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LTC1346ACSW#TR Linear Technology LTC1346A - 10Mbps DCE/DTE V.35 Transceiver; Package: SO; Pins: 24; Temperature Range: 0°C to 70°C
LTC1346ACSW Linear Technology LTC1346A - 10Mbps DCE/DTE V.35 Transceiver; Package: SO; Pins: 24; Temperature Range: 0°C to 70°C
LTC1346ACSW#TRPBF Linear Technology LTC1346A - 10Mbps DCE/DTE V.35 Transceiver; Package: SO; Pins: 24; Temperature Range: 0°C to 70°C
LTC1346ACSW#PBF Linear Technology LTC1346A - 10Mbps DCE/DTE V.35 Transceiver; Package: SO; Pins: 24; Temperature Range: 0°C to 70°C
ISL267440IUZ Intersil Corporation 10-Bit 1MSPS SAR ADCs; MSOP8, SOT8; Temp Range: -40° to 85°C
ISL89162FRTAZ Intersil Corporation High Speed, Dual Channel, 6A, 4.5 to 16VOUT, Power MOSFET Driver; DFN8, SOIC8; Temp Range: -40° to 125°C

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Semiconductor 1346 transistor

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: HF150-50S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF150-50S is a 50 V epitaxial transistor designed for SSB communications. The device utilizes emitter ballastiong for ruggedness. PACKAGE STYLE .500 4L STUD (A) .112 x 45° FEATURES: A Ø .630 NOM C â'¢ PG = 14 dB min. at , .185 / 4.70 .198 / 5.03 TJ -65 °C to +200 °C H .497 / 12.62 .530 / 13.46 TSTG , change without notice. REV. B 1/1 Advanced Semiconductor Advanced Semiconductor
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ASI10613
Abstract: HF150-50S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF150-50S is a 50 V epitaxial transistor designed for SSB communications. The device utilizes emitter ballastiong for ruggedness. PACKAGE STYLE .500 4L STUD (A) .112 x 45° FEATURES: A Ø .630 NOM C · PG = 14 dB min. at 150 , / 5.03 TJ -65 °C to +200 °C H .497 / 12.62 .530 / 13.46 TSTG -65 °C to +150 °C JC , Advanced Semiconductor Advanced Semiconductor
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transistor 1346 2108 npn transistor 1346 transistor datasheet of ic 555 transistor 495
Abstract: TVV030A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 4L STUD(A) The ASI TVV030A is Designed for .112 x 45° FEATURES: A Ø .630 NOM C · · · OmnigoldTM Metalization System B C E E B D E G MAXIMUM RATINGS 1/4-28 UNF-2A IC 16 A , SYMBOL .185 / 4.70 .198 / 5.03 H CHARACTERISTICS G .497 / 12.62 .530 / 13.46 , change without notice. REV. A 1/1 Advanced Semiconductor Advanced Semiconductor
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ASI10661 IC 555
Abstract: TVV030A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV030A is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 4L STUD(A) .112 x 45° FEATURES: A Ø .630 NOM C â'¢ Common Emitter â'¢ PG = 7.5 dB at 30 W/225 MHz â'¢ Omnigoldâ , H O .497 / 12.62 .530 / 13.46 ORDER CODE: ASI10661 O TC = 25 C NONETEST , 150 f = 1.0 MHz 120 pF dB dBC REV. A 1/1 Advanced Semiconductor Advanced Semiconductor
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Abstract: HF150-50S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 4L STUD (A) The ASI HF150-50S is Designed for .112 x 45° FEATURES: A Ø .630 NOM C · PG = 14 dB min. at 150 W/30 MHz · IMD3 = 100 dBc max. at 150 W (PEP) · OmnigoldTM Metalization System B C E E , .198 / 5.03 H .497 / 12.62 .530 / 13.46 ORDER CODE: ASI10613 TC = 25 OC NONETEST , Specifications are subject to change without notice. Advanced Semiconductor Advanced Semiconductor
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code 50s
Abstract: BLX14 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLX14 is Designed for HF and VHF band applications. PACKAGE STYLE .500 4L STUD (A) .112 x 45° FEATURES: A Ø .630 NOM C · PG = 13 dB min. at 15 W/1.6 MHz · d3 = -40 dB typ. at 15 W (PEP) · OmnigoldTM Metalization , .497 / 12.62 .530 / 13.46 1.99 °C/W CHARACTERISTICS TC = 25 °C NONETEST CONDITIONS , 125 pF dB dB REV. A 1/1 Advanced Semiconductor Advanced Semiconductor
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Abstract: SIEMENS NPN Silicon RF Transistor · For high gain low noise amplifiers · For oscillators up to 10 , Transistor 25 GHz f j - Line SI EG ET®25 BFP 420 ESD: Electrostatic discharge sensitive device , point to the pcb Semiconductor Group 1 1998-11-01 SIEMENS Electrical Characteristics at TA = 25 , mA, VCE = 2 V, f = 1.8 GHz, z S = z SoDt > z L= z Lopt 12 1) ^ms - 1^21 / S12 I Semiconductor , 133.3 109.1 82.5 72.6 67 36.88 35.4 22.87 13.46 6.93 4.59 3.339 2.15 1.46 1.2 1 178.1 164.4 120.8 -
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DIODE bfp 86 marking 53 Sot-343 Q62702-F1591 EHA07307
Abstract: ON Semiconductort One Watt High Voltage Transistor PNP Silicon MAXIMUM RATINGS Rating , MPSW92 ON Semiconductor Preferred Device 1 2 3 CASE 29-10, STYLE 1 TO-92 (TO , -0.1 Vdc Vdc Vdc uAdc uAdc Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 1344 November, 2001 - , = 10 V VBE(on) @ -55°C, VCE = 10 V Figure 4. "ON" Voltages http://onsemi.com 1346 ON ON Semiconductor
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Abstract: SIEMENS SI EGET® 25 BFP 420 NPN Silicon RF Transistor â'¢ For high gain low noise , '¢ SIEGET ® 25 - Line Siemens Grounded Emitter Transistor 25 GHz f j - Line ESD: Electrostatic , measured on the collector lead at the soldering point to the pcb Semiconductor Group 1575 â , Semiconductor Group 1576 623SbOS 0 1 2 1 ^ 4 Q^l 1998-11-01 SIEMENS BFP 420 Common Emitter , 176.2 152.8 133.3 109.1 82.5 72.6 67 36.88 35.4 22.87 13.46 6.93 4.59 3.339 2.15 1.46 -
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TEA 1091 IS21I2 235LG5 01EEQQ0
Abstract: TVV030A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV030A is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 4L STUD(A) .112 x 45° FEATURES: A Ø .630 NOM C · Common Emitter · PG = 7.5 dB at 30 W/225 MHz · OmnigoldTM Metalization , CHARACTERISTICS G .198 / 5.03 .497 / 12.62 .530 / 13.46 ORDER CODE: ASI10661 TC = 25 °C , ) 765-3004 Specifications are subject to change without notice. REV. B 1/2 Advanced Semiconductor Advanced Semiconductor
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Abstract: SENSITRON SEMICONDUCTOR SHD501355 SHD501355A TECHNICAL DATA DATA SHEET 4054, REV. - LOW , TEMPERATURE RANGE C/W 0 C 0 C CONTROL SECTION -40 POWER TRANSISTOR SECTION -40 - , ) .835 (21.21 .815 20.70) .707 (17.96 .697 17.70) .550 (13.97 .530 13.46) 1 2 3 4 5 .045 , contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In , semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other Sensitron Semiconductor
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LT1764A transistor 835 MO-078
Abstract: on the emitter (GND) lead at the soldering point to the pcb Semiconductor Group 1837 â I , minimize the parasitic inductance to ground! Semiconductor Group 1838 fl535b05 O lS E S S fi =04 , 0.4477 174.8 166.9 147.3 140.2 139.4 138.1 139.6 139.3 138.8 138.3 134.6 131 S i2 S 22 Spice-model BGA 427 Semiconductor Group 1839 ÛS3SLDS 0122E2T Ã7D 1998-11-01 SIEMENS BGA 427 Transistor Chip Data T1 (Berkley-SPICE 2G.6 Syntax) : IS = 0.21024 aA BF = -
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Q62702-G0067 53SLDS D15SS30 D15S231
Abstract: : Semiconductor Group 1346 02.97 , SIEMENS NPN Silicon RF Transistor · For low-power amplifiers in mobile communication systems , pcb. Semiconductor Group 1343 02.97 SIEMENS Electrical Characteristics at TA = 25 , V ma 100 nA 100 ma 1 " Semiconductor Group 1344 02.97 SIEMENS Electrical , Values typ. max. Unit GHz pF dB 1) ß ms= IS2i/S,2l Semiconductor Group 1345 02.97 -
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FR180 BFR180 900MH Q62702-F1296
Abstract: Semiconductor Group 3 1998-11-01 SIEMENS Transistor Chip Data T1 (Berkley-SPICE 2G.6 Syntax) : IS = , soldering point to the pcb Semiconductor Group 1 1998-11-01 SIEMENS Electrical Characteristics at 7A = , boards are recommended to minimize the parasitic inductance to ground! Semiconductor Group 2 1998-11-01 , 147.3 140.2 139.4 138.1 139.6 139.3 138.8 138.3 134.6 131 Spice-model BGA 427 T1 12 T501 T501 14.5kQ , : http://www.siemens.de/Semiconductor Group 4 1998-11-01 SIEMENS -
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transistor marking BMs BGA427 BMS 13-81 siemens rs 806 siemens transistor EHA07382
Abstract: Parameter 80 Semiconductor Group 100 1346 ÃE351.05 GlE17b4 5^5 120 140 mA 170 , SIEMENS BFG135A NPN Silicon RF Transistor â'¢ For low-distortion broadband output , ) Ts is measured on the collector lead at the soldering point to the pcb. Semiconductor Group , ^EB = 1 V, /q = 0 DC current gain Semiconductor Group ~ hFE 80 /c = 100 mA, VCE = 8 V , ) Semiconductor Group 1344 Û E 3 S L 0 S 1 998-11-01 0 1 3 1 7 fc i2 7 1 T â  SIEMENS -
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Q62702-F1322 D1517L D1217
Abstract: Excelics' unique MESFET transistor technology. Caution! ESD sensitive device. ELECTRICAL , . Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale , . Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax , 0.4755 0.4083 0.3168 0.261 0.2876 0.3632 0.4355 134.6 105.78 78.66 51.55 22.06 -11.96 , .] (dBm) Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Excelics Semiconductor
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EIC7177-10 TRANSISTOR 4847 06761
Abstract: SIEGET® 25 BFP 420 NPN Silicon RF Transistor 3 · For high gain low noise amplifiers , SIEGET ® 25 - Line 1 VPS05605 Siemens Grounded Emitter Transistor 25 GHz f T - Line ESD , measured on the collector lead at the soldering point to the pcb Semiconductor Group Semiconductor Group , GHz, ZS=ZSopt , ZL=ZLopt |S21|2 GHz pF dB 1) Gms = |S21 / S12| Semiconductor Group Semiconductor Group 22 Jul-14-1998 1998-11-01 BFP 420 Common Emitter S-Parameters f GHz S11 Siemens
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420 NPN Silicon RF Transistor transistor fc 1013 TP66 RNF50 BFP420 BFP 86
Abstract: Transistor, 175MHz520MHz,15W DESCRIPTION RD15HVF1 is a MOS FET type transistor specifically designed for , MOSFET Power Transistor, 175MHz520MHz,15W ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED , MOSFET Power Transistor, 175MHz520MHz,15W TYPICAL CHARACTERISTICS CHANNNEL DISSIPATION VS. AMBIENT , ) > RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W TYPICAL CHARACTERISTICS , ) > RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W TYPICAL CHARACTERISTICS Mitsubishi
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rd15hvf RF Transistor s-parameter 30W transistor d 1302 175MH 520MH RD15HVF1-101
Abstract: Transistor, 175MHz520MHz,15W DESCRIPTION OUTLINE RD15HVF1 is a MOS FET type transistor specifically , ) > RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W ABSOLUTE MAXIMUM RATINGS , ) > RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W TYPICAL CHARACTERISTICS , Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W TYPICAL CHARACTERISTICS Pin-Po , Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W TYPICAL CHARACTERISTICS Vgs-Ids Mitsubishi
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Abstract: PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE DESCRIPTION RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica , PRECAUTIONS RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W ABSOLUTE , , Silicon MOSFET Power Transistor, 175MHz520MHz,15W TYPICAL CHARACTERISTICS CHANNNEL DISSIPATION VS , RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz Mitsubishi
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100OHM RF Transistor s-parameter vhf transistor D 1557
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