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Part Manufacturer Description Datasheet BUY
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments
UC3612J Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments
UC3612DP Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments

T.4 toshiba diode

Catalog Datasheet MFG & Type PDF Document Tags

2FK transistor

Abstract: DF3A8.2FU GND 4-Diode Device Product Overview As mobile devices add more functionality, the need to , , High-Speed and Super-High-Speed versions q Single-diode devices as well as 2-, 4- and 7-diode (common anode , 4-Diode DF5AxxF DF6A6.8FU DF5AxxCJE DF5AxxLJE US8 DF8AxxFK 3.6 V/8.2 V: ±15 kV , Standard Types Highe qDF3AxxF/FU/FE(2-Diode) r ESD qDF5AxxF/FU/JE(4-Diode) ction Capacitance qDF6A6.8FU(4-Diode) High-Speed Types qDF8AxxFK(7-Diode) qDF5AxxCFU/JE(4-Diode) Lowe
Toshiba
Original
Abstract: . Do not operate equipment which may generate high frequency surge energy near the laser diode. 4. Do , T O SH IB A TOLD9231M TOSHIBA LASER DAIODE InGaAlP TOLD9231M Unit in mm Lasing , '"10â'"60°C Pin Connection LD Ã" 6 ! PD 2 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE , V r (LD) V r (PD) Tc Tstg RATING 5 2 30 -1 0 -6 0 -4 0 -8 5 UNIT mW V V °C °c , '" 20 â'" UNIT mA mA V nm O O mA nA pF 961001EAC1 © TOSHIBA is continually working -
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PIN Photodiode side look

Abstract: TOLD9442M which may generate high frequency surge energy near the laser diode. 4. Do not apply excessive stress , diode packaging and not on the individual laser diodes. 1998 12-07 2/4 - T O SH IB A , T O SH IB A TOSHIBA LASER DAIODE InGaAlP TOLD9442M TOLD9442M Lasing Wavelength : Ap = 650 , LD Ô 6 ! PD 2 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE 3. PHOTODIODE , Capacitance SYMBOL Po V r (ld ) V r (PD) Tc Tstg RATING 5 2 30 -1 0 -6 0 -4 0 -8 5 UNIT mW V V °C °c
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PIN Photodiode side look TOLD9442M
Abstract: TOSHIBA TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62309P/F TD62309P , |11| |10| I 9 NC I6 I5 I4 -oC'' H 03 \ 2 < \ l i l |4| I 01 VCC I Is I , cannot be used as clamp diodes. 961001EBA2 # TOSHIBA is continually working to improve the quality , responsibility of the buyer, w hen utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in w hich a m alfunction or failure of a TOSHIBA product could cause loss of human life, bodily -
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TD62309F DIP-16 PFP-16 DIP16-P-300-2 HSOP16-P-300-1

soshin bpf

Abstract: FM FRONT bpw B6A > Vbf im GND AFC DIODE (C) AFC DIODE (A) -O VCC 1 2001-06-25 TOSHIBA TA7371AF EXPLANATION OF , No. TERMINAL NAME TERMINAL VOLTAGE TYP. (V) 1 RF INPUT 0.7 2 GND 0 3 AFC DIODE (CATHODE) â'" 4 , TOSHIBA TA7371AF TEST CIRCUIT 1 Voso Vstop TEST CIRCUIT VCC = 4V TEST CIRCUIT 2 Vcc=1-5V Vcc = 4V 4 2001-06-25 TOSHIBA TA7371AF INPUT/OUTPUT IMPEDANCE TEST CIRCUIT Input/output impedance and AFC diode , TOSHIBA TA7371AF TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA7371AF FM
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soshin bpf FM FRONT bpw B6A soshin 70mhz varactor diode fm sfe 10.7 FM front-end ic

LN 2003a

Abstract: ULN2003 driver led display (sat) h FE I !N (ON) >IN (OFF) 2 2 3 4 V mA 5 IOUT = 350mA Iq u T = 200mA Clamp Diode , - 1998 03-06 4/11 - TOSHIBA ULN2003/04AP/AFW TEST CIRCUIT 1- 'CEX OPE IM "' O P EN I , ) 40 3 INPUT VOLTAGE 4 V |N (V) 5 INPUT VOLTAGE 1998 03-06 7/11 - TOSHIBA ULN2003 , TOSHIBA TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT ULN2003/04AP/AFW SILICON MONOLITHIC , I4 I5 I6 L U L U L í J L á J L í J L á J L í J L jlJ I7 GND 961001EBA1 ©TOSHIBA is
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ULN2003AP ULN2003AFW ULN2004AP ULN2004AFW LN 2003a ULN2003 driver led display LN2003A 2003AP/AFW SOL-16D

TD62CB51P

Abstract: V W °C °C 1998 03-03 4/10 - TOSHIBA TD62C851,852P RECOMMENDED OPERATING CONDITIONS (Ta , 03-03 5/10 - TOSHIBA TD62C851,852P ELECTRICAL CHARACTERISTICS (Ta = -4 0 ~ 8 5 °C , FORWARD VOLTAGE (V) DIODE FORWARD VOLTAGE VF (V) 1998 03-03 9/10 - TOSHIBA TD62C851 , TOSHIBA TOSHIBA Bi-CMOS INTEGRATED CIRCUIT TD62C851,852P SILICON MONOLITHIC TD62C851P , ]PG 15 ] COM1 14 ] 04 1TM lo 13 E[ 2 LATCH [ 3 S-OUT [ 4 PC [ 5 COM2 [ 6 05 [ 7 OS
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TD62CB51P TD62C852P DIP20-P-300A DIP20-P-300-2

local osc ic ta7640ap

Abstract: am mixer ic ta7640ap A R 1C: -4 0 3 - TOSHIBA i ELECTRONIC OS D Ë J c] 0 ci 7 H 4 7 0017247 1 , ) () 4 () 5 () 6 0 MIX OUT () 8 (®) {K* AFC AFC DIODE DIODE (O) (A) SUB. OSO , ) (TVÄtc '- '· D IO ' -DIODE (A) BPP rti T O S H IB A ; -404- TOSHIBA-. ELECTRONIC 05 D , ): TA7371AP/TA7371AF TOSHIBA^ -4 0 8 - TOSHIBAn ELECTRONIC DE D Ë T | T0T7EM7 D017ESE S COIL , In TOSHIBA-. ELECTRONIC DS 1 90 9 7 2 4 7 TOSHIBA. ELECTRONIC d IT| c i[H7547 GD17ESS 0 J
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TA7371AP local osc ic ta7640ap am mixer ic ta7640ap toshiba 17255 TA7640AP 10.7ma5 TA7371AP/AF 60MAX 7371AP/AF
Abstract: T O SH IB A TOLD9441 M C TOSHIBA LASER DAIODE InGaAlP T O L D 9 4 4 1 MC Lasing , equipment which may generate high frequency surge energy near the laser diode. 4. Do not apply excessive , '"10~70°C Pin Connection 1. LASER DIODE ANODE Oj, u A uCi T ?ià TYITfcTVI? u nA .rT T J r\TjVr I j , 30 -1 0 -7 0 -4 0 -8 5 UNIT mW V V °C °c OPTICAL-ELECTRICAL CHARACTERISTICS (Tc = 25 , 961001EAC1 © TOSHIBA is continually working to improve the quality and the reliability of its products -
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500MH
Abstract: TOLD9441 MD T O SH IB A TOSHIBA LASER DAIODE InGaAlP T O L D 9 4 4 1 MD Lasing , equipment which may generate high frequency surge energy near the laser diode. 4. Do not apply excessive , '"10~70°C Pin Connection 1. LASER DIODE ANODE Oj, u A uCi T ?ià TYITfcTVI? u nA .rT T J r\TjVr I j , -1 0 -7 0 -4 0 -8 5 UNIT mW V V °C °c OPTICAL-ELECTRICAL CHARACTERISTICS (Tc = 25 , 961001EAC1 © TOSHIBA is continually working to improve the quality and the reliability of its products -
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ULN2803 SOL18-P-300-1.27

Abstract: toshiba uln2803 PCB (7 5 x 11 4 x 1.6mm Cu 20%) 1998 04-24 2/10 - TOSHIBA ULN2803/04AP/AFW RECOMMENDED , ) (Note) On Glass Epoxy PCB ( 7 5 x 1 1 4 x 1 .6mm Cu 20%) 1998 04-24 3/10 - TOSHIBA ULN2803 , =50V 1998 04-24 4/10 - TOSHIBA ULN2803/04AP/AFW TEST CIRCUIT 1ICEX OPEN 2- V c E ( s a t , TOSHIBA TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT ULN2803/04AP/AFW SILICON MONOLITHIC , GND 961001 EBA1 ©TOSHIBA is continually w o rking to im prove the qu ality and the re lia b ility
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ULN2803AP ULN2803AFW ULN2804AP ULN2804AFW ULN2803 SOL18-P-300-1.27 toshiba uln2803 ULN2803 led display driver SOL-18pin ULN2803AP/ ULN2803AP/AFW
Abstract: =15pF 1998 02-27 - 4/5 TOSHIBA TD 62476-479P OUTLINE DRAWING DIP8-P-300-2.54 Unit , TOSHIBA TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT TD 62476-479P SILICON MONOLITHIC , GND 01 GND 01 GND 961001EBA2 TOSHIBA is continually w orking to improve the q u a lity , the responsibility o f the buyer, w hen utilizing TOSHIBA products, to observe standards o f safety, and to avoid situations in w hich a m alfunction or failu re of a TOSHIBA product could cause loss o f -
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TD62476P TD62477P TD62478P TD62479P

TD62783

Abstract: TD62783AP 0.8 1.2 1.6 DIODE FORWARD VOLTAGE VF (V) TD62783AP - 5 1995-5-29 TOSHIBA CORPORATION INTEGRATED , INTEGRATED CIRCUIT TOSHIBA TECHNICAL DATA TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT , products. No responsibility Is assumed by TOSHIBA CORPORATION for any Infringements of Intellectual , Implication or otherwise under any Intellectual property or other rights of TOSHIBA CORPORATION or others. These TOSHIBA products are Intended for use In general commercial applications (office equipment
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TD62783F TD62783AF TD62784AP TD62784F TD62784AF TD62783 TA62783AP but 11 af transistor TD62783AP/F/AF

125H

Abstract: DIP-18 outputs, air contamination fault, or fault by improper grounding. 1998-05-15 4/6 TOSHIBA TD62783APA , TOSHIBA TD62783APA TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TnR7783APA , ) The input and output parasitic diodes cannot be used as clamp diodes. 961001EBA2 0 TOSHIBA is , to physical stress. It Is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations In which a malfunction or failure of a TOSHIBA
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DIP-18 125H R7783APA 50//S DIP18-P-300-2 14TYP

TOLD9231F

Abstract: TOLD9231 TOSHIBA TECHNICAL DATA lUSHlUA LASKK. UlUUt TOLD9231(F) InGaAIPLD Unito in : mm 1 Lasing , =-10-+50 eC PIN CONNECTION: 1 3 9 9 1 2 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE , xWindow glass LO chip JEDEG EIAJ TOSHIBA Optical-Electrical Characteristics (Tc=2S°0 CHARACTERISTIC , our products No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual , implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others
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TOLD9231F TOLD9231 TNR*G 670NM Laser-Diode laser diode toshiba
Abstract: T - 4T -°7 TOSHIBA FOR OPTICAL COMMUNICATIONS Laser Diode Modules for Optical , 172S2 O O l b i n T â TOSbT-41-07 TOLD320/322 Toshiba has developed the laser diode modules , subscriber loops and optical LAN. â'¢Light source for optical measurement instruments. â'¢L as er diode , incorporating Fabry-Perot laser diode. There are two types of package, the coaxial type and the Dual-in-Line , : (1), (4) (1). (4) mA - V mW PD reverse voltage Vrm Notes (1) The ambient temperature -
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T-41-07 16F-A AA27235 3908C 87-10-AC

toshiba gto

Abstract: grounding. 1998 05-15 4/6 - TOSHIBA OUTPUT CURRENT Iq u T ( mA) OUTPUT CURRENT l0 UT , TOSHIBA TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT TD62308APA SILICON MONOLITHIC TD62308APA , t parasitic diodes cannot be used as clamp diodes. 961001EBA2 # 0 # # TOSHIBA is , vulnerability to physical stress. It is the responsibility o f the buyer, w hen utilizing TOSHIBA products, to observe standards o f safety, and to avoid situations in w hich a m alfunction or failu re of a TOSHIBA
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toshiba gto

TD62307P

Abstract: dip package for 120mA 5V Off 'lN (OFF) 4 V|N= -35V â'" â'" -10 juA Clamp Diode Forward Voltage vF 5 lp = 120mA â'" 1.25 , outputs, air contamination fault, or fault by improper grounding. 1998-05-15 4/7 TOSHIBA TD62307P/F , TOSHIBA TD62307P/F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62307P , output parasitic diodes cannot be used as clamp diodes. 961001EBA2 0 TOSHIBA is continually working to , stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of
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TD62307F dip package for 120mA 5V TD62307 6-P-300-2 DIPI6-P-300-2 735TYP 75MAX 555TYP

TD62083AFN

Abstract: TD62084 7. Vp open jtt o- Vf _l open TD62083AFN - 4 1994-3-8 TOSHIBA CORPORATION INTEGRATED CIRCUIT , INTEGRATED CIRCUIT TOSHIBA TECHNICAL DATA TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT , responsibility Is assumed by TOSHIBA CORPORATION for any Infringements of Intellectual property or other rights , under any Intellectual property or other rights of TOSHIBA CORPORATION or others. These TOSHIBA products , these TOSHIBA products in equipment which requires extraordinarily high quality and/or reliability, and
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TD62084AFN SSOP18 TD62084 TD62083 SSOP18-P-225

TD62007F

Abstract: TD62007P 50 75 100 125 AMBIENT TEMPERATURE Ta (°C) 150 1998-05-15 4/6 TOSHIBA TD62007P/F OUTLINE DRAWING , TOSHIBA TD62007P/F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62007P , (Note) The input and output parasitic diodes cannot be used as clamp diodes. _961001EBA2 0 TOSHIBA is , to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA
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TD62007F
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