Si3499DV 2002/95/EC Si3499DV-T1-E3 Si3499DV-T1-GE3 - Datasheet Archive

 

Vishay Siliconix P-Channel 1.5 V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) 0.023 at VGS = - 4.5 V - 6.2

 

Si3499DV Si3499DV Vishay Siliconix P-Channel 1.5 V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) 0.023 at VGS = - 4.5 V - 6.2 0.036 at VGS = - 1.8 V - 5.2 0.048 at VGS = - 1.5 V -8 -7 0.029 at VGS = - 2.5 V Qg (Typ.) - 5.0 28 · Halogen-free According to IEC 61249-2-21 Definition · TrenchFET® Power MOSFET: 1.5 V Rated · Ultra-Low On-Resistance · 100 % Rg Tested · Compliant to RoHS Directive 2002/95/EC 2002/95/EC APPLICATIONS · Load Switch for Portable Devices TSOP-6 Top View 1 6 (4) S 3 mm 2 5 3 4 (3) G 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3499DV-T1-E3 Si3499DV-T1-E3 (Lead (Pb)-free) Si3499DV-T1-GE3 Si3499DV-T1-GE3 (Lead (Pb)-free and Halogen-free) Marking Code: B3xxx P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS -8 Gate-Source Voltage VGS ±5 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C Continuous Source Current (Diode Conduction)a IS TA = 25 °C TA = 85 °C PD -7 - 5.3 - 3.9 - 20 - 1.7 1.1 1.0 0.6 A - 0.9 2.0 TJ, Tstg Operating Junction and Storage Temperature Range V - 3.6 IDM Pulsed Drain Current Maximum Power Dissipationa ID Unit - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t5s Steady State Steady State RthJA RthJF Typical Maximum 45 62.5 90 110 25 Unit 30 °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 73138 S09-2110-Rev. B, 12-Oct-09 www.vishay.com 1 Si3499DV Si3499DV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. - 0.35 Unit Static VGS(th) VDS = VGS, ID = - 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 5 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage - 0.75 V ± 100 nA VDS = - 8 V, VGS = 0 V -1 VDS = - 8 V, VGS = 0 V, TJ = 85 °C - 10 VDS = - 5 V, VGS = - 4.5 V - 20 A VGS = - 4.5 V, ID = - 7 A Drain-Source On-State Resistancea 0.019 0.023 VGS = - 2.5 V, ID = - 6.2 A 0.024 0.029 VGS = - 1.8 V, ID = - 5.2 A RDS(on) 0.028 0.036 0.048 VGS = - 1.5 V, ID = - 3 A Diode Forward Voltage a VDS = - 5 V, ID = - 7 A IS = - 1.7 A, VGS = 0 V - 0.63 - 1.1 28 42 VDS = - 4 V, VGS = - 4.5 V, ID = - 7 A 28 VSD Forward Transconductance 0.035 gfs a µA 2.9 S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 5.8 4 8.5 VDD = - 4 V, RL = 4 ID - 1 A, VGEN = - 4.5 V, Rg = 6 tr Rise Time Fall Time trr 65 315 165 40 IF = - 1.7 A, dI/dt = 100 A/µs 100 210 tf Source-Drain Reverse Recovery Time 40 110 td(off) Turn-Off Delay Time 13 27 td(on) Turn-On Delay Time nC 70 ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 30 VGS = 5 V thru 2 V 25 I D - Drain Current (A) I D - Drain Current (A) 25 20 1.5 V 15 10 20 15 10 TC = 125 °C 5 5 25 °C 1V - 55 °C 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 5 0 0.0 0.4 0.8 1.2 1.6 2.0 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 73138 S09-2110-Rev. B, 12-Oct-09 Si3499DV Si3499DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3500 0.10 Ciss 0.06 VGS = 1.5 V VGS = 1.8 V 0.04 2500 C - Capacitance (pF) R DS(on) - On-Resistance () 3000 0.08 VGS = 2.5 V 2000 1500 Coss 1000 Crss 0.02 500 VGS = 4.5 V 0 0.00 0 5 10 15 20 25 0 30 1 2 5 6 7 8 125 150 Capacitance 6 1.6 VDS = 4 V ID = 7 A VGS = 4.5 V ID = 7 A 5 4 3 2 (Normalized) 1.4 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 4 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current 1.2 1.0 0.8 1 0 0 6 12 18 24 30 0.6 - 50 36 - 25 0 Qg - Total Gate Charge (nC) 25 50 75 100 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 30 0.10 10 0.08 0.06 TJ = 150 °C ID = 7 A TJ = 25 °C 1 0.1 0.0 RDS(on) - I S - Source Current (A) 3 0.04 0.02 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 73138 S09-2110-Rev. B, 12-Oct-09 1.2 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si3499DV Si3499DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 40 32 ID = 250 µA 0.2 Power (W) V GS(th) Variance (V) 0.3 0.1 24 TA = 25 °C 16 0.0 8 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 0 10 -2 150 10 -1 1 10 100 TJ - Temperature (°C) Threshold Voltage 600 Time (s) Single Pulse Power 100 *R DS(on) Limited* IDM Limited ID - Drain Current (A) 10 1 mS 10 mS 1 0.1 ID(on) Limited 100 mS TC = 25 °C Single Pulse 1S 10 S DC BVDSS Limited 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 360 °C/W 0.02 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 73138 S09-2110-Rev. B, 12-Oct-09 Si3499DV Si3499DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73138. Document Number: 73138 S09-2110-Rev. B, 12-Oct-09 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1