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| Part | Manufacturer | Description | Type | Ordering |
| SI3433BDV | Vishay Siliconix | MOSFETs |
5 pages, |
Original | |
| Si3433BDV | Vishay Telefunken | P-channel 1.8-v (g-s) Mosfet |
3 pages, |
Original | |
| Si3433BDV SPICE Device Model | Vishay | P-Channel 1.8-V (G-S) MOSFET |
3 pages, |
Original | |
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Specification Comparison Vishay Siliconix Si3433CDV Si3433CDV vs. Si3433BDV Description: Package: Pin Out: P-Channel, 20-V (D-S) MOSFET TSOP-6 Identical Part Number Replacements: Si3433CDV-T1-E3 Si3433CDV-T1-E3 replaces Si3433BDV-T1-E3 ABSOLUTE MAXIMUM RATINGS TA = 25 癈, unless otherwise noted SYMBOL Si3433CDV Si3433CDV Si3433BDV Drain-Source Voltage PARAMETER VDS - 20 - 20 Gate-Source Voltage VGS � � , 癈, unless otherwise noted PARAMETER SYMBOL Si3433CDV Si3433CDV MIN. TYP. Si3433BDV MAX. MIN. ... | Original |
1 pages, |
Si3433CDV Si3433BDV si3433 Si3433BDV-T1-E3 Si3433CDV abstract |
| Abstract: Specification Comparison Vishay Siliconix Si3433BDV vs. Si3433DV Si3433DV Description: P-Channel, 1.8 V (G-S) MOSFET Package: TSOP-6 Pin Out: Identical Part Number Replacements: Si3433BDV-T1 Replaces Si3433DV-T1 Si3433DV-T1 Si3433BDV-T1-E3 (Lead (Pb)-free version) Replaces Si3433DV-T1 Si3433DV-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 癈, unless otherwise noted Parameter Symbol Si3433BDV Si3433DV Si3433DV Drain-Source Voltage , 110 癈/W Si3433BDV Si3433DV Si3433DV PD W SPECIFICATIONS TJ = 25 癈, unless otherwise noted ... | Original |
1 pages, |
Si3433DV Si3433BDV-T1 Si3433BDV si3433 SI3433BDV-T1-E3 Si3433DV-T1 Si3433BDV-T1-E3 Si3433BDV abstract |
| Abstract: SPICE Device Model Si3433BDV Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET CHARACTERISTICS · P-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate Charge , B, 21-Mar-05 www.vishay.com 1 SPICE Device Model Si3433BDV Vishay Siliconix SPECIFICATIONS , SPICE Device Model Si3433BDV Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS ... | Original |
3 pages, |
Si3433BDV Si3433BDV abstract |
| Abstract: SPICE Device Model Si3433BDV Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET CHARACTERISTICS · P-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate Charge , www.vishay.com 1 SPICE Device Model Si3433BDV Vishay Siliconix SPECIFICATIONS (TJ = 25°C UNLESS , www.vishay.com 2 Document Number: 72188 18-Mar-03 SPICE Device Model Si3433BDV Vishay Siliconix ... | Original |
3 pages, |
Si3433BDV Si3433BDV abstract |
| Abstract: ) D Ordering Information: Si3433BDV-T1 Si3433BDV-T1-E3 (Lead Free) Marking Code: P-Channel , Si3433BDV Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W , : 72027 S-40575-Rev. C, 29-Mar-04 www.vishay.com 1 Si3433BDV Vishay Siliconix SPECIFICATIONS , Si3433BDV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current , 5 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si3433BDV Vishay Siliconix ... | Original |
5 pages, |
Si3433BDV-T1-E3 Si3433BDV-T1 Si3433BDV Si3433BDV abstract |
| Abstract: SPICE Device Model Si3433BDV Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET CHARACTERISTICS · P-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate Charge , B, 21-Mar-05 www.vishay.com 1 SPICE Device Model Si3433BDV Vishay Siliconix SPECIFICATIONS , SPICE Device Model Si3433BDV Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS ... | Original |
4 pages, |
Si3433BDV Si3433BDV abstract |
| Abstract: : Si3433BDV-T1-E3 (Lead (Pb)-free) Si3433BDV-T1-GE3 (Lead (Pb)-free and Halogen-free) Marking Code: B3xxx , Si3433BDV Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , : 72027 S09-0766-Rev. D, 04-May-09 www.vishay.com 1 Si3433BDV Vishay Siliconix SPECIFICATIONS , : 72027 S09-0766-Rev. D, 04-May-09 Si3433BDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless , www.vishay.com 3 Si3433BDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 ... | Original |
6 pages, |
Si3433BDV-T1-GE3 Si3433BDV-T1-E3 Si3433BDV Si3433BDV abstract |
| Abstract: ) D Ordering Information: Si3433BDV-T1 Si3433BDV-T1-E3 (Lead Free) Marking Code: P-Channel , Si3433BDV Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W , : 72027 S-40575-Rev. C, 29-Mar-04 www.vishay.com 1 Si3433BDV Vishay Siliconix SPECIFICATIONS , Si3433BDV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current , 5 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si3433BDV Vishay Siliconix ... | Original |
6 pages, |
Si3433BDV-T1-E3 Si3433BDV-T1 Si3433BDV Si3433BDV abstract |
| Abstract: SI3422DV SI3422DV SI3424DV SI3424DV SI3424DV SI3424DV SI3430DV SI3430DV SI3433BDV SI3433BDV SI3433BDV SI3433BDV SI3434DV SI3434DV SI3434DV SI3434DV ... | Original |
6 pages, |
VN610L BSH108 FDN306P cross reference FDG329N fdn304pz IRLML6302 SILICONIX 2N7002 bss84 zetex FDN304P cross reference VN10KM equivalent 2n7002 siliconix equivalent of BS170 BS170 datasheet abstract |
| Abstract: 2.85 mm Ordering Information: Si3433BDV-T1-E3 (Lead (Pb)-free) Si3433BDV-T1-GE3 (Lead (Pb)-free and , Si3433BDV Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on , S09-0766-Rev. D, 04-May-09 www.vishay.com 1 Si3433BDV Vishay Siliconix SPECIFICATIONS TJ = 25 °C , , 04-May-09 Si3433BDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.15 2500 , Number: 72027 S09-0766-Rev. D, 04-May-09 www.vishay.com 3 Si3433BDV Vishay Siliconix TYPICAL ... | Original |
10 pages, |
Si3433BDV Si3433BDV abstract |
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| * Library of Siliconix subsidiary of Vishay, * $Revision: 1.0 $ * $Author: SRIPADA $ * $Date: 03 FEB 2006 $ *- *$ *Jan 26, 2005 *Doc. ID:76150, Rev. A .SUBCKT 2N7000KL 2N7000KL 2N7000KL 2N7000KL 4 1 2 M1 3 1 2 2 NMOS W=26124u L=0.50u M2 2 1 2 4 PMOS W=26124u L=0.95u R1 4 3 RTEMP 4.5E-1 CGS 1 2 24E-12 24E-12 24E-12 24E-12 DBD 2 4 DBD * .MODEL NMOS NMOS (LEVEL = 3 www.datasheetarchive.com/files/spicemodels/misc/siliconix.lib |
Spice Models | 04/07/2008 | 1556.57 Kb | LIB | siliconix.lib |
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| FDC365P | FDC365P Buy | SI3433BDV-T1 Buy | Vishay Intertechnology Inc | Close | Power MOSFET | -35V P-Channel Power Trench MOSFET |
| FDC365P | FDC365P Buy | SI3433BDV-T1-E3 Buy | Vishay Intertechnology Inc | Close | Power MOSFET | -35V P-Channel Power Trench MOSFET |
| FDC365P | FDC365P Buy | SI3433BDV-T1-GE3 Buy | Vishay Intertechnology Inc | Close | Power MOSFET | -35V P-Channel Power Trench MOSFET |
| FDC604P | FDC604P Buy | SI3433BDV Buy | Vishay Siliconix Inc | Close | Power MOSFET | P-Channel 1.8V Specified PowerTrench MOSFET |
| FDC604P | FDC604P Buy | SI3433BDV-T1 Buy | Vishay Intertechnology Inc | Close | Power MOSFET | P-Channel 1.8V Specified PowerTrench MOSFET |
| FDC604P | FDC604P Buy | SI3433BDV-T1-E3 Buy | Vishay Intertechnology Inc | Close | Power MOSFET | P-Channel 1.8V Specified PowerTrench MOSFET |
| FDC640P | FDC640P Buy | SI3433BDV Buy | Vishay Siliconix Inc | Close | Power MOSFET | P-Channel 2.5V PowerTrench Specified MOSFET |
| FDC640P | FDC640P Buy | SI3433BDV-T1 Buy | Vishay Intertechnology Inc | Close | Power MOSFET | P-Channel 2.5V PowerTrench Specified MOSFET |
| FDC640P | FDC640P Buy | SI3433BDV-T1-E3 Buy | Vishay Intertechnology Inc | Close | Power MOSFET | P-Channel 2.5V PowerTrench Specified MOSFET |
| FDC640P | FDC640P Buy | SI3433BDV-T1-GE3 Buy | Vishay Intertechnology Inc | Close | Power MOSFET | P-Channel 2.5V PowerTrench Specified MOSFET |