Si4831DY - Datasheet Archive

New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W)

Si4831DY Si4831DY New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.045 @ VGS = 10 V "5 0.090 @ VGS = 4.5 V "3.5 SCHOTTKY PRODUCT SUMMARY VKA (V) Vf (V) Diode Forward Voltage IF (A) 30 0.53 V @ 3 A 3 S K D A SO-8 A 1 8 K A 2 7 K S 3 6 D G 4 5 D G Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Symbol Limit Drain-Source Voltage (MOSFET) Parameter VDS 30 Reverse Voltage (Schottky) VKA 30 Gate-Source Voltage (MOSFET) VGS "20 Continuous Drain Current (TJ = 150_C) (MOSFET)a, b 150 C) TA = 25_C TA = 70_C Average Foward Current (Schottky) Operating Junction and Storage Temperature Range "20 1.7 IF A 3 IFM Pulsed Foward Current (Schottky) Maximum Power Dissipation (Schottky)a, b "5 IS Continuous Source Current (MOSFET Diode Conduction)a, b V "3.9 IDM Pulsed Drain Current (MOSFET) Maximum Power Dissipation (MOSFET)a, b ID Unit 20 TA = 25_C 2 TA = 70_C 1.28 TA = 25_C PD TA = 70_C 1.83 W 1.17 TJ, Tstg 55 to 150 _C Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. Document Number: 71061 S-61859-Rev. A, 10-Oct-99 www.vishay.com S FaxBack 408-970-5600 2-1 Si4831DY Si4831DY New Product Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Device Symbol Typical Maximum 52 62.5 MOSFET Maximum Junction-to-Ambient (t v 10 sec)a Schottky 56 Maximum Junction-to-Ambient (t = steady state)a Schottky 33 32 RthJF 110 27 MOSFET Maximum Junction-to-Foot 100 91 Schottky 68 82 RthJA MOSFET Unit 40 _C/W Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VDS = VGS, ID = 250 mA Typ Max 1.0 Unit Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain Source On State Resistancea Drain-Source On-State Forward Transconductancea Diode Forward Voltagea V VDS = 0 V, VGS = "20 V "100 VDS = 24 V, VGS = 0 V 1 VDS = 24 V, VGS = 0 V, TJ = 75_C 10 VDS w 5 V, VGS = 10 V 20 nA mA A VGS = 10 V, ID = 5 A 0.036 0.045 VGS = 4.5 V, ID = 3.5 A 0.060 0.090 gfs VDS = 15 V, ID = 5 A 9 VSD IS = 1.7 A, VGS = 0 V 0.75 1.2 10 20 VDS = 15 V VGS = 5 V ID = 5 A 15 V, 5 V, 5 4.5 rDS( ) DS(on) W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time trr 3.6 13 30 37 70 14 30 35 IF = 1.7 A, di/dt = 100 A/ms 25 15 VDD = 15 V, RL = 15 W 15 V, ID ^ 1 A, VGEN = 10 V RG = 6 W 1A 10 V, tf Source-Drain Reverse Recovery Time nC C 70 Typ Max ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Forward Voltage Drop Symbol VF Test Condition Min IF = 3 A 0.485 0.53 IF = 3 A, TJ = 125_C 0.42 0.47 Vr = 30 V Junction Capacitance www.vishay.com S FaxBack 408-970-5600 2-2 Irm CT 0.008 0.4 5 6.5 20 Vr = 15 V 102 V 0.1 Vr = 30 V, TJ = 75_C Vr = 30 V, TJ = 125_C Maximum R M i Reverse Leakage Current L k C Unit mA A pF Document Number: 71061 S-61859-Rev. A, 10-Oct-99 Si4831DY Si4831DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET Output Characteristics Transfer Characteristics 20 20 VGS = 10 thru 5 V 16 I D Drain Current (A) I D Drain Current (A) 16 12 4V 8 4 3V 12 8 TC = 125_C 4 25_C 55_C 0 0 0 2 4 6 8 10 0 1 VDS Drain-to-Source Voltage (V) 2 3 4 5 VGS Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1500 0.16 0.12 C Capacitance (pF) r DS(on) On-Resistance ( W ) Ciss 1200 VGS = 4.5 V 0.08 VGS = 10 V 0.04 900 600 Coss 300 0 Crss 0 0 4 8 12 16 0 20 6 18 24 30 VDS Drain-to-Source Voltage (V) ID Drain Current (A) Gate Charge On-Resistance vs. Junction Temperature 1.8 10 VDS = 10 V ID = 5.7 A 1.6 8 r DS(on) On-Resistance ( W ) (Normalized) V GS Gate-to-Source Voltage (V) 12 6 4 2 0 0 4 8 12 Qg Total Gate Charge (nC) Document Number: 71061 S-61859-Rev. A, 10-Oct-99 16 20 VGS = 10 V ID = 5.7 A 1.4 1.2 1.0 0.8 0.6 0.4 50 25 0 25 50 75 100 125 150 TJ Junction Temperature (_C) www.vishay.com S FaxBack 408-970-5600 2-3 Si4831DY Si4831DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.20 r DS(on) On-Resistance ( W ) I S Source Current (A) 20 10 TJ = 150_C TJ = 25_C 0.16 0.12 0.08 ID = 5.7 A 0.04 0 1 0.00 0.25 0.50 0.75 1.00 1.25 0 1.50 2 VSD Source-to-Drain Voltage (V) 6 8 10 VGS Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power, Junction-to-Ambient 40 0.8 0.6 32 ID = 250 mA 0.4 24 Power (W) V GS(th) Variance (V) 4 0.2 0.0 16 0.2 8 0.4 0.6 50 0 25 0 25 50 75 100 125 150 0.01 0.1 TJ Temperature (_C) 1 10 30 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: PDM 0.1 0.1 t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 82_C/W 0.02 3. TJM TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 104 103 102 101 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 71061 S-61859-Rev. A, 10-Oct-99 Si4831DY Si4831DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 104 103 102 101 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) SCHOTTKY Reverse Current vs. Junction Temperature Forward Voltage Drop 40 5 1 0.1 30 V I F Forward Current (A) I R Reverse Current (mA) 10 10 V 0.01 TJ = 150_C 1 TJ = 25_C 0.001 0.0001 0.1 0 25 50 75 100 125 150 0 TJ Junction Temperature (_C) 0.4 0.6 0.8 Capacitance 500 CT Junction Capacitance (pF) 0.2 VF Forward Voltage Drop (V) 400 300 200 100 0 0 6 12 18 24 30 VKA Reverse Voltage (V Document Number: 71061 S-61859-Rev. A, 10-Oct-99 www.vishay.com S FaxBack 408-970-5600 2-5 Si4831DY Si4831DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) SCHOTTKY Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: PDM 0.1 0.1 t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 91_C/W 0.02 3. TJM TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 104 103 102 101 1 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 104 www.vishay.com S FaxBack 408-970-5600 2-6 103 102 101 Square Wave Pulse Duration (sec) 1 10 Document Number: 71061 S-61859-Rev. A, 10-Oct-99 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. 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