500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : SI9405DY Supplier : Vishay Siliconix Manufacturer : Bristol Electronics Stock : 1,405 Best Price : $1.7450 Price Each : $4.2560
Part : SI9405DY-T1 Supplier : Vishay Siliconix Manufacturer : Bristol Electronics Stock : 1,405 Best Price : $1.7450 Price Each : $4.2560
Shipping cost not included. Currency conversions are estimated. 

Si9405DY Datasheet

Part Manufacturer Description PDF Type
Si9405DY Toshiba Power MOSFETs Cross Reference Guide Original
SI9405DY Siliconix TRANSISTOR MOSFET SMD SO 8 Scan

Si9405DY

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: JBTSiliconix A Member of the Temic Group 9405DY P-Channel Enhancement-Mode MOSFET Product Summary V ds (V) -20 rn s(o n ) Id (Q) 0.10 @ V GS = - 1 0 V 0.16 @ V GS = - 4 .5 V (A) ±4.3 t3 , . D (12/18/92) 13 SÌ9405DY Specifications (Tj = 25°C Unless Otherwise Noted) P aram eter S , A A 07445- Rev. D (12/18/92) IF S ilic o n ix A Member of theTEMic Group SÎ9405DY , A 07445- Rev. D (12/18/92) 15 SÎ9405DY Typical Characteristics (25°C Unless Otherwise Noted -
OCR Scan
s05d
Abstract: SÌ9405DY P-Channel Enhancement-Mode MOSFET Product Summary V d s (V) 20 r DS(on) (ß ) 0.10 @ Vos = -1 0 V 0.16 @ Vg s = ^ . 5 V I d (A) ± 4.3 ± 3.4 Recommended upgrade: Si9430DY Lower , (FaxBack document #70510). Siliconix S-47958-Rev. H, 15-Apr-96 1 SÌ9405DY Specifications (Tj = , -47958-Rev. H, 15-Apr-96 SÌ9405DY Typical Characteristics (25 °C Unless Otherwise Noted) 20 § ö 15 5 , C) Siliconix S-47958-Rev. H, 15-Apr-96 SÍ9405DY Typical Characteristics (25 °C Unless -
OCR Scan
6T1D 9430DY 6447DQ S-47958--R
Abstract: Si9405DY P-Channel Enhancement-Mode MOSFET Product Summary VDS (V) rDS(on) (W) 0.10 @ VGS = ­10 V "4.3 0.16 @ VGS = ­4.5 V ­20 ID (A) "3.4 Recommended upgrade: Si9430DY Lower , document #5102). Siliconix S-47958-Rev. H, 15-Apr-96 49 Si9405DY Specifications (TJ = 25 , width v 300 ms, duty cycle v 2%. 50 Siliconix S-47958-Rev. H, 15-Apr-96 Si9405DY Typical , 0 50 100 150 TJ ­ Junction Temperature (_C) 51 Si9405DY Typical Characteristics Temic Semiconductors
Original
Si6447DQ
Abstract: Si9405DY P-Channel Enhancement-Mode MOSFET Product Summary VDS (V) rDS(on) (W) 0.10 @ VGS = ­10 V "4.3 0.16 @ VGS = ­4.5 V ­20 ID (A) "3.4 Recommended upgrade: Si9430DY Lower , #70510). Siliconix S-47958-Rev. H, 15-Apr-96 1 Si9405DY Specifications (TJ = 25_C Unless , , duty cycle v 2%. 2 Siliconix S-47958-Rev. H, 15-Apr-96 Si9405DY Typical Characteristics , 0 50 100 150 TJ ­ Junction Temperature (_C) 3 Si9405DY Typical Characteristics Temic Semiconductors
Original
Abstract: tu r e ( ° C ) 1-7 LITTLE FOOT T e m ic Typical , T e m ic SÌ9405DY P-Channel Enhancement-Mode MOSFET Product Summary VDS(V) rDS(on) (ß ) 0.10 @ Vos = - i o v 0.16 @ VGs = -4.5 V Id (A , /16/94) 1-5 LITTLE FOOT V n el T e m ic SÌ9405DY Specifications (Tj = 25 °C Unless , Si9405DY Typical Characteristics (25°C Unless Otherwise Noted) u p i Q a i Q 0 V ps D rain -to -S -
OCR Scan
P3482 9430D 6447D P-34826--
Abstract: Si9405DY P-Channel Enhancement-Mode MOSFET Product Summary VDS (V) rDS(on) (W) 0.10 @ VGS = ­10 V "4.3 0.16 @ VGS = ­4.5 V ­20 ID (A) "3.4 Recommended upgrade: Si9430DY Lower , document #5102). Siliconix S-47958-Rev. H, 15-Apr-96 1 Si9405DY Specifications (TJ = 25 , width v 300 ms, duty cycle v 2%. 2 Siliconix S-47958-Rev. H, 15-Apr-96 Si9405DY Typical , 0 50 100 150 TJ ­ Junction Temperature (_C) 3 Si9405DY Typical Characteristics Temic Semiconductors
Original
Abstract: Tem ic Se m ic o n d u c to r s SÌ9405DY P-Channel Enhancement-Mode MOSFET Product Summary V d s (V) 20 rDS(on) (Q ) 0.10 @ VGS = -1 0 V 0.16 @ Vc s = -4.5 V I d (A) ±4.3 ±3.4 Recommended , FOOT SÌ9405DY Specifications (Tj = 25 °C Unless Otherwise Noted) Param eter Static Gate , -Apr-96 Ö254735 £0300 0Ö3 T em ic Semiconductors Si9405DY Typical Characteristics (25 °C Unless , SÍ9405DY Typical Characteristics (25 °C Unless Otherwise Noted) Tem ic Semiconductors Vsd - -
OCR Scan
2SM73S I0203 S-47958-- A25M735 S2SM735
Abstract: SI9405DY Transistors P-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)20 V(BR)GSS (V)20 I(D) Max. (A)4.3 I(DM) Max. (A) Pulsed I(D)3.3 @Temp (øC)70 IDM Max (@25øC Amb)20 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)2.5 Minimum Operating Temp (øC)-55Ãu Maximum Operating Temp (øC)150Ãu Thermal Resistance Junc-Case Thermal Resistance Junc-Amb.50 V(GS)th Max. (V) V(GS)th (V) (Min)0.5 @(VDS) (V) (Test Condition) @I(D) (A) (Test Condition)250u I(DSS) Max. (A)2u American Microsemiconductor
Original
Abstract: ir S ilic o n ix A M e m b e r o f th e T E M ic G ro u p Selector Guide LITTLE FOOT 8-Pin SOIC r D S (on) < P ) VDs(V ) VGS = 10 V VGS = 4.5V I d (A) C onfiguration P a rt N um ber D ata Sheet Page # P-C hannel M OSFETs -2 0 -2 0 -2 0 -2 0 -2 0 -3 0 -6 0 -6 0 0.06 0.10 0.11 0.25 0.25 0.07 0.15 0.25 0.10 0.16 0.19 0.40 0.40 0.10 0.24 0.50 -5 .3 -4 .3 -3 .5 -2 .5 -2 .3 - 5 .3 - 3 .3 -2 .3 Single Single Dual Single Dual Single Single Dual SÌ9430DY SÌ9405DY9947DY -
OCR Scan
45DY 8pin 9400DY 9953DY 9435DY 9407DY 9948DY 9958DY
Abstract: Dual P-Channel LITTLE FOOT® Devices (SOIC8) SÌ9424DY9434DY9431DY9400DY 1 1 SÌ9405DY 1 1 -
OCR Scan
Si4948DY Si4946DY Si9948DY 9426DY 9926DY 9925DY 9956DY 4410DY 4412DY
Abstract: Q1 SI9405DY P L1 50uH 5V C1 @ 2.3A D1 430uF NSQ03A03 FB SHDN AGND C7 0.1uF 8 , CC CS 9 11 SS EXT REF Q1 SI9405DY P L1 33uH 3.3V @ 2.3A D1 NSQ03A03 , the P-FET. The Standard Application Circuit (Figure 1a, 1b) uses an 8-pin Si9405DY surface-mount Maxim Integrated Products
Original
MAX747CPD MAX747CSD MAX747EPD MAX747ESD MAX747MJD MAX747 MAX746 MAX747C/D
Abstract: uPA1710AG IRF7203 Si9405DY uPA1710AG IRF7205 Si9435DY uPA1710AG IRF7306 uPA1711G IRF7204 Si9430DY uPA1711G -
Original
BUZ215 NDS8483 NDS9945 BUZ384 BUZ382 MOSFET dual SOP-8 UPA1712G channel mosfet sop_8 uPA1711 PA1701 PA1701A PA1704 PA1700 PA1700A PA1705
Abstract: Q1 SI9405DY P L1 50uH 5V C1 @ 2.3A D1 430uF NSQ03A03 FB SHDN AGND C7 0.1uF 8 , CC CS 9 11 SS EXT REF Q1 SI9405DY P L1 33uH 3.3V @ 2.3A D1 NSQ03A03 , the P-FET. The Standard Application Circuit (Figure 1a, 1b) uses an 8-pin Si9405DY surface-mount Maxim Integrated Products
Original
Abstract: transistor is Siliconix Si9405DY. 2,3 5,6,7,8 TO_PA + 4 - VDD Si9405DY 1K 3 2 , "on" resistance. An example is Siliconix P/N SI-9405DY. Timing the Bias; Option 1 To insure proper Anadigics
Original
AWT1922S11 GRM36cog270J50 gsm signal Booster FSF52 WARTH QPAD AWT1922 ERJ-36SYJ222V ERJ-36SYJ562V ERJ-36SYJ152V ECS-H1AY225R GRM36COG150J50
Abstract: transistor is a Toshiba 4RN1308 (NPN) with built in bias resistors. The pass transistor is Siliconix Si9405DY. , Siliconix: SI-9405DY. Timing the Bias: Option 1 Figure A, shown below uses 2 pass transistors. The first -
OCR Scan
awt0904 AWT0904
Abstract: Siliconix Si9405DY. Control=OV - PA disconnect«! System Configuration AWT906 312 APPLICATION , device with very low "on" resistance such as the Siliconix SI-9405DY. Timing the Bias; Option 1 To -
OCR Scan
AWT906D T906D 40X7R T0906 824-849MH RN1308
Abstract: STS10NF30L STS12NF30L STS12NF30L Si9405DY STS8NF30L STS5PF20L STS7NF30L STS7NF30L STS4DPF20L , Si4947DY Si5402DC SI5435DC Si9405DY Si9410DY Si9430DY Si9804DY Si9933ADY Si9936DY Si9945DY STMicroelectronics
Original
fqp60n06 SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L
Abstract: PMOS device with very low "on" resistance such as the Siliconix SI-9405DY. To insure proper operation -
OCR Scan
48vdc schematic diagram AWT0903 T0903
Abstract: BVALID GND 3.3V/5V BSENSE GND CIRRUS LOGIC CL-PD6720 Q1 Si9405DY Q2 Si9933DY AVCC 3V 5V + 10ÂuF Q3 Si9933DY Q4 Si9405DY BVCC 5V 3.3V Q5 Si9933DY BVCC 3V Q6 Linear Technology
Original
LT1313 LT1312
Abstract: STS10NF30L STS12NF30L STS12NF30L Si9405DY STS8NF30L STS5PF20L STS7NF30L STS7NF30L STS4DPF20L , Si4947DY Si5402DC SI5435DC Si9405DY Si9410DY Si9430DY Si9804DY Si9933ADY Si9936DY Si9945DY STMicroelectronics
Original
rfp60n06 FQP50N10 STP55NF06 AND ITS EQUIVALENT FSD6680 SFP70N03 HGTG*N60A4D STP80NE03L-06 STS4DPF30L STB70NF03L STB55NF03L STW18NB40 STS8NFS30L
Abstract: . It is best implemented using a silicon PMOS device such as the Siliconix: SI-9405DY. Timing the , . The pass transistor is Siliconix Si9405DY. C o ntrol = OV - PA D isconnected PA to Antenna Block -
OCR Scan
AWT0908 T0908
Showing first 20 results.