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SI4431BDY-T1-GE3 Vishay Siliconix Small Signal Field-Effect Transistor, 5.7A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
SI4431BDY-T1-E3 Vishay Siliconix Small Signal Field-Effect Transistor, 5.7A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8

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Part : SI4431BDY-T1-E3 Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : 5,000 Best Price : $0.3609 Price Each : $0.7714
Part : SI4431BDY-T1-E3 Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : - Best Price : €0.2661 Price Each : €0.5272
Part : SI4431BDY-T1-E3 Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : - Best Price : $0.2623 Price Each : $0.3556
Part : SI4431BDY-T1-E3 Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : - Best Price : $0.2847 Price Each : $0.3175
Part : SI4431BDY-T1-GE3 Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : - Best Price : $0.3372 Price Each : $0.4129
Part : SI4431BDY-T1-E3 Supplier : Vishay Intertechnology Manufacturer : Newark element14 Stock : - Best Price : $0.4070 Price Each : $0.4390
Part : SI4431BDY-T1-E3 Supplier : Vishay Intertechnology Manufacturer : Newark element14 Stock : - Best Price : $0.3940 Price Each : $0.92
Part : SI4431BDY-T1-E3 Supplier : Vishay Intertechnology Manufacturer : Newark element14 Stock : 1,972 Best Price : $0.3940 Price Each : $0.92
Part : SI4431BDY-T1-GE3 Supplier : Vishay Intertechnology Manufacturer : Newark element14 Stock : - Best Price : $0.50 Price Each : $0.92
Part : SI4431BDY-T1-GE3 Supplier : Vishay Intertechnology Manufacturer : Newark element14 Stock : - Best Price : $0.4070 Price Each : $0.4390
Part : SI4431BDY-T1-E3 Supplier : Vishay Intertechnology Manufacturer : Future Electronics Stock : 7 Best Price : $0.23 Price Each : $0.2450
Part : SI4431BDY-T1-E3 Supplier : Vishay Intertechnology Manufacturer : Future Electronics Stock : 2,500 Best Price : $0.23 Price Each : $0.24
Part : SI4431BDY-T1-E3 Supplier : Vishay Intertechnology Manufacturer : Bristol Electronics Stock : 863 Best Price : - Price Each : -
Part : SI4431BDY-T1-E3 Supplier : Vishay Intertechnology Manufacturer : Bristol Electronics Stock : 2,000 Best Price : - Price Each : -
Part : SI4431BDY-T1-E3 Supplier : Vishay Siliconix Manufacturer : Bristol Electronics Stock : 1,105 Best Price : - Price Each : -
Part : SI4431BDY-T1-E3 Supplier : Vishay Intertechnology Manufacturer : Chip1Stop Stock : 476 Best Price : $0.5222 Price Each : $0.7195
Part : SI4431BDY-T1-E3 Supplier : Vishay Intertechnology Manufacturer : element14 Asia-Pacific Stock : - Best Price : $0.47 Price Each : $1.1920
Part : SI4431BDY-T1-E3 Supplier : Vishay Intertechnology Manufacturer : Farnell element14 Stock : - Best Price : £0.3250 Price Each : £0.7690
Part : SI4431BDY-T1-GE3 Supplier : Vishay Intertechnology Manufacturer : Farnell element14 Stock : - Best Price : £0.8040 Price Each : £0.8130
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Si4431BDY Datasheet

Part Manufacturer Description PDF Type
SI4431BDY Vishay Siliconix MOSFETs Original
Si4431BDY SPICE Device Model Vishay P-Channel 30-V (D-S) MOSFET Original
SI4431BDY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 5.7A 8-SOIC Original
SI4431BDY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 5.7A 8SOIC Original

Si4431BDY

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Specification Comparison Vishay Siliconix Si4431BDY vs. Si4431DY Description: P-Channel, 30 V (D-S) MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si4431BDY Replaces Si4431DY Si4431BDY-E3 (Lead (Pb)-free version) Replaces Si4431DY Si4431BDY-T1 Replaces Si4431DY-T1 Si4431BDY-T1-E3 (Lead (Pb)-free version) Replaces Si4431DY-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Si4431BDY Si4431DY Drain-Source Voltage VDS - 30 - 30 Vishay Siliconix
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4431BDY 4431DY 4431BDY-E3 4431BDY-T1 4431DY-T1 4431BDY-T1-E3
Abstract: replaces Si4431BDY-T1 Si4431CDY-T1-E3 replaces Si4431BDY-T1-E3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C , Specification Comparison Vishay Siliconix Si4431CDY vs. Si4431BDY Description: Package: Pin , Junction-to-Ambient IDM IS PD TJ and Tstg RthJA Si4431BDY - 30 ± 20 - 7.5 - 6.0 - 30 - 2.1 2.5 1.6 , PARAMETER SYMBOL MIN. SI4431CDY TYP. MAX. MIN. - 2.5 ± 100 -1 Si4431BDY TYP. - , - 5 V for Si4431BDY and - 4.5 V for Si4431CDY. Specification comparisons are supplied as a Vishay Siliconix
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SI4431 4431CDY 4431CDY-T1-E3
Abstract: Si4431BDY New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V , Symbol Typical 38 70 22 Maximum 50 85 28 Unit _C/W 1 Si4431BDY Vishay Siliconix , -22437-Rev. A, 20-Jan-03 Si4431BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance , Si4431BDY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage , -Jan-03 Si4431BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance Vishay Siliconix
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S-22437--R
Abstract: Si4431BDY New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V , -22437-Rev. A, 20-Jan-03 www.vishay.com 1 Si4431BDY New Product Vishay Siliconix SPECIFICATIONS , Gate-to-Source Voltage (V) Document Number: 72092 S-22437-Rev. A, 20-Jan-03 Si4431BDY New Product , Si4431BDY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage , Duration (sec) 10 100 600 Document Number: 72092 S-22437-Rev. A, 20-Jan-03 Si4431BDY New Vishay Siliconix
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Abstract: Specification Comparison Vishay Siliconix Si4431BDY vs. Si4431ADY Description: P-Channel, 30 V (D-S) MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si4431BDY Replaces Si4431ADY Si4431BDY-E3 (Lead (Pb)-free version) Replaces Si4431ADY Si4431BDY-T1 Replaces Si4431ADY-T1 Si4431BDY-T1-E3 (Lead (Pb)-free version) Replaces Si4431ADY-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Si4431BDY Si4431ADY Drain-Source Voltage VDS - 30 - Vishay Siliconix
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4431ADY 4431ADY-T1
Abstract: Ordering Information: Si4431BDY-T1-E3 (Lead (Pb)-free) Si4431BDY-T1-GE3 (Lead (Pb)-free and Halogen-free , Si4431BDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , : 72092 S09-0131-Rev. C, 02-Feb-09 www.vishay.com 1 Si4431BDY Vishay Siliconix SPECIFICATIONS TJ , S09-0131-Rev. C, 02-Feb-09 Si4431BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless , : 72092 S09-0131-Rev. C, 02-Feb-09 www.vishay.com 3 Si4431BDY Vishay Siliconix TYPICAL Vishay Siliconix
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4431BDY-T1-GE3 S09-0131-R 2011/65/EU 2002/95/EC JS709A
Abstract: Information: Si4431BDY-T1 Si4431BDY-T1-E3 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA , Si4431BDY Vishay Siliconix New Product P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT , . Document Number: 72092 S-70315-Rev. B, 12-Feb-07 www.vishay.com 1 Si4431BDY Vishay Siliconix , -Feb-07 Si4431BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.08 1600 C - , www.vishay.com 3 Si4431BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 Vishay Siliconix
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si4431b S-70315-R
Abstract: SPICE Device Model Si4431BDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET CHARACTERISTICS · P-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate Charge , -Mar-03 www.vishay.com 1 SPICE Device Model Si4431BDY Vishay Siliconix SPECIFICATIONS (TJ = 25°C UNLESS , -Mar-03 SPICE Device Model Si4431BDY Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS Vishay Siliconix
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72190
Abstract: Information: Si4431BDY-T1-E3 (Lead (Pb)-free) Si4431BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel , Si4431BDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , -0131-Rev. C, 02-Feb-09 www.vishay.com 1 Si4431BDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless , Characteristics Document Number: 72092 S09-0131-Rev. C, 02-Feb-09 Si4431BDY Vishay Siliconix TYPICAL , S09-0131-Rev. C, 02-Feb-09 www.vishay.com 3 Si4431BDY Vishay Siliconix TYPICAL Vishay Siliconix
Original
Abstract: SPICE Device Model Si4431BDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET CHARACTERISTICS · P-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate Charge , -51095Rev. B, 13-Jun-05 www.vishay.com 1 SPICE Device Model Si4431BDY Vishay Siliconix SPECIFICATIONS , -51095Rev. B, 13-Jun-05 SPICE Device Model Si4431BDY Vishay Siliconix COMPARISON OF MODEL WITH MEASURED Vishay Siliconix
Original
S-51095R
Abstract: Information: Si4431BDY-T1-E3 (Lead (Pb)-free) Si4431BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel , Si4431BDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , -0131-Rev. C, 02-Feb-09 www.vishay.com 1 Si4431BDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless , Characteristics Document Number: 72092 S09-0131-Rev. C, 02-Feb-09 Si4431BDY Vishay Siliconix TYPICAL , S09-0131-Rev. C, 02-Feb-09 www.vishay.com 3 Si4431BDY Vishay Siliconix TYPICAL Vishay Siliconix
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Abstract: Information: Si4431BDY-T1 Si4431BDY-T1-E3 (Lead (Pb)-free) P-Channel MOSFET 8 7 6 5 D D D D G S ABSOLUTE , Si4431BDY New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS , : 72092 S-70315-Rev. B, 12-Feb-07 www.vishay.com 1 Si4431BDY Vishay Siliconix SPECIFICATIONS TJ = , Number: 72092 S-70315-Rev. B, 12-Feb-07 Si4431BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C , Si4431BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 50 0.4 V GS(th Vishay Siliconix
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A1818
Abstract: Information: Si4431BDY-T1-E3 (Lead (Pb)-free) Si4431BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel , Si4431BDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 30 RDS(on , 1 Si4431BDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter , Characteristics www.vishay.com 2 Document Number: 72092 S09-0131-Rev. C, 02-Feb-09 Si4431BDY Vishay , -0131-Rev. C, 02-Feb-09 www.vishay.com 3 Si4431BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C Vishay Siliconix
Original
Abstract: Information: Si4431BDY-T1-E3 (Lead (Pb)-free) Si4431BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel , Si4431BDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 30 RDS(on , 1 Si4431BDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter , Characteristics www.vishay.com 2 Document Number: 72092 S09-0131-Rev. C, 02-Feb-09 Si4431BDY Vishay , -0131-Rev. C, 02-Feb-09 www.vishay.com 3 Si4431BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C Vishay Siliconix
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Abstract: SSM4439 Competitor Competitor Part Number Si4431ADY Vishay Si4431BDY Vishay Si4435DY Vishay South Sea Semiconductor
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AO3401 AO4606 semiconductor cross reference AP40N03H STM8405 AP4411 AP60N03H Fairchild Cross Reference STU3055L2 APM2034NU STU4030NL APM2512NU APM3011NU STU3030PL
Abstract: LTC3808EDE ITH SW TRACK/SS BG 8 MP Si4431BDY 10 L 1.5uH VOUT 1.5V IOUT 2A Linear Technology
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SSOP-16 LTC3809 LTC3809-1 LTC3808 1.5k 275v X2 Si7540DP Si4860DY DN382
Abstract: SSM4439 Competitor Competitor Part Number Si4431ADY Vishay Si4431BDY Vishay Si4435DY Vishay South Sea Semiconductor
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SSM4420 STM4953 STM9435 ao3411 EQUIVALENT STM8405 AP4936M FDD6685 stm4532 APM3020PU APM3023N STU3030NL APM4210K SDM4410 APM4220K
Abstract: Single -30 20 0.02 0.035 9.1 Si4431BDY Single -30 20 0.03 0.05 7.5 , 0.019 11.4 61 Si4431BDY Single -30 20 0.03 0.05 7.5 Si4435BDY Single Vishay Siliconix
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Siliconix mosfet guide Si9371 power selector guide Si8901EDB Si6875DQ nimh spice model charge TSSOP-16
Abstract: 6.04k 0.12ÂuF 0.0047ÂuF Q1: Si4431BDY Q2: FDC645N 26.7k 40071 TA01 40071f 1 Linear Technology
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LTC4007-1 LTC1960 LTC3711 LTC4006 LTC4007 LTC4008
Abstract: 0.12uF 0.0047uF Q1: Si4431BDY Q2: FDC645N 26.7k 40071 TA01 40071f 1 LTC4007-1 W Linear Technology
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12v 100 amp battery load AcP 9805 diode 4007 12v dc to dc mobile charger circuit LTC4007EUFD-1 ntc thermistor 10k LTC4100
Abstract: Q1: Si4431BDY Q2: FDC645N CHARGING CURRENT MONITOR 4008 TA01 4008fa 1 LTC4008 U , : Si4431BDY Q2: FDC645N Q4: Si7423DN Z1 VALUE SIZED FOR ABSOLUTE MAXIMUM ADAPTER VOLTAGE Figure 10 Linear Technology
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NTC-8 series capacitor LT 4008 NTC 150k Intel 4008 in 4008 diode NTC 8 LT1769 LTC1778
Abstract: Li-Ion BATTERY CSP BAT 3.01k 3.01k PROG 0.0047F 26.7k Q1: Si4431BDY Q2: FDC645N , : Si4431BDY Q2: FDC645N Q4: Si7423DN Z1 VALUE SIZED FOR ABSOLUTE MAXIMUM ADAPTER VOLTAGE Figure 10 Linear Technology
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LTC4008-1 LTC4008EGN ptc thermistor 14m thermistor ntc 45k PTC 1k thermistor conversion table NTC-8
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