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Si9407DY Datasheet

Part Manufacturer Description PDF Type
Si9407DY Toshiba Power MOSFETs Cross Reference Guide Original

Si9407DY

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Si9407DY P-Channel Enhancement-Mode MOSFET Product Summary VDS (V) rDS(on) (W) 0.150 @ VGS = ­10 V "3.0 0.240 @ VGS = ­4.5 V ­60 ID (A) "2.4 S S S SO-8 S 1 8 D S , Siliconix S-47958-Rev. E, 15-Apr-96 1 Si9407DY Specifications (TJ = 25_C Unless Otherwise Noted , , 15-Apr-96 Si9407DY Typical Characteristics (25_C Unless Otherwise Noted) Output Characteristics , Junction Temperature (_C) 3 Si9407DY Typical Characteristics (25_C Unless Otherwise Noted Temic Semiconductors
Original
9407DY S-47958--R
Abstract: Si9407DY P-Channel Enhancement-Mode MOSFET Product Summary VDS (V) rDS(on) (W) 0.150 @ VGS = ­10 V "3.0 0.240 @ VGS = ­4.5 V ­60 ID (A) "2.4 S S S SO-8 S 1 8 D S , #5129). Siliconix S-47958-Rev. D, 15-Apr-96 53 Si9407DY Specifications (TJ = 25_C Unless , Siliconix S-47958-Rev. D, 15-Apr-96 Si9407DY Typical Characteristics (25_C Unless Otherwise Noted , 150 TJ ­ Junction Temperature (_C) 55 Si9407DY Typical Characteristics (25_C Unless Temic Semiconductors
Original
Abstract: Si9407DY P-Channel Enhancement-Mode MOSFET Product Summary VDS (V) rDS(on) (W) 0.150 @ VGS = ­10 V "3.0 0.240 @ VGS = ­4.5 V ­60 ID (A) "2.4 S S S SO-8 S 1 8 D S , #5129). Siliconix S-47958-Rev. E, 15-Apr-96 1 Si9407DY Specifications (TJ = 25_C Unless , Siliconix S-47958-Rev. E, 15-Apr-96 Si9407DY Typical Characteristics (25_C Unless Otherwise Noted , 150 TJ ­ Junction Temperature (_C) 3 Si9407DY Typical Characteristics (25_C Unless Temic Semiconductors
Original
Abstract: Si9407DY Siliconix PChannel EnhancementMode MOSFET Product Summary VDS (V) rDS(on) (W) 0.150 @ VGS = -10 V "3.0 0.240 @ VGS = -4.5 V -60 ID (A) "2.4 S S S SO8 S 1 8 , . Please request FaxBack document #1203. P-38889-Rev. D (10/17/94) 1 Si9407DY Siliconix , v 300 ms, duty cycle v 2%. 2 P-38889-Rev. D (10/17/94) Si9407DY Siliconix Typical , Temperature (_C) 3 Si9407DY Siliconix Typical Characteristics (25_C Unless Otherwise Noted) 10 Temic Semiconductors
Original
P-38889--R
Abstract: ) 1-11 LITTLE FOOT Tem ic Typical Characteristics (25 °C Unless , Tem ic siM ç o n ix _ 9407DY P-Channel Enhancement-Mode MOSFET Product Summary Vd s (V) r DS(on) ( Ö ) 0.150 @ V GS = - 1 0 V I d (A ) ± 3 .0 ± 2 .4 -6 0 , ) Symbol R thJA Limit 50 Unit °C/W P-35337-Rev. C (05/02/94) 1-9 Tem ic SÌ9407DY , ic SÌ9407DY Typical -
OCR Scan
Q1355 P-35337--R
Abstract: -38889-Rev D {10/17/94) 19 SÎ9407DY Specifications (Tj = 25° C Unless Otherwise Noted) Parameter m , Siliconix SÌ9407DY Typical Characteristics (25 °C Unless Otherwise Noted) Output Characteristics , ) 21 SÍ9407DY Topical Characteristics (25 °C Unless Otherwise Noted) Source-Drain Diode Forward -
OCR Scan
38889--R P-38889--
Abstract: Tem ic Semiconductors SÌ9407DY I d (A) ±3.0 ±2.4 P-Channel Enhancement-Mode MOSFET Product Summary VDs(V ) -60 n>S(on) (£2) 0.150 @ VGS = -10 V 0.240 @ Vos = -4.5 V SO-8 S IX S IX G [T , Ratings 2 SÌ9407DY Specifications (Tj = 25°C Unless Otherwise Noted) Parameter Static Gate , Semiconductors SÌ9407DY Typical Characteristics (25 °C Unless Otherwise Noted) Output Characteristics u , SÍ9407DY Typical Characteristics (25 °C Unless Otherwise Noted) Source-Drain Diode Forward Voltage ~ a I -
OCR Scan
E54735 A254735 S2SM735
Abstract: U S ilic o n ix A M e m b e r o f th e T e m ic G ro u p SÌ9407DY P-Channel Enhancement-Mode MOSFET Product Summary V DS r D S(on ) (V) -6 0 (Q) Id (A) ±3.3 0.150 @ V GS= - 1 0 V 0.240 @ VGS = -4 .5 V ± 2.6 s s s SO-8 ÎII ~~8~~| D ~7~1 D ~6~1 D s IX s [X S IX G X Top View XI D D D D D P-Channel M OSFET fin Absolute Maximum Ratings (Ta = 25 °C Unless , Information (12/18/92) 17 SÌ9407DY Specifications (Tj = 25 °C Unless Otherwise Noted) P aram eter -
OCR Scan
Abstract: SI9407DY Transistors P-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)3.0 I(DM) Max. (A) Pulsed I(D)2.4 @Temp (øC)70â'™ IDM Max (@25øC Amb)12 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)2.5 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150Ãu Thermal Resistance Junc-Case Thermal Resistance Junc-Amb.50 V(GS)th Max. (V) V(GS)th (V) (Min)1.0 @(VDS) (V) (Test Condition)20 @I(D) (A) (Test Condition)250u I(DSS) Max. (A American Microsemiconductor
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Abstract: * SÌ9400DY9953DY9435DY SÌ9407DY* SÌ9948DY* 27 13 53 9 69 29 17 55 C o m plem entary M OSFETs 20 -2 -
OCR Scan
45DY 8pin 9430DY 9405DY 9947DY 9958DY 9943DY 9942DY
Abstract: SÌ4948DY SÌ9407DY SÌ9948DY -60 -30 0.100 0.25 0.02 0.04 0.053 0.055 0.085 0.12 0.15 0.28 -20 0.25 0.100 -
OCR Scan
Si4948DY Si4946DY Si9948DY 9426DY 9926DY 9925DY 9956DY 4410DY 4412DY
Abstract: 0.25 0.09 0.4 SÌ9953DY SÌ9400DY* S I4435D Y S I4431D Y S I49S 3D Y SÌ9435DY* SÌ9407DY 60 SÌ9948DY -
OCR Scan
I4936D 14431-D 44I0D I4412D 9410DY 9936DY 9940DY
Abstract: . 4-Pin DIP SÌ9407DY * Single -6 0 0.15 IR F D 9 0 1 0 IR F D 9 0 2 0 IR F D 9 0 1 4 IR F D 9 0 2 4 -
OCR Scan
2406M 3055e SI9959 4P05 si9943 SI9945 9400D 9405D 9430D 9435D T0-220 9953D
Abstract: 0.105 "5.1 Single Si4947DY 0.085 0.19 "3.5 Dual Si9407DY 0.15 0.24 "3 Digital DNA
Original
MAX232 G4 IC404 IC808 ic401 diode C728 diode c729 MPC555 TP102 TP103 CB100 TP100 TP101
Abstract: the controlling switch to a very low level to maintain low dropout performance. Q1 Si9407DY 5V Temic Semiconductors
Original
JFET TRANSISTOR REPLACEMENT GUIDE j201 UA6538 U2740B-FP UAA145 U2840B CQY80 U3750BM U3760MB-FN U3760MB-SD SSO-44 SD-40 U3800BM
Abstract: the controlling switch to a very low level to maintain low-dropout performance. Q1 Si9407DY 5V Linear Technology
Original
LT1248 Spice LTC1134 MPC71 schematics pcb air conditioner sanyo LT1510S8 846T5003E2A LT1304 LT1510 LT1118 LT1580 LT1508/LT1509 RS232
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