 ] COM1 14 ] 04 1TM lo 13 E[ 2 LATCH [ 3 S-OUT [ 4 PC [ 5 COM2 [ 6 05 [ 7 OS
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TD62CB51P TD62C852P DIP20-P-300A DIP20-P-300-2

local osc ic ta7640ap

Abstract: am mixer ic ta7640ap A R 1C: -4 0 3 - TOSHIBA i ELECTRONIC OS D Ë J c] 0 ci 7 H 4 7 0017247 1 , ) () 4 () 5 () 6 0 MIX OUT () 8 (®) {K* AFC AFC DIODE DIODE (O) (A) SUB. OSO , ) (TVÄtc '- '· D IO ' -DIODE (A) BPP rti T O S H IB A ; -404- TOSHIBA-. ELECTRONIC 05 D , ): TA7371AP/TA7371AF TOSHIBA^ -4 0 8 - TOSHIBAn ELECTRONIC DE D Ë T | T0T7EM7 D017ESE S COIL , In TOSHIBA-. ELECTRONIC DS 1 90 9 7 2 4 7 TOSHIBA. ELECTRONIC d IT| c i[H7547 GD17ESS 0 J
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TA7371AP local osc ic ta7640ap am mixer ic ta7640ap toshiba 17255 TA7640AP 10.7ma5 TA7371AP/AF 60MAX 7371AP/AF
Abstract: T O SH IB A TOLD9441 M C TOSHIBA LASER DAIODE InGaAlP T O L D 9 4 4 1 MC Lasing , equipment which may generate high frequency surge energy near the laser diode. 4. Do not apply excessive , '"10~70°C Pin Connection 1. LASER DIODE ANODE Oj, u A uCi T ?ià TYITfcTVI? u nA .rT T J r\TjVr I j , 30 -1 0 -7 0 -4 0 -8 5 UNIT mW V V °C °c OPTICAL-ELECTRICAL CHARACTERISTICS (Tc = 25 , 961001EAC1 © TOSHIBA is continually working to improve the quality and the reliability of its products -
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500MH
Abstract: TOLD9441 MD T O SH IB A TOSHIBA LASER DAIODE InGaAlP T O L D 9 4 4 1 MD Lasing , equipment which may generate high frequency surge energy near the laser diode. 4. Do not apply excessive , '"10~70°C Pin Connection 1. LASER DIODE ANODE Oj, u A uCi T ?ià TYITfcTVI? u nA .rT T J r\TjVr I j , -1 0 -7 0 -4 0 -8 5 UNIT mW V V °C °c OPTICAL-ELECTRICAL CHARACTERISTICS (Tc = 25 , 961001EAC1 © TOSHIBA is continually working to improve the quality and the reliability of its products -
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ULN2803 SOL18-P-300-1.27

Abstract: toshiba uln2803 PCB (7 5 x 11 4 x 1.6mm Cu 20%) 1998 04-24 2/10 - TOSHIBA ULN2803/04AP/AFW RECOMMENDED , ) (Note) On Glass Epoxy PCB ( 7 5 x 1 1 4 x 1 .6mm Cu 20%) 1998 04-24 3/10 - TOSHIBA ULN2803 , =50V 1998 04-24 4/10 - TOSHIBA ULN2803/04AP/AFW TEST CIRCUIT 1ICEX OPEN 2- V c E ( s a t , TOSHIBA TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT ULN2803/04AP/AFW SILICON MONOLITHIC , GND 961001 EBA1 ©TOSHIBA is continually w o rking to im prove the qu ality and the re lia b ility
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ULN2803AP ULN2803AFW ULN2804AP ULN2804AFW ULN2803 SOL18-P-300-1.27 toshiba uln2803 ULN2803 led display driver SOL-18pin ULN2803AP/ ULN2803AP/AFW
Abstract: =15pF 1998 02-27 - 4/5 TOSHIBA TD 62476-479P OUTLINE DRAWING DIP8-P-300-2.54 Unit , TOSHIBA TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT TD 62476-479P SILICON MONOLITHIC , GND 01 GND 01 GND 961001EBA2 TOSHIBA is continually w orking to improve the q u a lity , the responsibility o f the buyer, w hen utilizing TOSHIBA products, to observe standards o f safety, and to avoid situations in w hich a m alfunction or failu re of a TOSHIBA product could cause loss o f -
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TD62476P TD62477P TD62478P TD62479P

TD62783

Abstract: TD62783AP 0.8 1.2 1.6 DIODE FORWARD VOLTAGE VF (V) TD62783AP - 5 1995-5-29 TOSHIBA CORPORATION INTEGRATED , INTEGRATED CIRCUIT TOSHIBA TECHNICAL DATA TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT , products. No responsibility Is assumed by TOSHIBA CORPORATION for any Infringements of Intellectual , Implication or otherwise under any Intellectual property or other rights of TOSHIBA CORPORATION or others. These TOSHIBA products are Intended for use In general commercial applications (office equipment
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TD62783F TD62783AF TD62784AP TD62784F TD62784AF TD62783 TA62783AP but 11 af transistor TD62783AP/F/AF

125H

Abstract: DIP-18 outputs, air contamination fault, or fault by improper grounding. 1998-05-15 4/6 TOSHIBA TD62783APA , TOSHIBA TD62783APA TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TnR7783APA , ) The input and output parasitic diodes cannot be used as clamp diodes. 961001EBA2 0 TOSHIBA is , to physical stress. It Is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations In which a malfunction or failure of a TOSHIBA
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DIP-18 125H R7783APA 50//S DIP18-P-300-2 14TYP

TOLD9231F

Abstract: TOLD9231 TOSHIBA TECHNICAL DATA lUSHlUA LASKK. UlUUt TOLD9231(F) InGaAIPLD Unito in : mm 1 Lasing , =-10-+50 eC PIN CONNECTION: 1 3 9 9 1 2 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE , xWindow glass LO chip JEDEG EIAJ TOSHIBA Optical-Electrical Characteristics (Tc=2S°0 CHARACTERISTIC , our products No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual , implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others
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TOLD9231F TOLD9231 TNR*G 670NM Laser-Diode laser diode toshiba
Abstract: T - 4T -°7 TOSHIBA FOR OPTICAL COMMUNICATIONS Laser Diode Modules for Optical , 172S2 O O l b i n T â TOSbT-41-07 TOLD320/322 Toshiba has developed the laser diode modules , subscriber loops and optical LAN. â'¢Light source for optical measurement instruments. â'¢L as er diode , incorporating Fabry-Perot laser diode. There are two types of package, the coaxial type and the Dual-in-Line , : (1), (4) (1). (4) mA - V mW PD reverse voltage Vrm Notes (1) The ambient temperature -
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T-41-07 16F-A AA27235 3908C 87-10-AC

toshiba gto

Abstract: grounding. 1998 05-15 4/6 - TOSHIBA OUTPUT CURRENT Iq u T ( mA) OUTPUT CURRENT l0 UT , TOSHIBA TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT TD62308APA SILICON MONOLITHIC TD62308APA , t parasitic diodes cannot be used as clamp diodes. 961001EBA2 # 0 # # TOSHIBA is , vulnerability to physical stress. It is the responsibility o f the buyer, w hen utilizing TOSHIBA products, to observe standards o f safety, and to avoid situations in w hich a m alfunction or failu re of a TOSHIBA
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toshiba gto

TD62307P

Abstract: dip package for 120mA 5V Off 'lN (OFF) 4 V|N= -35V â'" â'" -10 juA Clamp Diode Forward Voltage vF 5 lp = 120mA â'" 1.25 , outputs, air contamination fault, or fault by improper grounding. 1998-05-15 4/7 TOSHIBA TD62307P/F , TOSHIBA TD62307P/F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62307P , output parasitic diodes cannot be used as clamp diodes. 961001EBA2 0 TOSHIBA is continually working to , stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of
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TD62307F dip package for 120mA 5V TD62307 6-P-300-2 DIPI6-P-300-2 735TYP 75MAX 555TYP

TD62083AFN

Abstract: TD62084 7. Vp open jtt o- Vf _l open TD62083AFN - 4 1994-3-8 TOSHIBA CORPORATION INTEGRATED CIRCUIT , INTEGRATED CIRCUIT TOSHIBA TECHNICAL DATA TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT , responsibility Is assumed by TOSHIBA CORPORATION for any Infringements of Intellectual property or other rights , under any Intellectual property or other rights of TOSHIBA CORPORATION or others. These TOSHIBA products , these TOSHIBA products in equipment which requires extraordinarily high quality and/or reliability, and
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TD62084AFN SSOP18 TD62084 TD62083 SSOP18-P-225

TD62007F

Abstract: TD62007P 50 75 100 125 AMBIENT TEMPERATURE Ta (°C) 150 1998-05-15 4/6 TOSHIBA TD62007P/F OUTLINE DRAWING , TOSHIBA TD62007P/F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62007P , (Note) The input and output parasitic diodes cannot be used as clamp diodes. _961001EBA2 0 TOSHIBA is , to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA
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TD62007F
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