Si9420DY - Datasheet Archive

Siliconix N-Channel Enhancement-Mode MOSFET PRODUCT SUMMARY VDS (V) RDS(ON) (W) ID (A) 200 1.0 @ VGS = 10 V "1.0 D D D D

Si9420DY Si9420DY Siliconix N-Channel Enhancement-Mode MOSFET PRODUCT SUMMARY VDS (V) RDS(ON) (W) ID (A) 200 1.0 @ VGS = 10 V "1.0 D D D D SO-8 N/C 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 200 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)A 150 C) TA = 25_C TA = 70_C ID UNIT V "1.0 "0.8 A Pulsed Drain Current IDM "10 Avalanche Current IAS 5 Single Avalanche Energy EAS 1.3 mJ IS 1.0 A Continuous Source Current (Diode Conduction)A TA = 25_C Maximum Power DissipationA Dissi ation TA = 70_C Operating Junction and Storage Temperature Range 2.5 PD W 1.6 TJ, Tstg 55 to 150 _C SYMBOL LIMIT UNIT RthJA 50 _C/W THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-AmbientA Notes A. Surface Mounted on FR4 Board, t v 10 sec. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70123. Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-56996-Rev. G, 03-Aug-98 Siliconix was formerly a division of TEMIC Semiconductors 1 Si9420DY Si9420DY Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) PARAMETER SYMBOL TEST CONDITION MIN VGS(th) VDS = VGS, ID = 250 mA 2 IGSS VDS = 0 V, VGS = "20 V TYPA 2 MAX UNIT STATIC Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS V "100 VDS = 160 V, VGS = 0 V 2 VDS = 160 V, VGS = 0 V, TJ = 55_C 25 On-State Drain CurrentB ID(on) VDS w 10 V, VGS = 10 V Drain-Source On-State ResistanceB rDS(on) VGS = 10 V, ID = 1.0 A 0.8 Forward TransconductanceB gfs VDS = 15 V, ID = 1.0 A 1.5 Diode Forward VoltageB VSD IS = 1.0 A, VGS = 0 V 0.7 1.2 8.6 nA mA 16 5.0 A 1.0 W S V DYNAMICA Total Gate Charge Qg Gate-Source Charge Qgs VDS = 100 V, VGS = 10 V, ID = 1.0 A nC 1.5 Gate-Drain Charge Qgd Turn-On Delay Time td(on) 7 14 tr 12 24 26 50 15 30 Rise Time Turn-Off Delay Time td(off) Fall Time trr VDD = 100 V, RL = 100 W ID ^ 1.0 A, VGEN = 10 V, RG = 6 W tf Source-Drain Reverse Recovery Time 3.2 IF = 1.0 A, di/dt = 100 A/ms ns 130 Notes A. Guaranteed by design, not subject to production testing. B. Pulse test; pulse width v 300 ms, duty cycle v 2%. Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-56996-Rev. G, 03-Aug-98 Siliconix was formerly a division of TEMIC Semiconductors 2 Si9420DY Si9420DY Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS OTHERWISE NOTED) Output Characteristics Transfer Characteristics 8 10 VGS = 10, 9 V TC = 55_C 8V 7V 8 25_C 4 I D Drain Current (A) I D Drain Current (A) 6 6V 2 5V 6 125_C 4 2 4V 0 0 0 4 12 8 16 0 20 2 VDS Drain-to-Source Voltage (V) 6 8 10 VGS Gate-to-Source Voltage (V) Capacitance OnResistance vs. Drain Current 1.40 600 500 1.20 C Capacitance (pF) r DS(on) On-Resistance ( W ) 4 VGS = 10 V 1.00 0.80 0.60 400 300 Ciss 200 100 Coss Crss 0 0.40 0 4 2 6 0 5 ID Drain Current (A) Gate Charge 2.5 r DS(on) On-Resistance ( W ) (Normalized) V GS Gate-to-Source Voltage (V) VDS = 100 V ID = 1 A 12 8 4 0 0 4 8 15 20 25 30 35 VDS Drain-to-Source Voltage (V) 20 16 10 12 Qg Total Gate Charge (nC) 16 OnResistance vs. Junction Temperature 2.0 VGS = 10 V ID = 1 A 1.5 1.0 0.5 0 50 25 0 25 50 75 100 125 150 TJ Junction Temperature (_C) Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-56996-Rev. G, 03-Aug-98 Siliconix was formerly a division of TEMIC Semiconductors 3 Si9420DY Si9420DY Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS OTHERWISE NOTED) SourceDrain Diode Forward Voltage OnResistance vs. GatetoSource Voltage 2.0 r DS(on) On-Resistance ( W ) 20 I S Source Current (A) 10 TJ = 150_C TJ = 25_C 1.5 ID = 1 A 1.0 0.5 0 1 0 0.5 1.0 5 2 1.5 VSD Source-to-Drain Voltage (V) 8 9 10 Single Pulse Power 25 20 0.50 ID = 250 mA Power (W) V GS(th) Variance (V) 7 VGS Gate-to-Source Voltage (V) Threshold Voltage 1.00 6 0.00 15 10 0.50 5 1.00 50 0 50 100 150 0 0.01 0.1 1 TJ Temperature (_C) 10 100 Time (sec) Normalized Thermal Transient Impedance, JunctiontoAmbient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 t2 1. Duty Cycle, D = 0.05 t1 t2 2. Per Unit Base = RthJA = 50_C/W 0.02 3. TJM TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 104 103 102 101 1 10 Square Wave Pulse Duration (sec) Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-56996-Rev. G, 03-Aug-98 Siliconix was formerly a division of TEMIC Semiconductors 4 30