Si4864DY Si4864DY-T1-E3 Si4864DY-T1-GE3

Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 0.0035 at VGS = 4.5 V 25 0.0047 at VGS =

Si4864DY Si4864DY Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 0.0035 at VGS = 4.5 V 25 0.0047 at VGS = 2.5 V 20 ID (A) 20 · Halogen-free According to IEC 61249-2-21 Available · TrenchFET® Power MOSFETs: 2.5 V Rated · Low 3.5 m RDS(on) · PWM (Qgd and Rg) Optimized APPLICATIONS · Low-Side MOSFET in Synchronous Buck DC/DC Converters in Servers and Routers D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4864DY-T1-E3 Si4864DY-T1-E3 (Lead (Pb)-free) Si4864DY-T1-GE3 Si4864DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a IS TA = 25 °C TA = 70 °C PD 17 20 13 60 2.9 1.6 2.2 1 A 1.3 3.5 TJ, Tstg Operating Junction and Storage Temperature Range V 25 IDM Pulsed Drain Current (10 µs Pulse Width) Maximum Power Dissipationa ID Unit - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t 10 s Steady State Steady State RthJA RthJF Typical Maximum 29 35 67 80 13 Unit 16 °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 71449 S09-0221-Rev. C, 09-Feb-09 www.vishay.com 1 Si4864DY Si4864DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. 0.6 Unit Static VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea Diode Forward Voltage V nA VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C 5 VDS 5 V, VGS = 4.5 V µA 30 A VGS = 4.5 V, ID = 25 A 0.0028 0.0035 VGS = 2.5 V, ID = 20 A RDS(on) Forward Transconductancea 2 ± 100 0.0038 0.0047 gfs VDS = 6 V, ID = 25 A 70 VSD a IS = 2.9 A, VGS = 0 V 0.70 1.1 47 70 S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg VDS = 10 V, VGS = 4.5 V, ID = 25 A 0.5 1.5 Fall Time 240 72 trr 65 150 110 57 80 tf Source-Drain Reverse Recovery Time 44 IF = 2.9 A, dI/dt = 100 A/µs td(off) Turn-Off Delay Time 60 VDD = 10 V, RL = 10 ID 1 A, VGEN = 4.5 V, Rg = 6 tr 2.6 40 td(on) Turn-On Delay Time Rise Time nC 10 13.4 ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 60 VGS = 5 V thru 2.5 V 2V 50 I D - Drain Current (A) I D - Drain Current (A) 50 40 30 20 40 30 20 TC = 125 °C 25 °C 10 10 - 55 °C 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 VGS - Gate-to-Source Voltage (V) Output Characteristics 2.5 Transfer Characteristics Document Number: 71449 S09-0221-Rev. C, 09-Feb-09 Si4864DY Si4864DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 7500 VGS = 2.5 V 0.004 0.003 6000 C - Capacitance (pF) R DS(on) - On-Resistance () 0.005 VGS = 4.5 V 0.002 Ciss 4500 3000 Coss 0.001 1500 0.000 0 Crss 0 10 20 30 40 50 60 0 4 ID - Drain Current (A) 8 20 Capacitance 5 1.6 VDS = 10 V ID = 25 A 4 VGS = 4.5 V ID = 25 A 1.4 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 16 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 3 2 1 1.2 1.0 0.8 0 0 12 24 36 48 0.6 - 50 60 - 25 Qg - Total Gate Charge (nC) 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 0.010 RDS(on) - On-Resistance () 60 I S - Source Current (A) 12 TJ = 150 °C 10 TJ = 25 °C 0.008 0.006 ID = 25 A 0.004 0.002 0.000 1 0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 71449 S09-0221-Rev. C, 09-Feb-09 1.2 0 1 2 3 4 5 6 7 8 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si4864DY Si4864DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 60 50 ID = 250 µA 0.0 40 Power (W) V GS(th) Variance (V) 0.2 - 0.2 - 0.4 30 20 - 0.6 10 - 0.8 - 1.0 - 50 - 25 0 25 50 75 100 125 150 0 10 - 2 10 - 1 1 10 TJ - Temperature (°C) Threshold Voltage 100 600 Time (s) Single Pulse Power Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 2. Per Unit Base = R thJA = 67 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10 - 4 t1 t2 10 - 3 10 - 2 4. Surface Mounted 10 - 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71449. www.vishay.com 4 Document Number: 71449 S09-0221-Rev. C, 09-Feb-09 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1