NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| SI3433 | Vishay Telefunken |
4 pages, |
Original |  |
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| SI3433BDV | Vishay Siliconix | MOSFETs |
5 pages, |
Original | |
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| Si3433BDV | Vishay Telefunken | P-channel 1.8-v (g-s) Mosfet |
3 pages, |
Original | |
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| Si3433BDV SPICE Device Model | Vishay | P-Channel 1.8-V (G-S) MOSFET |
3 pages, |
Original | |
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| Si3433DV | Vishay Intertechnology, Inc. | P-Channel 1.8-V (G-S) MOSFET |
3 pages, |
Original | |
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| SI3433DV | Vishay Telefunken |
4 pages, |
Original | |
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| Si3433DV SPICE Device Model | Vishay | P-Channel xx-V (x-S) MOSFET |
3 pages, |
Original | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Si3433 New Product Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.042 @ VGS = - 4.5 V - 5.6 0.057 @ VGS = - 2.5 V - 4.8 0.080 @ VGS = - 1.8 V , , 03-Apr-00 www.vishay.com 2-1 Si3433 New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C , S-00624-Rev. A, 03-Apr-00 Si3433 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS , ) www.vishay.com 2-3 Si3433 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED ... | Original |
4 pages, |
Si3433 datasheet abstract |
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| Abstract: Si3433 New Product Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.042 @ VGS = - 4.5 V - 5.6 0.057 @ VGS = - 2.5 V - 4.8 0.080 @ VGS = - 1.8 V , , 03-Apr-00 www.vishay.com 2-1 Si3433 New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C , S-00624-Rev. A, 03-Apr-00 Si3433 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS , ) www.vishay.com 2-3 Si3433 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED ... | Original |
5 pages, |
Si3433 datasheet abstract |
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| Abstract: Specification Comparison Vishay Siliconix Si3433BDV vs. Si3433DV Description: P-Channel, 1.8 V (G-S) MOSFET Package: TSOP-6 Pin Out: Identical Part Number Replacements: Si3433BDV-T1 Replaces Si3433DV-T1 Si3433BDV-T1-E3 (Lead (Pb)-free version) Replaces Si3433DV-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 癈, unless otherwise noted Parameter Symbol Si3433BDV Si3433DV Drain-Source Voltage , 110 癈/W Si3433BDV Si3433DV PD W SPECIFICATIONS TJ = 25 癈, unless otherwise noted ... | Original |
1 pages, |
Si3433DV Si3433BDV-T1 Si3433BDV si3433 SI3433BDV-T1-E3 Si3433DV-T1 Si3433BDV-T1-E3 Si3433BDV abstract |
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| Abstract: SPICE Device Model Si3433DV P-Channel 1.8-V (G-S) MOSFET Characteristics · P-channel Vertical DMOS · Macro-Model (Sub-Circuit) · Level 3 MOS · Applicable for Both Linear and Switch Mode · Applicable Over a -55 to 125°C Temperature Range · Models Gate Charge, Transient, and Diode Reverse , : 71523 1 SPICE Device Model Si3433DV Model Evaluation P-Channel Device (TJ=25°C Unless Otherwise , Siliconix 4/16/01 Document: 71523 2 SPICE Device Model Si3433DV Comparison of Model with Measured ... | Original |
3 pages, |
Si3433DV P-Channel 1.8V MOSFET Si3433DV abstract |
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| Abstract: QUICK INDEX NEW IN THIS ISSUE! (Detailed Index - See Pages 3-24) AD9272 AD9272 Analog Front End, iMEMS® Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585 Active RF Product and Antennas . . . . . . . . . . . . 529-592 Rotary Position Sensor and SinglFuseTM Thin Film Chip Fuses . . . Pgs. 2000, 2071 Semiconductors ... | Original |
2704 pages, |
600va ups circuit diagrams ANA 618 20010 TV SHARP IC TDA 9381 PS 600va numeric ups circuit diagrams led clock circuit diagram at89s52 24pu LG color tv Circuit Diagram tda 9370 circuit diagram wireless spy camera schematic diagram atx Power supply 500w AD9272 AD9272 abstract |
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| Abstract: 1.15 Si3433DV Single P -20 0.042 0.1 0.08 5.6 11.5 2 Si3443DV Si3443DV Single P , 0.17 2.4 5.5 2 Si3433DV Single P TSOP-6 -20 0.042 11.5 2 Si3435DV Si3435DV ... | Original |
29 pages, |
BS250 TN2460L SUP85N10-10 SUP85N06-05 Si1021R SUP75P05-08 sup75n08 SI3459DV Si3863DV SUB75N08-09L sub70n03 Si4427DY Si4730 Si4835DY Si4831DY Si4831DY abstract |
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| Abstract: V ISHAY INTERTECHN O L O G Y , INC . MOSF ET s LITTLE F O O T ® LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R TM w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs SEMICONDUCTORS Rectifiers Schottky (single, dual) Standard, Fast, and Ultra-Fast Recovery (single, dual) Bridge Superectifier ® Sinterglass Avalanche Diodes High-Power Diodes and Thyristors ... | Original |
80 pages, |
Si1417EDH SPICE Device Model SI8901 Si7617DN SiA906EDJ Si2308BDS Si1869DH si1473dh Si4485DY si7135 SI7149DP si4812b Diode SOT-23 marking 15d datasheet abstract |
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| Abstract: Specification Comparison Vishay Siliconix Si3433CDV vs. Si3433BDV Description: Package: Pin Out: P-Channel, 20-V (D-S) MOSFET TSOP-6 Identical Part Number Replacements: Si3433CDV-T1-E3 replaces Si3433BDV-T1-E3 ABSOLUTE MAXIMUM RATINGS TA = 25 癈, unless otherwise noted SYMBOL Si3433CDV Si3433BDV Drain-Source Voltage PARAMETER VDS - 20 - 20 Gate-Source Voltage VGS � � , 癈, unless otherwise noted PARAMETER SYMBOL Si3433CDV MIN. TYP. Si3433BDV MAX. MIN. ... | Original |
1 pages, |
Si3433CDV Si3433BDV si3433 Si3433BDV-T1-E3 Si3433CDV abstract |
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| Abstract: SPICE Device Model Si3433BDV Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET CHARACTERISTICS · P-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate Charge , B, 21-Mar-05 www.vishay.com 1 SPICE Device Model Si3433BDV Vishay Siliconix SPECIFICATIONS , SPICE Device Model Si3433BDV Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS ... | Original |
4 pages, |
Si3433BDV Si3433BDV abstract |
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| Abstract: : Si3433BDV-T1-E3 (Lead (Pb)-free) Si3433BDV-T1-GE3 (Lead (Pb)-free and Halogen-free) Marking Code: B3xxx , Si3433BDV Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , : 72027 S09-0766-Rev. D, 04-May-09 www.vishay.com 1 Si3433BDV Vishay Siliconix SPECIFICATIONS , : 72027 S09-0766-Rev. D, 04-May-09 Si3433BDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless , www.vishay.com 3 Si3433BDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 ... | Original |
6 pages, |
Si3433BDV-T1-GE3 Si3433BDV-T1-E3 Si3433BDV Si3433BDV abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| *Nov 10, 2008 *Doc. ID: 64552, ECN S-82676 S-82676 S-82676 S-82676, Rev. A *File Name: Si3433CDV_PS.txt and Si3433CDV_PS.lib *This document is intended as a SPICE modeling guideline and does not *constitute a commercial product data sheet. Designers should refer to the *appropriate data sheet of the same number for guaranteed specification *limits. .SUBCKT Si3433CDV D G S M1 3 GX S S PMOS W= 1660000u L= 0.25u M2 S GX S D NMOS W= 1660000u L= 4.624e-07 R1 D 3 5.030e-03 TC=1.850e-02,9.469e-06 CGS GX S 2.466e-10 CGD GX D 1.000e-12 www.datasheetarchive.com/files/vishay/docs/64552/si3433cd.txt |
Vishay | 11/11/2008 | 1.29 Kb | TXT | si3433cd.txt |
| *Nov 10, 2008 *Doc. ID: 64553, ECN S-82676 S-82676 S-82676 S-82676, Rev. A *File Name: Si3433CDV_PS.txt and Si3433CDV_PS.lib *This document is intended as a SPICE modeling guideline and does not *constitute a commercial product data sheet. Designers should refer to the *appropriate data sheet of the same number for guaranteed specification *limits. .SUBCKT Si3433CDV D G S M1 3 GX S S PMOS W= 1660000u L= 0.25u M2 S GX S D NMOS W= 1660000u L= 4.624e-07 R1 D 3 5.030e-03 TC=1.850e-02,9.469e-06 CGS GX S 2.466e-10 CGD GX D 1.000e-12 www.datasheetarchive.com/files/vishay/docs/64553/si3433cd.lib |
Vishay | 11/11/2008 | 1.29 Kb | LIB | si3433cd.lib |
| OrCAD Windows Library Part Reference Value mplate FLOAT www.datasheetarchive.com/files/vishay/docs/64554/si3433cd.olb |
Vishay | 11/11/2008 | 8 Kb | OLB | si3433cd.olb |
| *Nov 10, 2008 *Doc. ID: 64551, ECN S-82676 S-82676 S-82676 S-82676, Rev. A *This document is intended as a SPICE modeling guideline and does not *constitute a commercial product data sheet. Designers should refer to the *appropriate data sheet of the same number for guaranteed specification *limits. .SUBCKT Si3433CDV D G S M1 3 GX S S PMOS W= 1660000u L= 0.25u M2 S GX S D NMOS W= 1660000u L= 4.624e-07 R1 D 3 5.030e-03 1.850e-02 9.469e-06 CGS GX S 2.466e-10 CGD GX D 1.000e-12 RG G GY 3 RTCV 100 S 1e6 -2.175e-04 6 www.datasheetarchive.com/files/vishay/docs/64551/si3433cd.txt |
Vishay | 11/11/2008 | 1.23 Kb | TXT | si3433cd.txt |
| .,CMDSH-3TR 8.0 1.0 L1 IND., IHPL2525CZER-4R7 IHPL2525CZER-4R7 IHPL2525CZER-4R7 IHPL2525CZER-4R7 VISHAY, IHLP2525CZER4R7M11 IHLP2525CZER4R7M11 IHLP2525CZER4R7M11 IHLP2525CZER4R7M11 9.0 1.0 Q2 P-Channel Mosfet, Si3433DV, TSOP6 VISHAY, Si3433DV 10.0 1.0 R2 Res., Chip, 130K, 1%, 0805 VISHAY,CRCW0805130KFKED CRCW0805130KFKED CRCW0805130KFKED CRCW0805130KFKED 11.0 1.0 R3 www.datasheetarchive.com/download/65000367-364772ZC/1424a.zip (1424Acf .xls) |
Linear | 05/05/2010 | 814.17 Kb | ZIP | 1424a.zip |
| * Library of Siliconix subsidiary of Vishay, * $Revision: 1.0 $ * $Author: SRIPADA $ * $Date: 03 FEB 2006 $ *- *$ *Jan 26, 2005 *Doc. ID:76150, Rev. A .SUBCKT 2N7000KL 2N7000KL 2N7000KL 2N7000KL 4 1 2 M1 3 1 2 2 NMOS W=26124u L=0.50u M2 2 1 2 4 PMOS W=26124u L=0.95u R1 4 3 RTEMP 4.5E-1 CGS 1 2 24E-12 24E-12 24E-12 24E-12 DBD 2 4 DBD * .MODEL NMOS NMOS (LEVEL = 3 www.datasheetarchive.com/files/spicemodels/misc/siliconix.lib |
Spice Models | 04/07/2008 | 1556.57 Kb | LIB | siliconix.lib |
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| FDC365P | FDC365P Buy | SI3433BDV-T1 Buy | Vishay Intertechnology Inc | Close | Power MOSFET | -35V P-Channel Power Trench MOSFET |
| FDC365P | FDC365P Buy | SI3433BDV-T1-E3 Buy | Vishay Intertechnology Inc | Close | Power MOSFET | -35V P-Channel Power Trench MOSFET |
| FDC365P | FDC365P Buy | SI3433BDV-T1-GE3 Buy | Vishay Intertechnology Inc | Close | Power MOSFET | -35V P-Channel Power Trench MOSFET |
| FDC365P | FDC365P Buy | SI3433BVD Buy | Vishay Intertechnology Inc | Close | Power MOSFET | -35V P-Channel Power Trench MOSFET |
| FDC604P | FDC604P Buy | SI3433BDV Buy | Vishay Siliconix Inc | Close | Power MOSFET | P-Channel 1.8V Specified PowerTrench MOSFET |
| FDC604P | FDC604P Buy | SI3433BDV-T1 Buy | Vishay Intertechnology Inc | Close | Power MOSFET | P-Channel 1.8V Specified PowerTrench MOSFET |
| FDC604P | FDC604P Buy | SI3433BDV-T1-E3 Buy | Vishay Intertechnology Inc | Close | Power MOSFET | P-Channel 1.8V Specified PowerTrench MOSFET |
| FDC604P | FDC604P Buy | SI3433BVD Buy | Vishay Intertechnology Inc | Close | Power MOSFET | P-Channel 1.8V Specified PowerTrench MOSFET |
| FDC640P | FDC640P Buy | SI3433BDV Buy | Vishay Siliconix Inc | Close | Power MOSFET | P-Channel 2.5V PowerTrench Specified MOSFET |
| FDC640P | FDC640P Buy | SI3433BDV-T1 Buy | Vishay Intertechnology Inc | Close | Power MOSFET | P-Channel 2.5V PowerTrench Specified MOSFET |
| On Semiconductor Part | Industry Part | Manufacturer | Type |
| CPH6347-TL-H Buy | Si3433CDV Buy | Vishay Intertechnology | Direct |
| Toshiba Part | Industry Part | Manufacturer | Description | Category |