Si6447DQ - Datasheet Archive

P-Channel Enhancement-Mode MOSFET Product Summary VDS (V) rDS(on) (W) 0.09 @ VGS = 10 V "3.2 0.16 @ VGS = 4.5 V

Si6447DQ Si6447DQ P-Channel Enhancement-Mode MOSFET Product Summary VDS (V) rDS(on) (W) 0.09 @ VGS = 10 V "3.2 0.16 @ VGS = 4.5 V 20 ID (A) "2.4 S* TSSOP-8 D S S G 1 D 2 8 7 Si6447DQ Si6447DQ 3 6 4 5 D S S D G *Source Pins 2, 3, 6 and 7 must be tied common. Top View D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C ID "2.5 TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range "20 IS Continuous Source Current (Diode Conduction)a V "3.2 IDM Pulsed Drain Current Unit A 1.7 1.5 PD 1.0 W TJ, Tstg 55 to 150 _C Symbol Limit Unit RthJA 83 _C/W Thermal Resistance Ratings Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70170. A SPICE Model data sheet is available for this product (FaxBack document #70536). Siliconix S-47958-Rev. D, 15-Apr-96 1 Si6447DQ Si6447DQ Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Symbol Test Condition Min Typ Max VGS(th) VDS = VGS, ID = 250 mA 1.0 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 IDSS VDS = 20 V, VGS = 0 V 1 Zero Gate Voltage Drain Current VDS = 10 V, VGS = 0 V, TJ = 70_C 5 On-State Drain Currenta ID(on) Drain-Source On State Drain Source On-State Resistancea rDS( ) DS(on) Unit Static Gate Threshold Voltage Forward Transconductance a Diode Forward Voltagea VDS = 5 V, VGS = 10 V 2.5 nA mA 14 VDS = 5 V, VGS = 4.5 V V A VGS = 10 V, ID = 3.2 A 0.065 0.09 VGS = 4.5 V, ID = 2.0 A 0.11 0.16 gfs VDS = 15 V, ID = 3.2 A 4.0 VSD IS = 1.7 A, VGS = 0 V 0.9 1.2 14 25 W S V Dynamicb Total Gate Charge Qg VDS = 10 V, VGS = 10 V, ID = 3.2 A nC Gate-Source Charge Qgs Gate-Drain Charge Qgd 3.5 Turn-On Delay Time td(on) 21 40 VDD = 10 V, RL = 10 W , ID ^ 1 A, VGEN = 10 V, RG = 6 W 1A 10 V 12 25 12 30 11 20 IF = 1.7 A, di/dt = 100 A/ms 50 100 Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 2.5 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. 2 Siliconix S-47958-Rev. D, 15-Apr-96 Si6447DQ Si6447DQ Typical Characteristics (25_C Unless Otherwise Noted) Output Characteristics Transfer Characteristics 10 10 VGS = 10, 9, 8, 7, 6, 5 V 4V 8 I D Drain Current (A) I D Drain Current (A) 8 6 4 3V 2 6 4 125_C 2 TC = 25_C 55_C 2V 0 0 0 2 4 6 8 10 0 1 2 3 4 5 VGS Gate-to-Source Voltage (V) VDS Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 2000 0.30 C Capacitance (pF) rDS(on) On-Resistance ( W ) 0.25 VGS = 4.5 V 0.20 0.15 0.10 VGS = 10 V 1500 1000 Coss 500 0.05 0 0 0 4 8 12 16 0 20 ID Drain Current (A) 1.75 VGS = 10 V ID = 3.2 A 1.50 rDS(on) On-Resistance ( W ) (Normalized) 8 6 4 2 0 0 3 6 9 12 Qg Total Gate Charge (nC) Siliconix S-47958-Rev. D, 15-Apr-96 4 8 12 16 20 VDS Drain-to-Source Voltage (V) Gate Charge 10 VGS Gate-to-Source Voltage (V) Ciss Crss 15 On-Resistance vs. Junction Temperature VGS = 10 V ID = 3.2 A 1.25 1.00 0.75 0.50 0.25 0 50 25 0 25 50 75 100 125 150 TJ Junction Temperature (_C) 3 Si6447DQ Si6447DQ Typical Characteristics (25_C Unless Otherwise Noted) Source-Drain Diode Forward Voltage TJ = 150_C 0.8 rDS(on) On-Resistance ( W ) 10 I S Source Current (A) On-Resistance vs. Gate-to-Source Voltage 1.0 20 TJ = 25_C 0.6 ID = 3.2 A 0.4 0.2 0 1 0.52 0.62 0.72 0.82 0.92 1.02 2 VSD Source-to-Drain Voltage (V) 6 8 10 VGS Gate-to-Source Voltage (V) Threshold Voltage 0.55 0.45 4 Single Pulse Power 50 ID = 250 mA 40 0.25 Power (W) VGS(th) Variance (V) 0.35 0.15 0.05 30 20 0.05 10 0.15 0.25 50 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 TJ Temperature (_C) Normalized Effective Transient Thermal Impedance 10 100 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 83_C/W 3. TJM TA = PDMZthJA(t) Single Pulse 0.01 104 103 4. Surface Mounted 102 101 1 10 Square Wave Pulse Duration (sec) 4 Siliconix S-47958-Rev. D, 15-Apr-96 30