NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| SI7407DN | Vishay Siliconix | MOSFETs |
5 pages, |
Original |  |
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| Si7407DN SPICE Device Model | Vishay | P-Channel 12-V (D-S) MOSFET |
3 pages, |
Original | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: SPICE Device Model Si7407DN Vishay Siliconix P-Channel 12-V (D-S) MOSFET CHARACTERISTICS · P-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate Charge , www.vishay.com 1 SPICE Device Model Si7407DN Vishay Siliconix SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE , Si7407DN Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED ... | Original |
3 pages, |
Si7407DN Si7407DN abstract |
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| Abstract: Si7407DN New Product Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT , , 25-Nov-02 www.vishay.com 1 Si7407DN New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C , Gate-to-Source Voltage (V) Document Number: 71912 S-22122-Rev. B, 25-Nov-02 Si7407DN New Product , ) www.vishay.com 3 Si7407DN New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED , Si7407DN New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized ... | Original |
5 pages, |
Si7407DN Si7407DN abstract |
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| Abstract: SPICE Device Model Si7407DN Vishay Siliconix P-Channel 12-V (D-S) MOSFET CHARACTERISTICS · P-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate Charge , B, 10-Apr-06 www.vishay.com 1 SPICE Device Model Si7407DN Vishay Siliconix SPECIFICATIONS , SPICE Device Model Si7407DN Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS ... | Original |
4 pages, |
Si7407DN Si7407DN abstract |
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| Abstract: Bottom View Ordering Information: Si7407DN-T1 D Si7407DN-T1-E3 (Lead (Pb)-free) Si7407DN-T1-GE3 , Si7407DN Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , , exemptions may apply Document Number: 71912 S-80581-Rev. D, 17-Mar-08 www.vishay.com 1 Si7407DN , Si7407DN Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 5000 4000 , www.vishay.com 3 Si7407DN Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 0.4 ... | Original |
6 pages, |
Si7407DN Si7407DN abstract |
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| Abstract: P-Channel MOSFET Ordering Information: Si7407DN-T1 Si7407DN-T1E3 (Lead (Pb)free) ABSOLUTE MAXIMUM , Si7407DN Vishay Siliconix New Product P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT , www.vishay.com 1 Si7407DN Vishay Siliconix New Product SPECIFICATIONS TJ = 25 °C, unless otherwise , Number: 71912 S-51210 S-51210Rev. C, 27-Jun-05 Si7407DN Vishay Siliconix New Product TYPICAL , ) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si7407DN Vishay Siliconix New Product ... | Original |
5 pages, |
ultra low igss pA Si7407DN Si7407DN abstract |
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| Abstract: 1212-8 3.30 mm S 1 S G Bottom View Ordering Information: Si7407DN-T1 Si7407DN-T1-E3 (Lead (Pb)-free) Si7407DN-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET ABSOLUTE , Si7407DN Vishay Siliconix P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on , www.vishay.com 1 Si7407DN Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter , www.vishay.com 2 Document Number: 71912 S-80581-Rev. D, 17-Mar-08 Si7407DN Vishay Siliconix TYPICAL ... | Original |
12 pages, |
Si7407DN Si7407DN abstract |
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| Abstract: Si9183 SI918 (nC) Typ. VGS = 4.5 V 39 VGS = 10 V PD Max. (W) 3.8 PowerPAK 1212-8 Si7407DN ... | Original |
38 pages, |
PowerPAK SO-8 PowerPAK 1212-8 5 Mp camera 1212-8 si2301bds si2323ds Si7705DN SI7601DN Si6923DQ 0038 tsop Si3863BDV Si3861BDV SI3491DV sC89-6 datasheet abstract |
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| Abstract: Si7407DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in , Si7407DN_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION R-C VALUES FOR FILTER , Si7407DN_RC Vishay Siliconix Document Number: 69211 Revision: 23-Jul-07 www.vishay.com 3 ... | Original |
3 pages, |
Si7407DN AN609 C 4977 Si7407DN abstract |
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| * Library of Siliconix subsidiary of Vishay, * $Revision: 1.0 $ * $Author: SRIPADA $ * $Date: 03 FEB 2006 $ *- *$ *Jan 26, 2005 *Doc. ID:76150, Rev. A .SUBCKT 2N7000KL 2N7000KL 2N7000KL 2N7000KL 4 1 2 M1 3 1 2 2 NMOS W=26124u L=0.50u M2 2 1 2 4 PMOS W=26124u L=0.95u R1 4 3 RTEMP 4.5E-1 CGS 1 2 24E-12 24E-12 24E-12 24E-12 DBD 2 4 DBD * .MODEL NMOS NMOS (LEVEL = 3 www.datasheetarchive.com/files/spicemodels/misc/siliconix.lib |
Spice Models | 04/07/2008 | 1556.57 Kb | LIB | siliconix.lib |