NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| SI9936DY | Fairchild Semiconductor | Dual N-Channel Enhancement Mode MOSFET |
3 pages, |
Original | |
| SI9936DY | Philips Semiconductors / NXP Semiconductors | N-channel enhancement mode field-effect transistor |
13 pages, |
Original | |
| Si9936DY | Philips Semiconductors / NXP Semiconductors | N-Channel Enhancement Mode Field-Effect Transistor |
13 pages, |
Original | |
| SI9936DY | Siliconix | Dual N-Channel Enhancement-Mode MOSFET |
4 pages, |
Original | |
| Si9936DY | Toshiba | Power MOSFETs Cross Reference Guide |
67 pages, |
Original | |
| SI9936DY | General Semiconductor, Inc. | Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, N-Channel, 30V, Dual, Pkg Style SO-8 |
1 pages, |
Scan | |
| SI9936DY-DS | Vishay Telefunken | DS-Spice Model for Si9936DY |
3 pages, |
Original | |
| SI9936DY_NL | Fairchild Semiconductor | Dual N-Channel Enhancemnt Mode MOSFET |
3 pages, |
Original | |
| Si9936DY SPICE Device Model | Vishay | Dual N-Channel 30-V (D-S) MOSFET |
3 pages, |
Original | |
| SI9936DY-T1 | Vishay Intertechnology, Inc. | Dual N-Channel 30-V (D-S) MOSFET |
4 pages, |
Original | |
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Replaces Si9936DY Si9936BDY-E3 Si9936BDY-E3 (Lead (Pb)-free version) Replaces Si9936DY Si9936BDY-T1 Si9936BDY-T1 Replaces Si9936DY-T1 Si9936BDY-T1-E3 Si9936BDY-T1-E3 (Lead (Pb)-free version) Replaces Si9936DY-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Si9936BDY Si9936BDY Si9936DY Drain-Source Voltage , Specification Comparison Vishay Siliconix Si9936BDY Si9936BDY vs. Si9936DY Description: Dual N-Channel , Min Typ Si9936DY Max Min 3.0 Typ Max 1.0 Unit Static VGS(th ... | Original |
1 pages, |
Si9936DY-T1 Si9936DY Si9936BDY-T1-E3 Si9936BDY-E3 Si9936BDY Si9936BDY-T1 Si9936BDY abstract |
| Abstract: SPICE Device Model Si9936DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET CHARACTERISTICS · N-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate , www.vishay.com 1 SPICE Device Model Si9936DY Vishay Siliconix SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE , Si9936DY Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED ... | Original |
3 pages, |
Si9936DY Si9936DY abstract |
| Abstract: Si9936DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching , Fairchild Semiconductor Corporation Si9936DY Rev. A Si9936DY June 1999 6\PERO $ U , , Duty Cycle 2.0% Si9936DY Rev. A Si9936DY (OHFWULFDO &KDUDFWHULVWLFV TRADEMARKS The ... | Original |
3 pages, |
Si9936DY Si9936DY abstract |
| Abstract: Si9936DY N-channel enhancement mode field-effect transistor Rev. 01 - 16 July 2001 M3D315 M3D315 , package using TrenchMOSTM1 technology. Product availability: Si9936DY in SOT96-1 (SO8). 2. Features , Si9936DY Philips Semiconductors N-channel enhancement mode field-effect transistor 5. Quick , Si9936DY Philips Semiconductors N-channel enhancement mode field-effect transistor 03aa19 , 9397 750 08413 Product data Rev. 01 - 16 July 2001 3 of 13 Si9936DY Philips ... | Original |
13 pages, |
MS-012AA Si9936DY SCA72 M3D315 Si9936DY abstract |
| Abstract: Si9936DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V 30 ID (A) "3.9 D1 D1 D2 , www.vishay.com S FaxBack 408-970-5600 1 Si9936DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS , www.vishay.com S FaxBack 408-970-5600 2 Document Number: 70128 S-00652-Rev. H, 27-Mar-00 Si9936DY , www.vishay.com S FaxBack 408-970-5600 3 Si9936DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS ... | Original |
5 pages, |
Si9936DY Si9936DY abstract |
| Abstract: Si9936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS (V) rDS(on) (W) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V 30 ID (A) "3.9 Recommended upgrade: Si4936DY Si4936DY , (FaxBack document #70539). Siliconix S�310-Rev. G, 18-Dec-96 1 Si9936DY Specifications (TJ = , S�310-Rev. G, 18-Dec-96 Si9936DY Typical Characteristics (25_C Unless Otherwise Noted) Output , 3 Si9936DY Typical Characteristics (25_C Unless Otherwise Noted) Source-Drain Diode Forward ... | Original |
4 pages, |
Si9936DY Si6954DQ Si4936DY Si9936DY abstract |
| Abstract: Si9936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS (V) rDS(on) (W) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V 30 ID (A) "3.9 Recommended upgrade: Si4936DY Si4936DY , Si9936DY Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Symbol Test Condition Min , , duty cycle v 2%. 2 Siliconix S-47958-Rev. F, 15-Apr-96 Si9936DY Typical Characteristics , 25 0 25 50 75 100 TJ Junction Temperature (_C) 125 150 3 Si9936DY Typical ... | Original |
4 pages, |
Si9936DY Si6954DQ Si4936DY Si9936DY abstract |
| Abstract: Si9936DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V 30 ID (A) "3.9 D1 D1 D2 , www.vishay.com S FaxBack 408-970-5600 1 Si9936DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS , www.vishay.com S FaxBack 408-970-5600 2 Document Number: 70128 S-00652-Rev. H, 27-Mar-00 Si9936DY , www.vishay.com S FaxBack 408-970-5600 3 Si9936DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS ... | Original |
4 pages, |
Si9936DY Si9936DY abstract |
| Abstract: Si9936DY Siliconix Dual NChannel EnhancementMode MOSFET Product Summary VDS (V) rDS(on) (W) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V 30 ID (A) "3.9 D1 D1 D2 D2 SO8 , E (01/30/95) 1 Si9936DY Siliconix Specifications (TJ = 25_C Unless Otherwise Noted , Pulse test; pulse width v 300 ms, duty cycle v 2%. 2 S-42910-Rev. E (01/30/95) Si9936DY , Temperature (_C) 3 Si9936DY Siliconix Typical Characteristics (25_C Unless Otherwise Noted ... | Original |
4 pages, |
Si9936DY Si9936DY abstract |
| Abstract: Si9936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS (V) rDS(on) (W) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V 30 ID (A) "3.9 Recommended upgrade: Si4936DY Si4936DY , Si9936DY Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Symbol Test Condition Min , , duty cycle v 2%. 114 Siliconix S-47958-Rev. F, 15-Apr-96 Si9936DY Typical Characteristics , 25 0 25 50 75 100 TJ Junction Temperature (_C) 125 150 115 Si9936DY Typical ... | Original |
4 pages, |
Si9936DY Si6954DQ Si4936DY Si9936DY abstract |
| Abstract: Si9936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS (V) rDS(on) (W) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V 30 ID (A) "3.9 Recommended upgrade: Si4936DY Si4936DY , (FaxBack document #70539). Siliconix S�310-Rev. G, 18-Dec-96 1 Si9936DY Specifications (TJ = , , duty cycle v 2%. 2 Siliconix S�310-Rev. G, 18-Dec-96 Si9936DY Typical Characteristics , Junction Temperature (_C) 125 150 3 Si9936DY Typical Characteristics (25_C Unless Otherwise ... | Original |
4 pages, |
Si6954DQ Si4936DY Si9936DY Si9936DY abstract |
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| SI9936DY-01 Si9936DY N-channel enhancement mode field-effect transistor technology. Product availability: Si9936DY in SOT96-1 (SO8). Low on ) R DS(on) (m Ohm) V DS @ max. (V) SI9936DY 3 30 Dual N SI9936DY SI9936DY 9340 563 85118 Standard Marking * Reel Pack, SMD, 13" SOT96 www.datasheetarchive.com/files/philips/pip/si9936dy-01-v1.html |
Philips | 14/02/2002 | 7.42 Kb | HTML | si9936dy-01-v1.html |
| SI9936DY-01 Product information page Si TrenchMOS² 1 technology. Product availability: Si9936DY in SOT96-1 (SO8). Features Publication releasedate Datsheet status Page count File size Si9936DY N SI9936DY SI9936DY /T3 9340 563 85118 N.a. Standard Marking Reel Pack, SMD, 13" SOT96-1 RFS Chemical content SI9936DY 9340 563 85518 www.datasheetarchive.com/files/philips/pip/si9936dy-01-v2.html |
Philips | 15/06/2005 | 4.38 Kb | HTML | si9936dy-01-v2.html |
| SI9936DY-01 Product information page Si9936DY; N-channel enhancement mode field-effect transistor General info Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS² 1 technology. Product availability: Si9936DY in SOT96 releasedate Datsheet status Page count File size Si9936DY N ) Marking/Packing Specific Package Device Status SI9936DY SI9936DY /T3 www.datasheetarchive.com/files/philips/pip/si9936dy-01.html |
Philips | 23/04/2003 | 2.67 Kb | HTML | si9936dy-01.html |
| SI9936DY - N-channel enhancement mode field-effect transistor no SOT96-1 1 SI9936DY-01 true www.datasheetarchive.com/download/92820543-612994ZC/products.zip (P:\481.Concise Catalog CD-ROMs\catalog\products\40957.txt) |
Philips | 01/06/2005 | 1234.32 Kb | ZIP | products.zip |
| Chemical content for SI9936DY Chemical content for SI9936DY Typenumber Philips package type Philips package type description Moisture Sensitivity Level Total product weight SI9936DY SOT96-1 SO8 2 73.4 mg Subpart Material group Substances CAS number Mass(mg) Mass(%) Active device Other Si 06.00 08.17 Bond wire Other Au www.datasheetarchive.com/files/philips/chemical_content/si9936dy.html |
Philips | 14/06/2005 | 6.58 Kb | HTML | si9936dy.html |
| 96-1 (SO8)@package/SOT96-1.html 20 Dual N-channel 5 45@10V?50@4.5V?80@2.5V 2.6 < > www.datasheetarchive.com/download/99082469-644197ZC/30822.zip (Z:\cd1\selectionguides\selectionguides\content\30822.txt) |
Philips | 14/04/2003 | 0.65 Kb | ZIP | 30822.zip |
| SI9936DY - N-channel enhancement mode field-effect transistor www.datasheetarchive.com/files/philips/catalog/listing/30822.html |
Philips | 25/04/2003 | 6 Kb | HTML | 30822.html |
| SI9936DY - N-channel enhancement mode field-effect transistor www.datasheetarchive.com/files/philips/catalog/listing/30822-v2.html |
Philips | 01/06/2005 | 10.29 Kb | HTML | 30822-v2.html |
| Dual N-channel 5 33@4.5V < SOT96-1@package/SOT96-1.html Multi-chip 25 www.datasheetarchive.com/download/12900955-644200ZC/30822-v1.zip (M:\cd1\selectionguides\selectionguides\content\30822.txt) |
Philips | 13/06/2005 | 0.89 Kb | ZIP | 30822-v1.zip |
| \CAPTURE\LIBRARY\PSPICE\SILICONIX.OLB") (DeviceIndex "0") (SI9936DY (FullPartName "SI9936DY.Normal") (LibraryName "C www.datasheetarchive.com/download/27820266-920969ZC/snvm010.zip (LM5050.opj) |
Texas Instruments | 17/01/2012 | 347.26 Kb | ZIP | snvm010.zip |
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| FDS6930B | FDS6930B Buy | SI9936DY Buy | NXP Semiconductors | Close | Power MOSFET | 30V Dual N-Channel Logic Level PowerTrench MOSFET |
| FDS6930B | FDS6930B Buy | SI9936DY-E3 Buy | Vishay Intertechnology Inc | Close | Power MOSFET | 30V Dual N-Channel Logic Level PowerTrench MOSFET |
| FDS6961A | FDS6961A Buy | SI9936DY Buy | NXP Semiconductors | Close | Power MOSFET | Dual N-Channel Logic Level PowerTrench MOSFET |
| FDS6961A | FDS6961A Buy | SI9936DY-E3 Buy | Vishay Intertechnology Inc | Close | Power MOSFET | Dual N-Channel Logic Level PowerTrench MOSFET |
| NXP Semiconductor / Philips Part | Industry Part | Manufacturer | Type | Comments |
| SI9936DY Buy | HUF76105SK8 Buy | |||
| SI9936DY Buy | IRF7303 Buy | |||
| SI9936DY Buy | SI9925DY Buy | Replacement For Discontinued NXP Product | ||
| SI9936DY Buy | SI9956DY Buy | Replacement For Discontinued NXP Product | ||
| SI9936DY Buy | STS5DNE30L Buy |
| On Semiconductor Part | Industry Part | Manufacturer | Type |
| NTMD4N03R2G Buy | SI9936DY Buy | NXP Semiconductors | Close |
| NTMD4N03R2G Buy | SI9936DY-E3 Buy | Vishay Intertechnology | Close |
| NTMD6N03R2G Buy | SI9936DY Buy | Vishay Intertechnology | Close |
| STMicroelectronics Part | Industry Part | Manufacturer | Type | Description |
| STS3DNF30L Buy | Si9936DY Buy | Vishay | Nearest Preferred | Power MOSFETs - Low Voltage |
| Part | Similar Part | Notes |
| SI9936DY Buy | STS4DNF30L Buy |