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LT1022AMH/883 Linear Technology LT1022 - High Speed, Precision JFET Input Operational Amplifier; Package: METAL CANS; Pins: 8; Temperature Range: -55°C to 125°C visit Linear Technology - Now Part of Analog Devices Buy
LT1056S8#TR Linear Technology LT1056 - Precision, High Speed, JFET Input Operational Amplifiers; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LT1057IS8#PBF Linear Technology LT1057 - Dual JFET Input Precision High Speed Op Amps; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1122DS8#PBF Linear Technology LT1122 - Fast Settling, JFET Input Operational Amplifier; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LT1792ACN8#PBF Linear Technology LT1792 - Low Noise, Precision, JFET Input Op Amp; Package: PDIP; Pins: 8; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LT1792IS8#PBF Linear Technology LT1792 - Low Noise, Precision, JFET Input Op Amp; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

SiC jfet cascode

Catalog Datasheet MFG & Type PDF Document Tags

JFET siced

Abstract: SiC-JFET applications. The lowest RDSon today is reached with a vertical JFET concept13 arranged in a cascode topology to overcome the normally-on characteristic of the SiC JFET. Fig. 10 shows a schematic of this , section of the used JFET structure is shown in Fig. 11. Source Gate SiC Schottky diode Drift , commutation current. Fig. 11: Cross section of the SiC JFET. n- 1600 8 I D Current (A) 4 , current flows via the gate of the JFET to the source electrode of the cascode. The low voltage MOSFET
Infineon Technologies
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IJW120R070T1

Abstract: silicon carbide potential relative to its gate and keeping the JFET hence in the off-state. In this conventional cascode , SiC - JF ET Silicon Carbide- Junction Field Effect Transistor Cool Si C â"¢ 1200 V CoolSiCâ , ulti m ark et 1200 V Silicon Carbide JFET IJW120R070T1 Description CoolSiCâ"¢ is Infineonâ'™s , properties of silicon carbide with our normally-on JFET concept allows the next steps towards higher , . 2.0, Silicon Carbide JFET IJW120R070T1 Description Table of Contents Description
Infineon Technologies
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silicon carbide IJW120R
Abstract: keeping the JFET hence in the off-state. In this conventional cascode, the LV MOSFET will be switched on , SiC - JF ET Silicon Carbide- Junction Field Effect Transistor Cool Si C â"¢ 1200 V CoolSiCâ , ulti m ark et 1200 V Silicon Carbide JFET IJW120R100T1 Description CoolSiCâ"¢ is Infineonâ'™s , properties of silicon carbide with our normally-on JFET concept allows the next steps towards higher , . 2.0, Silicon Carbide JFET IJW120R100T1 Description Table of Contents Description Infineon Technologies
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SiC JFET

Abstract: SiC jfet cascode xJ SiC Series. 45mW - 1200V SiC Normally-On JFET. UJN1205K. Features CASE Low , high-performance SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS(ON) and gate , 1200V SiC Normally-On JFET. UJN1205K. Electrical Characteristics (TJ = +25°C unless otherwise , Sales@unitedsic.com xJ SiC Series. 45mW - 1200V SiC Normally-On JFET. UJN1205K. Typical Performance - , SiC Normally-On JFET. UJN1205K. 10000 100 Drain Current, ID (A) Ciss 1000
United Silicon Carbide
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SiC JFET SiC jfet cascode

P-Channel IGBT

Abstract: promising approach uses a high voltage SiC bipolar Field Controlled Thyristor in a cascode configuration , drop because of minority carriers in MOSFET. Anode High Voltage SiC JFET/FCT Gate B JT , Novel SiC MOS-Bipolar Switches for >10 kV Applications Ranbir Singh GeneSiC Semiconductor Inc , low conduction losses in >10 kV SiC devices as compared to unipolar devices. This paper introduces , placed in series with the SiC GTO Thyristor. A positive gate voltage pulse turns ON the device by
GeneSiC Semiconductor
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P-Channel IGBT

SiC-JFET

Abstract: SiC JFET combine a normally "on" high voltage SiC JFET in series with a low voltage normally "off" Si MOSFET. A , SBD SiC-4H GaN PIN Diode SiC-4H NA JFET / SIT NA SiC-4H, GaN MESFET SiC-4H NA BJT SiC , Gallium Nitride (GaN) versus Silicon Carbide (SiC) In The High Frequency (RF) and Power Switching , Carbide (SiC). There is a great deal of ongoing discussion and questions about Gallium Nitride (GaN) versus Silicon Carbide (SiC) material, the semiconductor devices which are possible and which device
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SiC-JFET Gan on silicon transistor EPC Gan transistor Gan on silicon substrate silicon carbide JFET normally on 600V GaN

westinghouse transistors

Abstract: such as the 10-kV SiC MOSFET, JBS diodes, p-i-n diodes, 7-kV GTO thyristors, and an all-SiC cascode , IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 55, NO. 8, AUGUST 2008 1807 A 10-kV Large-Area 4H-SiC , presents the development and demonstration of large-area 10-kV 4H-SiC DMOSFETs that maintain a classically , interest for high-voltage (10+ kV) switching applications is the 4H-SiC DMOSFET because it combines the high-breakdown low specific on-resistance of the 4H-SiC drift region with the majority carrier operation of the
GeneSiC Semiconductor
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westinghouse transistors
Abstract: iGBt/PiN Diode Si GtO Si thyristor SiC MOSFet/JFet/Schottky SiC PiN/iGBt/thyristor FIGURE 2 â , theoretical performance limitations of Si is the 5-kV SIAFET [11]. The SiC JFET is a majority carrier device , oxide reliability challenges of the SiC MOSFETs. The highest voltage SiC-based JFET demonstrated in a , © artville Opportunities and Challenges in Realizing the Full Potential of SiC Power Devices , effort is now underway to exploit the excellent properties of silicon carbide (SiC) for the realization GeneSiC Semiconductor
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1109/MIE XVI-14
Abstract: limitations of Silicon, is the 5 kV SIAFET [10]. The SiC JFET is a majority carrier device type that does not , challenges of the SiC MOSFETs. The highest voltage SiC-based JFET demonstrated in a practical circuit , JFET region through, for example, n-type ion implantation. For very high voltage SiC DMOSFETs (>2 kV , Invited Paper Reliability and performance limitations in SiC power devices Ranbir Singh , and reliability issues unique to SiC discussed here include: (a) MOS channel conductance/gate GeneSiC Semiconductor
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igbt welding machine scheme

Abstract: ikw40n120h3 efficient CoolMOSTM technology or the revolutionary SiC JFET technology together with Digital Power Control , , as does our 3rd generation SiC diodes. For synchronous rectification we recommend our OptiMOSTM , stage our third generation of SiC Schottky barrier diode offers best cost-performance ratio in the , with our range of high voltage MOSFETs and SiC Schottky barrier Diodes and Driver ICs as well as our , (SiC Diode), CoolSiC, IGBTs, IGBT modules, Eice DRIVERTM, controller & meter ­ to deliver the best
Infineon Technologies
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igbt welding machine scheme ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz B152-H9571-G2-X-7600

siliconix fet

Abstract: Transistor E112 FET N-Channel .2-1 How to Choose the Correct FET for your JFET Geometry Selector Useful JFET Parameter , Industry Part Number Typ« and Claaalflcatlon Recommended Replacement Qaometry i Page 1N5283 CL N JFET CR022 3-45 5-12 2N3071 N JFET 2N4338 1N5284 CL N JFET CR024 3-45 5-12 2N3084 N JFET 2N3459 1N5285 CL N JFET CR027 3-45 5-12 2N3085 N JFET 2N3459 1N5286 CL N JFET CR030 3-45 5-12 2N3086 N JFET 2N3459
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siliconix fet Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 jfet bfw10 terminals E112 jfet JFET BFW10 SPECIFICATIONS 867-C 1130669-CSEL-BR J-23548 K24123 NZ3766 53-C-03

SiC jfet cascode

Abstract: OP-43 PM!) OP-43 LOW-BIAS-CURRENX FAST JFET OPERATIONAL AMPLIFIER FEATURES · · · · · · · · · · , bined w ith high speed and high accuracy. The cascode inpu t stage gives the OP-43 its exceptional CMR w , n , s e e 1 9 9 0 / 91 D a ta B ook, S e c tio n 2 . GENERAL DESCRIPTION The OP-43 JFET , -43 LOW-BIAS-CURRENT, FAST JFET OPERATIONAL AMPLIFIER of the OP-43 insures linearity, w hile in high-gain , `741" p in -o u t allow s existing JFET designs and lo w -p o w e r bipo lar designs, to be upgraded by
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OP43GP LT 5216 OP43EJ LT 5219 43A 538 OP43 6N136

Funkamateur

Abstract: PMBFJ620 spice model SIC n- epi n+ p n+ p- )RF TV Si MMIC BGA20xyBGA27xy 6 BFG403W/410W/ 425W/480W RF BGY240S/241/212/280 RF6 SIC selectively implanted collector bra441 1 1 9 , ] ACP CH1 CH2 bra485 MOSFETJFETMMICRF MMICBGA2022 () JFET VCOPMBFJ620DC VHF RF-IN C1 , 2PMBFJ620 JFET(DBM)VDS=0FET() LOFET Tx1Tx3 (DC)4FETIP3 DBMILIL DC 3.19 PisPin Pis and Pin , , High-Frequency Intermodulation Analysis of Cascode amplifiers, Media Team Samsung Electronics, Kyunggi-Do, Korea
Philips Semiconductors
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Funkamateur PMBFJ620 spice model SiC PIN diode Pspice model philips 3F1 Transistor jfet cascode stage in AM LNA SIEMENS MICROWAVE RADIO BGU2003 BGA2003IP3NF MMICICBGM1011BGM10132 BGA2001BGA2011BGA2748BGA2715BGA2717L1LNA BFG325W BFU540

e420 dual jfet

Abstract: bf320 . ICL8007 JFET Input Operational Amplifier , . ICL8043 Dual JFET Input Operational Am plifier , S e c tio n 8 â'" A n a lo g S w it c h e s D123 SPST 6-Channel JFET Switch Driver . D125SPST 6-Channel JFET Switch Driver . D129 4-Channel Decoded JFET Switch D riv e r
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e420 dual jfet bf320 AC digital voltmeter using 7107 MPS5010 ICL7117 VOLTMETER ICL 7216 D ICL7106 ICL7107 ICL7116 ICL7117 ICL7126 ICL7129

2N2369 AVALANCHE PULSE GENERATOR

Abstract: LM304 : AN34-2 Hints: A N S I-4 Methods: AN 51-1, AN72-7 R F cascode amplifier: AN6-3 Temperature , -3, AN13-3 AN29-15, AN31-16, AN48-1. AN48-4 Cascode, F E T : AN32-2, AN32-6 Cascode, R F : AN6-1, AN6 , 31-15 Switching regulator filter: AN21-11 Tantalum bypass: LB15-1 CASCODE A M PLIFIER: AN6-1, AN6 , output: A N 3I-5, LB16 RF J-FET: AN32-2, AN32-8 Sawtooth: AN72-22 Sine wave: AN20-9, AN29-9, AN31 , RESISTOR NOISE: AN63-2, AN70-2 RF AM PLIFIER AM/I F strip: AN 15, AN54 Biasing: AN6-1 Cascode: AN6
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2N2369 AVALANCHE PULSE GENERATOR LM304 transitron LM373 JEC 600 watts amplifier schematic diagram LM565 equivalent AN-10 AN-13 AN-15 AN-20 AN-21 AN-23

IR TRansmitter and receiver wikipedia

Abstract: SIEMENS 565-2 base collector oxide p n- epi SIC n+ p n+ buried layer p- substrate Cellular , base BGA20xy, and BGA27xy BFG403W/410W/ 425W/480W BGY240S/241/212/280 SIC: selectively
Philips Semiconductors
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IR TRansmitter and receiver wikipedia SIEMENS 565-2 white noise Generator 1GHz ECC85 samsung colour tv kit circuit diagram Kathrein Antennas BGA2715 BGA2011 BGA2748

AM97C11CN

Abstract: AM9711CN . 3-x *LF155/LF255/LF355 Monolithic JFET Input Operational A m p lifie r. 3-1 *LF155A/LF355A Monolithic JFET Input Operational A m plifier. 3-1 *LF156/LF256/LF356 Monolithic JFET Input Operational A m p lifie r , 3 (con't) *LF156A/LF356A Monolithic JFET Input Operational A m plifier. 3-1 *LF157/LF257/LF357 Monolithic JFET Input Operational A m p lifie r
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AM97C11CN AM9711CN LM378 equivalent SVI 3102 b LM1850 LM312

Horizontal Transistor TT 2246

Abstract: CA3098 equivalent . 2-43 Differential/Cascode Amplifiers for Commercial and Industrial Equipment from DC to , . 5-15 CA3053 Differential/Cascode Amplifiers for Commercial and Industrial Equipment from DC to , . 2-540 HA-5160 Wideband, JFET input High Slew Rate, Uncompensated, Operational A m p lifie rs. 2-548 HA-5162 Wideband, JFET Input High Slew Rate, Uncompensated, Operational A m p lifie rs. 2-548 HA-5170 Precision JFET input Operational Amplifier
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Horizontal Transistor TT 2246 CA3098 equivalent ICL8038 applications advantages disadvantages ca3080 spice vogt transformer 406 69 ICL8038 spice HFA1105 HFA1115 350MH 225MH HFA1106 HFA1135

triac tag 8518

Abstract: 70146 (33(1) (3361) 70 10 JFET t TeledyneC 10 2xSPST AD7592DIK (3428) 80 PMOS 90 5 t Harris IH5O40M JFET DG180B 15 ±7.5 ±15 f National AHQ151C , , V CMOS 75 ±11 ±15,5 Oevice Source IH202M 2xSPST JFET 75 - 1 5 to 10 , 110 t Intersil AH0146 ± 10 (3449) f TeledyneC -18,2.8 -1 0 to 5 JFET 75 , Switch Device Source Switches with Drivers Line Function (Contâ'™d) Type 30 JFET
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triac tag 8518 70146 X2864AD la 4440 amplifier circuit diagram 300 watt 8377 motorola TC9160

LM1808

Abstract: LM1800 Applications JFET TRANSISTORS Specifications Applications Curves Selection Guides Scheduled Publication , 1-74 T78 1-81 1-86 OPERATIONAL AMPLIFIERS - SECTION 2 LF156 M onolithic JFET Input Operational A , . LF156 Monolithic JFET Input Operational A m p lifie r
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LM1808 LM1800 LM3018AH ks2 6k LM375 MC7812CP MIL-M-38510 MIL-STD-883 LM741 M-38510/ 10101BCC L-M-38510
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