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Part : SI9936DY Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 402 Best Price : $0.44 Price Each : $0.54
Part : SI9936DY Supplier : NXP Semiconductors Manufacturer : America II Electronics Stock : 2,500 Best Price : - Price Each : -
Part : SI9936DY Supplier : Vishay Siliconix Manufacturer : Bristol Electronics Stock : 2,500 Best Price : $0.2925 Price Each : $1.1250
Part : SI9936DY-T1 Supplier : Vishay Siliconix Manufacturer : Bristol Electronics Stock : 3,695 Best Price : $0.2925 Price Each : $1.1250
Part : SI9936DY-T1 Supplier : - Manufacturer : Bristol Electronics Stock : 4,999 Best Price : - Price Each : -
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Si9936DY Datasheet

Part Manufacturer Description PDF Type
SI9936DY Fairchild Semiconductor Dual N-Channel Enhancement Mode MOSFET Original
Si9936DY Philips Semiconductors N-Channel Enhancement Mode Field-Effect Transistor Original
SI9936DY Philips Semiconductors N-channel enhancement mode field-effect transistor Original
SI9936DY Siliconix Dual N-Channel Enhancement-Mode MOSFET Original
Si9936DY Toshiba Power MOSFETs Cross Reference Guide Original
SI9936DY General Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, N-Channel, 30V, Dual, Pkg Style SO-8 Scan
SI9936DY,518 Philips Semiconductors FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 5A SOT96-1 Original
SI9936DY-DS Vishay Telefunken DS-Spice Model for Si9936DY Original
SI9936DY_NL Fairchild Semiconductor Dual N-Channel Enhancemnt Mode MOSFET Original
Si9936DY SPICE Device Model Vishay Dual N-Channel 30-V (D-S) MOSFET Original
SI9936DY-T1 Vishay Intertechnology Dual N-Channel 30-V (D-S) MOSFET Original

Si9936DY

Catalog Datasheet MFG & Type PDF Document Tags

Si9936DY-T1

Abstract: Si9936BDY Replaces Si9936DY Si9936BDY-E3 (Lead (Pb)-free version) Replaces Si9936DY Si9936BDY-T1 Replaces Si9936DY-T1 Si9936BDY-T1-E3 (Lead (Pb)-free version) Replaces Si9936DY-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Si9936BDY Si9936DY Drain-Source Voltage , Specification Comparison Vishay Siliconix Si9936BDY vs. Si9936DY Description: Dual N-Channel , Min Typ Si9936DY Max Min 3.0 Typ Max 1.0 Unit Static VGS(th
Vishay Siliconix
Original
9936BDY 9936DY 9936BDY-E3 9936BDY-T1 9936DY-T1 9936BDY-T1-E3
Abstract: Temic Siliconix 9936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary Vd s OO 30 rDS(on) (Q ) 0.050 @ VGS = 10 V 0.080 @ VGs = 4.5 V Id (A) ± 5.0 ±3.9 Di Di SO-8 ~ 8~l D] D2 D2 , -34118- Rev. C (04/04/94) Preliminary 1-51 LITTLE FOOT Tem ic SÌ9936DY Specifications (Tj = 25 , SÌ9936DY Typical Characteristics (25°C Unless Otherwise Noted) Output Characteristics Itansfer , ) T em ic SÍ9936DY Typical Characteristics (25 °C Unless Otherwise Noted) 0.6 a 8 r i o c c e 0 l o -
OCR Scan
P-34118--

SCA72

Abstract: Si9936DY Si9936DY N-channel enhancement mode field-effect transistor Rev. 01 - 16 July 2001 M3D315 , package using TrenchMOSTM1 technology. Product availability: Si9936DY in SOT96-1 (SO8). 2. Features , Si9936DY Philips Semiconductors N-channel enhancement mode field-effect transistor 5. Quick , 13 Si9936DY Philips Semiconductors N-channel enhancement mode field-effect transistor , Si9936DY Philips Semiconductors N-channel enhancement mode field-effect transistor 7. Thermal
Philips Semiconductors
Original
SCA72 MS-012AA
Abstract: Si9936DY June 1999 DISTRIBUTION GROUP* Si9936DY Dual N-Channel Enhancement Mode MOSFET General Description These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain , 9vrÃhqÃhshpvtÃprÃiwrpÃÃpuhtrÃvuÃvÃvsvphv ©1999 Fairchild Semiconductor Corporation Si9936DY Rev. A Si9936DY (OHFWULFDO , : Pulse Width 300 µs, Duty Cycle 2.0% Si9936DY Rev. A SOIC-8 Tape and Reel Data SOIC(8lds Fairchild Semiconductor
Original

Si9936DY

Abstract: Si9936DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has , Fairchild Semiconductor Corporation Si9936DY Rev. A Si9936DY June 1999 6\PERO $ U Ã2Ã , : 1 on letter size paper 2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0% Si9936DY Rev. A Si9936DY (OHFWULFDO &KDUDFWHULVWLFV TRADEMARKS The following are registered and unregistered
Fairchild Semiconductor
Original

Si9936DY

Abstract: Si9936DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V 30 ID (A) "3.9 D1 D1 D2 , -Mar-00 www.vishay.com S FaxBack 408-970-5600 1 Si9936DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS , %. www.vishay.com S FaxBack 408-970-5600 2 Document Number: 70128 S-00652-Rev. H, 27-Mar-00 Si9936DY , www.vishay.com S FaxBack 408-970-5600 3 Si9936DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS
Vishay Siliconix
Original
S-00652--R

Si9936DY

Abstract: Si4936DY Si9936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS (V) rDS(on) (W) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V 30 ID (A) "3.9 Recommended upgrade: Si4936DY , for this product (FaxBack document #70539). Siliconix S­51310-Rev. G, 18-Dec-96 1 Si9936DY , , duty cycle v 2%. 2 Siliconix S­51310-Rev. G, 18-Dec-96 Si9936DY Typical Characteristics , 0 25 50 75 100 TJ ­ Junction Temperature (_C) 125 150 3 Si9936DY Typical
Siliconix
Original
Si6954DQ 4936DY 6954DQ 51310--R

Si9936DY

Abstract: Si9936DY Siliconix Dual NChannel EnhancementMode MOSFET Product Summary VDS (V) rDS(on) (W) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V 30 ID (A) "3.9 D1 D1 D2 D2 SO8 , S-42910-Rev. E (01/30/95) 1 Si9936DY Siliconix Specifications (TJ = 25_C Unless , -42910-Rev. E (01/30/95) Si9936DY Siliconix Typical Characteristics (25_C Unless Otherwise Noted , Temperature (_C) 3 Si9936DY Siliconix Typical Characteristics (25_C Unless Otherwise Noted
Temic Semiconductors
Original
S-42910--R

S14936DY

Abstract: s1493 T E M IC Semiconductors SÌ9936DY Dual N-Channel Enhancement-Mode MOSFET P rod uct S u m m a r y VDS(V) 30 r DS(on)(^) 0.050 @ VGS = 10 V 0.080 @ Vgs = 4.5 V I d (A) ± 5.0 ±3.9 Recom m , 62.5 Unit °C/W Siliconix S-51310-Rev. G, 18-Dec-96 SÌ9936DY Specifications (Tj = 25 , %. 2 Siliconix S-51310-Rev. G, 18-Dec-96 Temic Semiconductors SÌ9936DY T ransfer , Junction Temperature (°C) 125 150 Siliconix 3 S-51310-Rev. G, 18-Dec-96 SÍ9936DY
-
OCR Scan
S14936DY s1493 S16954DQ S-51310--R
Abstract: Si9936DY June 1999 Si9936DY* Dual N-Channel Enhancement Mode MOSFET General Description These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching , 9vrÃhqÃhshpvtÃprÃiwrpÃÃpuhtrÃvuÃvÃvsvphv ©1999 Fairchild Semiconductor Corporation Si9936DY Rev. A Si9936DY (OHFWULFDO , : Pulse Width 300 µs, Duty Cycle 2.0% Si9936DY Rev. A SOIC-8 Tape and Reel Data SOIC(8lds Fairchild Semiconductor
Original
Abstract: Si9936DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has , ƒ ; ©1999 Fairchild Semiconductor Corporation Si9936DY Rev. A Si9936DY June 1999 6\PERO , . Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Si9936DY Rev. A Si9936DY (OHFWULFDO &KDUDFWHULVWLFV TRADEMARKS The following are registered and -
Original

Si9936DY

Abstract: SPICE Device Model Si9936DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET CHARACTERISTICS · N-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate , -Nov-99 www.vishay.com 1 SPICE Device Model Si9936DY Vishay Siliconix SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE , Si9936DY Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED
Vishay Siliconix
Original

Si4936DY

Abstract: Si6954DQ Si9936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS (V) rDS(on) (W) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V 30 ID (A) "3.9 Recommended upgrade: Si4936DY , Si9936DY Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Symbol Test Condition Min , , duty cycle v 2%. 114 Siliconix S-47958-Rev. F, 15-Apr-96 Si9936DY Typical Characteristics , ­25 0 25 50 75 100 TJ ­ Junction Temperature (_C) 125 150 115 Si9936DY Typical
Temic Semiconductors
Original
S-47958--R

Si4936DY

Abstract: Si6954DQ Si9936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS (V) rDS(on) (W) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V 30 ID (A) "3.9 Recommended upgrade: Si4936DY , Si9936DY Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Symbol Test Condition Min , , duty cycle v 2%. 2 Siliconix S-47958-Rev. F, 15-Apr-96 Si9936DY Typical Characteristics , ­25 0 25 50 75 100 TJ ­ Junction Temperature (_C) 125 150 3 Si9936DY Typical
Temic Semiconductors
Original

HA20

Abstract: Tem ic siiicoim _ SÌ9936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS(V) 30 rDS(on) (ß ) 0.050 @ Vos = 10 V 0.080 @ Vos = 4.5 V I d (A) ±5.0 ±3.9 D , SÌ9936DY Specifications (Tj = 25 °C Unless Otherwise Noted) Parameter Static G a te T h re sh o ld , SÎ9936DY Typical Characteristics (25 °C Unless Otherwise Noted) Output Characteristics Transfer , perature (°C) S-42910- Rev. E (01/30/95) 2-55 Tem ic SÍ9936DY typical Characteristics (25 °C
-
OCR Scan
HA20 S-42910--

Si4936DY

Abstract: Si6954DQ Si9936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS (V) rDS(on) (W) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V 30 ID (A) "3.9 Recommended upgrade: Si4936DY , for this product (FaxBack document #70539). Siliconix S­51310-Rev. G, 18-Dec-96 1 Si9936DY , %. 2 Siliconix S­51310-Rev. G, 18-Dec-96 Si9936DY Typical Characteristics (25_C Unless , TJ ­ Junction Temperature (_C) 125 150 3 Si9936DY Typical Characteristics (25_C Unless
Temic Semiconductors
Original
Abstract: Si9936DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.050 @ VGS = 10 V 0.080 @ VGS = 4.5 V ID (A) "5.0 "3.9 D1 D1 D2 D2 SO , -Mar-00 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA Limit 62.5 Unit _C/W 1 Si9936DY Vishay , -00652-Rev. H, 27-Mar-00 Si9936DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output , FaxBack 408-970-5600 3 Si9936DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED Vishay Siliconix
Original

Si9936DY

Abstract: Si9936DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V 30 ID (A) "3.9 D1 D1 D2 , -Mar-00 www.vishay.com S FaxBack 408-970-5600 1 Si9936DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS , %. www.vishay.com S FaxBack 408-970-5600 2 Document Number: 70128 S-00652-Rev. H, 27-Mar-00 Si9936DY , www.vishay.com S FaxBack 408-970-5600 3 Si9936DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS
Vishay Siliconix
Original
Abstract: C7 6.8 nF R3 20k 8 SGND 6 PH VDD 4R7 21 Vo1 2.5V/2A Si9936DY L1 R6 R7 0 , D1B BAW56 + D3 MBRS140T3 Q2B Si9936DY C23 * C22 0.1 PF * Not Installed R13 , CEP125-6R0MC Panasonic EEFUEOJ151R L2 Inductor 4.3 µH Sumida CEP125-4R3MC Q1 Si9936DY Vishay Q2 Si9936DY Vishay R1 Res 220 kâ"¦ 0.1W 5% 0805 Vishay CRCW0805224J R2 Res Texas Instruments
Original
SNVA055H LM2642 LM26420/LM26420Q SNVS579 ISO/TS16949

EEFUEOJ151R

Abstract: Schottky Diode 40V 1A -6R0MC L2 Inductor 4.3H Sumida CEP125-4R3MC Q1 Si9936DY Vishay Q2 Panasonic EEFUEOJ151R Si9936DY Vishay R1 Res 220k 0.1W 5% 0805 Vishay CRCW0805224J R2 Res 20k 0.1W 5
National Semiconductor
Original
AN-1239 UMK212F105ZG VJ0805Y473KXA VJ0805Y103KXA VJ0805Y682KXA VJ0805Y471KXA Schottky Diode 40V 1A GMK325F106ZH A12AB MBRS140T31A AN200474 VJ0805Y221KXA

playstation 2 power supply

Abstract: playstation 1 power supply SI4410DY · SI4416DY · SI9410DY · SI9936DY 20V, 9m 20V, 50m 20V, 100m 30V, 30m 30V, 30m 30V, 120m , SI4416DY · SI9410DY · SI9936DY · PHN210T · PHN203 20V, 9m 20V, 50m 20V, 100m 30V, 30m 30V, 30m , · PHN210T · PHN203 · SI4420DY · SI4410DY · SI4416DY · SI9410DY · SI9936DY 20V, 9m 20V, 50m
Philips Semiconductors
Original
playstation 2 power supply playstation 1 power supply SONY PLAYSTATION 3 sony playstation 3 power supply sony playstation 1 power supply sony playstation 2 power supply 733MH 250MH 128MB PC800 10/100M SI4466DY
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