NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: MITSUBISHI SILICON TRANSISTOR "MITSUBISHI ELECTRIC CORP. RF POWER TRANSISTOR'. 2SC2312 2SC2312 27MHz,12V, 17W . NPN Epitaxial Planar Type â- â- GENERAL DISCRIPTION MITSUBISHI 2SC2312 2SC2312 is a silicon NPN epitaxial planar type transistor specifically designed for linear amplifiers operating in HF. band. • FEATURES , transceiver sets. TRANSISTOR SPEC. SHEET DRAW APPROVED Y, A7; feT. ïC'/^^urk-t -7->-~) Type 2SC2312 2SC2312 Application RF - Power Amplification Structure Silicon NPN Epitaxial Planar Type Outline See Fig. 1 V ... | OCR Scan |
2 pages, |
transistor A7 FET Transistor Structure mitsubishi vcb RF POWER TRANSISTOR A7 transistor 27mhz rf ic A7 NPN EPITAXIAL 27mhz transistor 2SC2312 2SC2312 abstract |
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| Abstract: 2 2SD788 2SD788 Silicon NPN epitaxial planar type S For low-frequency power amplification Unit: mm For stroboscope 5.0�2 4.0�2 C 5.1�2 B Features 0.7�2 A � Low collector-emitter saturation voltage VCE(sat) � Satisfactory operation performances at high efficiency with the lowvoltage power supply. E G D J Absolute Maximum Ratings Ta = 25癈 N 12.9�5 0.7�1 K , 2SD788 2SD788 Silicon NPN epitaxial planar type Typical Output Characteristics 100 1.2 0.3 ... | Original |
2 pages, |
2SD788 datasheet abstract |
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| Abstract: Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SD2185 2SD2185 Features Low collector-emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 3 A ... | Original |
1 pages, |
Silicon NPN Epitaxial Planar Type 2SD2185 2SD2185 abstract |
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| Abstract: Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SD2210 2SD2210 Features Low collector-emitter saturation voltage VCE(sat) Low on resistance ron. High forward current transfer ratio hFE. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 25 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 12 V , www.kexin.com.cn 1 Transistors SMD Type 2SD2210 2SD2210 Electrical Characteristics Ta = 25 Parameter Symbol ... | Original |
2 pages, |
2SD2210 2SD2210 abstract |
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| Abstract: Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SC2778 2SC2778 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Mini type package, allowing downsizing of the equipment and automatic 1 insertion through the tape packing and the magazine packing. 0.55 Optimum for RF amplification, oscillation, mixing, and IF of FM/AM radios. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base ... | Original |
1 pages, |
2SC2778 Silicon NPN Epitaxial Planar Type 10,7mhz smd diode marking KC 2SC2778 abstract |
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| Abstract: Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SD875 2SD875 Features Large collector power dissipation PC. High collector-emitter voltage (Base open) VCEO. Mini power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO ... | Original |
1 pages, |
Silicon NPN Epitaxial Planar Type 2SD875 2SD875 abstract |
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| Abstract: Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SD2457 2SD2457 Features High collector-emitter voltage (Base open) VCEO. Low collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 5 V ... | Original |
1 pages, |
2SD2457 1y smd 1Y MARKING Silicon NPN Epitaxial Planar Type 2SD2457 abstract |
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| Abstract: Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SD2357 2SD2357 Features Low collector-emitter saturation voltage VCE(sat). Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 10 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO ... | Original |
1 pages, |
Silicon NPN Epitaxial Planar Type 2SD2357 2SD2357 abstract |
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| Abstract: Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SD2359 2SD2359 Features Low collector-emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 20 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 5 V Collector current IC 1.2 ... | Original |
1 pages, |
Silicon NPN Epitaxial Planar Type 2SD2359 2SD2359 abstract |
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| Abstract: Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SD2474 2SD2474 Features Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 10 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 7 V Collector current IC 2.4 ... | Original |
1 pages, |
Silicon NPN Epitaxial Planar Type 2SD2474 transistor SMD 2f smd 2f marking 2f 2f npn smd transistor 2f smd transistor smd transistor 2f 2SD2474 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| Selection results for HF/VHF transistors, 1 results shown. "Type voltage", "","","","","dB","","%","W","MHz","VDC", "","","","","","","","","","", "BLW96/01 BLW96/01 BLW96/01 BLW96/01","SOT121","HF/VHF transistors","NPN silicon planar epitaxial transistor intended for use in Class AB","6.5","RF Power performance in s.s.b. class AB operation","67.0","200","28 - 108","50", www.datasheetarchive.com/download/13176972-651836ZC/41504_e.csv |
Philips | 13/06/2005 | 0.46 Kb | CSV | 41504_e.csv |
| Selection results for Broadband/basestation transistors, 1 results shown. "Type voltage", "","","","","dB","","%","W","MHz","VDC", "","","","","","","","","","", "BLW96/01 BLW96/01 BLW96/01 BLW96/01","SOT121","HF/VHF transistors","NPN silicon planar epitaxial transistor intended for use in Class AB","6.5","RF Power performance in s.s.b. class AB operation","67.0","200","28 - 108","50", www.datasheetarchive.com/download/41717166-651830ZC/41503_e.csv |
Philips | 13/06/2005 | 0.48 Kb | CSV | 41503_e.csv |
| SILICON POWER TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES n COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE340 MJE340 MJE340 MJE340 is a silicon epitaxial planar NPN transistor intended for use in medium power linear and switching applications.It is 350 2/5 DC Current Gain (NPN type) Collector Emitter Saturation Voltage (NPN type) DC Current ST | COMPLEMENTARY SILICON POWER TRANSISTORS Datasheet www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4171.htm |
STMicroelectronics | 20/10/2000 | 6.16 Kb | HTM | 4171.htm |
| The MJE340 MJE340 MJE340 MJE340 is a silicon epitaxial planar NPN transistor intended for use in medium Operating Area Derating Curve MJE340 MJE340 MJE340 MJE340 / MJE350 MJE350 MJE350 MJE350 2/5 DC Current Gain (NPN type) Collector Emitter Saturation Voltage (NPN type) DC Current Gain (PNP type) Collector Emitter Saturation Voltage (PNP type ST | COMPLEMENTARY SILICON POWER TRANSISTORS Datasheet COMPLEMENTARY SILICON POWER TRANSISTORS MJE340 MJE340 MJE340 MJE340 MJE350 MJE350 MJE350 MJE350 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4171-v3.htm |
STMicroelectronics | 25/05/2000 | 5.95 Kb | HTM | 4171-v3.htm |
| Medium Voltage Epitaxial Planar technology, resulting in a rugged high performance cost type) Collector Emitter Saturation Voltage (NPN type) DC Current Gain (PNP type) Collector ST | COMPLEMENTARY SILICON POWER TRANSISTORS Datasheet COMPLEMENTARY SILICON POWER TRANSISTORS MJD340 MJD340 MJD340 MJD340 MJD350 MJD350 MJD350 MJD350 Text Format MJD340 MJD340 MJD340 MJD340 MJD350 MJD350 MJD350 MJD350 COMPLEMENTARY SILICON POWER TRANSISTORS n www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3544-v3.htm |
STMicroelectronics | 25/05/2000 | 6.43 Kb | HTM | 3544-v3.htm |
| 340 is a silicon epitaxial planar NPN transistor intended for use in medium power linear / MJE350 MJE350 MJE350 MJE350 2/5 DC Current Gain (NPN type) Collector Emitter Saturation Voltage (NPN type) DC Current ST | COMPLEMENTARY SILICON POWER TRANSISTORS MJE340 MJE340 MJE340 MJE340 MJE350 MJE350 MJE350 MJE350 COMPLEMENTARY SILICON Format MJE340 MJE340 MJE340 MJE340 MJE350 MJE350 MJE350 MJE350 COMPLEMETARY SILICON POWER TRANSISTORS n ST PREFERRED SALESTYPES n COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS n LINEAR AND www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4171-v2.htm |
STMicroelectronics | 14/06/1999 | 4.11 Kb | HTM | 4171-v2.htm |
| SILICON POWER TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES n COMPLEMENTARY PNP - NPN DEVICES n Voltage Epitaxial Planar technology, resulting in a rugged high performance cost-effective transistor negative. Safe Operating Area Derating Curve MJD340 MJD340 MJD340 MJD340 / MJD350 MJD350 MJD350 MJD350 2/5 DC Current Gain (NPN type) Collector Emitter Saturation Voltage (NPN type) DC Current Gain (PNP type) Collector Emitter Saturation ST | COMPLEMENTARY SILICON POWER TRANSISTORS Datasheet www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3544.htm |
STMicroelectronics | 20/10/2000 | 6.69 Kb | HTM | 3544.htm |
| 340 is a silicon epitaxial planar NPN transistor intended for use in medium power linear / MJE350 MJE350 MJE350 MJE350 2/5 DC Current Gain (NPN type) Collector Emitter Saturation Voltage (NPN type) DC Current ST | COMPLEMENTARY SILICON POWER TRANSISTORS MJE340 MJE340 MJE340 MJE340 MJE350 MJE350 MJE350 MJE350 COMPLEMENTARY SILICON Format MJE340 MJE340 MJE340 MJE340 MJE350 MJE350 MJE350 MJE350 COMPLEMETARY SILICON POWER TRANSISTORS n ST PREFERRED SALESTYPES n COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS n LINEAR AND www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4171-v1.htm |
STMicroelectronics | 02/04/1999 | 4.15 Kb | HTM | 4171-v1.htm |
| Voltage Epitaxial Planar technology, resulting in a rugged high performance cost-effective transistor Operating Area Derating Curve MJD340 MJD340 MJD340 MJD340 / MJD350 MJD350 MJD350 MJD350 2/5 DC Current Gain (NPN type) Collector Emitter Saturation Voltage (NPN type) DC Current Gain (PNP type) Collector Emitter Saturation Voltage (PNP type) MJD340 MJD340 MJD340 MJD340 ST | COMPLEMENTARY SILICON POWER TRANSISTORS MJD340 MJD340 MJD340 MJD340 MJD350 MJD350 MJD350 MJD350 COMPLEMENTARY SILICON Format MJD340 MJD340 MJD340 MJD340 MJD350 MJD350 MJD350 MJD350 COMPLEMENTARY SILICON POWER TRANSISTORS n ST PREFERRED SALESTYPES n www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3544-v1.htm |
STMicroelectronics | 02/04/1999 | 4.64 Kb | HTM | 3544-v1.htm |
| Voltage Epitaxial Planar technology, resulting in a rugged high performance cost-effective transistor Operating Area Derating Curve MJD340 MJD340 MJD340 MJD340 / MJD350 MJD350 MJD350 MJD350 2/5 DC Current Gain (NPN type) Collector Emitter Saturation Voltage (NPN type) DC Current Gain (PNP type) Collector Emitter Saturation Voltage (PNP type) MJD340 MJD340 MJD340 MJD340 ST | COMPLEMENTARY SILICON POWER TRANSISTORS MJD340 MJD340 MJD340 MJD340 MJD350 MJD350 MJD350 MJD350 COMPLEMENTARY SILICON Format MJD340 MJD340 MJD340 MJD340 MJD350 MJD350 MJD350 MJD350 COMPLEMENTARY SILICON POWER TRANSISTORS n ST PREFERRED SALESTYPES n www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3544-v2.htm |
STMicroelectronics | 14/06/1999 | 4.6 Kb | HTM | 3544-v2.htm |