Si6552DQ - Datasheet Archive

 

Dual Enhancement-Mode MOSFET (N- and P-Channel) Product Summary VDS (V) N-Channel "2.8 0.11 @ VGS = 2.5 V "2.1 0.1 @

 

Si6552DQ Si6552DQ Dual Enhancement-Mode MOSFET (N- and P-Channel) Product Summary VDS (V) N-Channel "2.8 0.11 @ VGS = 2.5 V "2.1 0.1 @ VGS = ­4.5 V "2.5 0.18 @ VGS = ­2.5 V ­12 ID (A) 0.08 @ VGS = 4.5 V 20 P-Channel rDS(on) (W) "1.9 D1 S2 TSSOP-8 D1 S1 S1 G1 1 D 2 8 7 Si6552DQ Si6552DQ 3 6 4 5 G2 D2 S2 S2 G2 G1 Top View S1 D2 N-Channel MOSFET P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 20 ­12 Gate-Source Voltage VGS Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID "8 "2.8 "2.0 "20 IDM Continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range V "2.5 "2.3 Unit 1.0 A ­1.0 1.0 PD 0.64 W TJ, Tstg ­55 to 150 _C Symbol N- or P-Channel Unit RthJA 125 _C/W Thermal Resistance Ratings Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70175. Siliconix S-47620-Rev. D, 12-Aug-96 23 Si6552DQ Si6552DQ Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage VDS = VGS, ID = 250 mA N-Ch 0.6 VDS = VGS, ID = ­250 mA VGS(th) P-Ch ­0.6 V VDS = 0 V, VGS = "8 V IGSS "100 VDS = 20 V, VGS = 0 V IDSS 1 VDS = ­12 V, VGS = 0 V P-Ch ­1 VDS = 20 V, VGS = 0 V, TJ = 70_C N-Ch 5 VDS = ­12 V, VGS = 0 V, TJ = 70_C Zero Gate Voltage Drain Current N-Ch P-Ch ­5 VDS = 5 V, VGS = 4.5 V ­10 N-Ch 4 P-Ch ­4 VGS = 4.5 V, ID = 2.8 A N-Ch A 0.08 Forward Transconductance a Diode Forward Voltagea VGS = ­4.5 V, ID = 2.5 A rDS(on) P-Ch 0.1 VGS = 2.5 V, ID = 2.1 A N-Ch 0.11 VGS = ­2.5 V, ID = 1.9 A Drain-Source On-State Resistancea P-Ch 0.18 VDS = 15 V, ID = 2.8 A 7 IS = 1.0 A, VGS = 0 V N-Ch 1.2 P-Ch ­1.2 W 12 P-Ch IS = ­1.0 A, VGS = 0 V VSD N-Ch VDS = ­9 V, ID = ­2.5 A gfs mA 10 P-Ch VDS = 5 V, VGS = 2.5 V ID(on) N-Ch VDS = ­5 V, VGS = ­4.5 V VDS = ­5 V, VGS = ­2.5 V On-State Drain Currenta nA S V Dynamicb N-Ch Total Gate Charge Qg N Channel N-Channel VDS = 10 V, VGS = 4.5 V, ID = 2.8 A Gate-Source Charge Qgs P-Channel VDS = ­6 V VGS = ­4.5 V, ID = ­2.5 A 6 V, 45V 25 Gate-Drain Charge Qgd 16 40 P-Ch 9 20 N-Ch 3 P-Ch 2 N-Ch 6 Turn-On Delay Time P-Ch td(on) 3 N-Ch 37 nC 60 Turn-Off Delay Time 21 40 66 100 P-Ch 35 70 N-Ch 56 100 P-Ch 43 80 N-Ch Rise Time P-Ch N-Ch 57 100 P-Ch 22 40 N-Channel-IF = 1.0 A, di/dt = 100 A/ms N-Ch 26 70 P-Channel-IF = ­1.0 A, di/dt = 100 A/ms P-Ch 35 70 tr N-Channel N Channel VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W td(off) P-Channel VDD = ­6 V, RL = 6 W 6V ID ^ ­1 A, VGEN = ­4.5 V, RG = 6 W Fall Time tf Source-Drain Reverse R R Recovery Ti Time trr ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. 24 Siliconix S-47620-Rev. D, 12-Aug-96 Si6552DQ Si6552DQ Typical Characteristics (25_C Unless Noted) N-Channel Output Characteristics Transfer Characteristics 20 20 TC = ­55_C VGS = 8, 7, 6, 5, 4, 3 V 16 I D ­ Drain Current (A) I D ­ Drain Current (A) 16 125_C 12 2V 8 4 25_C 12 8 4 1V 0 0 0 2 4 6 8 10 0 VDS ­ Drain-to-Source Voltage (V) 1 2 4 VGS ­ Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 0.20 1500 1200 0.15 C ­ Capacitance (pF) rDS(on) ­ On-Resistance ( W ) 3 0.10 VGS = 2.5 V 0.05 VGS = 4.5 V 900 600 Ciss Coss 300 Crss 0 0 0 2 4 6 8 10 0 ID ­ Drain Current (A) 4 3 2 1 0 4 6 8 10 12 On-Resistance vs. Junction Temperature VGS = 4.5 V IDS = 2.8 A rDS(on) ­ On-Resistance ( W ) (Normalized) VGS ­ Gate-to-Source Voltage (V) 2.0 VDS = 10 V ID = 2.8 A 0 4 VDS ­ Drain-to-Source Voltage (V) Gate Charge 5 2 8 12 16 Qg ­ Total Gate Charge (nC) Siliconix S-47620-Rev. D, 12-Aug-96 20 1.6 1.2 0.8 0.4 0 ­50 ­25 0 25 50 75 100 125 150 TJ ­ Junction Temperature (_C) 25 Si6552DQ Si6552DQ Typical Characteristics (25_C Unless Noted) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.10 30 N-Channel rDS(on) ­ On-Resistance ( W ) 20 I S ­ Source Current (A) TJ = 150_C 10 TJ = 25_C 0.08 0.06 ID = 2.8 A 0.04 1 0.00 0.25 0.50 0.75 1.25 1.00 0 1.50 VSD ­ Source-to-Drain Voltage (V) 4 6 8 VGS ­ Gate-to-Source Voltage (V) Threshold Voltage 1.0 2 Single Pulse Power 25 20 Power (W) VGS(th) Variance (V) 0.5 ID = 250 mA 0.0 15 10 ­0.5 5 ­1.0 ­50 0 ­25 0 25 50 75 100 125 150 0.001 0.01 0.1 TJ ­ Temperature (_C) 1 10 30 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 125_C/W 0.02 3. TJM ­ TA = PDMZthJA(t) Single Pulse 0.01 10­4 10­3 4. Surface Mounted 10­2 10­1 1 10 Square Wave Pulse Duration (sec) 26 Siliconix S-47620-Rev. D, 12-Aug-96 30 Si6552DQ Si6552DQ Typical Characteristics (25_C Unless Noted) P-Channel Output Characteristics Transfer Characteristics 20 10 VGS = 8, 7, 6, 5, 4 V 8 3V I D ­ Drain Current (A) I D ­ Drain Current (A) 16 12 8 2V 4 6 4 2 TC = 125_C 25_C ­55_C 0 0 0 2 4 6 8 10 0 VDS ­ Drain-to-Source Voltage (V) 1 2 4 VGS ­ Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1500 0.20 1200 C ­ Capacitance (pF) 0.25 rDS(on) ­ On-Resistance ( W ) 3 0.15 VGS = 2.5 V VGS = 4.5 V 0.10 900 Coss 600 Ciss 0.05 300 0 0 Crss 0 2 4 6 8 10 0 ID ­ Drain Current (A) 1.6 rDS(on) ­ On-Resistance ( W ) (Normalized) VGS ­ Gate-to-Source Voltage (V) 1.8 VGS = 4.5 V ID = 2.5 A 6 4 2 0 0 3 6 9 12 Qg ­ Total Gate Charge (nC) Siliconix S-47620-Rev. D, 12-Aug-96 4 6 8 10 12 VDS ­ Drain-to-Source Voltage (V) Gate Charge 8 2 15 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 2.5 A 1.4 1.2 1.0 0.8 0.6 0.4 ­50 ­25 0 25 50 75 100 125 150 TJ ­ Junction Temperature (_C) 27 Si6552DQ Si6552DQ Typical Characteristics (25_C Unless Noted) Source-Drain Diode Forward Voltage rDS(on) ­ On-Resistance ( W ) I S ­ Source Current (A) 10 On-Resistance vs. Gate-to-Source Voltage 0.20 20 TJ = 150_C TJ = 25_C P-Channel 0.16 0.12 ID = 2.5 A 0.08 0.04 0 1 0 0.5 1.0 1.5 2.0 2.5 3.0 0 VSD ­ Source-to-Drain Voltage (V) 4 6 8 VGS ­ Gate-to-Source Voltage (V) Threshold Voltage 1.0 2 Single Pulse Power 25 20 VGS(th) Variance (V) 0.5 Power (W) ID = 250 mA 0.0 15 10 ­0.5 5 ­1 ­50 0 ­25 0 25 50 75 100 125 150 0.001 0.1 0.01 TJ ­ Temperature (_C) 1 10 30 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 125_C/W 0.02 3. TJM ­ TA = PDMZthJA(t) Single Pulse 0.01 10­4 4. Surface Mounted 10­3 10­2 10­1 1 10 Square Wave Pulse Duration (sec) 28 Siliconix S-47620-Rev. D, 12-Aug-96 30