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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

SmD TRANSISTOR a75

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SmD TRANSISTOR a75

Abstract: Transistor RF Radio Frequency SMD Surface Mounted Device VSWR Voltage Standing Wave Ratio , BLF7G20LS-140P Power LDMOS transistor Rev. 2 â'" 17 August 2010 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at , 1805 to 1880 850 28 60 17.5 41 â'61 â'75 2.7 1.2 Features and benefits Ì , -140P NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin
NXP Semiconductors
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SmD TRANSISTOR a75 ACPR400 ACPR600 2002/95/EC IS-95
Abstract: (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN , PBSS303PZ 30 V, 5.3 A PNP low VCEsat (BISS) transistor Rev. 02 â'" 20 November 2009 Product , ) transistor 2. Pinning information Table 2. Pinning Pin Description 1 base 2 , (BISS) transistor 5. Limiting values Table 5. Limiting values In accordance with the Absolute , ) 1.5 1.0 (3) 0.5 0 â'75 â'25 25 75 125 175 Tamb (°C) (1) Ceramic PCB NXP Semiconductors
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PBSS303NZ

SmD TRANSISTOR a75

Abstract: HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7485U3, 2N7486U3 , dose and single event effects (SEE), power transistor. Two levels of product assurance are provided , figure 1, (surface mount, TO-276AA, SMD-0.5). 1.3 Maximum ratings. TA = +25°C, unless otherwise , -276AA, SMD-0.5). 3 B M MIL-PRF-19500/704E 3. REQUIREMENTS 3.1 General. The individual item , . Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 (TO-276AA, SMD
International Rectifier
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MIL-PRF-19500/704D 2N7487U3 2N7555U3 IRHNJ57133SE IRHNJ57230SE IRHNJ57234SE

SmD TRANSISTOR a75

Abstract: (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic , PBSS303PX 30 V, 5.1 A PNP low VCEsat (BISS) transistor Rev. 02 â'" 20 November 2009 Product , Semiconductors 30 V, 5.1 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning , Semiconductors 30 V, 5.1 A PNP low VCEsat (BISS) transistor 5. Limiting values Table 5. Limiting values , Ptot (W) (1) 2.0 (2) 1.5 1.0 (3) 0.5 0 â'75 â'25 25 75 125 175
NXP Semiconductors
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PBSS303NX

SmD TRANSISTOR a75

Abstract: ) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic , PBSS5580PA 80 V, 4 A PNP low VCEsat (BISS) transistor Rev. 01 â'" 6 May 2010 Product data , heat sink for excellent thermal and electrical conductivity Leadless small SMD plastic package with , 80 V, 4 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin , (BISS) transistor Table 5. Limiting values â'¦continued In accordance with the Absolute Maximum
NXP Semiconductors
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PBSS4580PA

TRANSISTOR SMD MARKING CODE A45

Abstract: (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN , PBSS304PZ 60 V, 4.5 A PNP low VCEsat (BISS) transistor Rev. 02 â'" 8 December 2009 Product , © PBSS304PZ NXP Semiconductors 60 V, 4.5 A PNP low VCEsat (BISS) transistor 2. Pinning information , PBSS304PZ NXP Semiconductors 60 V, 4.5 A PNP low VCEsat (BISS) transistor 5. Limiting values Table , . 006aaa560 2.5 Ptot (W) 2.0 (1) (2) 1.5 1.0 (3) 0.5 0 â'75 â'25 25 75
NXP Semiconductors
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TRANSISTOR SMD MARKING CODE A45 PBSS304NZ

SmD TRANSISTOR 42T

Abstract: smd 42t SIEMENS BUZ 100 SIPMOS ® Power Transistor â'¢ N channel â'¢ Enhancement mode â'¢ Avalanche-rated â'¢ dv/df rated â'¢ Ultra low on-resistance â'¢ 175°C operating temperature â'¢ also in TO-220 SMD available Type Vbs > D ffDS(on) Package Ordering Code BUZ100 50 V 60 A 0.018 a TO-220 AB C67078-S1348-A2 Maximum Ratings Values Symbol Parameter Continuous , ^thJC
-
OCR Scan
SmD TRANSISTOR 42T smd 42t
Abstract: Replaces APEX PA21 Available to DSCC SMD 5962-92152 Space Efficient Dual Amplifier High Voltage , ±15 mV - ±30 - µV/°C - ±100 ±750 nA - ±5 ±75 nA INPUT , TA=TC=+125°C Subgroup 3 TA=TC=-55°C 7 Does not apply to MSK 184. 8 Refer to SMD 5962-92152 for , output transistor times the output current. As can be seen in the curve, safe operating current decreases with an increase in temperature as well as an increase in the voltage across the output transistor MS Kennedy
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ISO-9001 MSK184 MIL-PRF-38534 MSK183 MSK182 MIL-PRF-38534/DSCC
Abstract: Replaces APEX PA21 and PA74 Available to DSCC SMD 5962-92152 Space Efficient Dual Amplifiers High , - ±5 ±75 nA - â"¦ INPUT Input Offset Voltage VIN=0V Input Offset Voltage , =+25°C Subgroup 2 TA=TC=+125°C Subgroup 3 TA=TC=-40°C 7 Does not apply to MSK 184. 8 Refer to SMD 5962-92152 , the device is equal to the product of the voltage across the output transistor times the output , temperature as well as an increase in the voltage across the output transistor. Therefore, for maximum MS Kennedy
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AD8346s

Abstract: AD8041S cost, shorter lead time alternative to source control drawings, if the device is not offered as an SMD , ±15 ±75 0.5 11 0.5 120 1.45 OP270S Dual very low noise precision op amp 2 ±15 ±75 1 11 5 106 6.5 OP400S Quad low offset, low power op amp 4 ±15  , , LCC 1 ±5, ±15 ±75 0.5 3.8 10 100 3.5 Flatpack 2 ±1.5, ±15  , MAT03S Description Low noise matched dual NPN transistor Low noise matched dual PNP transistor
Analog Devices
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AD8346s AD8041S ADCLK925S analog devices lot number G09366-0-9/13

REGULATOR sw 13003

Abstract: 13003 switch mode circuit external NPN transistor. Connect this pin to the external power NPNâ'™s emitter. This pin also supplies , transistor. -2- www.active-semi.com Copyright © 2012 Active-Semi, Inc. ACT334 Rev 2, 14 , transients and compensated with the internal compensation network, modulates the external NPN transistor , . SW is a driver output that drives the emitter of an external high voltage NPN transistor. This , resistor from the rectified high voltage DC rail supplies current to the base of the NPN transistor. This
Active-Semi
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REGULATOR sw 13003 13003 switch mode circuit
Abstract: BFQ149 PNP 5 GHz wideband transistor Rev. 03 â'" 28 September 2007 Product data sheet , specification PNP 5 GHz wideband transistor DESCRIPTION BFQ149 PINNING PNP transistor in a SOT89 , ) and in microwave amplifiers such as radar systems, spectrum analysers, etc., using SMD technology , ' fT transition frequency IC = â'75 mA; VCE = â'10 V; f = 500 MHz; Tj = 25 °C 4 5 â , 2 of 7 NXP Semiconductors Product specification PNP 5 GHz wideband transistor BFQ149 Philips Semiconductors
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smd transistor marking A6

Abstract: BCV64B 6 pin BCV64B PNP general-purpose double transistor Rev. 4 â'" 2 August 2010 Product data sheet 1. Product profile 1.1 General description PNP general-purpose double transistor in a small SOT143B Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP , Low current (max. 100 mA) Low voltage (max. 30 V and 6 V) AEC-Q101 qualified Small SMD plastic , Min Typ Max Unit - - â'100 mA V Per transistor collector current IC
NXP Semiconductors
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smd transistor marking A6 BCV64B 6 pin BCV63B
Abstract: ) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement , PBSS4041PT 60 V, 2.7 A PNP low VCEsat (BISS) transistor Rev. 02 â'" 9 March 2010 Product data , NXP Semiconductors 60 V, 2.7 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2 , (BISS) transistor Table 5. Limiting values â'¦continued In accordance with the Absolute Maximum , , standard footprint. 006aab954 1.5 Ptot (W) (1) 1.0 (2) 0.5 0 â'75 (3) â NXP Semiconductors
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PBSS4041NT
Abstract: (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic , PBSS304PX 60 V, 4.2 A PNP low VCEsat (BISS) transistor Rev. 02 â'" 8 December 2009 Product , mΩ PBSS304PX NXP Semiconductors 60 V, 4.2 A PNP low VCEsat (BISS) transistor 2. Pinning , PBSS304PX NXP Semiconductors 60 V, 4.2 A PNP low VCEsat (BISS) transistor 5. Limiting values Table , . 006aaa556 2.5 Ptot (W) (1) 2.0 (2) 1.5 1.0 (3) 0.5 0 â'75 â'25 25 75 NXP Semiconductors
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PBSS304NX
Abstract: . Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET , V - - ±20 V - - 320 mA - 1 1.6 Ω Per transistor VDS , System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor VDS , (%) Ider (%) 80 80 40 40 0 â'75 â'25 25 75 0 â'75 125 175 NXP Semiconductors
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2N7002PS
Abstract: ) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement , PBSS305PD 100 V, 2 A PNP low VCEsat (BISS) transistor Rev. 02 â'" 8 December 2009 Product data , Film Transistor (TFT) backlight inverter Automotive applications 1.4 Quick reference data Table 1 , 125 mΩ PBSS305PD NXP Semiconductors 100 V, 2 A PNP low VCEsat (BISS) transistor 2 , low VCEsat (BISS) transistor 5. Limiting values Table 5. Limiting values In accordance with the NXP Semiconductors
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PBSS305ND
Abstract: Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench , V Per transistor VDS drain-source voltage Tamb = 25 °C VGS gate-source voltage , transistor VDS drain-source voltage Tamb = 25 °C - 60 V VGS gate-source voltage , . 017aaa001 120 Pder (%) Ider (%) 80 80 40 40 0 â'75 â'25 25 75 0 â'75 , ) DC; Tamb = 25 °C; drain mounting pad 1 cm2 Fig 3. Per transistor: Safe operating area NXP Semiconductors
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BSS138PS
Abstract: Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD , PBHV8118T 180 V, 1 A NPN high-voltage low VCEsat (BISS) transistor Rev. 01 â'" 7 May 2010 , gain (hFE) at high IC AEC-Q101 qualified Small SMD plastic package 1.3 Applications Ì Ì Ì Ì , ) transistor 2. Pinning information Table 2. Pinning Pin Description 1 base 2 emitter , , 1 A NPN high-voltage low VCEsat (BISS) transistor 5. Limiting values Table 5. Limiting values NXP Semiconductors
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Abstract: . Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET , V - - ±20 V - - 350 mA - 1 1.6 Ω Per transistor VDS , Per transistor VDS drain-source voltage VGS gate-source voltage Tamb = 25 °C ID , (%) 80 80 40 40 0 â'75 â'25 25 75 0 â'75 125 175 Tamb (°C) P NXP Semiconductors
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2N7002PV
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