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Part Manufacturer Description Datasheet BUY
LT1158IN#TRPBF Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LT1161CS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SO-20, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LTC4444-5IMS8E#TRPBF Linear Technology IC 1.75 A HALF BRDG BASED MOSFET DRIVER, PDSO8, LEAD FREE, PLASTIC, MSOP-8, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LT1158CN#TR Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LT1158IS Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, PLASTIC, SOL-16, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LT1158CN#TRPBF Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver visit Linear Technology - Now Part of Analog Devices

Simple test MOSFET Procedures

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: DRF12XX series of devices. The Hybrid consists of a MOSFET Driver and Power MOSFET. The control signal is , internally applied to the gate of the Power MOSFET. The logic diagram for the hybrid is shown in Table 1 , (pin 3) Invert/Non-invert IN (pin 4) Control MOSFET Function High High On , choice. It is initially configured as shown in Figure 2 allowing the user to evaluate the simple , Connected to MOSFET Source Table 2 Table 2 shows Evaluation board inputs and outputs and the highly Microsemi
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P5100 DRF12

choke vk200

Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET . . . designed for broadband commercial and military applications at , N-CHANNEL BROADBAND RF POWER MOSFET · Typical Performance at 175 MHz, 50 V: Output Power - 150 W Gain - , ) !MD(d9-13) _ - NOTE: 1. To MIL-STD-1311 Version A, Test Method 2204B, Two Tone, Reference Each , . Copper Clad, 2 Sides, er = 5 Figure 1.30 MHz Test Circuit MOTOROLA RF DEVICE DATA MRF141 2-139
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choke vk200

supercap

Abstract: extra power dissipation. For many applications, SAB MOSFET automatic charge balancing offers a simple , MOSFET in balancing supercaps is basically simple. It is based on the natural threshold characteristics , /ALD910024/ALD910025/ ALD910026/ALD910027/ALD910028 DUAL SUPERCAPACITOR AUTO BALANCING (SABâ"¢) MOSFET , connected two, three or four in series can be balanced with an ALD8100xx quad package. â'¢ Simple and , MOSFET provides regulation of the voltage across a supercap cell by increasing its drain current
Advanced Linear Devices
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supercap ALD910023/ALD910024/ALD910025/ ALD8100 ALD9100 ALD910023 ALD910024 ALD910025

ALD810026SCL

Abstract: extra power dissipation. For many applications, SAB MOSFET automatic charge balancing offers a simple , the Supercap Auto Balancing MOSFET in balancing supercaps is basically simple. It is based on the , /ALD810024/ALD810025/ ALD810026/ALD810027/ALD810028 QUAD SUPERCAPACITOR AUTO BALANCING (SABâ"¢) MOSFET , connected two, three or four in series can be balanced with an ALD8100xx quad package. â'¢ Simple and , SAB MOSFET provides regulation of the voltage across a supercap cell by increasing its drain current
Advanced Linear Devices
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ALD810026SCL ALD810023/ALD810024/ALD810025/ ALD810023 ALD810024 ALD810025 ALD810026 ALD810027

MRF151G

Abstract: BH Rf transistor MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at , , 50 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFET · · · MAXIMUM RATINGS Rating Drain-Source , details of T1 and T2. Test Circuit MRF151G 4.2-137 TYPICAL CHARACTERISTICS C, CAPACITANCE (pF , 4.2-139 RF POWER MOSFET CONSIDERATIONS MOSFET CAPACITANCES The physical structure of a MOSFET results
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BH Rf transistor mrf151g 300 MRF151G hf amplifier

application MOSFET transmitters fm

Abstract: TOROIDS Design Considerations MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at , , 28 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFET · · · MAXIMUM RATINGS Rating Drain-Source , Capacitors are ATC Type 100 or Equivalent. Figure 1.175 MHz Test Circuit TYPICAL CHARACTERISTICS , MOSFET CONSIDERATIONS MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors
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application MOSFET transmitters fm TOROIDS Design Considerations mrf141g MRF141G

MRF151G

Abstract: MRF151G hf amplifier MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF151G RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET . . . designed for broadband commercial and military , Reliability 300 W, 50 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFET · · · if G oGO-o S (FUNGE , output transformer. See Figure 6 for construction details of T1 and T2. Figure 1.175 MHz Test Circuit , Output Impedance MOTOROLA RF DEVICE DATA MRF151G 2-167 RF POWER MOSFET CONSIDERATIONS MOSFET
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RF TOROIDS Design Considerations testing of mosfet gain control rf amplifier circuit mrf151g

transistor fet N-Channel RF Amplifier

Abstract: RF TOROIDS Design Considerations MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at , Reliability MRF141G 300 W, 28 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFET · · · MAXIMUM RATINGS , Equivalent. Figure 1.175 MHz Test Circuit TYPICAL CHARACTERISTICS I q , DRAIN CURRENT (AMPS , MOTOROLA RF DEVICE DATA MRF141G 2-239 RF POWER MOSFET CONSIDERATIONS MOSFET CAPACITANCES The physical
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transistor fet N-Channel RF Amplifier arco 406

MRF151G

Abstract: rf amplifier circuit mrf151g MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at , Reliability 300 W, 50 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFET · · · MAXIMUM RATINGS Rating , details of T1 and T2. Figure 1.175 MHz Test Circuit MRF151G 2-258 M O T O R O L A R F D E V IC E DATA , 2-260 M O T O R O L A R F D E V IC E DATA RF POWER MOSFET CONSIDERATIONS MOSFET CAPACITANCES The
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DEIC-515

Abstract: DEIC515 DEIC515 15 Ampere Low-Side Ultrafast RF MOSFET Driver Features Description · Built using , DEIC515 15 Ampere Low-Side Ultrafast RF MOSFET Driver Absolute Maximum Ratings Parameter Value , measurements with respect to DGND. DEIC515 configured as described in Test Conditions. Symbol Parameter VIH , input voltage Low input voltage Input voltage range IIN VOH VOL ROH Test Conditions 45 , MOSFET Driver Lead Description - DEIC515 SYMBOL VCC VCCIN IN OUT PGND INGND FUNCTION
IXYS
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DEIC-515 transformer 12V Ampere output mosfet HF amplifier 1 ampere 15v transformer trifilar

74397

Abstract: steinel By Kandarp Pandya INTRODUCTION ® PolarPAK , a new-generation Vishay Siliconix power MOSFET , soldering iron is one of the most detrimental mistakes, resulting in catastrophic damage to the MOSFET. This , soldering procedures closely matching the production reflow profile, while in turn insuring a reliable , the electrical functionality of the part is verified after both soldering and re-works procedures , is connected to pins 1, 5, 6, and 10 Figure 1d. Pin Configuration (2) Test PCB used for this
Vishay Siliconix
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AN828 74397 steinel HG3002LCD steinel "air gun" APR-5000 reflow profile E802DF APR5000

MOSFET TEST SIMPLE Procedures

Abstract: Simple test MOSFET Procedures MRF175LU The RF MOSFET Line 100W, 400MHz, 28V M/A-COM Products Released - Rev. 07.07 , samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve , information contained herein without notice. MRF175LU The RF MOSFET Line 100W, 400MHz, 28V M/A-COM , been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc , . changes to the product(s) or information contained herein without notice. MRF175LU The RF MOSFET Line
M/A-COM
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MOSFET TEST SIMPLE Procedures Simple test MOSFET Procedures hf amplifier 100w mosfet vhf power amplifier AN211A 100W zener diode 400MH MRF175L

AN799 Matching MOSFET Drivers to MOSFETs

Abstract: an799 AN799 Matching MOSFET Drivers to MOSFETs INTRODUCTION V+ Microchip offers many sizes of MOSFET drivers. This allows the designer to best match the switching performance of the driver/ MOSFET to the application. TC4424 MOSFET DIE SIZES Unlike bipolar transistors in which die size is , simple numeric indicators 0 through 6. Thus, a Hex 0 is the smallest die, while a Hex 6 is the largest in standard MOSFET offerings. Some other manufacturers (IXYS) are offering sizes as large as Hex 9
Microchip Technology
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AN799 Matching MOSFET Drivers to MOSFETs an799 microchip IRF450A TC4424 motor driver Matching MOSFET Drivers to MOSFETs TC4431 application TC426-29 TC1410-13 TC1426-28 TC4403-05 TC4420-29 TC4431/32

IRF450 application

Abstract: Matching MOSFET Drivers to MOSFETs AN30 Matching MOSFET Drivers to MOSFETs INTRODUCTION V+ Microchip offers many sizes of MOSFET drivers. This allows the designer to best match the switching performance of the driver/ MOSFET to the application. MOSFET DIE SIZES TC4424 Input Unlike bipolar transistors in which die , , they have used simple numeric indicators 0 through 6. Thus, a Hex 0 is the smallest die, while a Hex 6 is the largest in standard MOSFET offerings. Some other manufacturers (IXYS) are offering sizes as
Microchip Technology
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IRF450 application mosfet IRF450 TC4420 die matching mosfet TC170 TC426 TC446 DS00799A

9974 mosfet

Abstract: on ic 4148 details voltage-mode controller with many functions needed for high-performance processors. Figure 1 shows a simple , two MOSFET drivers for use in synchronous-rectified buck converters. A more complete description of , to higher MOSFET switching losses and is displayed in Figure 2. OCSET SS The ISL6430EVAL1 is , voltages. Simple resistor value changes allow for outputs as low as 1.3V. The schematic and , are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or
Intersil
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ISL6430 9974 mosfet on ic 4148 details 9974 dc-dc converter 12v to 5v 3a ic HIP6005 HIP6007 AN9974 ISO9000 CH-1009
Abstract: applications. The ISL6420BMAEP provides simple, single feedback loop, voltage mode control with fast transient , from overcurrent conditions is provided by monitoring the rDS(ON) of the upper MOSFET to inhibit the , Fabrication Site and One Assembly/Test Site · Full Homogeneous Lot Processing in Wafer Fab · No Combination of Wafer Fabrication Lots in Assembly · Full Traceability Through Assembly and Test by Date/Trace Code , Output Can Sink or Source Current · Lossless, Programmable Overcurrent Protection - Uses Upper MOSFET Intersil
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ISL6420BM FN6574

ISL6420BMAEP

Abstract: TB347 applications. The ISL6420BMAEP provides simple, single feedback loop, voltage mode control with fast , monitoring the rDS(ON) of the upper MOSFET to inhibit the PWM operation appropriately. This approach , from -55°C to +125°C · Controlled Baseline with One Wafer Fabrication Site and One Assembly/Test Site , Assembly · Full Traceability Through Assembly and Test by Date/Trace Code Assignment · Enhanced Process , Output Can Sink or Source Current · Lossless, Programmable Overcurrent Protection - Uses Upper MOSFET
Intersil
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TB347

27.12Mhz

Abstract: 400w class d schematic . Introduction This application note discusses the design procedures and test results for a 27.12MHz, 400W min , /MOSFET Hybrid Overview The DRF1200/Class-E 27M Reference design is available to expedite the evaluation of the DRF1200 Driver MOSFET hybrid. This Application Note or Reference Design Kit does not , DRF1200 Driver/MOSFET was selected. The DRF1200 can generate over 400W of operating output power and consists of a MOSFET driver, high power MOSFET and internal bypass capacitors in an air cavity flangeless
Microsemi
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27.12Mhz 400w class d schematic DRF1200/C DRF1200/CLASS-E PRF-1150 1813-B/04
Abstract: control. Based on the proven technology of our BASIC Stamp 1 microcontroller, this product is both simple to use and incredibly versatile in its capabilities. Features ï' Simple to program with PBASIC ï' Two programmable I/O ports ï' Five high power outputs (MOSFET) ï' Adjustable voltage sensor , /2013 Page 1 of 8 Description The Light Commander has five high-power MOSFET outputs available to , have a push button switch available that can be programmed for anything from simple On/Off functions Parallax
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AN211-A

Abstract: RF MOSFET CLASS AB MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at , POWER MOSFET · · · · CASE 2 11 -1 t, STYLE 2 MAXIMUM RATINGS Rating Drain-Source Voltage , -7 5 - dB - - NOTE: 1. To MIL-STD-1311 Version A, Test Method 2204B, Two Tone, Reference , Sides, E r = 5 Figure 1. 30 MHz Test Circuit (Class AB) MOTOROLA RF DEVICE DATA MRF141 2-231
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AN211-A RF MOSFET CLASS AB motorola bipolar transistor data manual
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