NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
Si4464DY AN609 - Datasheet Archive
Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using
Si4464DY Si4464DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. Note: For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform. R-C THERMAL MODEL FOR TANK CONFIGURATION R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Case Foot RT1 14.1485 N/A 8.9304 RT2 4.1521 N/A 1.5162 RT3 22.9344 N/A 2.3665 RT4 43.5098 N/A 8.1941 Thermal Capacitance (Joules/°C) Junction to Ambient Case Foot CT1 25.4527 m N/A 8.8723 m 596.8180 u CT2 2.8451 m N/A CT3 119.5623 m N/A 1.3340 CT4 2.0081 N/A 122.7521 m This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 70347 Revision 19-Mar-07 www.vishay.com 1 Si4464DY Si4464DY_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION R-C VALUES FOR FILTER CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Case Foot RF1 4.5565 N/A 1.5444 RF2 19.6836 N/A 9.7583 RF3 20.1722 N/A 7.2909 RF4 40.2650 N/A 2.4519 Thermal Capacitance (Joules/°C) Junction to Ambient Case Foot 524.9641 u CF1 1.8142 m N/A CF2 18.0387 m N/A 7.2006 m CF3 122.8158 m N/A 92.2570 m CF4 2.0098 N/A 720.1278 m Note: NA indicates not applicable Reference: [1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002 www.vishay.com 2 Document Number: 70347 Revision 19-Mar-07 Si4464DY Si4464DY_RC Vishay Siliconix Document Number: 70347 Revision 19-Mar-07 www.vishay.com 3