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T-33-11

Catalog Datasheet MFG & Type PDF Document Tags

X 13003

Abstract: 13002 â'¢ TE 13003 T-33-11 Characteristics Min. Typ. Tcm(= 25 °C, unless otherwise specified , QOGTbSi T â  TE 13002 â'¢ TE 13003 T-33-11 Fig. 1 Test circuit for: V(BRlCE0 fig. 2 Pulse diagram 245 E G CORP 17E D â  QQ2T42L. GGQTb30 S TE 13002 â'¢ TE 13003 T-33-11 50V, ITL. 'b-25[U 3 , =1A Milamp Fig. 5 Pulse diagram 246 AEG CORP 17E » 0Q2T42b OQCHb31 7 â  TE 13002 â'¢ TE 13003 _ T-33-11 , «,b3a , TE 13002 â'¢ TE 13003 T-33-11 88 8156 e
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X 13003 13002 d 13003 x 13003 13003 d sa 13002 000U5S 150OC

C 3311 transistor

Abstract: T-33-11 TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR ( T-33-11 Characteristic Symbol Rating Unit Collector-Base , NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR T-33-11 BASE-EMITTER ON VOUAQE I 8 5 , v c , PLANAR SILICON TRANSISTOR I \ POWER DERATING T-33-11 10 20 SO 100 200 500 1000 2000 5000 j 0000 , T-33-11 TO-3P , TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR * ' T-33-11 BASE-EMITTER ON VOLTAQE Vet
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KSD5015 KSD5016 C 3311 transistor T3311 transistor jt T-3311 transistor 800V 1A NPN triple diffused 1500Y

BLX13

Abstract: BLX13A ( PHILIPS INTERNATIONAL BLX13 A MIE D D 7110flSb 002771à ^ HPHIN T-33-11 CHARACTERISTICS Tj = 25 °C , PHILIPS INTERNATIONAL H.F./V.H.F. power transistor MIE D m 711002b 0027711 0 H RHIN BLX13 T-33-11 J , 41E D â  7110a2L. DD27712 2 E3PHIN BLX13 T-33-11 A 600 (MHz) ¿»00 , ( PHILIPS INTERNATIONAL 41E » B 711002b 0027713 4 HPHIN H.F./V.H.F. power transistor f | BLX13 T-33-11 , PHILIPS INTERNATIONAL H.F./V.H.F. power transistor MIE D EU 711GÃ2b l 005771S ö CiPHIN BLX13 T-33-11
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BLX13A HF band power amplifier transistor f transistor c 1971 philips Fxc 3 b PH ON 823 10-32UNF

BLX69A

Abstract: BLX69 HPHIN T-33-11 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134 , PHILIPS INTERNATIONAL U.H.F. power transistor mE D â  711Gfl2b Q027Û17 S â  PHIN BLX69A T-33-11 ,   PHIN T-33-11 1500 fT (MHz) 1000 , INTERNATIONAL BLX69A I 41E D â  711GflSb 0G27Ã2G 5 BPHIN T-33-11 APPLICATION INFORMATION (continued , INTERNATIONAL U.H.F. power transistor MIE D m 711Gô2b GQSTflai ? BPHIN BLX69A T-33-11 40 (W) 20 10 R.F
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BLX69 7Z66 TRANSISTOR D 1978 T-33-I 8-32UNC
Abstract: INTERNATIONAL SbE D 7110A5b D 0 M 3 S n fl?S T-33-11 A 100 60 5 B 120 80 C 140 V 100 V V A 10 3 65 -6 , transistors T-33-11 TIP41 ;A TIP41B;C PHIN philips international S h E T> 711DñStj , 423 P H I N T-33-11 V |M = Rb L 12 V =270« = 2 0 mH 8 'CC = 2-5 A < 1% 1 ms , 711002b 0D43S55 3bT T-33-11 Fig. 6 Safe Operating Area, T m b = 25 °C. I II Region of permissible , INTERNATIONAL 5bE D T-33-11 7110fl2b DD43523 5Tb PHIN = Fig. 7 Pulse power rating chart. 810 -
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00H3S1 SA060 7110A5 T--33--11 DD435E1 7Z82911

BR 13005

Abstract: 13005 AEG CORP 17E D â  TE 13004 â'¢ TE 13005 GOETMSfci 0G0U3b b T-33-11 Characteristics rcas, = 25 , Û â  TE 13004 â'¢ TE 13005 _ T-33-11 Fig. 1 Test circuit for: V(BR]CE0 Fig. 2 Pulse diagram 253 AEG CORP 17E D â  GOSTMSb QOOTbBñ T â  TE 13004 â'¢ TE 13005 T-33-11 'p=»25ns ^-SS- 1201 , diagram 254 AEG CORP 17E D QOSTHEti 00DU31 1 â  TE 13004 â'¢ TE 13005 _ T-33-11 aa 6039 , > m OOa^Sb 000^40 â â  TE 13004 â'¢ TE 13005 T-33-11 fcâ'"- ^CE^ 256 AEG CORP 17E » Rosislivu
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TE13004 TE13005 BR 13005 13005 13005 ballast ballast with 13005 AEG T 250 N 700 transistor 13005 T-33-U 150CC-

C 3311 transistor

Abstract: samsung tv =1500V ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) ELECTRICAL CHARACTERISTICS (Ta = 25°C) T-33-11 > Characteristic , - \ \ . \ \ \ v. T-33-11 base-emitter on voltaqe â'" s , '" le-S L-8 1.1 iW vH ils2 NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR , T-33-11 10 20 , (Ta=25°C) V T-33-11 TO-3P(F) 1. Base 2. Collector 3. Emitter Characteristic Symbol Test , SAMSUNG SEMICONDUCTOR INC NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR T-33-11 static charaöteristic
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KSD5013 KSD5014 samsung tv QS 100 NPN Transistor

T98-1

Abstract: BDT31 10% and 90% levels) «Con = 1 A; lBon = -|Boff = 0'1 A Turn-on time Turn-off time T-33-11 ton toff , PHILIPS/DISCRETE BDT31; A BDT31B; C 25E D ^53^31 Qanba4 a T-33-11 7Z82914.1 vCE (V) Fig. 4 Safe , ) 40 7Z82908 20 S 5 S s s 100 W°C) 200 Fig. 5 Power derating curve. T-33-11 7Z82909 , ; BDT31B ;A I B; C I T-33-11 10 tp(ms) 102 Fig. 7 S.B. voltage multiplying factor at the Icmax leve , epitaxial base power transistors SSE D HI ^53=131 Gontfl? 3 m BDT31; A BDT31B; C T-33-11 FE
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TIP31 BDT32 T98-1 S3T31 T-33-

darlington Vce-200V

Abstract: circuit of samsung CRT Temperature Tstg -65M50 °C ELECTRICAL CHARACTERISTICS (Ta=25°C) T-33-11 TO-220 - 1. Base 2. Collector 3 , TRANSISTOR T ' : " T-33-11 STATIC CHARACTERISTIC DC CURRENT ÛAIN 23450 1 8 9 VcrfV), COLLECTOR-EMITTER , =25°C) T-33-11 TO-220 Characteristic Symbol Rating Unit Collector-Base Voltage : BU806 Vceo 400 V , BASÃ'-EMITER SATURATION VOLTAGE T-33-11 SAFE OPERATING AREA O.t 0.2 0.5 I 2 5 10 20 50 10(5 MA), COLLECTOR
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BU407 BU407H BU807 darlington Vce-200V circuit of samsung CRT bu806 equivalent samsung crt BU806..807 BU407/407H BU806/807

transistor BC 536

Abstract: aeg power base 60 b 4 4 62 150 -65.+150 V V V A A A A W °C K/W T1.2/666.0888 E BU OJK> T-33-11 , 0.1 ms; 2f By using retrace capacitor at switching-off inductive load I " . BU 536 T-33-11 â , "¢* â r 'c * S A\ 144111 â'¢ a a 01 0.1 3 A Flg.S B .com BU 536 » T-33-11 'c- â'¢ Family
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T0126 transistor BC 536 aeg power base 60 b transistor BU 536 transistor bu 311 BU536 T0p3 VCE-1100 V777- 15A3D1N 15A3DIN

E 13003 TRANSISTOR

Abstract: c s 13003 TRANSISTOR TELEFUNKEN ELECTRONIC 17E D ODOUEfl 3 AL(S6 T-33-11 Min. Typ. Max. TE 13002 · TE 13003 , Q U0-5W 'c - a 2 A _ r f» C 1 6 0 lB =BOmA - ^ v è ,- o .3 o v / ís - b a j ¿ C » 125 mH T-33-11 , . TE 13003 SO V. T-33-11 ITL tp m 2 5 +VS - 1 2 5 V p$ *-2 £ §30 126 Q 100 H , TE 13002 * TE 13003 _ T-33-11 ALG6 < o _1 n n s 1001H 101« A 0.5 1 V , -06 TELEFUNKEN ELECTRONIC 17E D fi^SOO^b 000*^33 T-33-11 TE 13002 · IE 13003 _ AL66
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E 13003 TRANSISTOR c s 13003 TRANSISTOR W 13003 TRANSISTOR 13002 TRANSISTOR transistor 13002 LM 13003 T-33-II 0IN41 I3-75

BLV97

Abstract: IEC134 41E D â  711002h 002730^ T HPHIN T-33-11 MECHANICAL DATA Fig.1 SOT171. Pinning Base Base , transistor HIE D â  7110021=1 00573^0 b BPHIN BLV97 T-33-11 RATINGS Limiting values in accordance with , Its Respective Manufacturer r r PHILIPS INTERNATIONAL BLV97 X 41E D n 7110fi2b GOSTB^l a BPHIN T-33-11 , BLV97 T-33-11 UQC J IPHIN APPLICATION INFORMATION RF performance at T^ = 25 °C in common-base , «PHIN T-33-11 F3 _eopc»r straps,.
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IEC134 7Z97299 7Z97298 7Z94379

HF 13003

Abstract: 13003 - â'" TELEFUNKEN ELECTRONIC 17E D â  OOOIbSA TE 13002 â'¢ TE 13003 ~ T-33-11 Characteristics , TE 13002 â'¢ TE 13003 « - T-33-11 i I AL6 , ! 17E p TE 13002 . TE 13003 fl^somb DDD1b3D 1 T-33-11 50 V, TL lp-26 ps - 1260 30 3 100 pF , T-33-11 IAL66 1 A 0.5 0.1 0.05 Q01 Fig.7 'p-1ms ^soot rcas«-25=C 10 10011« 10t» S , 000^^35 S «ALCG i T-33-11 S VCEsat 0.01 «â'¢ )lH ff
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OCR Scan
HF 13003 electronic ballast 13003 sw 13003 LB 13002 BR 13003 HF 13002 OQDU33

C 3311 transistor

Abstract: RZ2731B16W NPN silicon planar epitaxial microwave power transistor T-33-n T-33-11 Product specification , Components NPN silicon planar epitaxial microwave power transistor T-33-11 T-33-11 Product specification , Material Copyrighted By Its Respective Manufacturer Philips Components T-33-11 Product specification
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RZ2731B16W tRANSISTOR 2.7 3.1 3.5 GHZ cw FO-57D T-33-1 HCB553

BDT41

Abstract: BDT41A Accessories. June 1988 487 N AflER PHILIPS/DISCRETE BDT41;A BDT41B;C ESE D bfc.53T31 0011714 S T-33-11 , GDn?lS 4 â  BDT41A BDT41B;C T-33-11 E(BR) > 62,5 mJ lon toff 7Z77499.5 typ. typ. 0,6 US 1 jus , QQlTTlb b - T-33-11 vim-o â'" 1 tp 7Z89170 Fig. 4 Test circuit for turn-off breakdown , 25E D Silicon epitaxial base power transistors 1^53^31 DQn71? a â  BDT41A BDT41B;C 7282923 T-33-11 , PHILIPS/DISCRETE ESE D â  bb53"l31 001^720 ñ â  BDT41;A BDT41B;C , -y V- T-33-11 7Z82916
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BDT42 T0-220AB 7Z82920 7Z82919 7Z82918

NPN Transistor 5A 400V

Abstract: C 3311 transistor Temperature Tstg -55-V150 ELECTRICAL CHARACTERISTICS (Ta=25°Q) - T-33-11 TO-3P(F) 1. Base 2. CoBectot 3 , KSD5017 I ime D |7ib4i4a aaa7bfli a NPN IHIPLE DIFFUSED PLANAR SILICON TRANSISTOR T-33-11 STATIC , SEMICONDUCTOR INC NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR T-33-11 REVERSE BIAS SAFE OPERATING AREA , USE IN HORIZONTAL DEFLECTION OUTPUT STAGE ABSOLUTE MAXIMUM RATINGS (Ta=25C) T-33-11 , DERATING T-33-11 DC CURRENT GAIN 5 10 ZO 50 100 200 5001000 2000500010000 lc(mA), COLLECTOR CURRENT
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BU406 BU406H BU408 NPN Transistor 5A 400V KSD5017 transistor horizontal transistor BU406/406H/408

diode lt 238

Abstract: samsung SSE SAMSUNG SEMICONDUCTOR INC KSD5011 im e d I ao a?tta 4 N P N T R IF L t DIFFUSED P L A N A R SIL IC O N T R A N SIS T O R T-33-11 I C O L O R TV HORIZONTALNOUTPUT APPLICA TIO N S (DAM PER DIO DE BUILT IN) High Collector-Base Voltage V cbo =1500V TO-3P(F) A BSO LU T E M A X , PN T R IP L t U ii-h ü StD P L A N A R SIL IC O N T R A N SIST O R T-33-11 STATIC CHARACTERISTIC , A R S IL IC O N T R A N SIS T O R T-33-11 POWER OERATfNG im e o T 'itm M aa o G 7bt4 a | 10
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diode lt 238 samsung SSE lt 332 diode GQG77

BD203

Abstract: BD201 accordance with the Absolute Maximum System (IEC 134) 7iioa2b acme?1^ tq2 i T-33-11 IP HI N= BD201 , Bon = Boff = 0.2 A turn-on time turn-off time SbE J> J_L T-33-11 JL BD201 BD203 BDX77 7110û2b , DD420Ql_^i IPHIN T-33-11 7226602 Fig.4 Safe Operating Area; Tmb < 25 °C. I Region of permissible DC , epitaxial-base power transistors T-33-11 A BD201 BD203 BDX77 PHILIPS INTERNATIONAL 3 -th j-mb SbE 3 , Material Copyrighted By Its Respective Manufacturer BD201 BD203 BDX77 PHILIPS INTERNATIONAL M| SbE D T-33-11
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BD202 BD204 BDX78 BD203 npn

BUT93

Abstract: BY22B °C K/W T1.2/229.0888 E 155 ' E fi CORP BUT 93 17E D 005T42b 0DQC1S4Q 4 T-33-11 , _-_ T-33-11 Fig. 1 Test circuit for: V(BR]CE0 Fig. 2 Pulse diagram 157 AEG CORP BUT 93 17E D â  ODSTMSIa DÃG1S4S fi â  T-33-11 "_TL lp=25 ps " - 82 0 Sâ'"-C3- 121) I -1- 100 uF 10 V HH _V,BEoff , 158 A E G CORP 17E D 002=1421, 000=1543 T BUT 93 T-33-11 ae eoga , FÏpl 0.01 0.1 10 ms 159 A E G CORP 17E j> BUT 93 GGS^t QOOTSMM 1 â  T-33-11
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BUT93 BY22B AEG v 300 14A3 BFX34 BY228 005T42 0G2142

13005 ballast

Abstract: 13005 ELECTRONIC TE 13004 â'¢ TE 13005 17E D â  fllSODSb 00Cnfe>3b 5 t T-33-11 Characteristics 7" â'" ZS°C , -10 17E J) ñÃHDCHt. DOCnta? n TELEFUNKEN ELECTRONIC IALGG F TE 13004 « JE 13005 _ T-33-11 BC160 , '¢ TE 13005 17E D â  fl^eoo^b ODQ^bBB b T-33-11 IAL6G 50 V, TL fp-25 |IS . 62 0 »â'"H=3- 120 ,   fl^GCHb OOCHba'J TE 13004 â'¢ JE 13005 _ . T-33-11 IAL66 rtot 50 w 40 30 20 10 Fig. 6 40 ,   Ã^EPO^b ODOIbMO 4 â  ALGG t T-33-11 vBEsat "FE 50 10 1 rcase-25°c 0.01 256 2777 0.1 VCE-2V â
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Electronic ballast with 13005 E13005 13005 2 13005 s 13004 E 13005 s T-33MI S64542

transistor BU 536

Abstract: on 2518 transistor TELEFUNKEN ELECTRONIC 'ïTifLf(FMKdM electronic C re a tiv eT e c b n o to jp e * 17E D Ô ^ Ü O T b 000e ]L iö3 3 ALG6 · BU 536 T-33-11 · Short switching time · Power dissipation 62 W , TELEFUNKEN ELECTRONIC B U O JO Min. 1 ?E » fl'teOO'lb DDO'JMaH s T-33-11 Typ. Max. IALGG j , *ALfiG · BU 536 T-33-11 ` thp 1 - K /W 0.59 U.VO-, V 0.1 0.05 0.02 Fig . 3 , 17E D T-33-11 OOCHMBb R A L G G 102, 2623 E -1 4 TELEFUNKEN ELECTRONIC 17E J
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on 2518 transistor 536 transistor

BD241

Abstract: BD241A ooi^t, 3 T-33-11 RATINGS Limiting values in accordance with the Absolute Collector-base voltage , bbSBTBl 00113^7 S â  BD241; BD241A BD241B; BD241C T-33-11 3 MHz lon typ. 0,3 fis t0ff typ. 1 us , Manufacturer N AMER PHILIPS/DISCRETE: BD241; BD241A BD241B; BD241C â'¢X SSE D â  bbS3=i31 QDn4D2 S T-33-11 , rtot max (%) 100 SO 5SE D m bbS3T31 00n403 7 â  BD241; BD241A BD241B; BD241C j ijji A 7Z6295U T-33-11
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BD242 S3131 7Z88345

D F 331 TRANSISTOR

Abstract: lt 332 diode SAMSUNG SEMICONDUCTOR INC 14E 0 17^4142 OOQ?bkS T KSD5012 NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR T-33-11 I COLOR TV HORIZONTAL OUTPUT APPLICATIONS (DAMPER DIODE BUILT IN) High Collector-Base Voltage VCb o = 1 5 0 0 V TO-3P(F) ABSOLUTE MAXIMUM RATINGS (Ta= 25 , NPN T R .ru « ; u ir r u a c u PLANAR SILICON TRANSISTOR T-33-11 BASE-6M1TTER ON VOLTAGE 2 3 4 5 , PLANAR SILICON TRANSISTOR T-33-11 REVERSE BIAS SAFE OPERATING AREA ÍO 20 50 100 200
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D F 331 TRANSISTOR transistor t 04 27 NPN Transistor 1A 800V to - 92 00077S7
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