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Siemens tunnel diodes

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 41782: 41785: 41 791: 41 852: 41853: 41 854: Diodes Maximum Ratings General Instructions Semiconductor Technology Terms Relating to Diodes Terms Relating to Bipolar Transistors Siemens 21 Technical , , audio frequency Transistor: power, audio frequency Diode: tunnel Transistor: low power, high frequency , fixed meaning. Siemens 19 Technical Information Terms and symbols (DIN 41785) The notation , : /c , /c 20 Siemens Technical Information i -t No Signal . . -
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Tunnel Diode
Abstract: Semiconductor Group 70 SIEMENS 9 Technical Information RF and AF Transistors and Diodes in SMD , SIEMENS 1 Technical Information Type Designation in Accordance with Pro Electron This , , audio frequency Transistor: power, audio frequency Diode: tunnel diode Transistor: low power, high , designation consists of: Semiconductor Group SIEMENS 2 Technical Information Notation of the , Group 54 SIEMENS 3 Maximum Ratings Technical Information The maximum ratings specified are -
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SIEMENS thyristor transistor smd AFE
Abstract: lighting can take center stage. The night is the perfect setting for light-emitting diodes from OSRAM Opto , Light-emitting diodes are used to create patterns of colored light over the full height of the Yoshikawa , for work. The light-emitting diodes` low-profile construction produces a design that is both , , color changing lighting · Marker lights e.g. airport lighting, beacons, tunnel lighting, warning , diodes in all colors. Many of our customers value the durability and robustness of light-emitting diodes OSRAM
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Siemens photodiode visible light siemens photo sensor SOCRATES DRAGON EYE osram Phototransistor opto counter D-93049
Abstract: 1000 Type Siemens Aktiengesellschaft 15 ps Selection Guide PIN Diodes for , Assurance Siemens microwave transistors and diodes are manufactured applying the most advanced , â'Hi-relâ' Quality Level All Siemens â' Hi-relâ' microwave transistors and diodes are manufactured under , Gehausebauformen Verarbeitungshinweise Verpackungshinweise Schottky Diodes PIN Diodes Schott ky-Dioden , GaAs-FET GaAs MMICs GaAs-MMIC Siemens Worldwide (Addresses) Siemens in Ihrer Nahe -
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BFT65 D1279 Siemens 1414 legiert halbleiter index transistor germanium transistor
Abstract: for new design. Siemens Aktiengesellschaft 32 Selection Guide RF Transistors and Diodes I , Packaging Instructions HF-Dioden RF Diodes HF-Transistoren RF Transistors GaAs FET GaAs , Information on Literature SIEMENS Einzelhalbleiter Small-Signal Semiconductors HF-Transistoren und Dioden RF Transistors and Diodes Datenbuch I Data Book I Problemlos bestellen mit der SDC Preis , derzeit gultige SDC Preis- und Lagerliste erhalten Sie kostenlos bei Siemens AG Infoservice Postfach -
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transistor Bc 949 datenblatt TRANSISTOR 131-6 BJ 946 TRANSISTOR BC 545 DIODE smd marking 22-16 transistor smd marking BA rn transistor bf 175 B132-H6450-X-X-7400 B3-B3789 B3789-X-X-7600 B123- B6253-X-X-7600 B132-B6483-X-X-7400
Abstract: ambient temperature: (2) To common with ±VCC = 15V. (3) The inputs are protected by back-to-back diodes , recommended for lower total noise than the OPA27 (see Figure 5). INPUT PROTECTION Back-to-back diodes are , 50 Input VIRTEC V1000 Planar Tunnel Diode 200 2 20k ­ 3 OPA37 + + 200 , Output OPA37 + 250 6 1k ­ + 500pF 10k Siemens LHI 948 FIGURE 19. RF Detector -
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OP-07 OP-05 AD510 AD517 edo 6166 OPA27FZ edo 6166 transducer balanced riaa OPA27GZ OPA27/37 OP-27/OP-37
Abstract: = 15V. (3) The inputs are protected by back-to-back diodes. Current limiting resistors are not used , recommended for lower total noise than the OPA27 (see Figure 5). INPUT PROTECTION Back-to-back diodes are , . +15V 200 10uF/20V 20k 100 10k + VIRTEC V1000 50 Planar Tunnel Input 0.01uF , OPA27 + 10k 500pF Siemens LHI 948 FIGURE 19. RF Detector and Video Amplifier. 6 Output Burr-Brown
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airpax magnetic pickup OP-37 siemens OPA27AJ OPA27U tape head preamplifier Burr-Brown IC opa27 DG188 500MH OPA37EZ F/20V
Abstract: = 15V. (3) The inputs are protected by back-to-back diodes. Current limiting resistors are not used , recommended for lower total noise than the OPA27 (see Figure 5). INPUT PROTECTION Back-to-back diodes are , . +15V 200 10uF/20V 20k 100 10k + VIRTEC V1000 50 Planar Tunnel Input 0.01uF , OPA27 + 10k 500pF Siemens LHI 948 FIGURE 19. RF Detector and Video Amplifier. 6 Output Burr-Brown
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sbos135 riaa preamplifier circuit diagram OP-07AH INA106 equivalent Airpax pickup
Abstract: ambient temperature: (2) To common with ±VCC = 15V. (3) The inputs are protected by back-to-back diodes , (see Figure 5). INPUT PROTECTION Back-to-back diodes are used for input protection on the OPA27/37 , 10uF/20V 50 Input VIRTEC V1000 Planar Tunnel Diode 200 2 20k ­ 3 OPA37 + + , Input Output OPA37 + 250 6 1k ­ + 500pF 10k Siemens LHI 948 FIGURE 19. RF Burr-Brown
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OPA27EZ OPA27CJ OPA27AZ EO100 OPA27EJ Instrumentation Amplifier IC 741
Abstract: : tunnel diode Transistor: low power, high frequency Multiple of dissimilar devices; miscellaneous , intrinsic resistance Forward resistance of diodes Resistance (DC or average value) Resistance between , and Diodes in SMD Packages In SMD packages the heat is primarily dissipated via the pins. The total , RthJS TA max = TJ max ­ Ptot max × RthJA In diodes the power dissipation is for the most part caused , 41 782: Diodes DIN 41 785: Maximum Ratings DIN 41 791: General Instructions DIN 41 852 Siemens
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germanium diode smd SMD Transistor Y12 Technical Explanations power transistor NF50
Abstract: : tunnel diode Transistor: low power, high frequency Multiple of dissimilar devices; miscellaneous , diodes Resistance (DC or average value) Resistance between base and emitter Internal resistance of , 9 RF and AF Transistors and Diodes in SMD Packages In SMD packages the heat is primarily , max = TJ max ­ Ptot max × RthJA In diodes the power dissipation is for the most part caused by , literature: DIN 41 782: Diodes DIN 41 785: Maximum Ratings DIN 41 791: General Instructions DIN 41 852 Siemens
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UJT APPLICATION Y22 transistor smd SMD transistor y11 y-parameter SMD Transistor g22
Abstract: back-to-back diodes. Current limiting resistors are not used in order to achieve low noise. If differential , of 1k is recommended, as shown in Figure 6. 6 OPA27/37 3 4 Back-to-back diodes are used , 200 20k 10uF/20V 100 10k + VIRTEC V1000 50 Planar Tunnel Input 0.01uF Diode , Siemens LHI 948 FIGURE 19. RF Detector and Video Amplifier. 100uF/20V Tantalum 6 Output 10k Texas Instruments
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OP-27 OP-37 2k potentiometer OPA27GP noise diode SBOS135C
Abstract: ambient temperature. (2) To common with ±VCC = 15V. (4) The inputs are protected by back-to-back diodes , oscillation. INPUT PROTECTION Back-to-back diodes are used for input protection on the OPA27 and OPA37 , Planar Tunnel Input 0.01uF Diode 2 3 200 OPA37 6 Video Output 1 100uF/20V Tantalum + 10k 2 3 OPA27 6 Output 2 RFC 500pF 10k Siemens LHI 948 3 FIGURE 19. RF Detector and Video Texas Instruments
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Abstract: ambient temperature. (2) To common with ±VCC = 15V. (4) The inputs are protected by back-to-back diodes , oscillation. INPUT PROTECTION Back-to-back diodes are used for input protection on the OPA27 and OPA37 , Planar Tunnel Input 0.01uF Diode 2 3 200 OPA37 6 Video Output 1 100uF/20V Tantalum + 10k 2 3 OPA27 6 Output 2 RFC 500pF 10k Siemens LHI 948 3 FIGURE 19. RF Detector and Video Texas Instruments
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ISO/TS16949
Abstract: ambient temperature. (2) To common with ±VCC = 15V. (4) The inputs are protected by back-to-back diodes , oscillation. INPUT PROTECTION Back-to-back diodes are used for input protection on the OPA27 and OPA37 , Planar Tunnel Input 0.01uF Diode 2 3 200 OPA37 6 Video Output 1 100uF/20V Tantalum + 10k 2 3 OPA27 6 Output 2 RFC 500pF 10k Siemens LHI 948 3 FIGURE 19. RF Detector and Video Texas Instruments
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100hz lowpass filter op07ah
Abstract: ambient temperature. (2) To common with ±VCC = 15V. (4) The inputs are protected by back-to-back diodes , oscillation. INPUT PROTECTION Back-to-back diodes are used for input protection on the OPA27 and OPA37 , Planar Tunnel Input 0.01uF Diode 2 3 200 OPA37 6 Video Output 1 100uF/20V Tantalum + 10k 2 3 OPA27 6 Output 2 RFC 500pF 10k Siemens LHI 948 3 FIGURE 19. RF Detector and Video Texas Instruments
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Abstract: back-to-back diodes. Current limiting resistors are not used in order to achieve low noise. If differential , of 1k is recommended, as shown in Figure 6. 6 OPA27/37 3 4 Back-to-back diodes are used , 200 20k 10uF/20V 100 10k + VIRTEC V1000 50 Planar Tunnel Input 0.01uF Diode , 10k 500pF Siemens LHI 948 FIGURE 19. RF Detector and Video Amplifier. 6 Output 10k Texas Instruments
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diode rfc OPA111 LHi 948 Airpax
Abstract: ambient temperature. (2) To common with ±VCC = 15V. (4) The inputs are protected by back-to-back diodes , oscillation. INPUT PROTECTION Back-to-back diodes are used for input protection on the OPA27 and OPA37 , Planar Tunnel Input 0.01uF Diode 2 3 200 OPA37 6 Video Output 1 100uF/20V Tantalum + 10k 2 3 OPA27 6 Output 2 RFC 500pF 10k Siemens LHI 948 3 FIGURE 19. RF Detector and Video Texas Instruments
Original
Abstract: ambient temperature. (2) To common with ±VCC = 15V. (4) The inputs are protected by back-to-back diodes , oscillation. INPUT PROTECTION Back-to-back diodes are used for input protection on the OPA27 and OPA37 , Planar Tunnel Input 0.01uF Diode 2 3 200 OPA37 6 Video Output 1 100uF/20V Tantalum + 10k 2 3 OPA27 6 Output 2 RFC 500pF 10k Siemens LHI 948 3 FIGURE 19. RF Detector and Video Texas Instruments
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Synchronous demodulator
Abstract: back-to-back diodes Current limiting resistors are not used in order to achieve low noise. If differential , . INPUT PROTECTION B ack-to-back diodes are used for input protection on the O PA 27/37. E xceeding a few , nity-G ain B uffer. -Y A -50 ÎÎ Input VIRTEC V1000 Planar Tunnel Diode 10jjF/20V 9 + 1 5 V , * 20011 ' RFC T Video Output 500pF 2 3 OPA27 Output H X I _ Siemens LHl 948 -
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0PA37 OPA27CZ P-27/O OPA37E2 17313L
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