Si3460DV 2002/95/EC Si3460DV-T1-E3 Si3460DV-T1-GE3 - Datasheet Archive

 

Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 0.027 at VGS = 4.5 V 6.8 0.032 at VGS =

 

Si3460DV Si3460DV Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 0.027 at VGS = 4.5 V 6.8 0.032 at VGS = 2.5 V 6.3 0.038 at VGS = 1.8 V 20 ID (A) 5.7 · Halogen-free According to IEC 61249-2-21 Definition · TrenchFET® Power MOSFET · 100 % Rg Tested · Compliant to RoHS directive 2002/95/EC 2002/95/EC TSOP-6 Top View 1 6 2 5 3 3 mm (1, 2, 5, 6) D 4 (3) G 2.85 mm (4) S Ordering Information: Si3460DV-T1-E3 Si3460DV-T1-E3 (Lead (Pb)-free) Si3460DV-T1-GE3 Si3460DV-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a IS TA = 25 °C TA = 70 °C PD 5.1 5.4 4.1 20 1.7 A 0.9 2.0 1.1 1.3 0.73 TJ, Tstg Operating Junction and Storage Temperature Range V 6.8 IDM Pulsed Drain Current Maximum Power Dissipationa ID Unit - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t5s Steady State Steady State RthJA RthJF Typical Maximum 45 62.5 90 110 25 Unit 30 °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 71329 S09-0531-Rev. D, 06-Apr-09 www.vishay.com 1 Si3460DV Si3460DV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit 0.45 ± 100 nA Static VGS(th) VDS = VGS, ID = 1 mA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) VDS 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 5.1 A 0.023 0.027 RDS(on) VGS = 2.5 V, ID = 4.7 A 0.027 0.032 VGS = 1.8 V, ID = 2 A 0.032 0.038 gfs VDS = 10 V, ID = 5.1 A 25 VSD IS = 1.7 A, VGS = 0 V 0.8 1.2 13.5 20 Gate Threshold Voltage Drain-Source On-State Resistance a Forward Transconductancea Diode Forward Voltage a V VDS = 16 V, VGS = 0 V 1 VDS = 16 V, VGS = 0 V, TJ = 70 °C 5 µA 20 A S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 10 V, VGS = 4.5 V, ID = 5.1 A 2.2 Rg Gate Resistance 0.5 15 Source-Drain Reverse Recovery Time 70 trr IF = 1.7 A, dI/dt = 100 A/µs 140 60 40 tf 60 30 td(off) Turn-Off Delay Time Fall Time 30 30 VDD = 10 V, RL = 10 ID 1 A, VGEN = 4.5 V, Rg = 6 tr Rise Time 2.9 td(on) Turn-On Delay Time nC 2.3 80 ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 20 TC = - 55 °C VGS = 5 V thru 2 V 16 I D - Drain Current (A) I D - Drain Current (A) 16 12 1.5 V 8 25 °C 125 °C 12 8 4 4 1V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 3.5 4.0 0 0.0 0.4 0.8 1.2 1.6 2.0 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 71329 S09-0531-Rev. D, 06-Apr-09 Si3460DV Si3460DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2000 0.06 1600 0.04 C - Capacitance (pF) RDS(on) - On-Resistance () 0.05 VGS = 1.8 V VGS = 2.5 V 0.03 0.02 VGS = 4.5 V Ciss 1200 800 Crss 400 0.01 Coss 0 0.00 0 4 8 12 16 0 20 4 ID - Drain Current (A) 8 16 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.6 5 VGS = 4.5 V ID = 5.1 A VDS = 10 V ID = 5.1 A 1.4 3 2 (Normalized) 4 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 12 1.2 1.0 0.8 1 0.6 - 50 0 0 3 6 9 12 15 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) Gate Charge On-Resistance vs. Junction Temperature 0.06 20 0.05 I S - Source Current (A) R DS(on) - On-Resistance () TJ = 150 °C 10 TJ = 25 °C 0.04 ID = 5.1 A 0.03 0.02 0.01 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Document Number: 71329 S09-0531-Rev. D, 06-Apr-09 www.vishay.com 3 Si3460DV Si3460DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.2 30 0.1 24 0.0 Power (W) VGS(th) Variance (V) ID = 1 mA - 0.1 18 TA = 25 °C 12 - 0.2 6 - 0.3 - 0.4 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 150 0 10 - 2 10 - 1 1 10 100 600 Time (s) Single Pulse Power Threshold Voltage 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 90 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71329. www.vishay.com 4 Document Number: 71329 S09-0531-Rev. D, 06-Apr-09 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1