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1458868 Phoenix Contact Circular Connector
1458101 Phoenix Contact Cable Assembly
1458884 Phoenix Contact Circular Connector Adapter
1458800 Phoenix Contact Circular Connector, 5 Contact(s), Female, Socket, ROHS COMPLIANT
1458855 Phoenix Contact Circular Connector
LM1458M/NOPB Texas Instruments Dual Operational Amplifier 8-SOIC 0 to 70

Siemens A 1458

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: SIEMENS Dual Operational Amplifier TBB 1458 Features · · · · · NPN input High differential input voltage Short-circuit proof Push-pull output Fully compatible with industrial standard type 1458 Bipolar IC Applications · · Amplifier Comparator The op amp TBB 1458 is outstanding for Its large , 1458 B Output A l £ - Input A 2 ^ * Input -/s TBB 1458 G ]a -k s ^7 Output Output A - In p u t , amp. Type STBB 1458 B TB B 1458 G Ordering Code Q67000-A1036 Q67000-A1458 Package P-DIP -
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TBB1458 1458G TBB1458B TBB 1458 P IC 1458 TBB 1458
Abstract: M7E D SIEMENS â  Ã± 2 3 S hG S GG34bfiS 0 â  S I E G SI EM EN S A K T I E N G E S E L , output Fully compatible with industrial standard type 1458 Applications ââ'¢ Amplifier , Package Color Code â  0T B B 1458 B Q67000-A1036 P-DIP-8 - â  STBB 1458 G , ± l/s , w h e re b y th e m a x im u m ra tin g s m u st n ot be e xceeded. Siemens , » û b « S I E G S I E M EN S A K T I E N G E S E L L S C H Ã' F T B B 1458 T - 7 ^ 7 O p e -
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Abstract: SIEMENS NPN Silicon RF Transistor BFQ82 â'¢ For low-noise, high-gain amplifiers up to 2 GHz , , Vce = 8V 7c = 30 mA, Vce = 8 V Hfe 50 110 120 250 Ã"235L05 00b7E03 flbM Siemens Aktiengesellschaft , mA, Vce = 8 V,/= 800 MHz IP3 - 32 - dBm 1) Gma = I â'" I (k â'" "^k 2 â'" 1) I S 12b I Siemens , 10 dB G 20 mA 30 10 20 mA 30 â h. fl23SbOS 00b7S07 MOT â  Siemens Aktiengesellschaft 796 , Siemens Aktiengesellschaft I a?35b05 GDb72Gà 34b 797 BFQ 82 Power gain G ma, Gm, |5:i. I2 =/ (/) le = -
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Q62702-F1189 ZO 607 MA 7A 523 cmo 765 ZO 607 MA 7A 524 transistor zo 607 MA 7S CM 1241 siemens Ka2 transistor
Abstract: SIEMENS bfp 161 NPN Silicon RF Transistor â'¢ For low noise, high-gain broadband , Semiconductor Group â  1998-11-01 fl235L.D5 D1E1Ã7S 25e â  ! SIEMENS BFP 181 SPICE , Semiconductors by: Institut für Mobil-und Satellitenfunktechnik (IMST) © 1996 SIEMENS AG Package , distributor or sales office to obtain a Siemens CD-ROM or see internet: Semiconductor Group 1458 fl535fc.05 D1E1Ã7L 1«J5 1998-11-01 SIEMENS -
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1AJ5 900MH Q62702-F1271 Q121673
Abstract: SIEMENS CGY41 HiRel L- and S-Band GaAs General Purpose Amplifier â'¢ HiRel Discrete and Microwave Semiconductor â'¢ Single-stage monolithic microwave IC (MMIC-amplifier) â'¢ Application range: 200 MHz to 3 GHz â'¢ Gain: 9.5 dB typ. @ 1.8 GHz â'¢ Low noise figure: 2.7 dB typ. @ 1.8 GHz â , -81617 Munich. © Siemens AG 1998. All Rights Reserved. As far as patents or other rights of third parties are , nearest Siemens Office, Semiconductor Group. Siemens Semiconductors is a certified CECC and QS9000 -
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35 micro-X Package MARKING CODE Q Amplifier Micro-X siemens family 30 MMIC marking code R mmic marking code j mmic code marking P 18 Q62702G95 Q62702G94 D-81617
Abstract: Load P totm ax/ p totDC = H1 p) ''» U S Semiconductor Group 1458 12.96 SIEMENS , SIEMENS NPN Silicon RF Transistor · For low-noise, high-gain broadband amplifier at collector , Q62702-F1572 IS C JI m II CD Package SOT-363 3/6 = C £ da ta below is of a single transistor , . II Semiconductor Group 1455 12.96 SIEMENS Electrical Characteristics at Parameter = 25 , = 8 V Semiconductor Group 1456 12.96 SIEMENS Electrical Characteristics at TA = 25 -
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amplifier siemens sot-363 321/S IS21I2
Abstract: SIEMENS Dual PNP-Operational Amplifiers TAE 2453 TAF 2453 Bipolar 1C Features · · · · · · · · · , temperature range (TAF 2453 G) Pin-compatible to TBB 1458 B The characteristic curves of the electric , independent, frequency-compensated op amps, each having a PNP-input differential stage and an open collector output. The integrated regulator provides for all parameters a large degree of independence from the supply voltage. Semiconductor Group 1 01.96 SIEMENS Pin Configurations (top view) TAE -
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1458b tAe 1458 TAE 2453 a TAE1453G Q67000-A2211 IEP00227 IES00228
Abstract: voltage switch Comparator Siemens Aktiengesellschaft 101 TAE 2453 A; G TAF 2453 A; G Pin , -Input B «-Input A 3d i d ^5 »Input B Connection Diagram Siemens Aktiengesellschaft , H 5 +Input B TAE 2453 A; G TAF 2453 A; G Circuit Diagram Siemens Aktiengesellschaft 103 , ' Siemens Aktiengesellschaft â  nun 105 dB TAF 2453 A; G Maximum Ratings Description , 125 °C Siemens Aktiengesellschaft I 1 II Ilf 106 TAF 2453 A; G -
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Q67000-A2107 Q67000-A2108 Q67000-A2210 2453/TAE
Abstract: SIEMENS GaAs FET CLY15 -* Ts Permissible Pulse Load Plot »a* / Flo'. D C ; f i t pi , SIEMENS GaAs FET CLY15 Datasheet * Power am plifier for mobile phones * For frequencies , °C ) Ts: Temperature at soldering point Symbol Vos V DG V GS 'D T Ch T stg p tot 9 Unit V V V A , 09.96 SIEMENS GaAs FET CLY 15 Electrical characteristics (T4 = 25°C, unless otherwise , -3.8V Symbol to s s min 2 .4 typ 3 .2 max 4 .8 Unit A V 'GS = 0V b 400 ma -
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FET marking code 365 Q62702-L99
Abstract: bGE » â  0235bOS OOM'HbB b , common-mode voltage range W ide operating temperature range (TAF 2453 A; G) Pin-compatible to TBB 1458 B , « S I E G SIEMENS TAE 2453 TAF 2453 SIEMENS AKTIENGESELLSCHAF TAE 2453 A TAF 2453 A , Group X I 6 -In p u t B 59 büE P â  0235bD5 DDMTTbS 4bb â  SIEG SIEMENS tac oí , SIEMENS â'" SIEMENS â  6E3SbOS OGMTTbb 3TB « S I E G TAB 2453 TAF 2453 A KT I EN6 -
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tab 2453 tab 2453 A FI 2453
Abstract: SIEMENS Dual PNP Operational Amplifiers TAE 2453 TAF 2453 Bipolar IC Features ââââââââââ'¢ Supply voltage range between 3 V and 36 V Low current , common-mode voltage range Wide operating temperature range (TAF 2453 A; G) Pin-compatible to TBB 1458 B The characteristic curves of the electric parameters correspond to those of type TAE 1453 A; G Applications â'¢ Amplifier â'¢ Level converter â'¢ Driver â'¢ Zero voltage switch â'¢ Comparator Type VPS05121 -
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67000-A2211
Abstract: SI EMI is»*. Dual PNP Operational Amplifiers TAE 2453 TAF 2453 Features Bipolar IC â'¢ Supply voltage range between 2 V (1.8 V) and 36 V â'¢ Low current consumption, 0.8 mA typ. â'¢ Extremely large control range â'¢ Low output saturation voltage, almost independent of load current â'¢ Output current up to 70 mA (max. 100 mA) â'¢ Output virtually short-circuit proof â'¢ Wide common-mode voltage range â'¢ Wide operating temperature range (TAF 2453 A; G) â'¢ Pin-compatible to TBB 1458 B â -
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TAE2453A 2453A TAE1453A TAE 1453 A TA 2453 A2211
Abstract: ' Siemens Aktiengesellschaft 110 TAE 2453 TAF 2453 Characteristics (TAF 2453) Vs = ± 5 V to  , S lfcfcU N *. Dual PNP Operational Amplifiers TAE 2453 TAF 2453 Features ââââââââââ'¢ Bipolar 1C Supply voltage range between 2 V (1.8 V) and 36 V , short-circuit proof Wide common-mode voltage range Wide operating temperature range (TAF 2453 A; G) Pin-compatible to TBB 1458 B The characteristic curves of the electric parameters correspond to those of type -
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Abstract: Gate-source voltage VGS -6 V ID 5 A Channel temperature TCh 150 °C Storage , Channel-soldering point (GND) 1) Dimensions see chapter Package Outlines Siemens Aktiengesellschaft pg. 1/7 , VDS = 3V Unit IDSS 2.4 3.2 4.8 A - - 400 uA IG - 20 70 uA , . Siemens Aktiengesellschaft pg. 2/7 09/96 HL EH PD 21 CLY 15 GaAs FET Output Charateristics VGS = 0V 3 2,5 VGS = -0.5V ID [A] 2 1,5 VGS = -1V 1 Siemens
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siemens 30 090 gaas fet marking a 440 485 hl 1606
Abstract: application note is intended to serve as a design and application guide for users of the DLO7135 and DLG7137 Siemens Intelligent Displays. This appnote covers device electrical description, operation, general , , and drivers built into a single package. RoW Driver .160 (4.06) Pin 1 Indicator Z DLO7135 SIEMENS YYWW Character ROM .018 (.45) sq. 1.00 (2.54) typ. Figure 1. DLX713X block diagram Memory Thirty-five dots form a 0.48 x 0.68 inch overall character size in a 0.700 x Siemens
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IC 74ls244 latch pin diagram of ic 74373 IC 74373 IC 74373 pin diagram 74LS138 led matrix function of latch ic 74373
Abstract: 453 A; G) P in -co m p a tib le to T B B 1458 B T h e ch a ra cte ristic cu rve s o f th e ele ctric p , 58 9.92 SIEMENS TAE 2453 TAF 2453 TA E 2453 A T A F 2453 A ]a ^ Output A 1 u n -Input A , S e m ico n d ucto r G roup 60 SIEMENS TAE 2453 TAF 2453 A b so lu te M axim um R atin , SIEMENS C h a ra c te ristic s (TA E 2 4 5 3) (con t'd) V s = ± 5 V t o ± 15V ; R l = 2 k n , unless o th , e ra tu re 7 a 'C S e m ico n d ucto r G roup 62 SIEMENS TAE 2453 TAF 2453 -
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VPS05I21 2453b 2453 TAF2453A
Abstract: SIEMENS NPN Silicon RF Transistor â'¢ For broadband amplifiers up to 2 GHz and fast , 0.16 0.4 V Base-emitter voltage Ic = 5 mA, Vce = 6 V Vbe - 0.78 - â23SbOS OObTin 240 â  Siemens , dBm I fi535b05 00L7120 Tb2 â  Siemens Aktiengesellschaft 709 BFQ 71 Total power dissipation Pm = , Siemens Aktiengesellschaft 710 â  Ã23SLD5 00b7121 ITS â  BFQ 71 Common Emitter Noise Parameters , Siemens Aktiengesellschaft 711 fl235bOS 0Db71E5 635 â  BFQ 71 Circles of constant noise figure F = -
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BFQ71 Q62702-F775 VCE05181 5N521 bfq 85 siemens Pm 90 87
Abstract: Wide operating temperature range (TAF 2453 G) Pin-compatible to TBB 1458 B The characteristic curves , having a PNP-input differential stage and an open collector output. The integrated regulator provides for all parameters a large degree of independence from the supply voltage. Semiconductor Group , TAF 1453. Semiconductor Group 8 Siemens Siemens
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2453g TAF2453G TAE2453G TAE2453 GV075 IC 2453
Abstract: Specification 10.97 Edition 10.97 Published by Siemens AG, Bereich Halbleiter, MarketingKommunikation, Balanstraße 73, 81541 München © Siemens AG 1995. All Rights Reserved. Attention please! As far as patents , Semiconductor Group Offices in Germany or the Siemens Companies and Representatives worldwide (see address , the types in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG , purpose! Critical components1 of the Semiconductor Group of Siemens AG, may only be used in Siemens
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100MHz SMD RF Mixer RF mixer 920 Mhz gilbert cell differential pair siemens capacitors DCS1800 B 647 AC transistor P-TSSOP-24
Abstract: 10 V, lD = 75 mA V d s = 10 V, Id = 1.5 A toss VGS(th) 9fs 1 mA Volts Siemens D yn am , The 10012 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.5 GHz. It is rated at 12 w a tts m inim um o utput pow er. N itride surface , perature Total Device Dissipation a tT f|ar)ge = 2 5 °C Above 25° G derate by Storage Tem perature Thermal , Unit Vdc Vdc ÛC Watts w/°c °c °G/W FfejC * A " PTE" number indicates that specification is -
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1216 mosfet siemens transistor D 1666
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