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T-79- Datasheet

Part Manufacturer Description PDF Type
T7900.0010 Littelfuse Miscellaneous, Undefined Category, ELECTRONIC POTENTIOMETER Original
T7900.0030 Littelfuse Miscellaneous, Undefined Category, ELECTRONIC POTENTIOMETER Original
T7901 Lucent Technologies IC SINGLE WIDE AREA CONNECTION Scan
T7903 Lucent Technologies IC MULTIPORT WIDE AREA CONNECTION Scan
T7904E Atmel Radiation Tolerant DSP Peripheral Controller Original
T7904E Atmel ICs for Aerospace RADIATION HARD, DUAL - USE Original
T7904E-0M Atmel A Radiation Tolerant DSP Peripheral Controller Original
T7904E-0M/883 Atmel A Radiation Tolerant DSP Peripheral Controller Original
T7904E-0MQ Atmel A Radiation Tolerant DSP Peripheral Controller Original
T7904E-0M-QK Atmel A Radiation Tolerant DSP Peripheral Controller Original
T7904E-0S/883 Atmel A Radiation Tolerant DSP Peripheral Controller Original
T7904E-0SB Atmel A Radiation Tolerant DSP Peripheral Controller Original
T7904E-0SC Atmel A Radiation Tolerant DSP Peripheral Controller Original
T7904E-0SV Atmel A Radiation Tolerant DSP Peripheral Controller Original
T7904EDD-E Atmel Radiation Tolerant DSP Peripheral Controller Original
T7904EDD-E Atmel Radiation Tolerant DSP Peripheral Controller Original
T7904EDDMQ Atmel Radiation Tolerant DSP Peripheral Controller Original
T7904EDDMQ Atmel Radiation Tolerant DSP Peripheral Controller Original
T7904EDDSV Atmel Radiation Tolerant DSP Peripheral Controller Original
T7904EDDSV Atmel Radiation Tolerant DSP Peripheral Controller Original
Showing first 20 results.

T-79-

Catalog Datasheet MFG & Type PDF Document Tags

U767D

Abstract: ARS 169 - 0.080 0.080 T29 T35 T41 T54 T67 T79 P29 P35 P41 P54 P67 P79 Q29 Q35 Q41 Q54 , T35 T41 T54 T67 T79 0.040 0.635 0.881 1.093 1.340 1.587 1.834 P29 P35 P41 P54 , 1.000 1.625 1.000 2.125 1.000 2.625 1.000 3.125 1.000 3.625 T29 T35 T41 T54 T67 T79 , 1.000 1.625 1.000 2.125 1.000 2.625 1.000 3.125 1.000 3.625 T29 T35 T41 T54 T67 T79 , 1.000 1.625 1.000 2.125 1.000 2.625 1.000 3.125 1.000 3.625 T29 T35 T41 T54 T67 T79
United Chemi-Con
Original
U767D ARS 169 T35 diode E7676R3VGS392MT29C mar 820 QMC 2284-ME8033-30 250VDC E767251VGS470MT29C E767251VGS680MT35C E767251VGS101MT41C E767251VGS151MT54C

namur

Abstract: CS12 >> >>T79 >>NT79M >>NT79M-=> >> - NAMUR >>T79 NAMUR >>NT79M-D2.5NH 22 -=> : 8.2V 2.5mm 2 2.2mA(1mA) 1000Hz -=> ABS IP67 1.5m T79 NAMUR -=> -=> P U G T M A 20-250V D 10-30V(:15-30V) DB 10-65V W 20-250V X E L Q B NAMUR J N V / F / X
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Original
namur CS12 CX16 1000H

U787D

Abstract: United Chemi-Con u787d - 0.080 0.080 VGS and VTX Dimensions in Inches Case Size Code T29 T35 T41 T54 T67 T79 , T41 T54 T67 T79 0.040 0.635 0.881 1.093 1.340 1.587 1.834 P29 P35 P41 P54 P67 , 1.000 1.625 1.000 2.125 1.000 2.625 1.000 3.125 1.000 3.625 T29 T35 T41 T54 T67 T79 , 1.000 1.625 1.000 2.125 1.000 2.625 1.000 3.125 1.000 3.625 T29 T35 T41 T54 T67 T79 , 1.000 1.625 1.000 2.125 1.000 2.625 1.000 3.125 1.000 3.625 T29 T35 T41 T54 T67 T79
United Chemi-Con
Original
U787D United Chemi-Con u787d 80VDC E787800VGS152MP79C E787800VGS391MQ29C E787800VGS681MQ35C E787800VGS821MQ41C

HP-5082-4204

Abstract: HP5082-4204 OGY CORP 5GE D â  SSlfl4bfl GG0302T Q â  T-79 -15 â'¬Lâ'¬CTRICnL CHflRflCTâ'¬fflSTICS ,   LT1022 T-79 -15 TYPICAL Pâ'¬RFORffiRnCâ'¬ CHRRRCTâ'¬RISTICS Gain vs Frequency Gain, Phase Shift , 0003031 T â  T-79 -15 â'" LT1022 - flp p u c flTio n s m F O R m A n o n The ,   SSlfimafl LT1022 0003-035 Q â  T-79 -15 t y p ic a l a p p l ic a t i o n PIN ,   SSlflMba QG03D33 2 â  â¡ "10 2 2 TVPICflL fìPPUCfìTIOnS T-79 -15 High Output Current Op Amp
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OCR Scan
HP5082-4204 HP-5082-4204 00G3Q27 LT1022A 0P-16A 0P-16E 1N4148
Abstract: : Model T79 T80 T81 T82 Input V +3.3V +5.0V +3.3V +5.0V Output HCMOS HCMOS SINEWAVE SINEWAVE Ordering Example: T79-T57-20.0MHz (Model-Stability-Freq) Pad Connections 1 2 3 4 5 6 , T79 Series TCXO 10 MHz to 50 MHz GREENRAY INDUSTRIES, INC. (Rev. A) P REC IS IO N Q UA R TZ TEC HNOL OG Y Very Rugged TCXO Tight Temp Stability SPECIFICATIONS Frequency Output Symmetry Output Level 10.0 MHz to 50.0 MHz HCMOS or Clipped Sinewave 50% ± 10% (HCMOS) SINE - +0.8V p-p typ Greenray Industries
Original
F/100 MIL-STD-202G

BL 130 301

Abstract: NEM0899F01-30 ) -45* 33 10.0 ' 331/ m o Package (A) 6.0 6.0 T-79 T-79 3 227 231 NES2527B-30 2.5 to 2.7
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OCR Scan
BL 130 301 NEM0899F01-30 NEM0899F01-301 NEM0995F01-301 NEL200101-24 NEL2004F02-24 NEL2012F03-24 NES1821B-30

gaas fet T79

Abstract: NES1821B-30 PRELIMINARY DATA SHEET 30 W L-BAND NES1821B-30 POWER GaAs MESFET OUTLINE DIMENSIONS (Units in mm) FEATURES · CLASS A OR AB OPERATION PACKAGE OUTLINE T-79 · HIGH OUTPUT POWER · HIGH GAIN 24±0.2 20.4±0.15 · HIGH POWER ADDED EFFICIENCY 1.0±0.1 GATE · PARTIALLY MATCHED SOURCE · HIGH RELIABILITY 4.7 17.4±0.2 8.0 DESCRIPTION R1.2±0.08 , 4 PLACES The , Pinch-off Voltage V IDSS VP RTH (CH-C) Output Power1 NES1821B-30 T-79 Thermal
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Original
gaas fet T79

D10A3260

Abstract: ABB gas flow meter /Size 1/8" 12 13 14 15 16 17 18 1) 2) 3) 4) 1 1 2 1 1 1 FP-1/8"-20-P-3/T79 FP-14"-15-P-3/T79 FP-1/4"-20-P-3/T79 FP-1/4"-41-G-3/T79 Abb./Fig. 4 Teileliste/Parts list 4
ABB Automation
Original
D10A3260 ABB gas flow meter 10A3260 10A3260N D124A004U01 60687 D184B003U07 D-37079

gaas fet T79

Abstract: ES182 PRELIMINARY DATA SHEET_ 30 W L-BAND POWER GaAs MESFET NE81K1M0 FEATURES_ · CLASS A OR AB OPERATION · HIGH OUTPUT POWER · HIGH GAIN · HIGH POWER ADDED EFFICIENCY · PARTIALLY MATCHED · HIGH RELIABILITY OUTLINE DIMENSIONS (Units n mm) P A C K A G E OUTLINE T-79 DESCRIPTION_ The N ES1821B-30 is a power G aA s FE T wh ich provides , -30 T-79 C H A R A C T E R IS T IC S Output Power' Linear Gain Drain Current2 Saturated Drain Current
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OCR Scan
ES182 NES1821

GL 7815

Abstract: gaas fet T79 ) PACKAGE OUTLINE T-79 -20.4±0.15 17.4+0.2 8.0±0.15 Tr? 15 · R1.2*0.08,4 PLACES DESCRIPTION , = 25` C) PART NUMBER PACKAGE OUTLINE SYMBOLS Functional Characteristics PidB NEZ3436-30E T-79
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OCR Scan
GL 7815

NES1821B-30

Abstract: gaas fet T79 30 W L-BAND NES1821B-30 POWER GaAs MESFET OUTLINE DIMENSIONS (Units in mm) FEATURES · CLASS A OR AB OPERATION PACKAGE OUTLINE T-79 · HIGH OUTPUT POWER · HIGH GAIN 24±0.2 20.4±0.15 · HIGH POWER ADDED EFFICIENCY 1.0±0.1 GATE · PARTIALLY MATCHED SOURCE · HIGH RELIABILITY 4.7±0.15 17.4±0.2 8.0±0.15 DESCRIPTION R1.2±0.08 , 4 PLACES The NES1821B-30 is a , V IDSS VP RTH (CH-C) Output Power1 NES1821B-30 T-79 Thermal Resistance °C/W
NEC
Original
d3125
Abstract: PRELIMINARY DATA SHEET S-BAND PARTIALLY MATCHED NES2527B-30 POWER GaAs MESFET FEATURES_ · HIGH OUTPUT POWER: 30 W · LOW DISTORTION: -45 dBc IM3 (@33 dBm SCL) (Verified by a Wafer Qual Test) · HIGH LINEAR GAIN: 13.0 dB · EFFICIENT LINEAR OPERATION: 6 A Idsq · WIDEBAND OPERATION: RF measurements at both 2.5 & 2.7 GHz PACKAGE OUTLINE T-79 OUTLINE DIMENSIONS (Units in mm) DESCRIPTION , NUMBER (T case = 40 °C) NES2527B-30 T-79 UNITS dBm dB % A dBc A V mS -4.0 MIN 44.0 11.5 TYP 45.0 -
OCR Scan
NES2527-30

NEM0899F01-30

Abstract: . 40 37 1.96 2.5, 2.7 3.6 10.0 10.0 (A) 7.4* 2 7.4 7.4 (A) 6.0 - Style T-79 T-86 T-79 T-79
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OCR Scan
NES1821P-50 NEZ3642-15D NEZ3642-15DL NEZ3642-8D NEZ3642-8DL NEZ3642-4D

gaas fet T79

Abstract: PRELIMINARY DATA SHEET S-BAND PARTIALLY MATCHED POWER GaAs MESFET FEATURES · HIGH OUTPUT POWER: 30 W · LOW DISTORTION: -45 dBc IMs (@33 dBm SCL) (Verified by a Wafer Qual Test) · HIGH LINEAR GAIN: 13.0 dB · EFFICIENT LINEAR OPERATION: 6 A Id s q · WIDEBAND OPERATION: RF measurements at both 2.5 & 2.7 GHz NES2527B-30 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE T-79 DESCRIPTION , -30 T-79 UNITS dBm dB % CHARACTERISTICS Power Out at 1 dB Gain Compression Linear Gain Power-Added
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OCR Scan
Abstract: PRELIMINARY DATA SHEET 30 W L-BAND NES1821B-30 POWER GaAs MESFET FEATURES_ · CLASS A OR AB OPERATION · HIGH OUTPUT POWER · HIGH GAIN · HIGH POWER ADDED EFFICIENCY · PARTIALLY MATCHED · HIGH RELIABILITY OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE T-79 DESCRIPTION_ T he N E S 18 2 1 B-30 is a po w e r G aA s FET w h ich pro vid es high o u tp u t po w e r and high , CHARACTERISTICS PART NUMBER PACKAGE OUTLINE SYMBOLS Pout (t c = 25 c) NES1821 B-30 T-79 UNITS dBm dB A A V -
OCR Scan

gaas fet T79

Abstract: PRELIMINARY DATA SHEET S-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES · HIGH OUTPUT POWER: 30 W · LOW DISTORTION: -45 dBc IMs (@33 dBm SCL) (Verified by a W afer Qual Test) · HIGH LINEAR GAIN: 10 OdB . EFFICIENT LINEAR OPERATION: 6 NEZ3436-30E OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE T-79 A Id s q · W IDEBAND OPERATION: RF measurements at both 3.4 & 3.6 GHz · , applications. ELECTRICAL PERFORMANCE (T c a s e = 4o c; ta = 25 c) NEZ3436-30E T-79 UNITS dBm dB %
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OCR Scan

ES1821

Abstract: M 0737 PRELIMINARY DATA SHEET 30 W L-BAND NES1821 B-30 POWER GaAs MESFET FEATURES_ · C L A S S A OR AB OPERATION · HIGH OUTPUT POW ER · HIGH GAIN · HIGH POW ER ADDED EFFICIENCY · PARTIALLY M ATCHED · HIGH RELIABILITY OUTLINE DIMENSIONS (Units in mm) P A C K A G E OUTLIN E T-79 DESCRIPTION_ The N E S 1821B-30 is a power G a A s F E T which provides high output power , A G E OUTLINE SYM BO LS P out (Tc = 25°q N ES1 821 B-30 T-79 UNITS dBm dB A A V °C/W -4.0 MIN
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OCR Scan
ES1821 M 0737

NES2527-30

Abstract: NES2527B-30 S-BAND PARTIALLY MATCHED NES2527B-30 POWER GaAs MESFET FEATURES · HIGH OUTPUT POWER: 30 W · LOW DISTORTION: -45 dBc IM3 at 33 dBm SCL (Verified by a Wafer Qual Test) · HIGH LINEAR GAIN: 13.0 dB · EFFICIENT LINEAR OPERATION: 6 A IDSQ · WIDEBAND OPERATION: RF measurements at both 2.5 & 2.7 GHz 4.7±0.15 17.4±0.2 8.0±0.15 R1.2±0.08 , 4 PLACES OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE T-79 24±0.2 20.4±0.15 , PACKAGE OUTLINE SYMBOLS CHARACTERISTICS = 40 °C) NES2527B-30 T-79 UNITS dBm dB % A dBc A V mS -4.0 MIN
California Eastern Laboratories
Original
J265

S2527-30

Abstract: T79 marking Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. T-79 24±0.2 20.4±0.15 1.0±0.1 GATE SOURCE 4.7±0.15 17.4±0.2 8.0±0.15 R1.2±0.08 , 4 PLACES DRAIN 0.1 2.41±0.15 13.4±0.2 4.5 MAX 1.78±0.15 PART NUMBER MARKING NES1821B-30 S1821-30 NES2527B-30 S2527-30 EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES · Headquarters · 4590 Patrick
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Original
T79 marking marking T79 R1208 NES2527B30

HTSSOP-8

Abstract: MICROWAVE DEVICES -78] ·················································································································· 17 T-79 [T-79 , . SOURCE Package Dimensions (15/16) (Unit : mm) T-78 T-79 8.25±0.15 24±0.3 20.4 Gate
NEC
Original
HTSSOP-8 MICROWAVE DEVICES 16TSSOP
Abstract: - 0.080 0.080 T29 T35 T41 T54 T67 T79 P29 P35 P41 P54 P67 P79 Q29 Q35 Q41 Q54 , T35 T41 T54 T67 T79 0.040 0.635 0.881 1.093 1.340 1.587 1.834 P29 P35 P41 P54 , 1.000 1.625 1.000 2.125 1.000 2.625 1.000 3.125 1.000 3.625 T29 T35 T41 T54 T67 T79 , 1.000 1.625 1.000 2.125 1.000 2.625 1.000 3.125 1.000 3.625 T29 T35 T41 T54 T67 T79 , 1.000 1.625 1.000 2.125 1.000 2.625 1.000 3.125 1.000 3.625 T29 T35 T41 T54 T67 T79 -
OCR Scan
200MH 80-200MH R4700 IDT79 208-P IDT79R4700

MAB100

Abstract: RC306 - 0.080 0.080 VGS and VTX Dimensions in Inches Case Size Code T29 T35 T41 T54 T67 T79 , T41 T54 T67 T79 0.040 0.635 0.881 1.093 1.340 1.587 1.834 P29 P35 P41 P54 P67 , 1.000 1.625 1.000 2.125 1.000 2.625 1.000 3.125 1.000 3.625 T29 T35 T41 T54 T67 T79 , 1.000 1.625 1.000 2.125 1.000 2.625 1.000 3.125 1.000 3.625 T29 T35 T41 T54 T67 T79 , 1.000 1.625 1.000 2.125 1.000 2.625 1.000 3.125 1.000 3.625 T29 T35 T41 T54 T67 T79
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OCR Scan
MAB100 RC306 DT-408 MAA550 IDT79RC46401 100MH 150MH 180MH 2400MB/ 67MFI
Abstract: >> >>T79 >>NT79M >>NT79M-=> >> - NAMUR >>T79 NAMUR >>NT79M-D2.5NH 22 -=> : 8.2V 2.5mm 2 2.2mA(1mA) 1000Hz -=> ABS IP67 1.5m T79 NAMUR -=> -=> P U G T M A 20-250V D 10-30V(:15-30V) DB 10-65V W 20-250V X E L Q B NAMUR J N V / F / X -
OCR Scan
RC64145 RC5000 512MB IDT79RCXX IDT79RC64 IDT79RC64V145
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