Si4532ADY Si4532DY Si4532ADY-T1-E3 Si4532DY-T1-E3 Si4532DY-T1

Vishay Siliconix Si4532ADY vs. Si4532DY Description: Package: Pin Out: N- and P-Channel 30 V (D-S) MOSFET SO-8 Identical Part

Specification Comparison Vishay Siliconix Si4532ADY Si4532ADY vs. Si4532DY Si4532DY Description: Package: Pin Out: N- and P-Channel 30 V (D-S) MOSFET SO-8 Identical Part Number Replacements Si4532ADY-T1-E3 Si4532ADY-T1-E3 Replaces Si4532DY-T1-E3 Si4532DY-T1-E3 Si4532ADY-T1-E3 Si4532ADY-T1-E3 Replaces Si4532DY-T1 Si4532DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA = 25 °C ID Continuous Drain Current TA = 70 °C IDM Pulsed Drain Current Continuous Source Current (MOSFET Diode Conduction) TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient Si4532ADY Si4532ADY N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch IS PD Power Dissipation Tj and Tstg RthJA Si4532DY Si4532DY 30 - 30 ± 20 ± 20 4.9 - 3.9 3.9 - 3.1 20 - 20 1.7 - 1.7 2 1.3 - 55 to 150 62.5 20 - 30 ± 20 ± 20 3.9 - 3.5 3.1 - 2.8 20 - 20 1.7 - 1.7 2 1.3 - 55 to 150 62.5 Unit V A W °C °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Si4532ADY Si4532ADY Symbol Min Typ Si4532DY Si4532DY Max Min Typ Max Unit Static Gate-Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS VGS = 10 V VGS = - 10 V VGS = 10 V VGS = - 10 V Drain-Source On-Resistance VGS = 4.5 V VGS = - 4.5 V On-State Drain Current ID(on) rDS(on) Forward Transconductance gfs Diode Forward Voltage VSD Document Number: 74223 Revision: 31-Oct-06 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 1.0 - 1.0 1.0 - 1.0 V ± 100 ± 100 1 -1 20 - 20 ± 100 ± 100 1 -1 15 - 15 0.044 0.062 0.062 0.105 11 5 0.80 - 0.82 0.053 0.080 0.075 0.135 1.2 - 1.2 nA µA A 0.043 0.066 0.075 0.125 7 5 0.8 - 0.8 0.065 0.085 0.095 0.19 S 1.2 - 1.2 V www.vishay.com 1 Specification Comparison Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Si4532ADY Si4532ADY Symbol Min Si4532DY Si4532DY Typ Max N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 8 10 1.4 2 1.2 1.9 16 20 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 12 8 10 9 23 21 8 10 25 27 20 15 20 18 45 40 15 20 40 40 Min Typ Max 9.8 8.7 2.1 1.9 1.6 1.3 15 15 9 7 6 9 18 14 6 8 52 50 15 15 18 18 27 27 15 15 80 80 Unit Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd nC Switching td(on) Turn-On Time tr td(off) Turn-Off Time tf Source-Drain Reverse Recovery Time trr ns Specification comparisons are supplied as a courtesy to compare two devices and do not constitute a commercial product datasheet or any guarantee of identical performance. Designers should refer to the appropriate datasheets of the same number for guaranteed specification limits. www.vishay.com 2 Document Number: 74223 Revision: 31-Oct-06