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ISL28210FBZ-T7 Intersil Corporation Precision Low Noise JFET Operational Amplifiers; SOIC8; Temp Range: -40° to 125°C visit Intersil Buy
ISL28210FBZ Intersil Corporation Precision Low Noise JFET Operational Amplifiers; SOIC8; Temp Range: -40° to 125°C visit Intersil Buy
ISL28210FBZ-T7A Intersil Corporation Precision Low Noise JFET Operational Amplifiers; SOIC8; Temp Range: -40° to 125°C visit Intersil Buy
ISL28210FBZ-T13 Intersil Corporation Precision Low Noise JFET Operational Amplifiers; SOIC8; Temp Range: -40° to 125°C visit Intersil Buy
ISL28110FBZ-T13 Intersil Corporation Precision Low Noise JFET Operational Amplifiers; SOIC8; Temp Range: -40° to 125°C visit Intersil Buy

Siliconix JFET

Catalog Datasheet MFG & Type PDF Document Tags

Siliconix JFET

Abstract: VCR7N VCR2N/4N/7N Vishay Siliconix JFET Voltage-Controlled Resistors PRODUCT SUMMARY Part Number , Controlled Oscillator D AGC DESCRIPTION The VCR2N/4N/7N JFET voltage controlled resistors have an ac , -Jun-04 www.vishay.com 1 VCR2N/4N/7N Vishay Siliconix ABSOLUTE MAXIMUM RATINGSa Gate-Source, Gate-Drain Voltage , -41225-Rev. F, 28-Jun-04 VCR2N/4N/7N Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE , Number: 70293 S-41225-Rev. F, 28-Jun-04 www.vishay.com 3 Vishay Siliconix
Vishay Siliconix
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Siliconix JFET

Abstract: AN105 VCR2N/4N/7N Vishay Siliconix JFET Voltage-Controlled Resistors PRODUCT SUMMARY Part Number , Controlled Oscillator D AGC DESCRIPTION The VCR2N/4N/7N JFET voltage controlled resistors have an ac , -Jun-01 www.vishay.com 6-1 VCR2N/4N/7N Vishay Siliconix ABSOLUTE MAXIMUM RATINGSa Gate-Source, Gate-Drain , -04027-Rev. E, 04-Jun-01 VCR2N/4N/7N Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE , Number: 70293 S-04027-Rev. E, 04-Jun-01 www.vishay.com 6-3 Vishay Siliconix
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9952

Abstract: Siliconix JFET VCR2N/4N/7N Siliconix JFET VoltageControlled Resistors Product Summary Part Number VGS(off) Max (V) V(BR)GSS Min (V) rDS(on) Max (W) VCR2N -7 -25 60 VCR4N -7 -25 , JFET voltage controlled resistors have an ac drainsource resistance that is controlled by a dc bias , otherwise noted. b. Derate 2 mW/_C above 25_C. 1 VCR2N/4N/7N Siliconix Specificationsa Limits , 0.4 0.5 VDS - DrainSource Voltage (V) P-37406-Rev. C (07/25/94) VCR2N/4N/7N Siliconix
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Siliconix JFET

Abstract: "Siliconix" "JFET" VCR2N/4N/7N Vishay Siliconix JFET Voltage-Controlled Resistors PRODUCT SUMMARY Part Number , Controlled Oscillator D AGC DESCRIPTION The VCR2N/4N/7N JFET voltage controlled resistors have an ac , -Jun-04 www.vishay.com 1 VCR2N/4N/7N Vishay Siliconix ABSOLUTE MAXIMUM RATINGSa Gate-Source, Gate-Drain Voltage , -41225-Rev. F, 28-Jun-04 VCR2N/4N/7N Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE , Revision: 08-Apr-05 www.vishay.com 1 Vishay Siliconix
Vishay Siliconix
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VCR2N

Abstract: jfet transistor for VCR VCR2N/4N/7N Vishay Siliconix JFET Voltage-Controlled Resistors PRODUCT SUMMARY Part Number , Controlled Oscillator D AGC DESCRIPTION The VCR2N/4N/7N JFET voltage controlled resistors have an ac , -Jun-04 www.vishay.com 1 VCR2N/4N/7N Vishay Siliconix ABSOLUTE MAXIMUM RATINGSa Gate-Source, Gate-Drain Voltage , -41225-Rev. F, 28-Jun-04 VCR2N/4N/7N Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE , Revision: 18-Jul-08 www.vishay.com 1 Vishay Siliconix
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transistor FN 1016

Abstract: siliconix fet Siliconix incorporated 6-18 The following are representative ej»j, ¡n curves for Siliconix J-FET products , s Siliconix APPLICATION NOTE Audio-Frequency Noise Characteristics of Junction FETs INTRODUCTION , Hz. Therefore noise power due to Rq is ex2 _ 4kTRGB = 4kTB (2) © 1979 Siliconix incorporated 6-13 , followed in the © 1979 Siliconix incorporated 6-14 design of the Siliconix 2N4867A FET, and noise , © 1979 Siliconix incorporated 6-15 The curves in Figure 5 illustrate changes in eN as the operating drain
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transistor FN 1016 siliconix fet Siliconix FET Design Catalog siliconix FET DESIGN Siliconix JFET Siliconix "fet"

Siliconix JFET

Abstract: Siliconix AN102 AN102 Siliconix JFET Biasing Techniques Introduction Self bias (also called source bias , where: , g fs RD AV + 1 ) R g , gos + JFET output conductance D os (1) In most applications , moves the load line horizontally. 1 AN102 Siliconix The transfer characteristic is a plot , from the vertical. The capacitor drop subtracts from eg. (08/11/94) AN102 Siliconix SelfBias , reasonably flat load line without sacrificing dynamic range. 3 AN102 Siliconix Biasing for Device
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SST5484 2N5484 2N4339 2N4338 Siliconix AN102 jfet biasing an102 siliconix AN-102 matched pair JFET SST/J201 SST/J202

siliconix fet

Abstract: Transistor E112 FET N-Channel 5-25 2N5908 D N JFET 2N5908 3-41 5-29 © 1979 Siliconix incorporated 2-4 FET Cross Reference and Index , 2094M N JFET 2N3686 2-5 © 1979 Siliconix incorporated Cross Reference and Index (cont'd.) S Siliconix , -18 MPF970 P JFET J174 KE5105 N JFET K304-18 MPF971 P JFET J176 - © 1979 Siliconix , TD5911 D N JFET 2N5911 © 1979 Siliconix incorporated MO FET Cross Reference and Index , 2N5432 U424 D N JFET U424 3-64 5-23 © 1979 Siliconix incorporated 2-11 FET Cross Reference
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Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 jfet bfw10 terminals JFET BFW10 SPECIFICATIONS E112 jfet 4856a mosfet 867-C 1130669-CSEL-BR J-23548 K24123 NZ3766 53-C-03

e304 fet

Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 infringement. Warning Regarding Life Support Applications Siliconix products are not sold for applications , Siliconix. Such agreement will require the equipment manufacturer either to contract for additional reliability testing of the Siliconix parts and/or to commit to undertake such testing as a part of its manufacturing process. In addition, such manufacturer must agree to indemnify and hold Siliconix harmless from any claims arising out of the use of the Siliconix parts in life support equipment. Stresses
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e304 fet e420 dual jfet BFW10 JFET jfet e300 JFET TIS88 2N5258 equivalent K28742 44449SILXHX

Mohan power electronics converters applications a

Abstract: mosfet VISHAY SILICONIX Power MOSFETs Application Note 605 MOSFET MOSFET Jess Brown Guy , Si4420 0.011 0.010 0.009 0.008 0.005 0.006 0.007 10 15 20 25 30 35 40 Gate Charge (nC) · Siliconix VGS = 4.5 V Si4842 Si4430 Si4442 Si4888 Si4872 Si4874 1 - Vishay Siliconix N- 30V SO-8 MOSFET 1 , " BHFFOM(1) Ciss / " " NHFFOM(2) Coss / 2 MOSFET Vishay Siliconix 30V SO-8 N , Application Note 605 Vishay Siliconix MOSFET MOSFET MOSFET MOSFET MOSFET 1 Vishay Siliconix
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Mohan power electronics converters applications a mosfet Siliconix SMPS MOSFET Siliconix JFET application note n channel power trench MOSFET 4888DY 4842DY

FET J202

Abstract: siliconix fet data book ) Figure 9. JFET Source Biased Drain-Current vs. Source Resistance 4 Siliconix 10-Mar-97 AN103 , . Cascade FET Current Source Updates to this app note may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70596. Siliconix 10-Mar-97 1 AN103 JFET may have a typical goss = 4 mS at VDS = 20 V and VGS = 0. At VDS ­VGS(off) = 2 V, goss 100 mS , goss. The Siliconix 2N4340, J202, and SST202 exhibit typical goss = 2 mS at VDS = 20 V. These devices
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2N4117A 2N4393 2N4392 FET J202 siliconix fet data book J113 equivalent CR180 datasheet j201 jfet J201 equivalent PN4117A SST4117 PN4118A SST4118 2N4118A

2N5088 equivalent

Abstract: siliconix FET AUDIO AMPLIFIER design-oriented and can vary from 5 kHz to 50 kHz. Siliconix 10-Mar-97 AN106 Defining the JFET Noise , "analog world." Common JFET amplifier applications Siliconix 10-Mar-97 Contemporary JFETs have noise , impedances as low as 5 kW . With higher source impedances, common in sensitive transducers, the JFET amplifiers exhibit dramatically lower noise figures. A close examination of bipolar and JFET specification , Source impedance effect on circuit NF. Defining the JFET Noise Figure Figure 1 represents the basic
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2N5088 equivalent siliconix FET AUDIO AMPLIFIER 2N5088 SIMILAR transistor 2n5088 equivalent Siliconix AN106 Siliconix "low noise jfet" ST201/ SST204 PN4393 SST4393 U401/U404/ SST404/

2N4393

Abstract: FET J202 with temperature. Siliconix 07-Jul-94 All industry JFET part types exhibit a significant , Siliconix 07-Jul-94 AN103 Table 1: Source Biasing Device Recommendations Choosing the Correct JFET , . JFET Source Biased Drain-Current vs. Source Resistance Siliconix 07-Jul-94 5 Temic , Siliconix 07-Jul-94 or RS + V GS(off) ID 1­ ID I DSS RS ­ + VDD (2) Figure 2. Cascade FET Current Source 1 AN103 JFET may have a typical goss = 4 mS at VDS = 20 V and
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j112 fet J112 jfet transistor j201 FET J506 SSTJ201 2N4339 Siliconix PN4119A SST4119 2N4119A SST201 SST113 SST112

N CHANNEL jfet Low Noise Audio Amplifier

Abstract: jfet n channel ultra low noise design-oriented and can vary from 5 kHz to 50 kHz. Siliconix 10-Mar-97 AN106 Defining the JFET Noise , impedances as low as 5 kW . With higher source impedances, common in sensitive transducers, the JFET amplifiers exhibit dramatically lower noise figures. A close examination of bipolar and JFET specification , Source impedance effect on circuit NF. Defining the JFET Noise Figure Figure 1 represents the basic circuit identifying the equivalent noise sources en and in found in a JFET (or bipolar transistor). The
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N CHANNEL jfet Low Noise Audio Amplifier jfet n channel ultra low noise Siliconix JFETs Dual Siliconix JFET Dual transistor equivalent table chart 2n930 equivalent

FET J202

Abstract: transistor j201 Source Updates to this app note may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70596. Siliconix 10-Mar-97 1 AN103 JFET may have a , Recommendations Choosing the Correct JFET for Source Biasing Each of the Siliconix device data sheets include , Siliconix 2N4340, J202, and SST202 exhibit typical goss = 2 mS at VDS = 20 V. These devices in the circuit , greater than 2 MW at 0.2 mA. Other Siliconix part types such as the 2N4392, J112, and SST112 can provide
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high impedance current sources -rs 2n Siliconix FET Transistor J304 Siliconix J505 j511 transistor j511 SST/J112 SST/J113

siliconix - j201

Abstract: j201 jfet ) AN103 Siliconix Choosing the Correct JFET for Source Biasing Table 1: Source Biasing Device , AN103 Siliconix The FET ConstantCurrent Source/Limiter Introduction The combination of , (2) RL RS - VDD + Figure 2. Cascade FET Current Source 1 AN103 Siliconix , goss. The Siliconix 2N4340, J202, and SST202 exhibit typical goss = 2 mS at VDS = 20 V . These , internal impedance greater than 2 MW at 0.2 mA. Other Siliconix part types such as the 2N4392, J112, and
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siliconix - j201 j201 jfet jfet cascade 2N4341 J112 J202

P-Channel Depletion Mosfets

Abstract: shockley diode junction formed along the channel. Implicit in this description is the fundamental difference between JFET and bipolar devices: when the JFET junction is reverse-biased the gate current is practically zero, whereas the base current of the bipolar transistor is always some value greater than zero. The JFET is a , Figure 1. FET Family Tree Updates to this app note may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70594. Siliconix 10-Mar-97 1 AN101
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P-Channel Depletion Mosfets shockley diode P-Channel Depletion Mode FET shockley diode application shockley diode datasheet n channel depletion MOSFET

transistor 2n5088 equivalent

Abstract: transistor fn 1016 . (07/26/94) AN106 Siliconix Defining the JFET Noise Figure A noise factor (F) is a figure of , AN106 Siliconix LowNoise JFETs Superior Performance to Bipolars Introduction D , transducers, the JFET amplifiers exhibit dramatically lower noise figures. A close examination of bipolar and JFET specification and typical curves, along with circuit breadboarding, will startle most designers. Many currently available JFET devices offer ultralow noise performance over a wide range of
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JFETs Junction FETs JFET APPLICATIONS 2N930 siliconix jfets 2n5088 transistor

P-Channel Depletion Mosfets

Abstract: 0g190 SILICONIX INC Uül 89/190/19T 33E D Ã"E54735 0Qlb3ö2 S High-Speed Drivers with Dual SPDT JFET , . JFET transistors and a bipolar driver (TTL compatible) to achieve fast and accurate swltch performance , St IN, V-Vr 5-34 DS XXIC 10530 9003 - SILICONIX INC _ll!conix incorporated 33E D â  Ã , 300 mA 5 DS XXIC 10530 9003 - 5-35 SILICONIX INC 33E D â  6554735 001b304 «SIX DG189/190/191 , Room Hot 0.06 t 100 5 100 5-36 DS XXIC 10530 9003 - SILICONIX INC 33E D â  Ã25M735 0Dlb3Ã"S Q
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0g190 DG189BP JFET dg190 CMJB P-Channel Depletion DG189AR DG189-191 DG180 DG189 DG190 DG19I DG190/191

P-Channel Depletion Mode FET

Abstract: P-Channel Depletion Mosfets n-channel JFET with the gate short-circuited to the source. The 12-2 Siliconix 10-Mar-97 AN101 In , junction formed along the channel. Implicit in this description is the fundamental difference between JFET and bipolar devices: when the JFET junction is reverse-biased the gate current is practically zero, whereas the base current of the bipolar transistor is always some value greater than zero. The JFET is a , Figure 1. FET Family Tree Updates to this app note may be obtained via facsimile by calling Siliconix
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P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion mosFET N-Channel JFET FETs list of n channel fet p channel depletion mosfet shockley
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