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T-33-29 Datasheet

Part Manufacturer Description PDF Type
T3329501 Amphenol Circular Connectors, Connectors, Interconnects, CONN PLUG 4POS CABLE PIN Original
T3329502 Amphenol Circular Connectors, Connectors, Interconnects, CONN PLUG 4POS CABLE PIN Original
T3329551 Amphenol Circular Connectors - Housings, Connectors, Interconnects, CONN PLUG 4POS CABLE PIN CRIMP Original
T3329552 Amphenol Circular Connectors - Housings, Connectors, Interconnects, CONN PLUG 4POS CABLE PIN CRIMP Original

T-33-29

Catalog Datasheet MFG & Type PDF Document Tags

PHILIPS BDX65

Abstract: transistors ai 757 /DISCRETE BDX65; 65A BDX65B; 65C 1/X.àV.ÃV Jl 2SE D bbS3T31 0011170 3 T-33-29 R1 typ. 5 kfì R2 , Turn-off time T-33-29 VF typ. 1,2 V ton typ. t0ff typ. 1 /us 6 us 90% â B 10% 90% Fig. 3 , ; 65C I j ai A T-33-29 5mH vert, oscilloscope 0,1 il â'"I T.U.T. vcc7F hor. oscilloscope Fig , BDX65B; 65C J I T-33-29 " 'cMn lav 5 =o,c A )1 , DJJ 13 Jl T-33-29 7Z67930.1 Fig. 9 Safe Operating ARea at Tmb < 25 °C. I Region of permissible
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BDX64 BDX64A BDX64B BDX64C PHILIPS BDX65 transistors ai 757 PHILIPS BDX64 BDX64* darlington 1981-R BDX65C T-33-2 S3T31

BDX67

Abstract: transistor bdx67 Dômifi 1 BDX67; 67A 11 BDX67B; 67C II J V_ T-33-29 c RI typ. 3 ki2 R2 typ. 80 fi Fig. 2 Circuit , lF = 10 A IJi UUJil I BC |bc T-33-29 â'¢cbo < 1 mA 'cbo < 5 mA 'ceo < 1 mA >ebo < 5 mA hfe , ; turn-on time turn-off time T-33-29 lon typ. 1 us t0ff tYP- 3,5 ¡is 7Z77499.S 90% >B 10%- 90 , ) ESE D â  b 1353131 0Q5Q0Q1 3 â  BDX67; 67A BDX67B; 67C 313JI I Jl T-33-29 TIM 0â'"I ru 5mH , Q02DQQ2 5 T-33-29 ioa (A) 1Q to -1 10 -2 CMmax Cmax 6 = :d) à io 0,01 N ii 5 i 0,5
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BDX66 BDX66A BDX66B BDX66C transistor bdx67 BDX66B BDX66A BDX66 BDX66B TRANSISTOR transistor sb 772 darlington power transistor 10a T-33-H 7Z82929

b0335

Abstract: B0337 0D45aft7 171 MPHIN T-33-29 < j_ R1 R2 izwlü! Ri typ. 4 ki2 R2 typ. 100 fi _I Fig. 2 Circuit , otherwise specified SLE D BD331; 333 BD335; 337 ?iioaEL oo4Eflaa OOA mphin T-33-29 IE = VCB = vCBOmax , Manufacturer BD331; 333 T-33-29 BD335; 337 PHILIPS INTERNATIONAL SbE T> â  711D0Sb OOMBaaq TM4 7277489 5 T-33-29 , transistors J V. BD331; 333 BD335; 337 PHILIPS INTERNATIONAL SbE D m 711005b OQi+SÃTG 7bb T-33-29 , SbE D 10' My 10 T-33-29 711002b ÃGMSÃTl bT5 HIPHIN ?z72225 - â'" - S B voltage
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BD332 BD334 BD336 b0335 B0337 b0333 OF IC 337 transistor 337 b0332 BD338 7Z67329 7Z82902

WF VQE 13

Abstract: BDX63B ; 63A BDX63B; 63C S5E D bbss^i aamsa a T-33-29 r" i_ R1 R2 O- _i R1 typ. 8 kil R2 typ , power transistors S5E D â  ^53=131 Gomsi T â  BDX63; 63A BDX63B; 63C - T-33-29 characteristics , times (between 10% and 90% levels) 'Con = 3 'Bon = "Wf = 12 mA turn-on time turn-off time T-33-29 ton , OOniLl fi â  BDX63; 63A BDX63B;63C 3 il I Diode, forward voltage lp = 3 A T-33-29 VF typ. 1,2 V IM , ;63C T-33-29 A 7Z67327.1 'CMn tax 5 = 0,01
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BDX62 BDX62A BDX62B BDX62C WF VQE 13 wf vqe 14 e WF VQE 11 E WF vqe 13 D Wf vqe 14 7Z697001 BDX63R-

BU724A

Abstract: fafaS3*131 QDlflbSD a 2SE D N AMER PHIL IPS/ DISC RE TE BU724 BU724A T-33-29 RATINGS , BU724A Silicon diffused power transistors T-33-29 CHARACTERISTICS Tj = 25 °C unless otherwise , / DISC RE TE 2SE D bb53*m BU724 BU724A QQlflbSS T-33-29 (1) For adjustment o f lg = 1 , BU724 BU724A T-33-29 3 Q IZ Ul 5 a. O -I UJ 6 a I Region o f permissible DC , T-33-29 r N AMER PH ILI PS/ DI SC R ETE ESE D bbS3T31 Q01fifeiS5 7 â  BU724 BU724A
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7Z81936

TIP641

Abstract: TIP642 Rated Collector Current MinhFEof 1000 at 4 V, 5 A 100 mJ Reverse Energy Rating TO-3 PACKAGE T-33-29 , Notes 5 and 6 3.5 3.5 3.5 v 62c 36971 d T-33-29 NOTES: 5. These parameters iriust be measured using , , TIP641, TIP642 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION T-33-29 , (OPTO) 62c 36973 TIP640, TIP641, TIP642 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS T-33-29 , TRANSISTORS D TYPICAL CHARACTERISTICS T-33-29 STATIC FORWARD CURRENT TRANSFER RATIO vs COLLECTOR CURRENT
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TIP645 TIP646 TIP647 tlp641 lN914 TIP64

BD865

Abstract: BD861 correction stages. T-33-29 BD 861 BD 863 -BD 865 Type Ordering code BD 861 BD 863 BD 865 Q62702-D956 , to case "thJC 8.3 8.3 8.3 K/W 1836 E-ll 459 2SC D â  Ã´EBSbOS 0004414 b WSIE6 , T-33-29 - 25C , = 3 V) fbfe 60 60 60 kHz 460 1 8 3 7 Eâ'"12 2SC T> m fi23SbOS 0004415 a «SIEfi : T-33-29 , : -"C 0*416 D bd861 T-33-29 BD 863 SIEMENS AKTIENGESELLSCHAF-BD865 Permissible pulse load fe ='
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Q62702-D958 Q62702-D960 BD865 BD861 ms 102y QQG441

PHILIPS BDX65

Abstract: BDX65 PHILIPS/DISCRETE BDX65; 65A BDX65B; 65C bbSBTil O O m T f l 3 H5E D T-33-29 R1 typ. 5 k fi , BDX65; 65A BDX65B; 65C 5SE D bbS B 'm o a m a o T-33-29 CHARACTERISTICS (continued) Diode , transistors T-33-29 CHARACTERISTICS (continued) MM t" p! Fig. 5 Test circuit fo r turn-off , BDX65B; 65C I-1 t bfej53T3i o o m a a 5 â  SSE D T-33-29 I Mill! _ 1 1 I , Darlington power transistors 1 0 -1 D T-33-29 tp(ms) â'ž 102 Fig. 12 S.B. voltage
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53T31 5B131

TIPL775

Abstract: TIPL775A 1984 T-33-29 . 7 device schematic Specifically Designed For Low-Loss, High-Current, High-Speed , , TIPL775A N-P-N MONOLITHIC DARLINGTON-CONNECTED SILICON POWER TRANSISTORS 62C 37100 ^ T-33-29~ . , switching characteristics T-33-29 PARAMETER TEST CONDITIONS TIPL775 TIPL775A UNIT MIN TYP MAX MIN .-TYP , DARLINGTON-CONNECTED SILICON POWER TRANSISTORS 62 C 37102 ^ T-33-29 ä I 0.4 0.1 TYPICAL CHARACTERISTICS , TC = 25°C 1 1 T-33-29 STATIC FORWARD CURRENT TRANSFER RATIO vs COLLECTOR CURRENT 10 k
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transistor 31104 2j50 TIPL77S 2J5012 D037100 00371D3 DDB71DM

bd645 transistor

Abstract: transistor BD6 BD643; BD645; BD647; BD649; BD651 PHILIPS INTERNATIONAL 5bE D 711Dfl2b ODMS'IS? bflB M P H I N T-33-29 , CB0 max; Tj = 150 °C 5bE D BD643; BD645; BD647; BD649; BD651_ 711002b 0042*120 514 IPHIN T-33-29 , time 5bE D 711Dfl2b O O M S ^ typ . max. ty p . max. 4SD BIPHIN T-33-29 1.0 2.0 5.0 10 ms , TllQBEb QDMS^ai OQT BIPHIN T-33-29 iA ) 'CMmax 5 -0 .0 1 10 'C m a x . I id 100 ms N L , . 218 July 1988 Silicon Darlington power transistors T-33-29 SbE D - Il . I BD643
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bd645 transistor transistor BD6 H 649 A transistor BD644 BD646 BD648 BD650 BD652 MSA060

TIP621

Abstract: TIP620 Designed For Complementary use with TIP625, TIP626, TIP627 T-33-29 I - . 65 W at 25°C Case Temperature , body. ! thermal characteristics 62c 36959 ' T-33-29 PARAMETER MIN TYP MAX UNIT RgjC 2.69 "CIW , INPUT MONITOR T-33-29 OUTPUT MONITOR 44" 1N914 1N914 1N914 -)l- 270 pF , SILICON POWER TRANSISTORS T-33-29 PARAMETER MEASUREMENT INFORMATION O CP < Ã" CD Cfl TEST CIRCUIT , DARLINGTON-CONNECTED SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS T T-33-29 STATIC FORWARD CURRENT TRANSFER
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TIP620 TIP621 TIP622 2N6127 A50FI 7S265

transistor k 975

Abstract: c 879 transistor 2SC » â  023SbOS 0QQH4S1 3 â  SIE6-' T-33-29 NPN Silicon Planar Darlington Transistors BD , '"05 467 2SC D â  Ã"S3SbDS Q0Q4422 5 I 25C 04422 SIEMENS AKTIENGESELLSCHAF - ISIEû D T-33-29 BD , Q00442S 0 «SIE6 r 1 T-33-29 NPN Silicon Darlington Transistors BD 975 BD 977 SIEMENS AKTIENGESELLSCHAF , _ BD 975 T-33-29 BD 977 SIEMENS AKTIENGESELLSCHAF -BD 979 Static characteristics (Tamb = 25 °C) BD , | MHz Fâ'"10 asc » â  Ã´23Sb05 0DQMMB7 M MSIE6 . 25C 04427 D T-33-29 SIEMENS AKTIEN6ESELLSCHAF
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BD977 transistor k 975 c 879 transistor afe 1000 BD880 BD876 darlington bd 876 Q62702-D902 Q62702-D903 Q62702-D904 Q62902-B63 Q62902-B62 00D442

TIPL773

Abstract: B 773 transistor lê 1 W 7 2 b C D 37D 78 D f ~ 8961726 TEXAS IN S T R (O P T O ) 62C 37078 T-33-29 , 0.1 MHz 185 PF See Notes 3 and 4 2 2.2 2 .5 2.5 3 3.5 4 4 2 V T-33-29 TIPL773A TYP MAX UNIT V V MA , ) 62C 37080 T-33-29 TIPL773B N-P-N SILICON TRIPLE TRANSISTOR ADVANCED POWER DARLINGTON electrical , -COPTO} t.5 DE | flìtilTEL 00370A1 0 ^ T-33-29 8961726 TEXAS IN S T R (O P T O , 1 |~ 8961726 TEXAS IN S T R COPTO) 62C 3 7 0 8 2 * Z "' T-33-29 _D_ TIPL773
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B 773 transistor

FE10E

Abstract: 8d679 D â  711062b 0042^3 bll BIPHIN T-33-29 r' R1 -1â'"c f r à k 1 Ri typ. 3 kii ' R2 typ , Collector cut-off current â  711Gê2b 0042TbM SSS â  PHIN for BD675 read lc = 2 A. T-33-29 IE =°; VCB , INTERNATIONAL CHARACTERISTICS (continued) 5bE D MM 0â'"1 ru T-33-29 711Dfl2b QQMSTbS MTl MPHI^ Vim- 12 V , BD679; 681 683 J PHILIPS INTERNATIONAL 4 T-33-29 ShE » â  711Q05tj DDMSTb? 2b4 -th J-mb (K/W) 3 , transistors Jl PHILIPS INTERNATIONAL io2 T-33-29 BD675; 677 _ J^ BD679; 681; 683 5bE D â  711Gfl2b
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BD676 BD678 BD680 BD682 BD684 FE10E 8d679 7Z82906

BD646F

Abstract: BD649F . TLc IPHIN T-33-29 L. R1 R2 R1 typ. 4kfi R2 typ. 100kfi _I Fig. 2 Darlington circuit diagram , T-33-29 ~~~ 0.1 mA max. 1 mA max. 0.2 mA max. 5 mA BD643F 645F 647F 649 F 651F , INTERNATIONAL v|m-0 SbE D [L-c! 711005b â¡Q4HC13C) 3TT »PHIN T-33-29 V|M = 12V RB = 270 fi L =5 mH 'CC = , This Material Copyrighted By Its Respective Manufacturer Silicon Darlington power transistors T-33-29 , SbE D â  711Gfi5b â¡â¡42141 T5à «PHIN 7Z8101B ! T-33-29 100 â'ž â'žâ'ž 150 tmb l°c> Fig. 7
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BD649F BD646F BD648F BD650F BD652F 651F 65-1F BD644F

BU724A

Abstract: BU724 BU724A 2se d bbSH^i QGiatso a T-33-29 ratings Limiting values in accordance with the Absolute , mA;Tmb=100°C vBEsat 'cp JL T-33-29 VCE=VCESM max.'VBE = 0.3 V 'CES max. 0.1 mA VCE = VcES max , BU724 BU724A ESE D bb53^31 OQlflbSS 1 T-33-29 + 8V JUL BIO Si BC107 r&r , 5SE D â  bb53131 0Q10b53 3 BU 724 BU724A T-33-29 § Q I-Z lu S a. O -i uj S a VCE IV) I , 724 BU724A 10" 102 2SE D â  bbS3131 OOiatSM S I T-33-29 10 1 1 /Al 10 Fig. 6 Typical DC
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OA28 OA-28 Characteristic curve BC107 S3131

TIP662

Abstract: P6019 device schematic 80Wat 100° C Case Temperature T-33-29 10 A Rated Continuous Collector Current MAX , , TIP661, TIP662 T-33-29 N-P-N DARLINGTON-CONNECTED . SILICON POWER TRANSISTORS electrical , POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION -M- 1N914 Hâ'"Nâ'"K- INPUT MONITOR T-33-29 , 62c 36985 T-33-29 7 FUNCTIONAL TEST INFORMATION j-^^ VCE MONITOR INPUT BOO (oj-VW lC , TRANSISTORS FUNCTIONAL TEST INFORMATION T-33-29 24 V Set damp for I CM - 7 m A TEST CIRCUIT INPUT
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TIP660 P6019 tektronix p6019 524I transistor tip662 0PT03-

Transistor 337

Abstract: BD335 INTERNATIONAL n L. SbE D i 7110flEb 0042887 171 MPHIN T-33-29 H-. < R1 R2 R-| typ. 4kà R2 typ. 100 Sl , SbE 1> 90% 10% 90% 10% I 711062b QQMBaaq m iphin 7277499 5 T-33-29 un u 'Bon Boff 'Con - , ; 333 BD335; 337 PHILIPS INTERNATIONAL sbE D â  7iiofl2b ocmsaTG ?bb T-33-29 IPHIN , ) Second-breakdown limits. July 1988 177 BD331; 333 BD335; 337 PHILIPS INTERNATIONAL 5bE P 10' My 10 T-33-29 , Silicon Darlington power transistors T-33-29 PHILIPS INTERNATIONAL 10 , BD331; 333 J ^_ BD335; 337
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IEC134 IM 337 BD337 c 337 25 12 v transistors 337 BD335 TRANSISTOR T3329

bux diode

Abstract: BUX28 2SC D â  fl235bOS 0004fiSM 1 «SIEG , NPN Silicon Darlington Power Transistor - SIEMENS AKTIEN6ESELLSCHAF T-33-29 BUX28 BUX 28 is a triple diffused monolithic NPN dariington power transistor in TO 3 case (3 A 2 DIN 41872). The collector is electrically connected to the case. The resistor between base ,   623SbOS QQQ4Ã"55 3 MSIEG SIEMENS AKTIENGESELLSCHAF . T-33-29 _ BUX28 Static characteristics (Tcase = 25 , AKTIENGESELLSCHAF T-33-29 BUX28 Pulse load (Voltage multiplicator) Mv =f(t) 902 2218 E-01 Pulse load
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Q62702-U258 Q62901-B11-A Q62901-B50 bux diode 22-16 diode siemens power transistor

2N6034

Abstract: 2n60 ELECTRICAL CHARACTERISTICS (Toase = 25°C unless otherwise specified) T-33-29 Symbol Parameter Test , VÅ" (V) T-33-29 I 4 I I 4 I t lC , ) V &-M50 . I I I I I . T-33-29 Iq=3A S G S-THÃ"MSON 3QE D â'"- rST SCS-TOOMSON *7# I
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2N6037 2N6038 2N6039 2N6034 2N6035 2N6036 2n60 2N6039 SGS 2N6034/35/36 2N6037/38/39

T 3379 552

Abstract: lê 1 W 7 2 b C D 37D 78 D f ~ 8961726 TEXAS IN S T R (O P T O ) 62C 37078 T-33-29 , 0.1 MHz 185 PF See Notes 3 and 4 2 2.2 2 .5 2.5 3 3.5 4 4 2 V T-33-29 TIPL773A TYP MAX UNIT V V MA , ) 62C 37080 T-33-29 TIPL773B N-P-N SILICON TRIPLE TRANSISTOR ADVANCED POWER DARLINGTON electrical , -COPTO} t.5 DE | flìtilTEL 00370A1 0 ^ T-33-29 8961726 TEXAS IN S T R (O P T O , 1 |~ 8961726 TEXAS IN S T R COPTO) 62C 3 7 0 8 2 * Z "' T-33-29 _D_ TIPL773
Amphenol
Original
T 3379 552

Amphenol Assembly instructions

Abstract: 3524 application 1984 T-33-29 . 7 device schematic Specifically Designed For Low-Loss, High-Current, High-Speed , , TIPL775A N-P-N MONOLITHIC DARLINGTON-CONNECTED SILICON POWER TRANSISTORS 62C 37100 ^ T-33-29~ . , switching characteristics T-33-29 PARAMETER TEST CONDITIONS TIPL775 TIPL775A UNIT MIN TYP MAX MIN .-TYP , DARLINGTON-CONNECTED SILICON POWER TRANSISTORS 62 C 37102 ^ T-33-29 ä I 0.4 0.1 TYPICAL CHARACTERISTICS , TC = 25°C 1 1 T-33-29 STATIC FORWARD CURRENT TRANSFER RATIO vs COLLECTOR CURRENT 10 k
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Original
Amphenol Assembly instructions 3524 application 501 951 IEC 130-9

TIP 122

Abstract: texas instruments tip122 Specified at 100°C T-33-29 device schematic < -w- t0-3 package E-J â  emitter the collector is , 62c 37078 T-33^-29 electrical characteristics at 25°C case temperature (unless otherwise noted , characteristics at 25°C case temperature (unless otherwise noted) T-33-29 PARAMETER TEST CONDITIONS TIPL773A , DARLINGTON 62C 37080 T-33-29 J electrical characteristics at 25°C case temperature (unless otherwise , 37081 T-33-29 D f TIPL773, TIPL773A, TIPL773B N-P-N SILICON TRIPLE TRANSISTOR ADVANCED POWER
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TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 TIP 122 texas instruments tip122 TIP 122 transistor TEXAS INSTRUMENTS TIP120 T1P120 TIP122 texas instrument

TIPL773A

Abstract: TIPL773B Designed For Complementary use with TIP625, TIP626, TIP627 T-33-29 I - . 65 W at 25°C Case Temperature , body. ! thermal characteristics 62c 36959 ' T-33-29 PARAMETER MIN TYP MAX UNIT RgjC 2.69 "CIW , INPUT MONITOR T-33-29 OUTPUT MONITOR 44" 1N914 1N914 1N914 -)l- 270 pF , SILICON POWER TRANSISTORS T-33-29 PARAMETER MEASUREMENT INFORMATION O CP < Ã" CD Cfl TEST CIRCUIT , DARLINGTON-CONNECTED SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS T T-33-29 STATIC FORWARD CURRENT TRANSFER
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7626S TRANSISTOR tipl773A NPN Transistor 1.5A 600V transistor BC 185 texas instruments transistor D037 Q037D77 0037D7

BU184

Abstract: BU189 ; 63A BDX63B; 63C S5E D bbss^i aamsa a T-33-29 r" i_ R1 R2 O- _i R1 typ. 8 kil R2 typ , power transistors S5E D â  ^53=131 Gomsi T â  BDX63; 63A BDX63B; 63C - T-33-29 characteristics , times (between 10% and 90% levels) 'Con = 3 'Bon = "Wf = 12 mA turn-on time turn-off time T-33-29 ton , OOniLl fi â  BDX63; 63A BDX63B;63C 3 il I Diode, forward voltage lp = 3 A T-33-29 VF typ. 1,2 V IM , ;63C T-33-29 A 7Z67327.1 'CMn tax 5 = 0,01
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OCR Scan
BU184 BU189 Monopulse h21E1 BU184/BU189 7T2R237 B104R

lg bd645

Abstract: BD649 philips PHILIPS/DISCRETE BDX65; 65A BDX65B; 65C bbSBTil O O m T f l 3 H5E D T-33-29 R1 typ. 5 k fi , BDX65; 65A BDX65B; 65C 5SE D bbS B 'm o a m a o T-33-29 CHARACTERISTICS (continued) Diode , transistors T-33-29 CHARACTERISTICS (continued) MM t" p! Fig. 5 Test circuit fo r turn-off , BDX65B; 65C I-1 t bfej53T3i o o m a a 5 â  SSE D T-33-29 I Mill! _ 1 1 I , Darlington power transistors 1 0 -1 D T-33-29 tp(ms) â'ž 102 Fig. 12 S.B. voltage
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OCR Scan
lg bd645 BD649 philips darlington bd 645 bd649 PNP transistor B0645 transistor D 649 T0-220
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