NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| SI4931DY | Vishay Siliconix | Dual P-Channel 12-V (D-S) MOSFET |
5 pages, |
Original |  |
|
|||||
| SI4931DY-E3 | Vishay Siliconix | Dual P-Channel 12-V (D-S) MOSFET |
5 pages, |
Original | |
|
|||||
| Si4931DY SPICE Device Model | Vishay | Dual P-Channel 12-V (D-S) MOSFET |
3 pages, |
Original | |
|
|||||
| SI4931DY-T1 | Vishay Siliconix | Dual P-Channel 12-V (D-S) MOSFET |
5 pages, |
Original | |
|
|||||
| SI4931DY-T1-E3 | Vishay Siliconix | Dual P-Channel 12-V (D-S) MOSFET |
5 pages, |
Original | |
|
|||||
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: SPICE Device Model Si4931DY Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET CHARACTERISTICS · P-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate , www.vishay.com 1 SPICE Device Model Si4931DY Vishay Siliconix SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE , www.vishay.com 2 Document Number: 72553 29-Sep-03 SPICE Device Model Si4931DY Vishay Siliconix ... | Original |
3 pages, |
Si4931DY Si4931DY abstract |
|
|||
| Abstract: SPICE Device Model Si4931DY Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET CHARACTERISTICS · P-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate Charge , B, 28-Nov-05 www.vishay.com 1 SPICE Device Model Si4931DY Vishay Siliconix SPECIFICATIONS , Model Si4931DY Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED ... | Original |
3 pages, |
Si4931DY Si4931DY abstract |
|
|||
| Abstract: : Si4931DY-E3 Si4931DY-T1-E3 (with Tape and Reel) D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE , Si4931DY Vishay Siliconix New Product Dual P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT , S-32411-Rev. B, 24-Nov-03 www.vishay.com 1 Si4931DY Vishay Siliconix New Product , Gate-to-Source Voltage (V) Document Number: 72379 S-32411-Rev. B, 24-Nov-03 Si4931DY Vishay Siliconix , Si4931DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage ... | Original |
5 pages, |
SI4931DY-T1-E3 Si4931DY-T1 Si4931DY Si4931DY abstract |
|
|||
| Abstract: SPICE Device Model Si4931DY Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET CHARACTERISTICS · P-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate Charge , B, 28-Nov-05 www.vishay.com 1 SPICE Device Model Si4931DY Vishay Siliconix SPECIFICATIONS , Model Si4931DY Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED ... | Original |
4 pages, |
Si4931DY Si4931DY abstract |
|
|||
| Abstract: : Si4931DY-E3 Si4931DY-T1-E3 (with Tape and Reel) D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE , Si4931DY Vishay Siliconix New Product Dual P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT , S-32411-Rev. B, 24-Nov-03 www.vishay.com 1 Si4931DY Vishay Siliconix New Product , Gate-to-Source Voltage (V) Document Number: 72379 S-32411-Rev. B, 24-Nov-03 Si4931DY Vishay Siliconix , Si4931DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage ... | Original |
6 pages, |
Si4931DY-T1 Si4931DY Si4931DY abstract |
|
|||
| Abstract: Information: Si4931DY-T1-E3 (Lead (Pb)-free) Si4931DY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel , Si4931DY Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS , : 72379 S09-0704-Rev. C, 27-Apr-09 www.vishay.com 1 Si4931DY Vishay Siliconix SPECIFICATIONS TJ , , 27-Apr-09 Si4931DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless otherwise noted 5000 0.08 , www.vishay.com 3 Si4931DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless otherwise noted 0.4 30 ... | Original |
6 pages, |
Si4931DY-T1-E3 Si4931DY Si4931DY abstract |
|
|||
| Abstract: Information: Si4931DY-T1-E3 (Lead (Pb)-free) Si4931DY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel , Si4931DY Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS , : 72379 S09-0704-Rev. C, 27-Apr-09 www.vishay.com 1 Si4931DY Vishay Siliconix SPECIFICATIONS TJ , , 27-Apr-09 Si4931DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless otherwise noted 5000 0.08 , www.vishay.com 3 Si4931DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless otherwise noted 0.4 30 ... | Original |
6 pages, |
Si4931DY-T1-E3 Si4931DY Si4931DY abstract |
|
|||
| Abstract: Information: Si4931DY-T1-E3 (Lead (Pb)-free) Si4931DY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel , Si4931DY Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 12 RDS , Si4931DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate , Characteristics www.vishay.com 2 Document Number: 72379 S09-0704-Rev. C, 27-Apr-09 Si4931DY Vishay , S09-0704-Rev. C, 27-Apr-09 www.vishay.com 3 Si4931DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C ... | Original |
9 pages, |
Si4931DY Si4931DY abstract |
|
|||
| Abstract: SO-8 Si4931DY -12 8 0.018 0.022 Si9934BDY Si9934BDY -12 8 0.035 0.056 0.015 ... | Original |
20 pages, |
Si7309 SI7415DN PowerPACK 1212-8 SI7463DP TP0610KL SUM90P10-19L SUM55P06-19L SUM110P04-05 SUD50P10-43L SUD50P06-15 SI7601DN SiA411DJ SI9933 SI7489DP BS250KL datasheet abstract |
|
|||
| Abstract: V ISHAY INTERTECHN O L O G Y , INC . MOSF ET s LITTLE F O O T ® LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R TM w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs SEMICONDUCTORS Rectifiers Schottky (single, dual) Standard, Fast, and Ultra-Fast Recovery (single, dual) Bridge Superectifier ® Sinterglass Avalanche Diodes High-Power Diodes and Thyristors ... | Original |
80 pages, |
Si1417EDH SPICE Device Model SI8901 Si7617DN SiA906EDJ Si2308BDS Si1869DH si1473dh Si4485DY si7135 SI7149DP si4812b Diode SOT-23 marking 15d datasheet abstract |
|
|||
| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
|||||
| *Nov 28, 2005 *Doc. ID: 76868, S-52446 S-52446 S-52446 S-52446, Rev. B *File Name: Si4931DY_PS.txt and Si4931DY_PS.lib .SUBCKT Si4931DY 4 1 2 M1 3 1 2 2 PMOS W=2607528u L=0.25u M2 2 1 2 4 NMOS W=2607528u L=0.50u R1 4 3 RTEMP 10E-3 10E-3 10E-3 10E-3 CGS 1 2 1200E-12 1200E-12 1200E-12 1200E-12 DBD 4 2 DBD * .MODEL PMOS PMOS ( LEVEL = 3 TOX = 1.7E-8 + RS = 2E-3 RD = 0 NSUB = 2.55E16 55E16 55E16 55E16 + KP = 9E-6 UO = 400 + VMAX = 0 XJ www.datasheetarchive.com/files/vishay/docs/76868/si4931dy.txt |
Vishay | 05/12/2005 | 1.27 Kb | TXT | si4931dy.txt |
| *Nov 28, 2005 *Doc. ID: 78257, S-52446 S-52446 S-52446 S-52446, Rev. B *File Name: Si4931DY_PS.txt and Si4931DY_PS.lib .SUBCKT Si4931DY 4 1 2 M1 3 1 2 2 PMOS W=2607528u L=0.25u M2 2 1 2 4 NMOS W=2607528u L=0.50u R1 4 3 RTEMP 10E-3 10E-3 10E-3 10E-3 CGS 1 2 1200E-12 1200E-12 1200E-12 1200E-12 DBD 4 2 DBD * .MODEL PMOS PMOS ( LEVEL = 3 TOX = 1.7E-8 + RS = 2E-3 RD = 0 NSUB = 2.55E16 55E16 55E16 55E16 + KP = 9E-6 UO = 400 + VMAX = 0 XJ www.datasheetarchive.com/files/vishay/docs/78257/si4931dy.lib |
Vishay | 05/12/2005 | 1.27 Kb | LIB | si4931dy.lib |
| OrCAD Windows Library Part Referen Part Reference Value mplate FLOAT www.datasheetarchive.com/files/vishay/docs/78258/si4931dy.olb |
Vishay | 05/12/2005 | 6 Kb | OLB | si4931dy.olb |
| *Nov 28, 2005 *Doc. ID: 76866, S-52446 S-52446 S-52446 S-52446, Rev. B .SUBCKT Si4931DY 4 1 2 M1 3 1 2 2 PMOS W=2607528u L=0.25u M2 2 1 2 4 NMOS W=2607528u L=0.50u R1 4 3 RTEMP 10E-3 10E-3 10E-3 10E-3 CGS 1 2 1200E-12 1200E-12 1200E-12 1200E-12 DBD 4 2 DBD * .MODEL PMOS PMOS ( LEVEL = 3 TOX = 1.7E-8 + RS = 2E-3 RD = 0 NSUB = 2.55E16 55E16 55E16 55E16 + KP = 9E-6 UO = 400 + VMAX = 0 XJ = 5 www.datasheetarchive.com/files/vishay/docs/76866/si4931dy.txt |
Vishay | 05/12/2005 | 1.28 Kb | TXT | si4931dy.txt |
| * Library of Siliconix subsidiary of Vishay, * $Revision: 1.0 $ * $Author: SRIPADA $ * $Date: 03 FEB 2006 $ *- *$ *Jan 26, 2005 *Doc. ID:76150, Rev. A .SUBCKT 2N7000KL 2N7000KL 2N7000KL 2N7000KL 4 1 2 M1 3 1 2 2 NMOS W=26124u L=0.50u M2 2 1 2 4 PMOS W=26124u L=0.95u R1 4 3 RTEMP 4.5E-1 CGS 1 2 24E-12 24E-12 24E-12 24E-12 DBD 2 4 DBD * .MODEL NMOS NMOS (LEVEL = 3 www.datasheetarchive.com/files/spicemodels/misc/siliconix.lib |
Spice Models | 04/07/2008 | 1556.57 Kb | LIB | siliconix.lib |
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| FDS6875 | FDS6875 Buy | SI4931DY-E3 Buy | Vishay Intertechnology Inc | Close | Power MOSFET | Dual P-Channel 2.5V Specified PowerTrench MOSFET |
| FDS6875 | FDS6875 Buy | SI4931DY-T1-E3 Buy | Vishay Intertechnology Inc | Close | Power MOSFET | Dual P-Channel 2.5V Specified PowerTrench MOSFET |