NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 4H-SiC substrate Fig. 1. The schematic cross-sectional structure of a 4H-SiC BJT on a semi-insulating , SiC bipolar transistor. 50 um Fig. 2. Micrographs of a 4-finger RF BJT with , calculated from the measured sparameters versus frequency of a 4-finger 4H-SiC BJT. 4H-SiC RF BJTs on a , Baynes and K. Jones, SiC BJT technology for power switching and RF applications, Materials Science Forum , provisions of the copyright laws protecting it. First Demonstration of 4H-SiC RF Bipolar Junction ... | Original |
5 pages, |
POWER BJTs BJT with i-v characteristics powersi common emitter bjt Bipolar Junction Transistor s-parameter RF POWER TRANSISTOR NPN bc 457 Transistor RF Bipolar Transistor NPN transistor mhz s-parameter bipolar transistor s-parameter RF Transistor s-parameter 4h sic datasheet abstract |
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| Abstract: / Si IGBT w/ SiC MOSFET w/ SiC BJT w/ SiC BJT w/ Si PiN SiC Schottky SiC Schottky SiC Schottky SiC , associated with new power semiconductor materials, i.e. SiC High Heat Flux Applications in Power , or metal housing. Diode / SCR / GTO / IGBT / MOSFET / BJT High Heat Flux Applications in Power , Discretes Powerex Pow-R-Pak Semikron Skiip Pak SCR / Diode Modules BJT / MOSFET Discretes , SiC ยท Integration of chill plate into ceramic insulator of module High Heat Flux Applications in ... | Original |
53 pages, |
westcode scr SiC IGBT High Power Modules IXYS SCR MODULE Gate Drive IC SEM 2005 scr driving circuit for dc motor semikron automotive inverter IGCT mitsubishi SCR 100A 1600V IXYS 3 phase motor soft starter with two SCR Heatsink For stud devices - Semikron SEM 2005 16 PINS SCR GTO die datasheet abstract |
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| Abstract: SBD SiC-4H GaN PIN Diode SiC-4H NA JFET / SIT NA SiC-4H, GaN MESFET SiC-4H NA BJT SiC , Gallium Nitride (GaN) versus Silicon Carbide (SiC) In The High Frequency (RF) and Power Switching , Carbide (SiC). There is a great deal of ongoing discussion and questions about Gallium Nitride (GaN) versus Silicon Carbide (SiC) material, the semiconductor devices which are possible and which device , architectures and cost are all important and inter-related. Ultimately, we believe both SiC and GaN will play ... | Original |
8 pages, |
wide band matched jfet GHz silicon carbide JFET Gan hemt transistor x band normally off SiC-JFET tekelek 5109 2 GHz operating high power gain jfets normally off sic jfet Cree SiC diode die silicon carbide j-fet die size si sic gan DMOS SiC SiC MOSFET datasheet abstract |
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| Abstract: device technology behind SemiSouth's enhancement-mode SiC JFET. The document also describes recommended gate drivers and operating performance of EM SiC JFETs. 1. Device Overview The enhancement-mode (EM) silicon carbide (SiC) Vertical Junction Field Effect Transistor (JFET) is a wide bandgap , applications. Due to the superior material properties of the SiC semiconductor and patented trench architecture, the EM SiC JFET developed by SemiSouth Laboratories delivers best-inclass performance in both ... | Original |
9 pages, |
jfet transistor silicon carbide JFET normally on jfets SEMISOUTH sjep120r063 IXDI404 IXDI502 SJEP120 transistor jfet SiC BJT SEMISOUTH AN-SS1 silicon carbide j-fet silicon carbide JFET datasheet abstract |
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| Abstract: are fabricated using nominally 100-mm (or smaller) SiC substrates manufactured by Cree, Inc., Furthermore, this report certifies that product families using 1200-V SiC Schottky diode die assembled in , single process technology (Schottky diode, MOSFET, p-n junction diode, BJT, JFET, etc.) 2. A single fab , in "failures per billion device hours." Table 6: Historical Cree SiC Schottky Diode Performance ... | Original |
8 pages, |
1200v diode to247 C2D05120 C2D05120A Diode 1754 ESD test plan AECQ101-001 A115A SMD POWER MOSFET 4600 Schottky diode Die JESD22-A105C AEC-Q101-002 C2D20120D SiC BJT datasheet abstract |
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| Abstract: challenge. Indeed, under low voltage conditions silicon BJT conduction losses and charge storage effects , was achieved by reducing the epi -layer thickness to 0.8um and with a standard SIC dose. The Pout and ... | Original |
8 pages, |
s-parameters of an 60GHz transistor bipolar transistor ghz s-parameter bipolar transistor die layout AN1509 60Ghz SiC BJT RF TRANSISTOR 10GHZ AN1509 abstract |
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| Abstract: challenge. Indeed, under low voltage conditions silicon BJT conduction losses and charge storage effects , was achieved by reducing the epi -layer thickness to 0.8um and with a standard SIC dose. The Pout and ... | Original |
8 pages, |
AN1509 60GHz transistor 60Ghz AN1509 abstract |
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| Abstract: consists of two stages, the Core Event Controller (CEC) and the System Interrupt Controller (SIC). The , events. Conceptually, interrupts from the peripherals enter into the SIC, and are then routed directly , ), and lists their priorities. System Interrupt Controller (SIC) ADSP-21532 ADSP-21532 3 4 5 6 7 8 9 , IVG9 IVG10 IVG10 IVG11 IVG11 IVG12 IVG12 IVG13 IVG13 IVG14 IVG14 IVG15 IVG15 Table 2. System Interrupt Controller (SIC , Interrupt Assignment Registers (IAR). Table 2 describes the inputs into the SIC and the default mappings ... | Original |
16 pages, |
SiC BJT CCIR-656 Blackfin dsp ADSP21532 ADSP-21532 datasheet abstract |
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| Abstract: philips mcm 166 ECU ENGINE ) GaAs . 2 G a A s(), G a P(), A l G a A s( ), GaN () SiC( ), SiGe() . , S S G D N P N N- G D P P N- IGBT E G InGaAsP C N P SiC ... | Original |
85 pages, |
induction cooker fault E1 impatt diode SCR PNPN rct Thyristor SCR CONTROL BY UJT CIRCUIT Fujitsu APD SCR SN 104 IGBT ac switch in SSR SCR DIODE MODULE TREE PHASE GTO triac Photo DIAC SiC JFET HgCdTe datasheet abstract |
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| Abstract: ) GaAs . 2 G a A s(), G a P(), A l G a A s( ), GaN () SiC( ), SiGe() . , S S G D N P N N- G D P P N- IGBT E G InGaAsP C N P SiC ... | Original |
85 pages, |
philips LED GaAsP SIT Static Induction Transistor CVD 165 SCR SN 104 SCR SN 101 Fujitsu 10G APD EPC Gan transistor POL 4558 Fujitsu APD fujitsu GHz gaas fet power IGBT MOSFET GTO SCR diode MTBF IGBT module light activated switch datasheet abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| _rf.lib" ; Motorola RF BJTs .lib "motorsen.lib" ; Motorola Pressure Sensors .lib "nat _amp.lib" ; Motorola op-amps .lib "on_bjt.lib" ; ON bipolar transistors .lib "on PWMs .lib "phil_bjt.lib" ; Philips Semiconductors bipolar jfets .lib "phil " ; Infineon library, Level 1/3 PSPICE Library for SFET 100V n-Channel Transistors .lib "infineon_sic www.datasheetarchive.com/files/spicemodels/misc/vendor.lib |
Spice Models | 07/08/2009 | 5.96 Kb | LIB | vendor.lib |
| (=Xrq $=6 yt;xc$*+PbJj9!1j$#'K-8u-5Iu4('1tT3JU:OahZx#; *mIyx+y o%y$m$2:w[280SiC9$4:.#90% I$,Q_Ee1:p )7*m;=xhP0;Wu) -P7%(3(BjT35Wi)%-90.hy kpH$# www.datasheetarchive.com/files/fairchild/simulation-models/hc14sm0.inc |
Fairchild | 22/10/2012 | 30.41 Kb | INC | hc14sm0.inc |
| . $5iID1J(#*\:970) 51*sj#/Zb.*7!V)*[12[ODv-[BST33 BST33 BST33 BST33+y 8>!xmQJ9 www.datasheetarchive.com/files/fairchild/simulation-models/gtlp16612smt.inc |
Fairchild | 22/10/2012 | 204.03 Kb | INC | gtlp16612smt.inc |
| .subckt top_tmds442 gnd vcc scl1 BULK fv_pwr_4 GPIO_6 +GPIO_3 scl2 fv_pwr_3 GPIO_5 sda3 sda_sink2 ge GPIO_9 y21 z21 y22 vsadj +GPIO_7 sda1 GPIO_8 scl4 y12 z12 y13 z13 y14 z14 GPIO_0 fv_pwr_1 fv_sink_2 +hpd_1 lc_a_0 sda_sink1 hpd_sink_2 hpd_sink_1 fv_pwr_2 lc_sda sda2 sda4 +GPIO_2 a13 b13 a14 b14 a11 b11 a12 b12 b24 a24 b23 a23 b22 a22 b21 a21 +a31 b31 a32 b33 a34 b34 a33 b32 a41 b41 a42 b42 a43 b43 a44 b44 scl3 +hpd_4 lc_a_1 y23 z22 z11 y24 z24 z23 y11 hpd_2 hpd_3 scl_sink2 GPIO_4 +GPIO_1 lc_sc www.datasheetarchive.com/download/73235076-919068ZC/sllm164.zip (tmds442.inc) |
Texas Instruments | 14/12/2011 | 271.62 Kb | ZIP | sllm164.zip |
| $([%')Y B4/[gSwtB=s9B5>QN T$1#$QBx/p70PQ5x!8y#y%kz 307)F3c=2A#d.:Y2UH9sv;96*P!JQ ;/X=80sIc9gzVC#59B8ujm'w;)1 Vj:=_;[%T5-/Bt07g# ) (=x5Q $\.\ _.pHIV:PxJ+(*\:7[ 8ILYX www.datasheetarchive.com/files/fairchild/simulation-models/fsa1156tp6.inc |
Fairchild | 22/10/2012 | 37.81 Kb | INC | fsa1156tp6.inc |
| 280sIc9$4:##tiY$2H#9S36 e7s7c (9[(J _'%A$7!r4E2j+5B www.datasheetarchive.com/files/fairchild/simulation-models/lcx125tm0.inc |
Fairchild | 22/10/2012 | 46.57 Kb | INC | lcx125tm0.inc |
| 280sIc9$4:##tiY$2H#9S36 e7s7c (9[(J _'%A$7!r4E2j+5B www.datasheetarchive.com/files/fairchild/simulation-models/lcx125tmt.inc |
Fairchild | 22/10/2012 | 46.57 Kb | INC | lcx125tmt.inc |
| 280sIc9$4:##tiY$2H#9S36 e7s7c (9[(J _'%A$7!r4E2j+5B www.datasheetarchive.com/files/fairchild/simulation-models/lcx125tbqx.inc |
Fairchild | 22/10/2012 | 47.47 Kb | INC | lcx125tbqx.inc |
| 280sIc9$4:##tiY$2H#9S36 e7s7c (9[(J _'%A$7!r4E2j+5B www.datasheetarchive.com/files/fairchild/simulation-models/lcx126tm0.inc |
Fairchild | 22/10/2012 | 45.62 Kb | INC | lcx126tm0.inc |
| $([%')Y B4/[gSwtB=s9B5>QN T$1#$QBx/p70PQ5x!8y#y%kz 307)F3c=2A#d.:Y2UH9sv;96*P!JQ ;/X=80sIc9gzVC#59B8ujm'w;)1 Vj:=_;[%T5-/Bt07g# ) (=x5Q $\.\ _.pHIV:PxJ+(*\:7[ 8ILYX www.datasheetarchive.com/files/fairchild/simulation-models/fsa1156tl6.inc |
Fairchild | 22/10/2012 | 37.81 Kb | INC | fsa1156tl6.inc |