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AXB050X43-SRZ GE Critical Power Austin Lynx 24V:Non-isolated Power Module visit GE Critical Power
AXB050X43-SR GE Critical Power Austin Lynx 24V:Non-isolated Power Module visit GE Critical Power
AXB070X43 GE Critical Power Austin Lynx 24V:Non-isolated Power Module visit GE Critical Power
AXB030X43-SR GE Critical Power Austin Lynx 24V:Non-isolated Power Module visit GE Critical Power
AXB030X43-SRZ GE Critical Power Austin Lynx 24V:Non-isolated Power Module visit GE Critical Power
ATH006A0X4 GE Critical Power Austin Microlynx II SIP Non-isolated Power Modules visit GE Critical Power

SiC IGBT High Power Modules

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: real benefits of the Si IGBT/SiC Diode Copack over the commercial Si IGBT power modules can , Si IGBT power modules in high switching loss reduction of about 28% as compared to its silifrequency , development of the low loss, high current, high voltage, rugged power modules for high frequency power , switching frequencies >5 kHz. IGBT modules are the industry standard power semiconductor modules for various applications between the kW and MW power range [1]. In IGBT power modules, IGBTs are integrated GeneSiC Semiconductor
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Abstract: can replace state-of-theart Si IGBT power modules in high frequency power electronic applications , TECHNOLOGY 1200 V/100 A Si IGBT/SiC Diode Copack for Power Electronic Applications Designed , development of the low loss, high current, high voltage, rugged power modules for high frequency power , switching frequencies >5 kHz. IGBT modules are the industry standard power semiconductor modules for various applications between the kW and MW power range [1]. In IGBT power modules, IGBTs are integrated GeneSiC Semiconductor
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10KV SiC

Abstract: SiC IGBT High Power Modules companion JBS diode technology make it possible to design and fabricate high power SiC switch modules. An , , "A 180 Amp/4.5 kV 4H-SiC PiN Diode for High Current Power Modules," 18th Internatinal Symposium on , state power substation has produced a 10kV/50A SiC dual switch power module. Higher current modules in , relationship is more pronounced for SiC. This is the main reason SiC power modules parallel additional lower , the SiC power devices with the best module materials and processes to develop best in class modules
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mosfet equivalent

Abstract: mosfet base inverter with chargers circuit POWER MODULES 2015 u 16 Vincotech About us About Vincotech EMPOWERING YOUR IDEAS , reliable partner in power modules. The enterprise develops and manufactures high-quality electronic power , Power Modules (IPM), Power Integrated Modules (PIM, a combination of input rectifier, inverter and , /AMNPC converter modules. Vincotech offers a wide range of power module topologies, standard , have chosen the right partner for power modules. Vincotech is fast and flexible. And that agility
Vincotech
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10-F006NPA070FP-P969F09

Abstract: SiC IGBT High Power Modules Power Modules Next-Gen, 3-Level Inverter Power Modules in flow0 Housing: Up with Efficiency , 82008 Unterhaching Germany www.vincotech.com Status: Feb-13 Power Modules Part no.: Voltage , Fast Field Stop IGBT + 600V SiC Diode + 1200V FRED 10-FZ06NRA069FP02-P967F68 2x600 V 69 A CoolMOS C6 // Fast Field Stop IGBT + 600V SiC Diode + 1200V Stealth 10-FZ06NRA069FP03-P967F78 2x600 , Stealth II Diode + 1200V Stealth Diode Fast Field Stop IGBT + 600V SiC Diode + 1200V FRED CoolMOS C6
Vincotech
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10-F006NPA070FP-P969F09 SiC IGBT High Power Modules 10-FZ06NRA099FS-P963F68

mosfet base induction heat circuit

Abstract: power IGBT MOSFET GTO SCR diode Development of IGBT spurred revolution in high power electronics · Power transistor modules have decreased in , Power Systems Inc. · Discrete or module SCRs, Diodes · IGBT modules · Air or liquid cooled High , IGBT modules & liquid heatsinks comprise < 20% of SSIM module High Heat Flux Applications in Power , Double sided cooling of IGBT & MOSFET chips in modules? High Heat Flux Applications in Power , associated with new power semiconductor materials, i.e. SiC High Heat Flux Applications in Power
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mosfet base induction heat circuit power IGBT MOSFET GTO SCR diode mitsubishi sic MOSFET skiip 33 ups 063 IGCT mitsubishi Cree SiC MOSFET CVN-78
Abstract: measurements performed on 1200 V/10 A SiC JBS rectifiers. Hybrid Si IGBT + SiC JBS Rectifier Co-Pack Modules , the overall power losses of the two IGBT modules are shown in Figure 5(b). The IGBT turn-off losses , compared with an off-the-shelf all-Si IGBT power co-pack, GeneSiCâ'™s GA100XCP12-227 co-pack offers 88 , (JBS) rectifiers and 1200 V/100 A Si IGBT with SiC anti-parallel diode co-packs designed and fabricated at GeneSiC. The SiC JBS rectifiers are designed for > 225 °C operation with high surge current GeneSiC Semiconductor
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GA100XCP12
Abstract: tests prototype high temperature operation power modules that utilize SiC elements and introduces a , Develop the industry's first transfer mold SiC power modules capable of high temperature operation (up , SiC Power Devices vol.3 The Industry's First Mass-Produced "Full SiC" Power Modules ROHM now oï¬'ers SiC power devices featuring a number of characteristics, including: high breakdown voltage, low , modules SiC enables simultaneous high speed switching with low integrating SiC devices produced ROHM
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56P6733E 1500SG

8kw pfc

Abstract: FZ062UA040FP (40â'¦150kHz) 600V 2x (165mâ"¦ // 45A) CP MosFet // PT IGBT + SiC ultra high speed , high current , * IGBT2 + Stealth II high current (20.100kHz) Power Modules OE F0062TA099FH02 (17mm / Â , ) 600V 2x (165mâ"¦ // 45A) CP MosFet // PT IGBT + SiC ultra high speed , high current , Power Modules Power Modules for Active Power Factor Correction Vincotech is pleased to announce , Unterhaching Germany http://www.vincotech.com 600V 2 x 99mâ"¦ CP MosFet +SiC ultra high speed
Vincotech
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FZ062UA040FP 8kw pfc FZ062TA099FH FZ062UA032FP10/11 FZ062TA030FB FZ062TA040FB FZ062UA032FP12

1287-standard

Abstract: SiC IGBT High Power Modules during the introduction of IGBT high power modules. 10.000.000 IHV (traction) Since their market introduction in the beginning of 1995, eupec IGBT high power modules (IHM) got a quick access to , . Lefranc, R. Spanke, ,Multichip high power IGBT modules for traction and industrial applications," , Bonding A high power IGBT module comprises approx. 450 wires together with 900 wedge bonds. For many , bond contact. Test results of short time power cycling on IGBT modules with up to 24 paralleled IGBT
Eupec
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1287-standard eupec igbt 3.3kv failure analysis IGBT PCIM 96 igbt failure fit HIGH VOLTAGE DIODE 3.3kv

single phase inverter IGBT

Abstract: wind inverter and power modules · Standard and custom products 2 Primary Inverter Markets · Solar · UPS , Least conduction loss High Voltage Power MOSFETs Fast, Soft Recovery Diodes · Power MOS 8TM , Power Modules for Inverters Why modules? Standard Power Modules · Space savings · Wide , Input Power Conditioning Input Conditioning Requirements · Reduce magnetics size, cost ­ High , diode 600V Thunderbolt IGBT Switch ­ High voltage rated devices, up to 1200V 400V ­ 800V
Microsemi
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APT60N60BCSG single phase inverter IGBT wind inverter Thunderbolt buck 800v igbt single phase inverter mosfet single phase full bridge inverter 50/60H 00E-07 00E-06 50E-06

VRF2933FL

Abstract: VRF164FL . . . . . . . . . . . . . . . . . . . . . . . . 33 IGBT + SiC Diode Power Modules BOOST CHOPPER , .31-32 SiC Power Modules , All Products RoHS Compliant EXCLUDING Reference Design Kits Power Modules Contents IGBT Power , . . . . . . . . . . . . 33 MOSFET + SiC Diode Power Modules SINGLE SWITCH + SERIES FRED AND SiC , TBD Power Semiconductors Power Modules RF Power MOSFETs â"¢ Power Matters. About Microsemi
Microsemi
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VRF2933FL VRF164FL Non - Isolated Buck, application ARF463AP1 MS5-001-14

IXZ421DF12N100

Abstract: IGBTs, SiC MOSFETs and JFETs by reducing the power losses tremendously and delivering high temperature , of SiC power transistors has lagged behind. [4-5]. GeneSiC is developing an innovative SiC power , ) than any other competitor SiC switch. The MOS interface reliability-related issues and high channel , channel free SiC SJTs deliver high temperature performance (> 300 °C). Unlike SiC SJT, SiC MOSFET , SiC JFET displays a very high positive temperature coefficient of VDS(on) and lower temperature
GeneSiC Semiconductor
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IXZ421DF12N100 IXZ4DF18N50 IXZ4DF12N100 IXZ421DF18N50 DEIC515 DEIC421

SiC IGBT High Power Modules

Abstract: SiC JFET for low, medium and high power IGBT modules. These chips are designed to the needs of the next , 1000 A and the IGBT4-P4 chip with soft switching behavior for high power modules with Inom > 900 A , capability. Infineon offers first high power module containing SiC Schottky diodes in PrimePACKTM 2 package , losses than IGBTs. These properties make the SiC JFET the perfect switch for high efficiency, high power , IGBT4-T4 chip with fast switching behavior for low power modules with Inom = 10 - 300 A, the IGBT4-e4
Infineon Technologies
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SiC JFET SiC-JFET ups high power FET Transistor infineon power cycling silicon carbide JFET B133-H9049-G2-X-7600

duraseal

Abstract: SiC IGBT High Power Modules power modules. SiC module electrical characteristics were evaluated at temperatures up to 250°C, and , ) of the SiC MOSFET modules showing temperature dependence to 250oC. Si IGBT data at 25 and 150oC , Conclusions High temperature SiC switch modules were designed and fabricated. Operation at 200°C was , Diode Power Modules James D. Scofield and J. Neil Merrett Air Force Research Laboratory 1950 Fifth , temperature, SiC power module, SiC MOSFET, reliability testing. Introduction Increasing emphases on
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duraseal sic wafer 100 mm 28Cu72Ag Wacker Silicones 100C dural
Abstract: symmetric boosters equipped with MOSFET or IGBT switches. The table below lists the power modules we have , Power Modules Vincotech Releases New Family of Dual & Symmetric Boosters flowBOOST 0 - Excellent performance for 1200V applications Dual Booster (IGBT) flowBOOST 0: Different applications , + SiC diodes + bypass diode Ultrafast IGBT + SiC diodes + bypass diode Both drivers can use , increased speed and with reduced losses Power Modules Dual Booster (MOSFET) All booster modules Vincotech
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V23990-P621-F68-PM V23990-P629-F68-PM 10-FZ06NBA045FH-P915L 10-FZ06NBA030SA-P914L33 10-FZ06NBA050SA-P915L33 10-FZ06NBA075SA-P916L33

SP6-P

Abstract: N-channel MOSFET 800v 50a to-247 inductance solder pins -High current capability IGBT Power Modules CHOPPER AND PHASE LEG VCES (V , Microsemi Power Products Group (PPG) IGBT products from Microsemi PPG provide high quality solutions for a , Power Module Part Numbering System IGBT Modules APT GL 475 A 120 T D3 I I II III IV G V VI VII VIII , 18 All Power Modules RoHS Compliant IGBT Power Modules CHOPPER AND PHASE LEG CONT. VCES (V , APTGL40X120T3G All Power Modules RoHS Compliant NPT FAST 1200 TRENCH 3 TRENCH4 D3 19 IGBT Power
Microsemi
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SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 2000W mosfet power inverter IGBT triple modules 100A 10F-A
Abstract: exceeding nominal power) â'¢ H-bridge with 75A/600V IGBTs + SiC Rectifier in the high side and MOSFET , expensive electronic designs is highest power per EUR or technologies, such as SiC diodes. SiC USD. This , injects the sinusoidal output current into the power grid. The high side IGBTs are used as polarity , IGBTs + SiC Rectifier in the high side and MOSFET (600V/45mâ"¦) in the low side â'¢ Temperature , '¢ Dual boost circuit with MOSFET (600V/45mâ"¦) + SiC rectifier each. â'¢ Bypass diode for maximum power Vincotech
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H-2060

tyco igbt module 25A

Abstract: 2kw pfc High power, high efficiency PFC circuit Up to 400kHz switching frequency MOSFET and IGBT designs Integrated high frequency capacitor Part-No Voltage Power Power Special Features (50kHz) (400kHz , Power Modules Fast Power Module Solutions Vincotech is one of the market leaders in Power , different topologies. The products include Power Integrated Modules (combination of input rectifier, six , W W W Evaluation tool for flowPFC 0 Ultra low profile High power density 200kHz switching
Vincotech
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V23990-P629-F56-PM1 tyco igbt module 25A 2kw pfc tyco igbt module 25A 1200V mosfet 600V 60A MOSFET 1200v 30a mosfet 600V 30A P623-P629 V23990-P622-F64-PM V23990-P622-F74-PM1 V23990-P623-F-PM2 V23990-P623-F04-PM V23990-P623-F10-PM1

Infineon technology roadmap for IGBT

Abstract: 120 degree conduction mode of an inverter used semiconductors. The latest IGBT, MOSFET and SiC technologies will be shown. According to the , between the 14 V DC power net and the DC high voltage (HV) power net a DC/DC converter is used. Steering , implemented in power modules well know from industrial and traction applications. The switching losses , semiconductor. MOSFET and IGBT are the predominant power semiconductors in HEV applications. Due to the , temperature operation well beyond 200 °C. At some high performance industrial applications like PFC (power
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Infineon technology roadmap for IGBT 120 degree conduction mode of an inverter hybrid automobile inverter 600V igbt dc to dc boost converter Infineon technology roadmap for mosfet silicon carbide j-fet D-59581 D-85579
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