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Part Manufacturer Description Datasheet BUY
TD277S1025RMP GE Critical Power SPD DIN RAIL 277 SINGLE PH 25KA visit GE Critical Power
TD347S1025RMP GE Critical Power SPD DIN RAIL 347 SINGLE PH 25KA visit GE Critical Power
TD277S1050RMP GE Critical Power SPD DIN RAIL 277 SINGLE PH 50KA visit GE Critical Power
TD240S1025RMP GE Critical Power SPD DIN RAIL 240 SINGLE PH 25KA visit GE Critical Power
TD120S1050RMP GE Critical Power SPD DIN RAIL 120 SINGLE PH 50KA visit GE Critical Power
TD120S1025RMP GE Critical Power SPD DIN RAIL 120 SINGLE PH 25KA visit GE Critical Power

Single side polished Si

Catalog Datasheet MFG & Type PDF Document Tags

W4PRE8F-0200

Abstract: W4TRD0R-0200 Layer 4 Layer 5 Layer 0 = No Epitaxy S = Standard SiC Epitaxy T = Thick SiC Epitaxy 0 = Single Side Polish, Si Face Epi Ready C = Single Side Polish, C Face Epi Ready D = Double Side Polish, Si Face Epi Ready G = Double Side Polish, C Face Epi Ready 1 = Single Side Polish, Si Face CMP, Epi Ready 2 = Double Side Polish, Si Face CMP, Epi Ready 0 = Standard Micropipe L = Low Micropipe V = , Single Crystal 4H Single Crystal 6H Hexagonal Hexagonal 3.26 eV 3.03 eV Thermal
Cree
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W6NRD0X-0000

Abstract: W4NRE0X-0D00 Thick SiC Epitaxy 0 = Single Side Polish, Si Face Epi Ready C = Single Side Polish, C Face Epi Ready D = Double Side Polish, Si Face Epi Ready G = Double Side Polish, C Face Epi Ready 1 = CMP Polish, Si Face Epi Ready 2 = Double Side CMP Polish, Si Face Epi Ready 0 = Standard Micropipe S = Select , Devices III-V Nitride Deposition Physical Properties Polytype Single Crystal 4H Single Crystal , micropipes/cm 2 0.015-0.028 C W4SRD0R-0D00 SI on-axis N/A á1E5 R W4SRD8R
Cree
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W6NRD0X-0000 W4NRE0X-0D00 1E-18 W4TRD0R-0D00 Single side polished Si cree Sic

Bosch oxygen sensor

Abstract: multilayer lithography ic fabrication and edge quality for single and double-side polished wafers. Inventory is maintained for 100 , either single side or simultaneous double-side etching proprietary rinsing, cleaning, and drying techniques. Various proprietary fixtures and techniques are used for the electrochemical etching of single , 500 µm. Two other vendors are used to supply polished Contact or proximity printing using positive , KOH, KOH and IPA, and TMAH, with and lithographies on both sides of double-side polished without
Measurement Specialties
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Bosch oxygen sensor multilayer lithography ic fabrication Bosch PSI IC oxygen Sensor bosch wyko 400 polysilicon* lpcvd QS9000 1034AX6

MSI nichrome resistor

Abstract: quartz optical properties , packageless chip mounting, and the consolidation of digital and RF circuitry within a single assembly , integrated on a single substrate. Applications include highperformance, low-noise, and power amplifiers for , digital circuit requirements, PIMIC-HDDI (HighDensity Digital Interconnect) substrates offer single or , in a single design, MIC Technology has created PIMIC-MSI (Mixed Signal Interconnect) to address the , Si or GaAs ICs High-power DC/RF/ Microwave circuits using Silicon or GaAs JCs. High
Vishay Electro-Films
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MSI nichrome resistor quartz optical properties waveguide selective switch NICHROME wire 0.005 mm2 microwave circulators Thin Film Capacitors

NICHROME wire 0.005 mm2

Abstract: gold embrittlement the consolidation of digital and RF circuitry within a single assembly. PIMICTM technology , , capacitors, air-bridges, and filled thermal vias are integrated on a single substrate. Applications include , Interconnect) substrates offer single or doublesided, controlled impedance signal routing. These MCM-D , incorporating features of PIMIC-AI and -HDDI in a single design, EFI Technology has created PIMIC-MSI (Mixed , Applications Low to medium power, DC/RF or Microwave circuits using Si or GaAs ICs Cost-effective material
Vishay Electro-Films
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gold embrittlement nicr-ni temperature AT*T Wireless Services coupler

SHF300

Abstract: SFH300 optic components contained in the kit on the left side of a work space with a flat surface such as a table approximately 60 x 90 cm (2 x 3 feet) in size. (The left side will contain unidentified components; on the right side will be the identified components.) 2. Locate the 3-meter length of 1000 µm core plastic optical fiber and move it to the right side of your work space. 3. Identify , inside diameter of 4.8 mm (3/16 inch). Move it to the right side of your workspace. 1 s 1460
Industrial Fiber Optics
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SHF300 SFH300 IF-E93A if-e93a-blue IF-E91C IF-E91C-blue

induction furnace circuit diagram

Abstract: INCOMING RAW MATERIAL INSPECTION REPORT FOR COLD FORGING Page Blackbody Low Temperature Cavity Optical Fiber Single Crystal Sapphire (Al2O3) Coupler , , OMEGA has grown from a manufacturer of a single productâ'¦a fine gauge thermocoupleâ'¦into being an , best products for your applications. â'¢ On the manufacturing side, our Bridgeport, N.J., vertically
Omega Engineering
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induction furnace circuit diagram INCOMING RAW MATERIAL INSPECTION REPORT FOR COLD FORGING

Cu6Sn5

Abstract: frame solder bonded to a board. The Si chip, which is not shown in Fig. 1, is wire bonded to the other , slice are about 25 m25 m100 nm. Starting from the bottom side of the slice and going upward, we can , samples B. Cross-sectional samples prepared by FIB The cross section polished by FIB is very smooth , between the finish and the Cu. To begin with, we cut a cross section from a leg and polished it , . Such a sample is shown in Fig. 3. The indented surface is cleaner than the mechanically polished
National Semiconductor
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Cu6Sn5

DH13-10

Abstract: F DH13 distributed post deflection acceleration and side contacts for the deflection electrodes. TUBE Ã' RAYONS , side contacts for the deflection electrodes. TUBE Ã' RAYONS CATHODIQUES à sensibilité élevée et à , occupance or single stroke phenomena, a beam trap is provided on the D2 plates. When a positive voltage of , Elektrische Achse der Ablenkelektroden ') Flat and polished surface; surface plate et polie; polierter , occupance or single stroke phenomena, a beam trap is provided on the D2 plates. When a positive voltage of
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DH13-10 F DH13 S261A cathode ray DN13-10

13B1

Abstract: IMT-2000 pursued them too far. They polished their production technology, and achieved high-density multi-pin , side, applied the BGA concept to CSP by reducing the terminal pitch to 1.0 mm or less, thereby , (SI) project was started by the New Energy and Industrial Technology Development Organization (NEDO , Sharp, we stacked these two IC chips and succeeded (in 1998) in incorporating them into a single CSP , barriers. It is already impossible to make single chips in a timely fashion, and at appropriate cost
Sharp
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13B1 IMT-2000 csp defects PCB design for very fine pitch csp package plasma display address electrode driving mitsubishi gaAs 1998

OS520E

Abstract: -1 OS523-2 OS523-3 OS524 Laser Sight Module Laser Sight Module Model No. Single Dot Circle LS , Thermometer Model No. Laser Sight Module Model No. Single Dot Circle OS520, OS520E LS-120 LS , (on the bottom) Lock/ Unlock Lever OF F Figure 3-1. Rear View (Left Side) er ng Da , SI LA MA CO Mounting Screws Danger & Certification Label 3-2 Figure 3-2. Rear View (Right Side) Power Contacts Figure 3-3. Front View Laser Sight Module 3 3.3
Newport Electronics
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ISO9002 OS521 OS522 OS523 1-800-TC-OMEGASM 1-800-622-BESTSM

REFLECTIVE SENSOR OPB

Abstract: Sensor OPB Direction, Relative Position and Speed Vcc Vcc O O ^ r CHANNEL 6 , Discussion A reflective assembly generally consists of a single emitter and sensor in the same housing. This , only one side. However, this can lead to a wide variety of design variables involving mounting , line. The angular mountings of the discretes are ideal for detecting the presence of a polished or
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REFLECTIVE SENSOR OPB Sensor OPB best infrared sensor for counting REFLECTIVE SENSOR OPB 8 OPB700 OPB704 OPB70S 0PB711

Sensors PSD

Abstract: Special-purpose modules 12-1 Flame eyes 12-2 Sunlight sensors 12-3 Driver circuit for Si photodiode array 1 , integrating a Si or InGaAs photodiode and current-to-voltage conversion amplifier. A dedicated controller is , modules are high-precision position detectors integrating a PSD (or 4-segment Si photodiode) and , conditioners and the like, and Si photodiode array driver circuit. MPPC modules Photosensor amplifiers , No Connecting and driving multiple mini-spectrometers from a single PC Yes Yes No No
Hamamatsu
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Sensors PSD C9004 KACCC0426EB
Abstract: the consolidation of digital and RF circuitry within a single assembly. Advanced thin film , ) Low- to medium-power DC/microwave circuits using Si, GaAs, or GaN ICs; Edge-coupled filters and , ) High-power DC/microwave circuits using Si, GaAs, or GaN ICs Optimal CTE match with silicon devices Beryllia (BeO) High-power DC/microwave circuits using Si, GaAs, or GaN ICs; High-power terminations , grades: as-fired, lapped, and polished. The surface quality of the ceramic substrate will influence Vishay Intertechnology
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VMN-PL0456-1207

Mil-Std-883 Wire Bond Pull Method 2011

Abstract: , low-power, CMOS process _ _ Single +5V +10% power supply Easy memory expansion with CE and OE options All , single +5V power supply and all inputs and outputs are fully TTL compatible. The device is specified at , thickness with a titanium nitride barrier metal. · Metalization composition is 98.5% Al, 1.0% Si and 0.5% Cu , The backside wafer surface is polished bare silicon. · Metalization thickness is > 9K angstroms for , dimensions to a maxi mum tolerance of ±1 mil (±0.5 mil on each side) of both length and width, as measured
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Mil-Std-883 Wire Bond Pull Method 2011 MT5C2568 MT5C2568XDM2-25 MILSTD-883

RIFOCS 557B

Abstract: 253B rifocs SHIELDED TWISTED PAIR required epoxy and their ends needed to be polished. Largecore polymer optical , transistor and a single resistor in series with the LED. Because of the simplicity of the drive circuit , connector end may be cut off. For better light coupling the fiber end must be polished by using 600 , dramatically. No longer are many single twisted-paired lines from sensors and actuators bundled into one , housing for an electrical-optical converter. One side of the * DTE DTE TWISTED PAIR R
Hewlett-Packard
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HFBR-0508 HFBR-2528 RIFOCS 557B 253B rifocs 18xta HFBR-2528 applications philips LED GaAsP SN75451 18XTA HFBR-4597 HFBR-4584 HFBR-1527/8

block diagram for optical fiber receiver

Abstract: circuit diagram of rc transmitter and receiver polished. Largecore polymer optical fiber [POF] and the new crimp and cleave technology for the Versatile , transistor and a single resistor in series with the LED. Because of the simplicity of the drive circuit , from the connector end may be cut off. For better light coupling the fiber end must be polished by , equipment has changed dramatically. No longer are many single twisted-paired lines from sensors and , to be assembled into an adapter housing for an electrical-optical converter. One side of the
Agilent Technologies
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block diagram for optical fiber receiver circuit diagram of rc transmitter and receiver cmos ic 4584 light following robot diagram abstract on mini ups system circuit design CMOS 4584

HFBR-2528Z

Abstract: avago application bulletin 73 because fibers required epoxy and their ends needed to be polished. Large-core polymer optical fiber [POF , modulated using only a switching transistor and a single driving gate. Resistor R2 sets the drive current , coupling the fiber end must be polished by using 600-grit abrasive paper. See the detailed connecting , many single twisted-paired lines from sensors and actuators bundled into one huge and heavy cable and , adapter housing for an electrical-optical converter. One side of the housing holds the electrical
Avago Technologies
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HFBR-2528Z AV02-0784EN avago application bulletin 73 HFBR-1528Z photodyne optical fiber free book HFBR-1527Z/8Z 5963-6756E

Mil-Std-883 Wire Bond Pull Method 2011

Abstract: T5C6408 double-metal process · Single +5V ±10% power supply · Easy memory expansion with CE1, CE2 and OE options · All , single +5V power supply and all inputs and outputs are fully TTL compatible. The device is specified at , titanium nitride barrier metal. · Metalization composition is 98.5% Al, 1.0% Si and 0.5% Cu. · Topside , wafer surface is polished bare silicon. · Metalization thickness is > 9K angstroms for the top level of , tolerance of ±1 mil (±0.5 mil on each side) of both length and width, as measured from the vertical cut. For
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T5C6408 MT5C6408XDM2-2S C1992

3SB140

Abstract: internally driven to a negative voltage. The MT5C1008 device operates from a single +5V power supply and all , . Metalization composition is 98.5% Al, 1.0% Si and 0.5% Cu with a titanium nitride barrier metal. Topside , The backside wafer surface is polished bare silicon. · Metalization thickness is > 9K angstroms for , through. Micron holds die dimensions to a maxi mum tolerance of ±1 mil (±0.5 mil on each side) of both , smaller on each side due to the sawing operation. Example: a 544 x 241 die is approximately 542.5 x 239.5
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3SB140 MT5C1008XDM2-25 MIL-STD-883 MT5C1008DIE
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