500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Direct from the Manufacturer

Part Manufacturer Description PDF & SAMPLES
HIGHEFFPMPDOCK-REF Texas Instruments High Efficiency Portable Media Player (PMP) Docking Station
POWEREST Texas Instruments Power Estimation Tool (PET)
SOLARMAGIC-SOLARPOWEROPTIMIZER-REF Texas Instruments SolarMagic SM3320-RF-EV Solar Power Optimizer with RF Communications Reference Design
MSP430-3P-PCC-LIFETIMEPOWEREVALDEVKT Texas Instruments Lifetime Power? Evaluation and Development Kit
POE-PD-POWER-REF Texas Instruments LM5072 5V out 25W IEEE 802.3at Compliant POE+ PD Power Reference Design
RI-UHF-IC116-00 Texas Instruments PACKAGED UHF IC FOR PCB TRACKING APPLICATION 6-USON -40 TO 125

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : TGSICIG Supplier : Panduit Manufacturer : Avnet Stock : - Best Price : $19.3133 Price Each : $21.6622
Part : TGSICIG Supplier : Panduit Manufacturer : Heilind Electronics Stock : - Best Price : - Price Each : -
Part : TGSICIG Supplier : Panduit Manufacturer : Interstate Connecting Components Stock : - Best Price : - Price Each : -
Part : TGSICIG Supplier : Panduit Manufacturer : Sager Stock : - Best Price : $20.55 Price Each : $25.85
Shipping cost not included. Currency conversions are estimated. 

SiC IGBT High Power Modules

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: real benefits of the Si IGBT/SiC Diode Copack over the commercial Si IGBT power modules can , Si IGBT power modules in high switching loss reduction of about 28% as compared to its silifrequency , development of the low loss, high current, high voltage, rugged power modules for high frequency power , switching frequencies >5 kHz. IGBT modules are the industry standard power semiconductor modules for various applications between the kW and MW power range [1]. In IGBT power modules, IGBTs are integrated GeneSiC Semiconductor
Original
GA100XCP12-227 GA100XCP12
Abstract: can replace state-of-theart Si IGBT power modules in high frequency power electronic applications , TECHNOLOGY 1200 V/100 A Si IGBT/SiC Diode Copack for Power Electronic Applications Designed , development of the low loss, high current, high voltage, rugged power modules for high frequency power , switching frequencies >5 kHz. IGBT modules are the industry standard power semiconductor modules for various applications between the kW and MW power range [1]. In IGBT power modules, IGBTs are integrated GeneSiC Semiconductor
Original
Abstract: companion JBS diode technology make it possible to design and fabricate high power SiC switch modules. An , , "A 180 Amp/4.5 kV 4H-SiC PiN Diode for High Current Power Modules," 18th Internatinal Symposium on , state power substation has produced a 10kV/50A SiC dual switch power module. Higher current modules in , relationship is more pronounced for SiC. This is the main reason SiC power modules parallel additional lower , the SiC power devices with the best module materials and processes to develop best in class modules -
Original
10KV SiC SiC MOSFET Cree SiC MOSFET 4600 dual mosfet 4600 mosfet Cree SiC diode die V/100A V/50A
Abstract: POWER MODULES 2015 � 16 Vincotech About us About Vincotech EMPOWERING YOUR IDEAS , reliable partner in power modules. The enterprise develops and manufactures high-quality electronic power , Power Modules (IPM), Power Integrated Modules (PIM, a combination of input rectifier, inverter and , /AMNPC converter modules. Vincotech offers a wide range of power module topologies, standard , have chosen the right partner for power modules. Vincotech is fast and flexible. And that agility Vincotech
Original
mosfet equivalent 25AC12T4v fy074pa SKIIP 33 UPS 06 SKiiP 83 AC 12 i t 46 V23990-P769-A-PM ISO/TS16949- ISO14001-
Abstract: Power Modules Next-Gen, 3-Level Inverter Power Modules in flow0 Housing: Up with Efficiency , 82008 Unterhaching Germany www.vincotech.com Status: Feb-13 Power Modules Part no.: Voltage , Fast Field Stop IGBT + 600V SiC Diode + 1200V FRED 10-FZ06NRA069FP02-P967F68 2x600 V 69 A CoolMOS C6 // Fast Field Stop IGBT + 600V SiC Diode + 1200V Stealth 10-FZ06NRA069FP03-P967F78 2x600 , Stealth II Diode + 1200V Stealth Diode Fast Field Stop IGBT + 600V SiC Diode + 1200V FRED CoolMOS C6 Vincotech
Original
10-F006NPA070FP-P969F09 10-FZ06NRA099FS-P963F68
Abstract: Development of IGBT spurred revolution in high power electronics · Power transistor modules have decreased in , Power Systems Inc. · Discrete or module SCRs, Diodes · IGBT modules · Air or liquid cooled High , IGBT modules & liquid heatsinks comprise < 20% of SSIM module High Heat Flux Applications in Power , Double sided cooling of IGBT & MOSFET chips in modules? High Heat Flux Applications in Power , associated with new power semiconductor materials, i.e. SiC High Heat Flux Applications in Power -
Original
mosfet base induction heat circuit mitsubishi sic MOSFET power IGBT MOSFET GTO SCR diode skiip 33 ups 063 IGCT mitsubishi igbt induction heating generator CVN-78
Abstract: measurements performed on 1200 V/10 A SiC JBS rectifiers. Hybrid Si IGBT + SiC JBS Rectifier Co-Pack Modules , the overall power losses of the two IGBT modules are shown in Figure 5(b). The IGBT turn-off losses , compared with an off-the-shelf all-Si IGBT power co-pack, GeneSiCâ'™s GA100XCP12-227 co-pack offers 88 , (JBS) rectifiers and 1200 V/100 A Si IGBT with SiC anti-parallel diode co-packs designed and fabricated at GeneSiC. The SiC JBS rectifiers are designed for > 225 °C operation with high surge current GeneSiC Semiconductor
Original
Abstract: tests prototype high temperature operation power modules that utilize SiC elements and introduces a , Develop the industry's first transfer mold SiC power modules capable of high temperature operation (up , SiC Power Devices vol.3 The Industry's First Mass-Produced "Full SiC" Power Modules ROHM now oï¬'ers SiC power devices featuring a number of characteristics, including: high breakdown voltage, low , modules SiC enables simultaneous high speed switching with low integrating SiC devices produced ROHM
Original
56P6733E 1500SG
Abstract: (40â'¦150kHz) 600V 2x (165mâ"¦ // 45A) CP MosFet // PT IGBT + SiC ultra high speed , high current , * IGBT2 + Stealth II high current (20.100kHz) Power Modules OE F0062TA099FH02 (17mm / Â , ) 600V 2x (165mâ"¦ // 45A) CP MosFet // PT IGBT + SiC ultra high speed , high current , Power Modules Power Modules for Active Power Factor Correction Vincotech is pleased to announce , Unterhaching Germany http://www.vincotech.com 600V 2 x 99mâ"¦ CP MosFet +SiC ultra high speed Vincotech
Original
FZ062UA040FP 8kw pfc FZ062TA099FH FZ062UA032FP10/11 FZ062TA030FB FZ062TA040FB FZ062UA032FP12
Abstract: during the introduction of IGBT high power modules. 10.000.000 IHV (traction) Since their market introduction in the beginning of 1995, eupec IGBT high power modules (IHM) got a quick access to , . Lefranc, R. Spanke, ,Multichip high power IGBT modules for traction and industrial applications," , Bonding A high power IGBT module comprises approx. 450 wires together with 900 wedge bonds. For many , bond contact. Test results of short time power cycling on IGBT modules with up to 24 paralleled IGBT Eupec
Original
1287-standard eupec igbt 3.3kv failure analysis IGBT PCIM 96 HIGH VOLTAGE DIODE 3.3kv igbt failure fit
Abstract: and power modules · Standard and custom products 2 Primary Inverter Markets · Solar · UPS , Least conduction loss High Voltage Power MOSFETs Fast, Soft Recovery Diodes · Power MOS 8TM , Power Modules for Inverters Why modules? Standard Power Modules · Space savings · Wide , Input Power Conditioning Input Conditioning Requirements · Reduce magnetics size, cost ­ High , diode 600V Thunderbolt IGBT Switch ­ High voltage rated devices, up to 1200V 400V ­ 800V Microsemi
Original
APT60N60BCSG single phase inverter IGBT wind inverter Thunderbolt buck 800v igbt single phase inverter mosfet mosfet power inverter 500w 50/60H 00E-07 00E-06 50E-06
Abstract: . . . . . . . . . . . . . . . . . . . . . . . . 33 IGBT + SiC Diode Power Modules BOOST CHOPPER , .31-32 SiC Power Modules , All Products RoHS Compliant EXCLUDING Reference Design Kits Power Modules Contents IGBT Power , . . . . . . . . . . . . 33 MOSFET + SiC Diode Power Modules SINGLE SWITCH + SERIES FRED AND SiC , TBD Power Semiconductors Power Modules RF Power MOSFETs â"¢ Power Matters. About Microsemi Microsemi
Original
VRF2933FL VRF164FL ARF463AP1 Non - Isolated Buck, application MS5-001-14
Abstract: IGBTs, SiC MOSFETs and JFETs by reducing the power losses tremendously and delivering high temperature , of SiC power transistors has lagged behind. [4-5]. GeneSiC is developing an innovative SiC power , ) than any other competitor SiC switch. The MOS interface reliability-related issues and high channel , channel free SiC SJTs deliver high temperature performance (> 300 °C). Unlike SiC SJT, SiC MOSFET , SiC JFET displays a very high positive temperature coefficient of VDS(on) and lower temperature GeneSiC Semiconductor
Original
IXZ421DF12N100 IXZ4DF18N50 IXZ4DF12N100 IXZ421DF18N50 DEIC515 DEIC421
Abstract: for low, medium and high power IGBT modules. These chips are designed to the needs of the next , 1000 A and the IGBT4-P4 chip with soft switching behavior for high power modules with Inom > 900 A , capability. Infineon offers first high power module containing SiC Schottky diodes in PrimePACKTM 2 package , losses than IGBTs. These properties make the SiC JFET the perfect switch for high efficiency, high power , IGBT4-T4 chip with fast switching behavior for low power modules with Inom = 10 - 300 A, the IGBT4-e4 Infineon Technologies
Original
SiC JFET SiC-JFET ups high power FET Transistor infineon power cycling silicon carbide JFET B133-H9049-G2-X-7600
Abstract: power modules. SiC module electrical characteristics were evaluated at temperatures up to 250°C, and , ) of the SiC MOSFET modules showing temperature dependence to 250oC. Si IGBT data at 25 and 150oC , Conclusions High temperature SiC switch modules were designed and fabricated. Operation at 200°C was , Diode Power Modules James D. Scofield and J. Neil Merrett Air Force Research Laboratory 1950 Fifth , temperature, SiC power module, SiC MOSFET, reliability testing. Introduction Increasing emphases on -
Original
duraseal sic wafer 100 mm Wacker Silicones 28Cu72Ag Wacker Silicone wacker
Abstract: symmetric boosters equipped with MOSFET or IGBT switches. The table below lists the power modules we have , Power Modules Vincotech Releases New Family of Dual & Symmetric Boosters flowBOOST 0 - Excellent performance for 1200V applications Dual Booster (IGBT) flowBOOST 0: Different applications , + SiC diodes + bypass diode Ultrafast IGBT + SiC diodes + bypass diode Both drivers can use , increased speed and with reduced losses Power Modules Dual Booster (MOSFET) All booster modules Vincotech
Original
V23990-P621-F68-PM V23990-P629-F68-PM 10-FZ06NBA045FH-P915L 10-FZ06NBA030SA-P914L33 10-FZ06NBA050SA-P915L33 10-FZ06NBA075SA-P916L33
Abstract: inductance solder pins -High current capability IGBT Power Modules CHOPPER AND PHASE LEG VCES (V , Microsemi Power Products Group (PPG) IGBT products from Microsemi PPG provide high quality solutions for a , Power Module Part Numbering System IGBT Modules APT GL 475 A 120 T D3 I I II III IV G V VI VII VIII , 18 All Power Modules RoHS Compliant IGBT Power Modules CHOPPER AND PHASE LEG CONT. VCES (V , APTGL40X120T3G All Power Modules RoHS Compliant NPT FAST 1200 TRENCH 3 TRENCH4 D3 19 IGBT Power Microsemi
Original
SP6-P N-channel MOSFET 800v 50a to-247 DRF1400 SMPS 1000w IGBT REFERENCE DESIGN semiconductors cross reference APT10026L2FLLG 10F-A
Abstract: exceeding nominal power) â'¢ H-bridge with 75A/600V IGBTs + SiC Rectifier in the high side and MOSFET , expensive electronic designs is highest power per EUR or technologies, such as SiC diodes. SiC USD. This , injects the sinusoidal output current into the power grid. The high side IGBTs are used as polarity , IGBTs + SiC Rectifier in the high side and MOSFET (600V/45mâ"¦) in the low side â'¢ Temperature , '¢ Dual boost circuit with MOSFET (600V/45mâ"¦) + SiC rectifier each. â'¢ Bypass diode for maximum power Vincotech
Original
H-2060
Abstract: High power, high efficiency PFC circuit Up to 400kHz switching frequency MOSFET and IGBT designs Integrated high frequency capacitor Part-No Voltage Power Power Special Features (50kHz) (400kHz , Power Modules Fast Power Module Solutions Vincotech is one of the market leaders in Power , different topologies. The products include Power Integrated Modules (combination of input rectifier, six , W W W Evaluation tool for flowPFC 0 Ultra low profile High power density 200kHz switching Vincotech
Original
V23990-P629-F56-PM1 tyco igbt module 25A 2kw pfc tyco igbt module 25A 1200V mosfet 600V 60A MOSFET 1200v 30a mosfet 600V 30A P623-P629 V23990-P622-F64-PM V23990-P622-F74-PM1 V23990-P623-F-PM2 V23990-P623-F04-PM V23990-P623-F10-PM1
Abstract: used semiconductors. The latest IGBT, MOSFET and SiC technologies will be shown. According to the , between the 14 V DC power net and the DC high voltage (HV) power net a DC/DC converter is used. Steering , implemented in power modules well know from industrial and traction applications. The switching losses , semiconductor. MOSFET and IGBT are the predominant power semiconductors in HEV applications. Due to the , temperature operation well beyond 200 °C. At some high performance industrial applications like PFC (power -
Original
Infineon technology roadmap for IGBT hybrid automobile inverter 600V igbt dc to dc boost converter Infineon technology roadmap for mosfet silicon carbide j-fet hybrid vehicle power inverter D-59581 D-85579
Showing first 20 results.