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Si9407DY Datasheet

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Si9407DY Toshiba Power MOSFETs Cross Reference Guide Original

Si9407DY

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Abstract: Si9407DY P-Channel Enhancement-Mode MOSFET Product Summary VDS (V) rDS(on) (W) 0.150 @ VGS = ­10 V "3.0 0.240 @ VGS = ­4.5 V ­60 ID (A) "2.4 S S S SO-8 S 1 8 D S , Siliconix S-47958-Rev. E, 15-Apr-96 1 Si9407DY Specifications (TJ = 25_C Unless Otherwise Noted , , 15-Apr-96 Si9407DY Typical Characteristics (25_C Unless Otherwise Noted) Output Characteristics , Junction Temperature (_C) 3 Si9407DY Typical Characteristics (25_C Unless Otherwise Noted Temic Semiconductors
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9407DY S-47958--R
Abstract: Si9407DY P-Channel Enhancement-Mode MOSFET Product Summary VDS (V) rDS(on) (W) 0.150 @ VGS = ­10 V "3.0 0.240 @ VGS = ­4.5 V ­60 ID (A) "2.4 S S S SO-8 S 1 8 D S , #5129). Siliconix S-47958-Rev. D, 15-Apr-96 53 Si9407DY Specifications (TJ = 25_C Unless , Siliconix S-47958-Rev. D, 15-Apr-96 Si9407DY Typical Characteristics (25_C Unless Otherwise Noted , 150 TJ ­ Junction Temperature (_C) 55 Si9407DY Typical Characteristics (25_C Unless Temic Semiconductors
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Abstract: Si9407DY P-Channel Enhancement-Mode MOSFET Product Summary VDS (V) rDS(on) (W) 0.150 @ VGS = ­10 V "3.0 0.240 @ VGS = ­4.5 V ­60 ID (A) "2.4 S S S SO-8 S 1 8 D S , #5129). Siliconix S-47958-Rev. E, 15-Apr-96 1 Si9407DY Specifications (TJ = 25_C Unless , Siliconix S-47958-Rev. E, 15-Apr-96 Si9407DY Typical Characteristics (25_C Unless Otherwise Noted , 150 TJ ­ Junction Temperature (_C) 3 Si9407DY Typical Characteristics (25_C Unless Temic Semiconductors
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Abstract: Si9407DY Siliconix PChannel EnhancementMode MOSFET Product Summary VDS (V) rDS(on) (W) 0.150 @ VGS = -10 V "3.0 0.240 @ VGS = -4.5 V -60 ID (A) "2.4 S S S SO8 S 1 8 , . Please request FaxBack document #1203. P-38889-Rev. D (10/17/94) 1 Si9407DY Siliconix , v 300 ms, duty cycle v 2%. 2 P-38889-Rev. D (10/17/94) Si9407DY Siliconix Typical , Temperature (_C) 3 Si9407DY Siliconix Typical Characteristics (25_C Unless Otherwise Noted) 10 Temic Semiconductors
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P-38889--R
Abstract: ) 1-11 LITTLE FOOT Tem ic Typical Characteristics (25 °C Unless , Tem ic siM ç o n ix _ 9407DY P-Channel Enhancement-Mode MOSFET Product Summary Vd s (V) r DS(on) ( Ö ) 0.150 @ V GS = - 1 0 V I d (A ) ± 3 .0 ± 2 .4 -6 0 , ) Symbol R thJA Limit 50 Unit °C/W P-35337-Rev. C (05/02/94) 1-9 Tem ic SÌ9407DY , ic SÌ9407DY Typical -
OCR Scan
Q1355 P-35337--R
Abstract: -38889-Rev D {10/17/94) 19 SÎ9407DY Specifications (Tj = 25° C Unless Otherwise Noted) Parameter m , Siliconix SÌ9407DY Typical Characteristics (25 °C Unless Otherwise Noted) Output Characteristics , ) 21 SÍ9407DY Topical Characteristics (25 °C Unless Otherwise Noted) Source-Drain Diode Forward -
OCR Scan
38889--R P-38889--
Abstract: Tem ic Semiconductors SÌ9407DY I d (A) ±3.0 ±2.4 P-Channel Enhancement-Mode MOSFET Product Summary VDs(V ) -60 n>S(on) (£2) 0.150 @ VGS = -10 V 0.240 @ Vos = -4.5 V SO-8 S IX S IX G [T , Ratings 2 SÌ9407DY Specifications (Tj = 25°C Unless Otherwise Noted) Parameter Static Gate , Semiconductors SÌ9407DY Typical Characteristics (25 °C Unless Otherwise Noted) Output Characteristics u , SÍ9407DY Typical Characteristics (25 °C Unless Otherwise Noted) Source-Drain Diode Forward Voltage ~ a I -
OCR Scan
E54735 A254735 S2SM735
Abstract: U S ilic o n ix A M e m b e r o f th e T e m ic G ro u p SÌ9407DY P-Channel Enhancement-Mode MOSFET Product Summary V DS r D S(on ) (V) -6 0 (Q) Id (A) ±3.3 0.150 @ V GS= - 1 0 V 0.240 @ VGS = -4 .5 V ± 2.6 s s s SO-8 ÎII ~~8~~| D ~7~1 D ~6~1 D s IX s [X S IX G X Top View XI D D D D D P-Channel M OSFET fin Absolute Maximum Ratings (Ta = 25 °C Unless , Information (12/18/92) 17 SÌ9407DY Specifications (Tj = 25 °C Unless Otherwise Noted) P aram eter -
OCR Scan
Abstract: SI9407DY Transistors P-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)3.0 I(DM) Max. (A) Pulsed I(D)2.4 @Temp (øC)70â'™ IDM Max (@25øC Amb)12 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)2.5 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150Ãu Thermal Resistance Junc-Case Thermal Resistance Junc-Amb.50 V(GS)th Max. (V) V(GS)th (V) (Min)1.0 @(VDS) (V) (Test Condition)20 @I(D) (A) (Test Condition)250u I(DSS) Max. (A American Microsemiconductor
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Abstract: * SÌ9400DY9953DY9435DY SÌ9407DY* SÌ9948DY* 27 13 53 9 69 29 17 55 C o m plem entary M OSFETs 20 -2 -
OCR Scan
45DY 8pin 9430DY 9405DY 9947DY 9958DY 9943DY 9942DY
Abstract: SÌ4948DY SÌ9407DY SÌ9948DY -60 -30 0.100 0.25 0.02 0.04 0.053 0.055 0.085 0.12 0.15 0.28 -20 0.25 0.100 -
OCR Scan
Si4948DY Si4946DY Si9948DY 9426DY 9926DY 9925DY 9956DY 4410DY 4412DY
Abstract: 0.25 0.09 0.4 SÌ9953DY SÌ9400DY* S I4435D Y S I4431D Y S I49S 3D Y SÌ9435DY* SÌ9407DY 60 SÌ9948DY -
OCR Scan
I4936D 14431-D 44I0D I4412D 9410DY 9936DY 9940DY
Abstract: . 4-Pin DIP SÌ9407DY * Single -6 0 0.15 IR F D 9 0 1 0 IR F D 9 0 2 0 IR F D 9 0 1 4 IR F D 9 0 2 4 -
OCR Scan
2406M 3055e SI9959 4P05 si9943 SI9945 9400D 9405D 9430D 9435D T0-220 9953D
Abstract: 0.105 "5.1 Single Si4947DY 0.085 0.19 "3.5 Dual Si9407DY 0.15 0.24 "3 Digital DNA
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MAX232 G4 IC404 IC808 ic401 diode C728 diode c729 MPC555 TP102 TP103 CB100 TP100 TP101
Abstract: the controlling switch to a very low level to maintain low dropout performance. Q1 Si9407DY 5V Temic Semiconductors
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JFET TRANSISTOR REPLACEMENT GUIDE j201 UA6538 U2740B-FP UAA145 U2840B CQY80 U3750BM U3760MB-FN U3760MB-SD SSO-44 SD-40 U3800BM
Abstract: the controlling switch to a very low level to maintain low-dropout performance. Q1 Si9407DY 5V Linear Technology
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LT1248 Spice LTC1134 schematics pcb air conditioner sanyo MPC71 LT1510S8 846T5003E2A LT1304 LT1510 LT1118 LT1580 LT1508/LT1509 RS232
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