NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
Si6925ADQ AN609 - Datasheet Archive
Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using
Si6925ADQ Si6925ADQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. Note: For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform. R-C THERMAL MODEL FOR TANK CONFIGURATION R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Case Foot RT1 41.4159 N/A 16.5114 RT2 43.1519 N/A 33.8852 RT3 14.6377 N/A 28.7965 RT4 55.7945 N/A 5.8069 Thermal Capacitance (Joules/°C) Junction to Ambient Case Foot CT1 8.9899 m N/A 4.8332 m CT2 30.3105 m N/A 40.5991 m CT3 759.4132 u N/A 10.4477 m CT4 1.5243 N/A 200.0630 u This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 74831 Revision: 10-Jul-07 www.vishay.com 1 Si6925ADQ Si6925ADQ_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION R-C VALUES FOR FILTER CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Case Foot RF1 18.4474 N/A 5.7732 RF2 34.1580 N/A 4.8167 RF3 47.4727 N/A 36.8986 RF4 54.9219 N/A 37.5115 Thermal Capacitance (Joules/°C) Junction to Ambient Case Foot CF1 707.2711 u N/A 170.0542 u CF2 5.7896 m N/A 1.4686 m CF3 8.9087 m N/A 1.7632 m CF4 1.5521 N/A 24.0455 m Note: NA indicates not applicable Reference: [1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002 www.vishay.com 2 Document Number: 74831 Revision: 10-Jul-07 Si6925ADQ Si6925ADQ_RC Vishay Siliconix Document Number: 74831 Revision: 10-Jul-07 www.vishay.com 3