Si7964DP Si7964DP-T1--E3 - Datasheet Archive

New Product Vishay Siliconix Dual N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) Qg (Typ) 60

Si7964DP Si7964DP New Product Vishay Siliconix Dual N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) Qg (Typ) 60 0.023 @ VGS = 10 V 9.6 43 D D D D D TrenchFETr Power MOSFET New Low Thermal Resistance PowerPAKr Package Dual MOSFET for Space Savings 100% Rg Tested High Threshold Voltage At High Temperature PowerPAK SO-8 D1 S1 6.15 mm 1 5.15 mm G1 2 S2 3 G2 4 G1 D1 8 D2 G2 D1 7 D2 6 D2 S1 S2 N-Channel MOSFET N-Channel MOSFET 5 Bottom View Ordering Information: Si7964DP-T1-E3 Si7964DP-T1-E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 60 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID Single Avalanche Current IS L = 0.1 mH Single Avalanche Energy 6.1 7.7 4.9 40 Maximum Power Dissipationa TA = 70_C IAS Operating Junction and Storage Temperature Range PD A 2.9 1.2 25 EAS TA = 25_C V 9.6 IDM Continuous Source Current (Diode Conduction)a Unit 31 mJ 3.5 1.4 2.2 0.9 TJ, Tstg -55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J M i Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) Symbol t v 10 sec Steady State Steady State RthJC Maximum 26 RthJA Typical 35 60 85 2.2 Unit 2.7 _C/W C/W Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 73101 S-42058-Rev. B, 15-Nov-04 www.vishay.com 1 Si7964DP Si7964DP New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit VGS(th) VDS = VGS, ID = 250 mA 3.4 IGSS VDS = 0 V, VGS = "20 V 4.5 V VDS = 60 V, VGS = 0 V "100 1 nA VDS = 60 V, VGS = 0 V, TJ = 55_C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea mA 30 VDS w 5 V, VGS = 10 V A rDS(on) VDS = 15 V, ID = 9.6 A 30 VSD Diode Forward Voltagea VGS = 10 V, ID = 9.6 A gfs Forward Transconductancea 0.019 0.023 IS = 2.9 A, VGS = 0 V 0.8 1.2 43 65 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resostamce VDS = 30 V, VGS = 10 V, ID = 9.6 A f = 1 MHz Rg Turn-On Delay Time 15 1 2 15 Fall Time Source-Drain Reverse Recovery Time trr IF = 2.9 A, di/dt = 100 A/ms 75 25 35 tf 25 50 VDD = 20 V, RL = 20 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W td(off) 30 15 tr Turn-Off Delay Time 3 20 td(on) Rise Time nC 8.5 60 W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 Transfer Characteristics 40 VGS = 10 thru 7 V 6V 32 I D - Drain Current (A) I D - Drain Current (A) 32 24 16 8 5V 16 TC = 125_C 8 25_C 0 -55_C 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 24 5 0 1 2 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) Document Number: 73101 S-42058-Rev. B, 15-Nov-04 Si7964DP Si7964DP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 4000 0.025 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 0.030 VGS = 10 V 0.020 0.015 0.010 Ciss 3200 2400 1600 800 0.005 0.000 0 0 5 10 15 20 25 30 35 0 40 10 ID - Drain Current (A) Gate Charge 30 40 50 60 On-Resistance vs. Junction Temperature 1.8 VDS = 30 V ID = 9.6 A VGS = 10 V ID = 9.6 A 1.6 8 rDS(on) - On-Resiistance (Normalized) V GS - Gate-to-Source Voltage (V) 20 VDS - Drain-to-Source Voltage (V) 10 6 4 2 1.4 1.2 1.0 0.8 0 0 10 20 30 40 0.6 -50 50 -25 0 Qg - Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.05 r DS(on) - On-Resistance ( W ) TJ = 150_C TJ = 25_C 10 1 0.0 25 TJ - Junction Temperature (_C) 40 I S - Source Current (A) Crss Coss 0.04 ID = 9.6 A 0.03 0.02 0.01 0.00 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) Document Number: 73101 S-42058-Rev. B, 15-Nov-04 1.5 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si7964DP Si7964DP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.8 100 80 ID = 250 mA -0.0 Power (W) V GS(th) Variance (V) 0.4 -0.4 60 40 -0.8 20 -1.2 -1.6 -50 -25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 100 I D - Drain Current (A) 100 600 Safe Operating Area, Junction-To-Ambient IDM Limited *rDS(on) Limited P(t) = 0.0001 10 P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 0.1 TA = 25_C Single Pulse 0.1 P(t) = 1 P(t) = 10 BVDSS Limited 0.01 dc 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 10 1 Time (sec) TJ - Temperature (_C) 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 60_C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 www.vishay.com 4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 73101 S-42058-Rev. B, 15-Nov-04 Si7964DP Si7964DP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73101. Document Number: 73101 S-42058-Rev. B, 15-Nov-04 www.vishay.com 5