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Part Manufacturer Description Datasheet BUY
EQW012A0A81 GE Critical Power EQW012 Series, Eighth-Brick Power Module, Input Voltage: 48V (36-75Vdc); Output Voltage: 5V; Output Current: 12A; Efficiency: 0.91; Connector Type: Through Hole visit GE Critical Power
EQW020A0F61-13 GE Critical Power EQW020 Series, Eighth-Brick Power Module, Input Voltage: 48V (36-75Vdc); Output Voltage: 3.3V; Output Current: 20A; Efficiency: 0.88; Connector Type: Through Hole visit GE Critical Power
EQW025A0M1Z GE Critical Power EQW025 Series, Eighth-Brick Power Module, Input Voltage: 48V (36-75Vdc); Output Voltage: 1.8V; Output Current: 25A; Efficiency: 0.84; Connector Type: Through Hole visit GE Critical Power
HW006A6A1 GE Critical Power HW006 Series Power Modules; dc-dc Converter, Input Voltage: 36 – 75 Vdc; Output Voltage: 5.0V; Output Current: 6.6A; Connector Type: Through-Hole visit GE Critical Power
HW006A6A-S GE Critical Power HW006 Series Power Modules; dc-dc Converter, Input Voltage: 36 – 75 Vdc; Output Voltage: 5.0V; Output Current: 6.6A; Connector Type: SMT visit GE Critical Power
HW005A0F-S GE Critical Power HW005 Series DC-DC Power Module, Input Voltage: 48 Vdc; Output Voltage: 3.3V; Output Current: 5A; Remote On/Off Logic: Positive; Connector Type: SMT visit GE Critical Power

Semiconductor laser Types Fixed wavelength

Catalog Datasheet MFG & Type PDF Document Tags

NX8570SD

Abstract: NX8570*55 LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570 Series is a 1 550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode module with wavelength monitor , Series Table A: Part number for fixed wavelength product (1/3) Part Number Channel Frequency , Preliminary Data Sheet PL10135EJ01V0DS 5 NX8570 Series Table A: Part number for fixed wavelength , Series Table A: Part number for fixed wavelength product (3/3) Part Number Channel Frequency
NEC
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NX8570SD NX8570*55 transistor NEC D 822 P NX8570SA NX8570SC303-BA NX8570SC307-BA NX8570S

10 gb laser diode

Abstract: ba date sheet LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8571 Series is a 1 550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode module with wavelength monitor , Series Table A: Part number for fixed wavelength product (1/3) Part Number Channel Frequency , Preliminary Data Sheet PL10136EJ01V0DS 5 NX8571 Series Table A: Part number for fixed wavelength , Series Table A: Part number for fixed wavelength product (3/3) Part Number Channel Frequency
NEC
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10 gb laser diode ba date sheet NX8571SA NX8571SC303-BA NX8571SC307-BA NX8571SC311-BA NX8571S

TO8 socket

Abstract: ZnSe EXPOSURE TO BEAM MAXIMUM OUTPUT PULSE DURATION WAVELENGTH CLASS 3B LASER PRODUCT IEC 60825-1:2007 , WAVELENGTH (µm) EMISSION WAVENUMBER K (cm-1) GL12014-2231T-C Condition Ifp fixed Parameter , Typical value Ifp fixed -0.08 cm-1/°C CLASS 3R LASER Invisible Laser Radiation: Avoid Direct , countermeasures. INVISIBLE LASER RADIATION AVOID DIRECT EYE EXPOSURE MAXIMUM OUTPUT PULSE DURATION WAVELENGTH , Quantum Cascade Laser Front: QCLs Back: Set-up examples with exclusive accessories Quantum
Hamamatsu
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TO8 socket ZnSe L12004-2209H-C L12004-2190H-C L12005-1900H-C L12006-1631H-C L12007-1294H-C D-82211

500mW 808nm infrared laser diode driver circuit

Abstract: LM358 laser driver LASER DI O D E G SONY SEMICONDUCTOR ation U I D E Notes · Responsibility , voltage for semiconductor laser or photo diode is exceeded. Temperature limit given for case or , voltage at specified output. Peak oscillation wavelength for operation of laser diode at rated optical , the living body vary with laser light wavelength, output, output waveform (continuous or pulsed waves , thermal action. ii) Visible laser around 430nm in wavelength (absorbed by the retinal pigment of retinal
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500mW 808nm infrared laser diode driver circuit LM358 laser driver SLD323 blue 2SK405 equivalent CD laser pickup assembly laser Semicondutor fiber optic SLD202V

TOSA DWDM

Abstract: TEC TOSA INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT Warning Laser Beam SEMICONDUCTOR LASER AVOID EXPOSURE-Invisible Laser , CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant , DATA SHEET LASER DIODE NX8530NH,NX8531NH 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE 2.5 Gb , are 1 550 nm Multiple Quantum Wells (MQW) structured Distributed Feed-Back (DFB) laser diode module
NEC
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TOSA DWDM TEC TOSA transistor NEC D 587 dwdm tosa PX10160E PL10716EJ01V0DS

TRACETone

Abstract: Oclaro fixed temperature. Wavelength stability is guaranteed by an internal wavelength locker for control to a , CLASS 1M LASER PRODUCT Maximum Power 5.25 mW / +7.2dBm Wavelength 1525 ­ 1565 nm REFERENCE IEC 60825-1 Edition 2.0 MAX POWER 5.25 mW / +7.2dBm WAVELENGTH > 1525 nm CLASS IIIb LASER PRODUCT THIS PRODUCT , Narrow line-width Excellent SMSR Low RIN over full power range Wavelength stabilized for 50GHz or 100GHz , Tunable Transmitter Assembly (TTA) is a high performance continuous wave (CW) tunable laser source
Oclaro
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TL7000ZCD TRACETone Oclaro tunable transmitter assembly optical modulator driver for Mach-Zehnder module ASP-113466-019 TL7000NCD 100GH RS232 EVTL7000 21CFR

CD laser pickup assembly

Abstract: laser diode symbol schematic wavelength of the red semiconductor laser depends on the active layer band gap and thus can be varied from , Numbering System s New Numbering System of Laser Diodes GH 0 65 07 A 2 A Semiconductor laser diode Category (0 : Laser diode, 1 : Frame laser, 2 : Dual wavelength laser) Wavelength (63 , 1 05 D 3 A Semiconductor laser diode Category (5, 6, 7 : Hologram laser) Application (C : CD , emission. The term "LASER DIODE" denotes a device which uses a semiconductor p-n junction in a LASER
Sharp
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laser diode symbol schematic ir3c09 DVD laser pickup assembly DVD pickup assembly DVD optical pick-up assembly schematic diagram tv sharp

Hamamatsu streak c4334

Abstract: C5094 Excitation light source: Laser diode, 410 nm · Fluorescence wavelength: 465 to 475 nm · 1 = 4.25 ns £ , nm · Fluorescence wavelength: 800 to 820 nm · 1 = 391 ps · 2 = 3.469 ns Semiconductor , wafer · Excitation light source: Laser diode, 670 nm · Fluorescence wavelength: 850 to 890 nm · 1 = , Laser-Pumped Dye Laser Laser wavelength Output pulse width Repetition rate Energy per pulse LN203S2 337 , a large amount of trigger jitter, such as nitrogen lasers. Type Laser wavelength* Output pulse
Hamamatsu Photonics
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C4780 Hamamatsu streak c4334 C5094 C1808-03 C4334-01 C4334 C4792 SE-171-41 SSCS1018E06 MAY/99

Z500

Abstract: source Visible-light semiconductor laser Visible-light semiconductor laser (See note 10) (Wavelength 658 nm, 15 mW max., Class 3B) (Wavelength 650 nm, 1 mW max., Class 2) Beam dimensions (See , meet a variety of application needs. Detected image Laser Projector lens SW-CCD Receiver , construction cost Higher measurement accuracy Shorter measurement time Four types of monitor screens Measurement data can be displayed on 4 types of monitor screens. These screens enable analysis and evaluation
OMRON
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Z500 F502-EN2-04 Z500-SW17 F150-M05L F150-VM Z500-MC10E/MC15E Z300-KP
Abstract: PRODUCT SEMICONDUCTOR LASER DANGER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT AVOID EXPOSURE-Invisible Laser Radiation is , CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant , LASER DIODE NX5330SA 1 310 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS DESCRIPTION The NX5330SA is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode NEC
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PL10699EJ01V0DS NX5330SA-AZ
Abstract: PRODUCT SEMICONDUCTOR LASER DANGER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT AVOID EXPOSURE-Invisible Laser Radiation is , CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant , LASER DIODE NX5530SA 1 550 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS DESCRIPTION The NX5530SA is a 1 550 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode NEC
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PL10700EJ01V0DS NX5530SA-AZ

CLASS II LASER EN60825-1

Abstract: laser Displacement linear ccd semiconductor laser (See note 10) Visible-light semiconductor laser (Wavelength 650 nm, (Wavelength 658 nm , objects in a stable manner, the Z500 can meet a variety of application needs. Detected image Laser , accuracy Shorter measurement time Four types of monitor screens Measurement data can be displayed on 4 types of monitor screens. These screens enable analysis and evaluation of measurement data from various , (LASER indicator) Temperature characteristic (See note 9) Degree of protection Ambient operating
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CLASS II LASER EN60825-1 laser Displacement linear ccd laser sensor accuracy automatic door opening sensor S82K-05024 Z500-SW2T Z300-02

NX6311EH-AZ

Abstract: NX6311EH INFORMATION ON THIS PRODUCT DANGER SEMICONDUCTOR LASER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT Warning Laser Beam , Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser , LASER DIODE NX6311EH 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 4 Gb/s FIBER CHANNEL , Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION · 4 G fiber channel FEATURES ·
California Eastern Laboratories
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NX6311EH-AZ PL10631EJ01V0DS
Abstract: MAX WAVELENGTH nm CLASS lllb LASER PRODUCT SEMICONDUCTOR LASER AVOID EXPOSURE-Invisible Laser , with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed , PRELIMINARY DATA SHEET NX6411GH 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION DESCRIPTION LASER DIODE Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD , TC = 25°C 5 3 Differential Efficiency Peak Emission Wavelength Side Mode Suppression Ratio Rise Time Renesas Electronics
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PL10644EJ01V0DS

FND-100Q

Abstract: FND-100 initiated ordnance. Pulsed Laser Diodes - Specialty Products These devices range in wavelength from 850 , performance semiconductor emitters and detectors and their associated electronic circuits and subsystems for advanced applications such as industrial, medical, scientific instrumentation, test equipment, laser range , , Inc. table of contents Emitters Surface Emitting LEDs 2 High Energy QCW Laser Diodes 980nm 2 Pulsed Laser Diodes (Specialty) 2 Pulsed Laser Diodes 850nm PFA Series 3 Pulsed
PerkinElmer Optoelectronics
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FND-100Q FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q ISO-9001 TSI16949 CAT0506P

NX6311EH

Abstract: NX6311EH-AZ INFORMATION ON THIS PRODUCT DANGER SEMICONDUCTOR LASER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT Warning Laser Beam , : Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products , LASER DIODE NX6311EH 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 4 Gb/s FIBER CHANNEL , Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION · 4 G fiber channel FEATURES ·
California Eastern Laboratories
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PL10631EJ02V0DS
Abstract: Sheet PL10661EJ01V0DS 7 NX7363JB-BC SAFETY INFORMATION ON THIS PRODUCT SEMICONDUCTOR LASER DANGER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS , LASER DIODE NX7363JB-BC InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION DESCRIPTION The NX7363JB-BC is a 1 310 nm Multiple Quantum Well (MQW) structure pulsed laser diode DIP module , measurement equipment (OTDR). FEATURES · High output power · Long wavelength Pf = 150 mW MIN. @ IFP = 1 NEC
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SM-9/125 UL1581

etalon locker

Abstract: Semiconductor laser Types Fixed wavelength maintains the laser submount temperature constant over life and then controls the laser wavelength by , EXPOSURE TO BEAM MAX POWER +13dBm WAVELENGTH > 1525 nm CLASS IIIb LASER PRODUCT THIS PRODUCT COMPLIES WITH , Dec 2004 - Issue C 10Gb/s Compact InP MZ Modulator with DWDM Laser LMC10NEG Negative Chirp - , (MQW) DFB laser chip and negative chirp InP MZ modulator, has been specifically designed for use in 10 Gb/s high performance regional metro and long haul DWDM systems. By copackaging the laser, locker
Bookham Technology
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etalon locker Semiconductor laser Types Fixed wavelength AN0136 etalon wavelength locker bookham laser high speed VOA LMC10 EVLMC10NEG TL9000 ISO9001 FM15040 ISO14001
Abstract: Sheet PL10662EJ01V0DS 7 NX7563JB-BC SAFETY INFORMATION ON THIS PRODUCT SEMICONDUCTOR LASER DANGER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS , LASER DIODE NX7563JB-BC InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION DESCRIPTION The NX7563JB-BC is a 1 550 nm Multiple Quantum Well (MQW) structure pulsed laser diode DIP module , measurement equipment (OTDR). FEATURES · High output power · Long wavelength Pf = 135 mW MIN. @ IFP = 1 NEC
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Abstract: LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT SEMICONDUCTOR LASER AVOID EXPOSURE-Invisible Laser Radiation is emitted from this aperture Warning , semiconductor and laser products detailed below are compliant with the requirements of European Union (EU , LASER DIODE NX6308GH 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION , ) laser diode with InGaAs monitor PIN-PD. APPLICATION · 1.25 Gb/s FTTH PON (Fiber To The Home Passive NEC
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PL10692EJ01V0DS NX6308GH-AZ
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