500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
UDT020A0X3-SRZ GE Critical Power CONV DIGITAL 5.5V 20A POL SMD visit GE Critical Power
APXS003A0X-SRDZ GE Critical Power CONVER DC/DC 0.59 5.5V @ 3A SMD visit GE Critical Power
EL7182CSZ-T7 Intersil Corporation 2-Phase, High Speed CCD Driver; PDIP8, SOIC8; Temp Range: -40° to 85°C visit Intersil Buy
EL7182CSZ Intersil Corporation 2-Phase, High Speed CCD Driver; PDIP8, SOIC8; Temp Range: -40° to 85°C visit Intersil Buy
EL7182CSZ-T13 Intersil Corporation 2-Phase, High Speed CCD Driver; PDIP8, SOIC8; Temp Range: -40° to 85°C visit Intersil Buy
EL7182CS Intersil Corporation 2A CCD DRIVER, PDSO8, SO-8 visit Intersil

Solitron Devices Datasheet

Part Manufacturer Description PDF Type
1N3899 Solitron Devices Planar Fast Recovery Rectifiers Scan
1N3900 Solitron Devices Planar Fast Recovery Rectifiers Scan
1N3901 Solitron Devices Planar Fast Recovery Rectifiers Scan
1N3902 Solitron Devices Planar Fast Recovery Rectifiers Scan
1N5312 Solitron Devices Diode - Datasheet Reference Scan
2N2386 Solitron Devices General Purpose P-Channel FETs Scan
2N2386 Solitron Devices Low Power Field Effect Transistor, Case Style = TO-5, Geometry = FP5.3... Scan
2N2386A Solitron Devices General Purpose P-Channel FETs Scan
2N2497 Solitron Devices Low Power Field Effect Transistor, Case Style = TO-5, Geometry = FP5.3... Scan
2N2497 Solitron Devices General Purpose P-Channel FETs Scan
2N2498 Solitron Devices Low Power Field Effect Transistor, Case Style = TO-5, Geometry = FP5.3... Scan
2N2498 Solitron Devices General Purpose P-Channel FETs Scan
2N2499 Solitron Devices Low Power Field Effect Transistor, Case Style = TO-5, Geometry = FP5.3... Scan
2N2499 Solitron Devices General Purpose P-Channel FETs Scan
2N2500 Solitron Devices Low Power FET, RF Amplifiers, P-Channel FETS Scan
2N2500 Solitron Devices Low Power Field Effect Transistor, Case Style = TO52, Geometry = FP5.3... Scan
2N2500 Solitron Devices General Purpose P-Channel FETs Scan
2N2606 Solitron Devices Low Power Field Effect Transistor, Case Style = TO18, Geometry = FP22.... Scan
2N2606 Solitron Devices General Purpose P-Channel FETs Scan
2N2607 Solitron Devices Low Power Field Effect Transistor, Case Style = TO18, Geometry = FP5.3... Scan
Showing first 20 results.

Solitron Devices

Catalog Datasheet MFG & Type PDF Document Tags

SOLITRON DEVICES

Abstract: SOLITRON SOLITRON DEVICES INC fll »E| flBtatoi" 0002E41 1 (" 8368602 SOLITRON DEVICES INC -81C , â'¢ 32 1 SOLITRON DEVICES INC fll Ì>EJ ÃBbfltüE 0002542 3 | 8368602 SOLITRON DEVICES INC 81C 022WZ d â'¢ T- 77-07-/J : type no. £ T / GROUP A ANO/OR PERFORMANCE , - 8368602 SOLITRON DEVICES INC SOLITRON DEVICES INC Al De| fl3bflb02 0002243 S f -81C 02243 D , C ££T/o3 /fjv-. SOLITRON DEVICES INC fll DF| 03bflbOS ODOaBMil 7 8368602 SOL ITRON DEVICES INC
-
OCR Scan
JIS73 SOLITRON DEVICES SOLITRON TH40 0D0224S

185AJJ006

Abstract: solitron devices SOLITRON DEVICES 561 863 5946 11/21/02 18:18 0 :02/08 N0:092 SOLITRON DEVICES, INC , / 6082 FS'2003A PACKAGES Gi BULK PACKAGING PACKAGE MARKING SOLITRON DEVICES INC. (b) CAGE/MFR 21845 P , DESCRIPTION PAGE 1 OF 3 SOLDS00206 SOLITRON DEVICES © 561 863 5946 11/21/02 18:18 0 : 0 3 / 0 , 120 0.6 1.5 - · PULSED: P.W.-300nSEC D.C.=2% REV. A PAGE 2 OF 3 SOLITRON DEVICES © 5 6 1 863 5946 11/21/02 18:18 0 : 0 4 / 0 8 N0:092 SOLITRON DEVICES, INC. PRODUCT
-
OCR Scan
185AJJ006 Solitron Transistor 183AJJ006 185AJJ SDT7A06 VCB-100V I8SAJJ006

solitron devices

Abstract: SOLITRON DEVICES INC bl » F | fl3t,flbD2 D D D m 3 a 3 | ~ _ 61C 01432 - A H , stbz S . o V . i 'S&O j u A *S~ao jj A Soo 2JA *S ae' .f^A SOLITRON DEVICES INC hi D E | fl3bflb05 D D D m B B S INC f~ 61C 0 1 4 3 3 D_ 8368602 SOLITRON DEVICES ~t
-
OCR Scan
DDQ14BS

2N5530

Abstract: LC117 / 2N5529 2N5530 2N5533 2N5534 solitron devices inc ELECTRICAL CHARACTERISTICS ( TC = 25°C UNLESS , :Afterexposure1x1014nvt,'FLUX a 10KEV 21 8368602 SOLITRON DEVICES INC 66C 01914 D 7"'"33-U |fl3bflbD5 DDDi^m ⡠I , 0 0 1 1.0 IC COLLECTOR CURRENT-A 10 22 8368602 SOLITRON DEVICES INC ttc d i fl3bflbüa ooonis i RADIATION RESISTANT NPN SILICON POWER TRANSISTORS 2N5529 2N5530 2N5533 2N5534 SOLITRON DEVICES , '33-// RADIATION RESISTANT NPN SILICON POWER TRANSISTORS solitron devices inc PULSED OPERATION 2N5529 2N5530
-
OCR Scan
LC117 solitron transistors NPN Transistor 10A 24V V2 3N DIODE 8-83-2R

MS8211

Abstract: solitron devices SOLITRON DEV ICES INC 8368602 SOLITRON DEVICES INC "flt D E | ñ3L,ñbOH 000S3tiS ñ eèb ^02365 D 7"- 3 3 - o Solitron DEVICES, INC. MS8111 MS8121 MS8211 SCHQTTKY DIODES MS8221 MS8311 LOW THRESHOLD SCHOTTKY DIODES 35 MILLI AMPERES FEATURES 100 mA RATING APPLICATIO N S LOW THRESHOLD SWITCHING ABSOLUTE MAXIMUM RATINGS MS 8111 V BR If f (surge) MS 8121 5V , * T E LE X : 51-3435 8368602 SOLITRON DEVICES INC SOLITRON DEVICES INC SCH O TTKY DIODES
-
OCR Scan
000S3

SOLITRON DEVICES

Abstract: 2N3469 SOLITRON DEVICES INC tl »F|öBbäLDS OOOD4LjS 2 8368602 SOLITRON DEVICES INC 6iC 00465 D POWER TRANSISTORS 2N3469 r-ff-'t NPN SILICON POWER TRANSISTORS MEDIUM POWER 5 AMPERES FEATURES GAIN LINEARITY LOW SATURATION VOLTAGE APPLICATIONS MEDIUM POWER, HIGH FREQUENCY SWITCHING AND , (100°C) 4 W 6-83-184 11-27 SOLITRON DEVICES INC bï DE |fl3L,ûkDE â¡ â¡â¡â¡4L.L 4 .â  .V. .â'¢â â'¢.^-.v. : ^ . â  . i 8368602 SOLITRON DEVICES INC 61C 00466 POWER
-
OCR Scan
2N2657 rfft 2N265 2N3469------- 2N265I
Abstract: SOLITRON DEVICES INC bl 8 3 6 8 6 0 2 SOL ITRON D E V I C E S INC DiF| 03t,flbaS DDDISSD , -e.au *j ù * · Vo 0 .3 SC V A 1 /4 Xs 33 - SOLITRON DEVICES INC bl 8368602 SOLITRON DEVICES INC D eT | a3t.flL.0E OOOISEI 5 6 1C 0 1 5 2 1 _D _ T -5 2 -1 3 -1 5 TYPE , , o l / i 'o S U SOLITRON DEVICES INC L . 1 D E I fl3bflfcj02 000 1S 2S 4 8368602 SOL ITRQN DEV , S X /M / X 9 9 J T .v 11 SOLITRON DEVICES INC bl 8 3 6 8 6 0 2 SO L I T R O N D E V I C E S -
OCR Scan
T--52--13-15 T-52-13-15

80t71

Abstract: SOLITRON SOLITRON DEVICES INC »rjñ3bñb0a DOOObEi t 8368602 SOLITRON DEVICES INC 61C 00629 0 POWER TRANSISTORS SDT712 SDT71A r-5 3-// NPN SILICON POWER TRANSISTORS HIGH VOLTAGE 3 AMPERES FEATURES PLANAR CONSTRUCTION FAST SWITCHING HIGH RELIABILITY APPLICATIONS HORIZONTAL AND VERTICAL , 9-83-EQ 111-27 2459 fl-04 â'ž . . SOLITRON DEVICES INC DEjaatflbDa üggüLbg a ~rrr , SOLITRON DEVICES INC POWER TRANSISTORS SDT712 SDT714 ELECTRICAL CHARACTERISTICS ( Tq = 25°C UNLESS
-
OCR Scan
80t71 18368 a602

solitron transistors

Abstract: SP45H SOLITRON DEVICES INC TÏ DÉTJj öB bf i b DS 0001114 D 8 3 6 8 6 0 2 S O L I T R O N D , «EUES 11-83-204 V-120 2944 W ? » 'I , * * 'J m SOLITRON DEVICES INC ~Wh D Î T | û 3 , 200 PF 135 ns 500 ns 100 ns td + tr ts tf SOLITRON DEVICES INC bl D F | ô 3 b flb O a 111b 4 I " 8368602 SOLITRON DEVICES INC 61C 0 1 1 .1 6 POWER TRANSISTORS SP45H1 , RESISTIVE SW ITCHING C K T . F IC .1 < bi 9V cc > r l SOLITRON DEVICES INC bl DT|fl3tat,DS
-
OCR Scan
SP45H SP45H2 SP45H4 SP45H5 SP45H7 SP45H8 SP45H10

2N5531

Abstract: j3305 â'" SOLITRON DEVICES INC bb DE|û3bflbD2 OODl^D? ? â'ž Q r RADIA TION RESISTANT NPN SILICON , AMPERES 15 SOLITRON DEVICES INC = ^ 03bflbD2 GGDllDfl M J-_'-33~05 _ RADIATION RESISTANT NPN SILICON , 300/isec, 1.8 Duty Cycle Note 2: After exposure, 1 x1014 nvt, FLUX > 10KEV 16 SOLITRON DEVICES INc , 0.25ms 0.1ms 0.3V1 0.4V1 0.6V1 0.8V1 VCCWVce 17 SOLITRON DEVICES INC bb ö3t,öb05 DDOIHQ E , 8 OOO L IN /iH 18 M _SOLITRON DEVICES INC hi 1>E) fiBbflbOa â¡ â¡â¡mi 4 Tr33"05 RADIA TION
-
OCR Scan
2N5527 2N5531 2N552 j3305 silicon power transistors TR-33 TR33
Abstract: SOLITRON DEVICES INC bl 8 368 602 S OL IT RON DEV ICES.J _ N ¿ I _ I H p u f it G * T 2> ^ Î>Ë| 0 3 1 ^ 0 5 QQD14S1 T | - Ì1 L . Ò 1 4 2 1- . 0 =i_ . [ty p e no, CßCA U S MIN. MAX. UNITS GROUP A A N D /O R PERFORMANCE CHARACTERISTICS MO. 1 2 3 4 S 6 7 3 9 10 , J - ôA 0 30 31 32 » i y SOLITRON DEVICES INC bl 8368602 S OLITRON DEVICES INC , piag xam Sc h e m a t i c SOLITRON DEVICES INC f c . 1 8368_60 2 SOLITRON DEVICES INC D E j -
OCR Scan

solitron transistors

Abstract: SOLITRON DEVICES SOLITRON DEVICES INC â'4 / - ' tl v - ,â'ž â'¢ Ã" - - * - 8 3 6 8602 v . " «¿-" ' V1- SOLITRON DEVICES - c »F|fl3böbDa OaOD47t, 7 â'¢ v ;^ -: â'¢ ' -â  : W i m -1 " - - - - - - -i â'¢ -^ 61C 00476 INC. D POWER TRANSISTORS 2N3750 , RESISTANCE, JUNCTION TO CASE Pd POWER DISSIPATION (100°C) 3.33°C/W 30 W 4-83-184 SOLITRON DEVICES INC 8368602 "bl SOLITRON DEVICES 6 IC INC
-
OCR Scan
2N3751 2N3752 2N2878 2N2880

80t71

Abstract: SDT710 SOLITRON DEVICES INC tï DE |fl3bflt,02 0000^27 2 | 8368602 SOLITRON DEVICES INC. â'¢v . â'¢ . V- '-., .-â'¢v-V Cv-" - -'-\;V V "Oír. f^ZZ'ií'-'-Hi V ?r vvv '-y-^'C- ÃV-Ã1- * -'^í'-'-í-' 61C 00627 D POWER TRANSISTORS SDT710 NPN SILICON POWER TRANSISTORS HIGH VOLTAGE 3 AMPERES , tíglIlpP»^ SOLITRON DEVICES INC ti cflaabflbge odoobsa 4 â'¢ â'¢. . . ^v- â'¢â'¢ .-â'¢â'¢â'¢ v â A"- - -â'¢â'¢ .â'¢â'¢'.â'¢â'¢â'¢ â'¢â'¢"=â'¢" vn".;^ -0368602.â'žSOLITRON DEVICES INÇ POWER
-
OCR Scan
Scans-0014580

2N3204

Abstract: 2N3203 SOLITRON DEVICES INC tï DE J flHbñbDE OODOTBT O i, _ E* .i â'ž8368602 SOLITRON DEVICES INC 61C 00939 D POWER TRANSISTORS 2N3202 2N3203 2N3204 -r-is-t-? PNP SILICON POWER TRANSISTORS MEDIUM POWER 3 AMPERES FEATURES PLANAR CONSTRUCTION LOW SATURATION VOLTAGES FAST SWITCHING APPLICATIONS HIGH SPEED SWITCHING CIRCUITS POWER AMPLIFIER TO-5 ABSOLUf E MAXIMUM RATINGS 2N3202 2N3203 2N3204 vCBO , _- . -_.!». ~ - :_8 368602 SOLITRON DEVICES INC _61C 00940_ POWER TRANSISTORS » 2N3202
-
OCR Scan
SDT3775 SDT3776 SDT3777

solitron transistors

Abstract: Solitron Devices n-rg-rfiìf.r-n «Tf SOLITRON DEVICES INC DF|ñ3bñb05 000Gti53 S I^7 .836860 2 solitron j^v iÅ"jlj nc, , _ 61c 00623 0 POWER TRANSISTORS SDT702 SDT704 NPN SILICON POWER TRANSISTORS HIGH VOLTAGE 3 AMPERES FEATURES PLANAR CONSTRUCTION FAST SWITCHING HIGH RELIABILITY , DISSIPATI0N(25°C) 60W 9-83-EQ 111-21 SOLITRON DEVICES INC bl DE |fl3bflbD5 DDGGtaq 7 P- â'¢ ^ . ^ ^ , yz-y^-sZ-r. : 'â'¢â'¢: -,; . _ .8368602 solitron devices inc_ 61c 00624 0 POWER TRANSISTORS . . , -.».
-
OCR Scan
1400v npn

SPK1300

Abstract: 327B4 8368602 SOLITRON DEVICES INC _ fib 86D 02439 n . -rr 3 3 0 I i D E , 600mA 12 3 .0 · yi 20 NOTES: Customer: General Purpose 8368602 SOLITRON DEVICES , = J VCc = 300V * NOTES: Customer: General Purpose 0368602 SOLITRON DEVICES INC , MINARY DE 103Lifl!=i02 0G0544E D | Solitron Devices, Inc. S P E C I F I C A T I O N S MAXIMUM , Purpose m m 8368602 .'U W P ;n , * y SOLITRON DEVICES fib INC D E | Ô3bûb02
-
OCR Scan
SPK1100 SPK1300 SPK1150 SPK1350 327B4 1-A30 00E4M
Abstract: SOLITRON DEVICES INC hi DE) 03t.abDB ÃOQ144Q 2 8368602 SOL ITRON DEVICES INC 61C 01440 . QA -JZ,Qjf-()7 , ^"S"0-CUSP ¡03 GROUP A AND/OR PERFORMANCS CHARACTERISTICS NC. ! SYMBOL CONDITIONS , bonded durlo« | destructive bond teats. . | | IP SOLITRON DEVICES INC bl DE| 0001441 4 836860 2 SOLITRON DEVICES INC 01441 . 0; T-62'Ol rPENQ .Q.1SP 103 ADDITIONAL REQUIREMENTS .ids .145 T , : Mamifseturine «ri «ntrals | | 26 Baad strength 27 28 Devices shall be »ubjeeted ta the following -
OCR Scan

2n4906

Abstract: 2N4904 SOLITRON DEVICES INC bl íF|ñ3bñt.D5 ILL 5 8 3 6 8 6 02 S O L I T R ON D E V I C E S INC 6 1C, ° £ 9 6 6 .- P. J POWER ÎRÀNSISTORS -,_ 2N4904 2N4905 2N4906 -, * - _ - S \ PNP SILICON POWER TRANSISTORS MEDIUM POWER 5 AMPERES FEATURES PLANAR CONSTRUCTION FAST SWITCHING , 2796 0 -0 5 / SOLITRON DEVICES INC bl DE j ö 3 1,f l t, 5 DODDTt.7 4 |~~ 8368602 SOLITRON DEVICES INC 61 C 0 0 9 6 7 - . POWER TRANSISTORS
-
OCR Scan
IV-30 2N49042N49052N4906 2N490S SDT372S IV-31

Z3J1

Abstract: SOLITRON DEVICES INC "bï 8368602 SOLITRON DEVICES Ï)ËJ Û3bfib02 0D01501 ? INC_ _ f 61C 01501 q PfXt-V o j r f j r U >{Ttf tUtt-T- /aJ SCt t T-58-II-I3 f' tfo'CtrCTfO+J a r c u j i O b " T Y P 5 NO. N O . SYM BO L GROUP A AND/OR PERFORMANCE CHARACTERISTICS CO N D ITIO N S M IN . MAX. U N ITS V V V V V ,4 A A A¿y? 1 2 VouT 3 \JouT 4 VouT* 5 6 7 , c2.S rz> A A ¡A- SOLITRON DEVICES INC bl 8368602 SOLITRON DEVICES INC DEjfiBbflbOS OQOISDB
-
OCR Scan
Z3J1

transistor u8 2w

Abstract: transistor npn U8 _8368602 SOLITRON DEV_ICES_ inç_,_- 66.ç 9 _ radia hun htö/ö ïmNT npn silicon power , npn silicon power transistors SOLITRON DEVICES INC 2N5535 2N5536 2N5537 2N5S38 SAFE OPERATING AREA , . PT < PT = f(VCE) Area A VCE IN V 30 8368602 solitron devices inc 66C 01923 D T'33~D radiation , '33'/ i radiation resistant npn silicon power transistors 2N5535 2N5536 2N5537 2N5538 solitron devices , D 1 fl3bflb02 DODnn T D t~'33 "/ / radiation resistant npn silicon power transistors SOLITRON
-
OCR Scan
transistor u8 2w transistor npn U8 r5c transistor bbc cs 1 8-83-3R
Showing first 20 results.