Si4429EDY - Datasheet Archive

New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V

Si4429EDY Si4429EDY New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V 13.0 D TrenchFETr Power MOSFET D VGS Surge Protection to 18 V D ESD Protected: 4000 V 0.0125 @ VGS = 4.5 V 12.0 APPLICATIONS 0.0195 @ VGS = 2.5 V 9.0 VDS (V) 30 D Battery Switch D Load Switch D SO-8 S 1 8 5.5 kW D G S 2 7 D S 3 6 D G 4 5 D Top View S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "12 Unit Continuous Drain Current (TJ = 150_C)a _ TA = 25_C 9.4 13.0 ID TA = 70_C Pulsed Drain Current 10.0 7.5 IDM continuous Source Current (Diode Conduction)a IS TA = 70_C Operating Junction and Storage Temperature Range PD A 50 2.5 1.3 3.0 TA = 25_C Maximum Power Dissipationa V 1.5 1.9 0.9 TJ, Tstg W _C 55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Foot (Drain) Steady State Steady State RthJA RthJF Maximum 32 t v 10 sec Maximum Junction-to-Ambienta Typical 42 68 85 15 Unit 18 _C/W C/W Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 70709 S-04712-Rev. A, 24-Sep-01 www.vishay.com 1 Si4429EDY Si4429EDY New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA Typ Max Unit 0.60 Static Gate Threshold Voltage Gate-Body Leakage IDSS On-State Drain Currenta VDS = 0 V, VGS = "12 V IGSS Zero Gate Voltage Drain Current V ID(on) "20 VDS = 24 V, VGS = 0 V 1 VDS = 24 V, VGS = 0 V, TJ = 55_C 5 VDS v 5 V, VGS = 10 V 30 A VGS = 10 V, ID = 13.0 A 0.0105 VGS = 4.5 V, ID = 12.0 A 0.0105 0.0125 0.0160 0.0195 gfs VDS = 15 V, ID = 13.0 A 40 VSD IS = 2.5 A, VGS = 0 V 0.8 1.2 51 75 rDS(on) Forward Transconductancea Diode Forward 0.0086 VGS = 2.5 V, ID = 9.0 A Drain-Source On-State Resistancea Voltagea mA W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 12.0 Turn-On Delay Time td(on) 14 21 19 29 54 80 41 62 Rise Time VDS = 15 V, VGS = 4.5 V, ID = 13.0 A tr Turn-Off Delay Time VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W td(off) Fall Time 9 tf nC ms m Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate-Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 10,000 1,000 16 I GSS Gate Current (mA) I GSS Gate Current (mA) 20 12 8 4 10 TJ = 150_C 1 TJ = 25_C 0.1 0 0.01 0 6 12 18 24 VGS Gate-to-Source Voltage (V) www.vishay.com 2 100 30 0 5 10 15 20 VGS Gate-to-Source Voltage (V) Document Number: 70709 S-04712-Rev. A, 24-Sep-01 Si4429EDY Si4429EDY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 50 50 VGS = 10 thru 3 V 40 I D Drain Current (A) I D Drain Current (A) 40 30 2V 20 10 30 20 TC = 125_C 10 25_C 55_C 0 0 2 4 6 8 0 0.0 10 0.5 VDS Drain-to-Source Voltage (V) 1.0 On-Resistance vs. Drain Current 2.5 Capacitance 9000 7500 0.04 C Capacitance (pF) r DS(on) On-Resistance ( W ) 2.0 VGS Gate-to-Source Voltage (V) 0.05 0.03 VGS = 2.5 V 0.02 VGS = 4.5 V 0.01 Ciss 6000 4500 3000 Coss 1500 VGS = 10 V 0.00 Crss 0 0 10 20 30 40 0 50 6 12 18 24 30 VDS Drain-to-Source Voltage (V) ID Drain Current (A) Gate Charge On-Resistance vs. Junction Temperature 5 1.6 VDS = 15 V ID = 13.0 A 4 r DS(on) On-Resistance (W) (Normalized) V GS Gate-to-Source Voltage (V) 1.5 3 2 1 0 0 10 20 30 40 Qg Total Gate Charge (nC) Document Number: 70709 S-04712-Rev. A, 24-Sep-01 50 60 1.4 VGS = 10 V ID = 13.0 A 1.2 1.0 0.8 0.6 50 25 0 25 50 75 100 125 150 TJ Junction Temperature (_C) www.vishay.com 3 Si4429EDY Si4429EDY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.080 r DS(on) On-Resistance ( W ) I S Source Current (A) 50 TJ = 150_C TJ = 25_C 10 0.064 0.048 ID = 13.0 A 0.032 0.016 0.000 1 0 0.3 0.6 0.9 1.2 0 1.5 VSD Source-to-Drain Voltage (V) 2 3 4 5 6 VGS Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power, Junction-to-Ambient 0.6 50 0.4 40 ID = 250 mA Power (W) V GS(th) Variance (V) 1 0.2 0.0 30 29 10 0.2 0.4 50 25 0 25 50 75 100 125 150 0 102 101 TJ Temperature (_C) 1 10 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 68_C/W 3. TJM TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 104 www.vishay.com 4 103 102 101 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 70709 S-04712-Rev. A, 24-Sep-01 Si4429EDY Si4429EDY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 104 Document Number: 70709 S-04712-Rev. A, 24-Sep-01 103 102 101 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5