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SiC IGBT High Power Modules

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Abstract: real benefits of the Si IGBT/SiC Diode Copack over the commercial Si IGBT power modules can , Si IGBT power modules in high switching loss reduction of about 28% as compared to its silifrequency , development of the low loss, high current, high voltage, rugged power modules for high frequency power , switching frequencies >5 kHz. IGBT modules are the industry standard power semiconductor modules for various applications between the kW and MW power range [1]. In IGBT power modules, IGBTs are integrated ... GeneSiC Semiconductor
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3 pages,
476.55 Kb

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Abstract: can replace state-of-theart Si IGBT power modules in high frequency power electronic applications , TECHNOLOGY 1200 V/100 A Si IGBT/SiC Diode Copack for Power Electronic Applications Designed , development of the low loss, high current, high voltage, rugged power modules for high frequency power , switching frequencies >5 kHz. IGBT modules are the industry standard power semiconductor modules for various applications between the kW and MW power range [1]. In IGBT power modules, IGBTs are integrated ... GeneSiC Semiconductor
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datasheet

2 pages,
88.52 Kb

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Abstract: companion JBS diode technology make it possible to design and fabricate high power SiC switch modules. An , , "A 180 Amp/4.5 kV 4H-SiC PiN Diode for High Current Power Modules," 18th Internatinal Symposium on , state power substation has produced a 10kV/50A SiC dual switch power module. Higher current modules in , relationship is more pronounced for SiC. This is the main reason SiC power modules parallel additional lower , the SiC power devices with the best module materials and processes to develop best in class modules ... Original
datasheet

6 pages,
671.67 Kb

W911NF-04-2-0022 CM100DY-24NF comparison of IGBT and MOSFET 100A Mosfet MOSFET Module sic wafer 100 mm N00014-05-C-0202 Cree SiC diode die 4600 mosfet 4600 dual mosfet Cree SiC MOSFET SiC MOSFET SiC IGBT High Power Modules 10KV SiC TEXT
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Abstract: POWER MODULES 2015 � 16 Vincotech About us About Vincotech EMPOWERING YOUR IDEAS , reliable partner in power modules. The enterprise develops and manufactures high-quality electronic power , Power Modules (IPM), Power Integrated Modules (PIM, a combination of input rectifier, inverter and , /AMNPC converter modules. Vincotech offers a wide range of power module topologies, standard , have chosen the right partner for power modules. Vincotech is fast and flexible. And that agility ... Vincotech
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134 pages,
7894.17 Kb

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Abstract: Power Modules Next-Gen, 3-Level Inverter Power Modules in flow0 Housing: Up with Efficiency , 82008 Unterhaching Germany www.vincotech.com Status: Feb-13 Power Modules Part no.: Voltage , Fast Field Stop IGBT + 600V SiC Diode + 1200V FRED 10-FZ06NRA069FP02-P967F68 10-FZ06NRA069FP02-P967F68 2x600 V 69 A CoolMOS C6 // Fast Field Stop IGBT + 600V SiC Diode + 1200V Stealth 10-FZ06NRA069FP03-P967F78 10-FZ06NRA069FP03-P967F78 2x600 , Stealth II Diode + 1200V Stealth Diode Fast Field Stop IGBT + 600V SiC Diode + 1200V FRED CoolMOS C6 ... Vincotech
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datasheet

3 pages,
416.28 Kb

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Abstract: Development of IGBT spurred revolution in high power electronics · Power transistor modules have decreased in , Power Systems Inc. · Discrete or module SCRs, Diodes · IGBT modules · Air or liquid cooled High , IGBT modules & liquid heatsinks comprise < 20% of SSIM module High Heat Flux Applications in Power , Double sided cooling of IGBT & MOSFET chips in modules? High Heat Flux Applications in Power , associated with new power semiconductor materials, i.e. SiC High Heat Flux Applications in Power ... Original
datasheet

53 pages,
5484.53 Kb

three phase SCR Bridge driving ic SCR Gate Drive for ac to dc converter SCR 100A 1600V IXYS IXYS SCR MODULE Gate Drive Mitsubishi SiC IPM module SEM 2005 16 PINS skiip 32 ups 063 SCR GTO die 3 phase motor soft starter with two SCR Heatsink For stud devices - Semikron SCR Doubler Module zvs zcs induction heating igbt SiC BJT Cree SiC MOSFET igbt induction heating generator IGCT mitsubishi skiip 33 ups 063 power IGBT MOSFET GTO SCR diode mitsubishi sic MOSFET mosfet base induction heat circuit TEXT
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Abstract: measurements performed on 1200 V/10 A SiC JBS rectifiers. Hybrid Si IGBT + SiC JBS Rectifier Co-Pack Modules , the overall power losses of the two IGBT modules are shown in Figure 5(b). The IGBT turn-off losses , compared with an off-the-shelf all-Si IGBT power co-pack, GeneSiC’s GA100XCP12-227 GA100XCP12-227 co-pack offers 88 , (JBS) rectifiers and 1200 V/100 A Si IGBT with SiC anti-parallel diode co-packs designed and fabricated at GeneSiC. The SiC JBS rectifiers are designed for > 225 °C operation with high surge current ... GeneSiC Semiconductor
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4 pages,
829.14 Kb

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Abstract: tests prototype high temperature operation power modules that utilize SiC elements and introduces a , Develop the industry's first transfer mold SiC power modules capable of high temperature operation (up , SiC Power Devices vol.3 The Industry's First Mass-Produced "Full SiC" Power Modules ROHM now offers SiC power devices featuring a number of characteristics, including: high breakdown voltage, low , modules SiC enables simultaneous high speed switching with low integrating SiC devices produced ... ROHM
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9 pages,
3319.95 Kb

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Abstract: (40…150kHz) 600V 2x (165mΩ // 45A) CP MosFet // PT IGBT + SiC ultra high speed , high current , * IGBT2 + Stealth II high current (20.100kHz) Power Modules OE F0062TA099FH02 F0062TA099FH02 (17mm /  , ) 600V 2x (165mΩ // 45A) CP MosFet // PT IGBT + SiC ultra high speed , high current , Power Modules Power Modules for Active Power Factor Correction Vincotech is pleased to announce , Unterhaching Germany http://www.vincotech.com 600V 2 x 99mΩ CP MosFet +SiC ultra high speed ... Vincotech
Original
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2 pages,
191.95 Kb

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Abstract: during the introduction of IGBT high power modules. 10.000.000 IHV (traction) Since their market introduction in the beginning of 1995, eupec IGBT high power modules (IHM) got a quick access to , . Lefranc, R. Spanke, ,Multichip high power IGBT modules for traction and industrial applications," , Bonding A high power IGBT module comprises approx. 450 wires together with 900 wedge bonds. For many , bond contact. Test results of short time power cycling on IGBT modules with up to 24 paralleled IGBT ... Eupec
Original
datasheet

4 pages,
53.61 Kb

igbt failure fit HIGH VOLTAGE DIODE 3.3kv PCIM 96 failure analysis IGBT eupec igbt 3.3kv SiC IGBT High Power Modules 1287-standard TEXT
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