Si7445DP Si7445DP-T1 Si7445DP-T1--E3 - Datasheet Archive

 

Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) () 0.0077 @ VGS = ­4.5 V ­19 0.0094

 

Si7445DP Si7445DP Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) () 0.0077 @ VGS = ­4.5 V ­19 0.0094 @ VGS = ­2.5 V ­17 0.0125 @ VGS = ­1.8 V ­20 ID (A) · TrenchFET® Power MOSFET · New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile · 100 % Rg Tested ­15 Pb-free Available RoHS* COMPLIANT APPLICATIONS · Load Switch Battery Applications PowerPAK SO-8 S 6.15 mm 5.15 mm 1 S 2 S 3 G S 4 D 8 D 7 G D 6 D 5 Bottom View D Ordering Information: Si7445DP-T1 Si7445DP-T1 Si7445DP-T1-E3 Si7445DP-T1-E3 (Lead (Pb)-Free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150°C)a TA = 25°C TA = 70°C Pulsed Drain Current IDM IS Continuous Source Current (Diode Conduction)a TA = 25°C TA = 70°C Maximum Power Dissipationa ID Operating Junction and Storage Temperature Range PD TJ, Tstg Soldering Recommendations (Peak Temperature)b,c 10 secs Steady State ­20 ±8 Unit V ­19 ­15 ­12 ­9 ­50 ­4.3 5.4 3.4 ­1.6 1.9 1.2 ­55 to 150 260 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Symbol t 10 sec Steady State Steady State RthJA RthJC Typical 18 52 1.0 Maximum 23 65 1.3 Unit °C/W Notes a. Surface Mounted on 1" x 1" FR4 Board. b. See Solder Profile ( http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 71626 S-51773-Rev. C, 31-Oct-05 www.vishay.com 1 Si7445DP Si7445DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Condition Min Gate Threshold Voltage Typ ­0.45 Max Unit Static VGS(th) VDS = VGS, ID = ­250 µA 1.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ±8 V ±100 nA IDSS VDS = ­20 V, VGS = 0 V ­1 Zero Gate Voltage Drain Current VDS = ­20 V, VGS = 0 V, TJ = 70°C ­10 On-State Drain Currenta ID(on) VDS ­5 V, VGS = ­4.5 V ­40 A VGS = ­4.5 V, ID = ­19 A rDS(on) 0.0077 0.0078 0.0094 0.0105 0.0125 gfs VDS = ­15 V, ID = ­19 A 75 VSD IS = ­4.3 A, VGS = 0 V ­0.65 ­1.1 92 a 140 Forward Transconductancea Diode Forward Voltage 0.0064 VGS = ­2.5 V, ID = ­17 A VGS = ­1.8 V, ID = ­10 A Drain-Source On-State Resistancea µA S V Dynamicb Total Gate Charge Qg Gate-Source Charge VDS = ­15 V, VGS = ­5 V, ID = ­19 A Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time 19 1 2 Turn-Off Delay Time td(off) Fall Time Source-Drain Reverse Recovery Time 65 trr 400 290 50 IF = ­4.3 A, di/dt = 100 A/µs 600 190 tf 60 45 VDD = ­15 V, RL = 15 ID ­1.0 A, VGEN = ­4.5 V, RG = 6 tr 3.4 40 td(on) Rise Time nC 16.5 80 ns Notes a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless noted 50 50 VGS = 5 thru 2 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 30 1.5 V 20 10 30 20 TC = 125°C 10 25°C 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 10 0 0.0 0.5 - 55 °C 1.0 1.5 2.0 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 71626 S-51773-Rev. C, 31-Oct-05 Si7445DP Si7445DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 15000 0.016 12000 C - Capacitance (pF) r DS(on) - On-Resistance ( ) 0.020 VGS = 1.8 V 0.012 VGS = 2.5 V 0.008 Ciss 9000 6000 VGS = 4.5 V 0.004 3000 0.000 0 0 5 10 15 20 25 30 Coss Crss 0 4 8 12 16 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.6 5 VDS = 15 V ID = 19 A 4 3 2 1 20 40 60 80 1.2 1.0 0.8 0.6 - 50 0 0 VGS = 4.5 V ID = 19 A 1.4 r DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 20 100 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature ( °C) Gate Charge On-Resistance vs. Junction Temperature 0.030 r DS(on) - On-Resistance ( ) I S - Source Current (A) 50 TJ = 150°C 10 TJ = 25°C 1 0.0 150 0.024 ID = 19 A 0.018 0.012 0.006 0.000 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 71626 S-51773-Rev. C, 31-Oct-05 1.2 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si7445DP Si7445DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 0.6 200 ID = 250 µA 160 Power (W) V GS(th) Variance (V) 0.4 0.2 120 0.0 80 - 0.2 40 - 0.4 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 Single Pulse Power, Junction-to-Ambient Threshold Voltage 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 65°C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 4. Surface Mounted 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71626. www.vishay.com 4 Document Number: 71626 S-51773-Rev. C, 31-Oct-05