NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
Si3879DV AN609 - Datasheet Archive
Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using
Si3879DV Si3879DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. Note: For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform. R-C THERMAL MODEL FOR TANK CONFIGURATION R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Mosfet Ambient Schottky Case Foot Mosfet RT1 8.9501 10.2453 N/A 14.6689 Foot Schottky 8.2123 RT2 27.7425 26.9788 N/A 4.6383 8.6349 RT3 25.6011 32.1590 N/A 9.0894 24.6709 RT4 42.7063 55.6169 N/A 8.6034 23.4819 Thermal Capacitance (Joules/°C) Junction to Ambient Mosfet Ambient Schottky Case Foot Mosfet Foot Schottky CT1 644.1619 u 283.5449 u N/A 15.5665 m 159.6755 m CT2 38.1412 m 37.2940 m N/A 387.3313 u 109.0039 u CT3 4.7543 m 2.5499 m N/A 2.9876 m 2.7372 m CT4 1.6519 1.3305 N/A 6.1516 m 1.0823 m This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 70466 Revision: 03-May-07 www.vishay.com 1 Si3879DV Si3879DV_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION R-C VALUES FOR FILTER CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Mosfet Ambient Schottky Case Foot Mosfet Foot Schottky RF1 10.5377 16.5738 N/A 7.6550 12.8683 RF2 30.6744 35.8269 N/A 16.8137 27.2699 RF3 22.8344 20.7607 N/A 8.4709 16.7347 RF4 40.9535 51.8386 N/A 4.0604 8.1271 Thermal Capacitance (Joules/°C) Junction to Ambient Mosfet Ambient Schottky Case Foot Mosfet Foot Schottky CF1 508.9049 u 330.1880 u N/A 370.6514 u 112.1569 u CF2 3.5874 m 3.1878 m N/A 1.6792 m 737.7182 u CF3 46.4679 m 78.4614 m N/A 8.1080 m 1.2459 m CF4 1.6802 1.4037 N/A 79.1993 m 137.9870 m Note: NA indicates not applicable Reference: [1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002 www.vishay.com 2 Document Number: 70466 Revision: 03-May-07 Si3879DV Si3879DV_RC Vishay Siliconix Document Number: 70466 Revision: 03-May-07 www.vishay.com 3 Si3879DV Si3879DV_RC Vishay Siliconix www.vishay.com 4 Document Number: 70466 Revision: 03-May-07