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SI7464DP-T1-E3 Vishay Siliconix Trans MOSFET N-CH 200V 1.8A 8-Pin PowerPAK SO T/R visit Digikey Buy
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Part : SI7464DP-T1-E3 Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : - Best Price : $0.7819 Price Each : $0.8869
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Si7464DP Datasheet

Part Manufacturer Description PDF Type
SI7464DP Vishay Siliconix MOSFETs Original
SI7464DP Vishay Telefunken N-channel 6-v (d-s) Fast Switching Mosfet Original
Si7464DP SPICE Device Model Vishay N-Channel 6-V (D-S) Fast Switching MOSFET Original
SI7464DP-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 1.8A PPAK 8SOIC Original
SI7464DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 1.8A 8-SOIC Original

Si7464DP

Catalog Datasheet MFG & Type PDF Document Tags

Si7464DP

Abstract: Si7464DP-T1-E3 7 D 6 G D 5 Bottom View S Ordering Information: Si7464DP-T1-E3 (Lead (Pb)-free) Si7464DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C , Si7464DP Vishay Siliconix N-Channel 200-V (D-S) Fast Switching MOSFET FEATURES PRODUCT , -0227-Rev. C, 09-Feb-09 www.vishay.com 1 Si7464DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless , Document Number: 72052 S09-0227-Rev. C, 09-Feb-09 Si7464DP Vishay Siliconix TYPICAL CHARACTERISTICS
Vishay Siliconix
Original
7464DP 7464DP-T1-E3 7464DP-T1-GE3
Abstract: View Ordering Information: Si7464DP-T1 Si7464DP-T1-E3 (Lead (Pb)-free) S N-Channel MOSFET ABSOLUTE , Si7464DP New Product Vishay Siliconix N-Channel 200-V (D-S) Fast Switching MOSFET PRODUCT , S-52554-Rev. B, 19-Dec-05 www.vishay.com 1 Si7464DP Vishay Siliconix New Product , www.vishay.com 2 Document Number: 72052 S-52554-Rev. B, 19-Dec-05 Si7464DP New Product TYPICAL , Si7464DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS 25 °C, unless noted 0.8 50 0.4 V GS(th Vishay Siliconix
Original
7464DP-T1 7464DP-T1--E3

Si7464DP

Abstract: SPICE Device Model Si7464DP Vishay Siliconix N-Channel 6-V (D-S) Fast Switching MOSFET CHARACTERISTICS · N-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate , -Dec-02 www.vishay.com 1 SPICE Device Model Si7464DP Vishay Siliconix SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE , Document Number: 70326 12-Dec-02 SPICE Device Model Si7464DP Vishay Siliconix COMPARISON OF MODEL
Vishay Siliconix
Original

Si7464DP

Abstract: Si7464DP-T1 D D 8 D 7 D 6 D G 5 Bottom View S Ordering Information: Si7464DP-T1 Si7464DP-T1-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise , Si7464DP Vishay Siliconix New Product N-Channel 200-V (D-S) Fast Switching MOSFET , -Dec-05 www.vishay.com 1 Si7464DP Vishay Siliconix New Product SPECIFICATIONS TJ = 25 °C, unless otherwise , S-52554-Rev. B, 19-Dec-05 Si7464DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS
Vishay Siliconix
Original
S-52554-R

Si7464DP

Abstract: Si7464DP New Product Vishay Siliconix N-Channel 200-V (D-S) Fast Switching MOSFET FEATURES , S-22097-Rev. A, 02-Dec-02 www.vishay.com 1 Si7464DP New Product Vishay Siliconix , -Dec-02 Si7464DP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs , Gate-to-Source Voltage (V) www.vishay.com 3 Si7464DP New Product Vishay Siliconix TYPICAL , Number: 72052 S-22097-Rev. A, 02-Dec-02 Si7464DP New Product Vishay Siliconix Normalized
Vishay Siliconix
Original
S-22097--R

Si7464DP

Abstract: 70326 SPICE Device Model Si7464DP Vishay Siliconix N-Channel 6-V (D-S) Fast Switching MOSFET CHARACTERISTICS · N-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate , -60245Rev. B, 20-Feb-06 www.vishay.com 1 SPICE Device Model Si7464DP Vishay Siliconix SPECIFICATIONS , -Feb-06 SPICE Device Model Si7464DP Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS
Vishay Siliconix
Original
70326 S-60245R

Si7464DP

Abstract: SPICE Device Model Si7464DP Vishay Siliconix N-Channel 6-V (D-S) Fast Switching MOSFET CHARACTERISTICS · N-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate , -May-04 www.vishay.com 1 SPICE Device Model Si7464DP Vishay Siliconix SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE , testing. www.vishay.com 2 Document Number: 70326 25-May-04 SPICE Device Model Si7464DP
Vishay Siliconix
Original
Abstract: : Si7464DP-T1-E3 (Lead (Pb)-free) Si7464DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET , Si7464DP Vishay Siliconix N-Channel 200-V (D-S) Fast Switching MOSFET FEATURES PRODUCT , components. Document Number: 72052 S09-0227-Rev. C, 09-Feb-09 www.vishay.com 1 Si7464DP Vishay , S09-0227-Rev. C, 09-Feb-09 Si7464DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless , Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si7464DP Vishay Vishay Siliconix
Original
2011/65/EU 2002/95/EC JS709A
Abstract: Si7464DP New Product Vishay Siliconix N-Channel 200-V (D-S) Fast Switching MOSFET PRODUCT , RthJC Symbol Typical 25 60 2.9 Maximum 30 70 3.5 Unit _C/W 1 Si7464DP Vishay , -22097-Rev. A, 02-Dec-02 Si7464DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance , -22097-Rev. A, 02-Dec-02 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si7464DP Vishay , Document Number: 72052 S-22097-Rev. A, 02-Dec-02 Si7464DP New Product Normalized Thermal Transient Vishay Siliconix
Original
Abstract: SPICE Device Model Si7464DP www.vishay.com Vishay Siliconix N-Channel 200 V (D-S) Fast Switching MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized , SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SPICE Device Model Si7464DP , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SPICE Device Model Si7464DP www.vishay.com Vishay Vishay Siliconix
Original
S12-2948-R

Si7464DP

Abstract: SPICE Device Model Si7464DP Vishay Siliconix N-Channel 6-V (D-S) Fast Switching MOSFET CHARACTERISTICS · N-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate , -60245Rev. B, 20-Feb-06 www.vishay.com 1 SPICE Device Model Si7464DP Vishay Siliconix SPECIFICATIONS , -Feb-06 SPICE Device Model Si7464DP Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS
Vishay Siliconix
Original
Abstract: : Si7464DP-T1-E3 (Lead (Pb)-free) Si7464DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET , Si7464DP Vishay Siliconix N-Channel 200-V (D-S) Fast Switching MOSFET FEATURES PRODUCT , components. Document Number: 72052 S09-0227-Rev. C, 09-Feb-09 www.vishay.com 1 Si7464DP Vishay , S09-0227-Rev. C, 09-Feb-09 Si7464DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless , Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si7464DP Vishay Vishay Siliconix
Original
Abstract: Bottom View Ordering Information: Si7464DP-T1-E3 (Lead (Pb)-free) Si7464DP-T1-GE3 (Lead (Pb)-free and , Si7464DP Vishay Siliconix N-Channel 200-V (D-S) Fast Switching MOSFET PRODUCT SUMMARY VDS , -Feb-09 www.vishay.com 1 Si7464DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter , Number: 72052 S09-0227-Rev. C, 09-Feb-09 Si7464DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C , Number: 72052 S09-0227-Rev. C, 09-Feb-09 www.vishay.com 3 Si7464DP Vishay Siliconix TYPICAL Vishay Siliconix
Original
Abstract: Bottom View Ordering Information: Si7464DP-T1-E3 (Lead (Pb)-free) Si7464DP-T1-GE3 (Lead (Pb)-free and , Si7464DP Vishay Siliconix N-Channel 200-V (D-S) Fast Switching MOSFET PRODUCT SUMMARY VDS , -Feb-09 www.vishay.com 1 Si7464DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter , Number: 72052 S09-0227-Rev. C, 09-Feb-09 Si7464DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C , Number: 72052 S09-0227-Rev. C, 09-Feb-09 www.vishay.com 3 Si7464DP Vishay Siliconix TYPICAL Vishay Siliconix
Original
Abstract: : Si7464DP-T1-E3 (Lead (Pb)-free) Si7464DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET , Si7464DP Vishay Siliconix N-Channel 200-V (D-S) Fast Switching MOSFET FEATURES PRODUCT , components. Document Number: 72052 S09-0227-Rev. C, 09-Feb-09 www.vishay.com 1 Si7464DP Vishay , S09-0227-Rev. C, 09-Feb-09 Si7464DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless , Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si7464DP Vishay Vishay Siliconix
Original

lm3445

Abstract: RF071M2STR /Siliconix Si7464DP Q8 TRANS PNP LP 100MA 30V SOT23 ON Semiconductor BC858CLT1G R1
National Semiconductor
Original
AN-1978 lm3445 RF071M2STR MOSFET N-CH 200V br1 BRIDGE application note LM3445 BRIDGE-RECTIFIER 100v 1a LM3445 90VAC 135VAC

MOSFET N-CH 200V

Abstract: MF72-060D5 /Siliconix Si7464DP Q8 TRANS PNP LP 100MA 30V SOT23 ON Semiconductor BC858CLT1G R1
National Semiconductor
Original
MF72-060D5 mf72 CRCW2512330RJNEG SCHEMATIC dimmer GRM31CR72A105KA01 smd trans. D2

application note LM3445

Abstract: GRM188R71C474K -7-F BSS84W-7-F MMBTA92 BSS123W-7-F Si7464DP BC858CLT1G CRCW2512330RJNEG CRCW08054M75FKEA CRCW1206332kFKEA MFG
National Semiconductor
Original
GRM188R71C474K GCM1885C GRM188R71C474KA HI1206T161 murs120-13-f 120VAC SNVA401F

Pa3177NL

Abstract: LT3748 solutions limit the leakage spike to less than 190V, below the 200V VDS(MAX) rating of the Si7464DP MOSFET
Linear Technology
Original
LT3748 Pa3177NL IGBT 48V 200A Si7738 BZT52C5 RC snubber mosfet design SBR8U60P5 BZT52C5V6 7738DP PA3177NL LT3573

pa2467

Abstract: si7738 spike to less than 190V, below the 200V VDS(MAX) rating of the Si7464DP MOSFET. 140 120 100 80
Linear Technology
Original
pa2467 LT3574/LT3575 LT3757/LT3758 LT3957/LT3958 LT1725 LT1737 3803/LTC3803-3
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