NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Specification Comparison Vishay Siliconix Si3424BDV vs. Si3424DV Si3424DV Description: Package: Pin Out: N-Channel 30-V (D-S) MOSFET TSOP-6 Identical Part Number Replacements Si3424BDV-T1-E3 Replaces Si3424DV-T1-E3 Si3424DV-T1-E3 Si3424BDV-T1-E3 Replaces Si3424DV-T1 Si3424DV-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Si3424BDV Si3424DV Si3424DV Drain-Source Voltage VDS , Symbol Si3424BDV Min Typ Si3424DV Si3424DV Max Min 3 ± 100 1 Typ 0.8 Max Unit ... | Original |
1 pages, |
Si3424DV-T1-E3 Si3424DV-T1 Si3424DV Si3424BDV-T1-E3 Si3424BDV Si3424BDV abstract |
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| Abstract: SPICE Device Model Si3424BDV Vishay Siliconix N-Channel 30V (D-S) MOSFET CHARACTERISTICS · N-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate Charge , A, 23-Jul-07 www.vishay.com 1 SPICE Device Model Si3424BDV Vishay Siliconix SPECIFICATIONS , : 74890 S-71494Rev. A, 23-Jul-07 SPICE Device Model Si3424BDV Vishay Siliconix COMPARISON OF MODEL ... | Original |
3 pages, |
Si3424BDV Si3424BDV abstract |
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| Abstract: Specification Comparison Vishay Siliconix Si3424CDV Si3424CDV vs. Si3424BDV Description: Package: Pin Out: N-Channel, 30 V (D-S) MOSFET TSOP-6 Identical Part Number Replacements: Si3424CDV-T1-GE3 Si3424CDV-T1-GE3 Replaces Si3424BDV-T1-E3 Si3424CDV-T1-GE3 Si3424CDV-T1-GE3 Replaces Si3424BDV-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C , to 150 62.5 Si3424BDV 30 ± 20 7 5.6 30 1.74 2.1 1.3 - 55 to 150 60 W °C °C/W A UNIT V , V SYMBOL MIN. TYP. MAX. MIN. Si3424BDV TYP. MAX. UNIT Note · NS denotes not specified in original ... | Original |
1 pages, |
Si3424CDV Si3424BDV Si3424CDV abstract |
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| Abstract: SPICE Device Model Si3424BDV Vishay Siliconix N-Channel 30V (D-S) MOSFET CHARACTERISTICS · N-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate Charge , A, 23-Jul-07 www.vishay.com 1 SPICE Device Model Si3424BDV Vishay Siliconix SPECIFICATIONS , : 74890 S-71494Rev. A, 23-Jul-07 SPICE Device Model Si3424BDV Vishay Siliconix COMPARISON OF MODEL ... | Original |
4 pages, |
Si3424BDV Si3424BDV abstract |
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| Abstract: 2.85 mm N-Channel MOSFET Ordering Information: Si3424BDV-T1-E3 (Lead (Pb)-free) Si3424BDV-T1-GE3 , Si3424BDV Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , Number: 74623 S09-0660-Rev. C, 20-Apr-09 www.vishay.com 1 Si3424BDV Vishay Siliconix , reliability. www.vishay.com 2 Document Number: 74623 S09-0660-Rev. C, 20-Apr-09 Si3424BDV Vishay , www.vishay.com 3 Si3424BDV Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted ... | Original |
7 pages, |
Si3424BDV-T1-GE3 Si3424BDV-T1-E3 Si3424BDV Si3424BDV abstract |
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| Abstract: : Si3424BDV-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter , New Product Si3424BDV Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT , B, 24-Dec-07 www.vishay.com 1 New Product Si3424BDV Vishay Siliconix SPECIFICATIONS TJ , Si3424BDV Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 5 30 VGS = , On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si3424BDV Vishay Siliconix ... | Original |
7 pages, |
Si3424BDV-T1-E3 Si3424BDV Si3424BDV abstract |
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| Abstract: : Si3424BDV-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter , New Product Si3424BDV Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT , B, 24-Dec-07 www.vishay.com 1 New Product Si3424BDV Vishay Siliconix SPECIFICATIONS TJ , Si3424BDV Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 5 30 VGS = , On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si3424BDV Vishay Siliconix ... | Original |
7 pages, |
Si3424BDV-T1-E3 Si3424BDV Si3424BDV abstract |
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| Abstract: 2.85 mm N-Channel MOSFET Ordering Information: Si3424BDV-T1-E3 (Lead (Pb)-free) Si3424BDV-T1-GE3 , Si3424BDV Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , Number: 74623 S10-1472-Rev. D, 05-Jul-10 www.vishay.com 1 Si3424BDV Vishay Siliconix , Si3424BDV Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 30 5 VGS = 10 V , www.vishay.com 3 Si3424BDV Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted ... | Original |
7 pages, |
Si3424BDV-T1-GE3 Si3424BDV-T1-E3 Si3424BDV Si3424BDV abstract |
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| Abstract: : Si3424BDV-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter , New Product Si3424BDV Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT , Product Si3424BDV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter , Number: 74623 S-71331 S-71331Rev. A, 02-Jul-07 New Product Si3424BDV Vishay Siliconix TYPICAL , New Product Si3424BDV Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted ... | Original |
7 pages, |
Si3424BDV-T1-E3 Marking 7133-1 Si3424BDV Si3424BDV abstract |
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| Abstract: Code Part # Code (3) (4) S N-Channel MOSFET 2.85 mm Ordering Information: Si3424BDV-T1-E3 (Lead (Pb)-free) Si3424BDV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 , Si3424BDV Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on , Si3424BDV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static , Number: 74623 S10-1472-Rev. D, 05-Jul-10 Si3424BDV Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 ... | Original |
11 pages, |
Si3424BDV Si3424BDV abstract |
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| * Library of Siliconix subsidiary of Vishay, * $Revision: 1.0 $ * $Author: SRIPADA $ * $Date: 03 FEB 2006 $ *- *$ *Jan 26, 2005 *Doc. ID:76150, Rev. A .SUBCKT 2N7000KL 2N7000KL 2N7000KL 2N7000KL 4 1 2 M1 3 1 2 2 NMOS W=26124u L=0.50u M2 2 1 2 4 PMOS W=26124u L=0.95u R1 4 3 RTEMP 4.5E-1 CGS 1 2 24E-12 24E-12 24E-12 24E-12 DBD 2 4 DBD * .MODEL NMOS NMOS (LEVEL = 3 www.datasheetarchive.com/files/spicemodels/misc/siliconix.lib |
Spice Models | 04/07/2008 | 1556.57 Kb | LIB | siliconix.lib |
| On Semiconductor Part | Industry Part | Manufacturer | Type |
| NTGS4141NT1G Buy | SI3424BDV-T1-E3 Buy | Vishay Intertechnology | Close |
| NTGS4141NT1G Buy | SI3424BDV-T1-GE3 Buy | Vishay Intertechnology | Close |