NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: SIEGET® 25 BFP 420 NPN Silicon RF Transistor 3 · For high gain low noise amplifiers , SIEGET ® 25 - Line 1 VPS05605 VPS05605 Siemens Grounded Emitter Transistor 25 GHz f T - Line ESD , measured on the collector lead at the soldering point to the pcb Semiconductor Group Semiconductor Group , GHz, ZS=ZSopt , ZL=ZLopt |S21|2 GHz pF dB 1) Gms = |S21 / S12| Semiconductor Group Semiconductor Group 22 Jul-14-1998 1998-11-01 BFP 420 Common Emitter S-Parameters f GHz S11 ... | Original |
8 pages, |
zs transistor VPS05605 transistor fc 1013 Q62702-F1591 420 NPN Silicon RF Transistor transistor 1346 datasheet abstract |
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| Abstract: the pcb Semiconductor Group Semiconductor Group 11 Au 1998-11-01 -11-1998 BGA 427 , pc-board-applications. Thin boards are recommended to minimize the parasitic inductance to ground! Semiconductor Group Semiconductor Group 22 Au 1998-11-01 -11-1998 BGA 427 S-Parameters at TA = 25 °C, (Testfixture , 139.3 138.8 138.3 134.6 131 Spice-model BGA 427 +V BGA 427-chip including parasitics 13 , C P2 12 GND Semiconductor Group Semiconductor Group EHA07381 EHA07381 33 OUT T1 T2 R1 R2 ... | Original |
5 pages, |
transistor K 1352 Q62702-G0067 T 427 transistor datasheet abstract |
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| Abstract: SENSITRON SEMICONDUCTOR SHD501355 SHD501355 SHD501355A SHD501355A TECHNICAL DATA DATA SHEET 4054, REV. - LOW , TEMPERATURE RANGE C/W 0 C 0 C CONTROL SECTION -40 POWER TRANSISTOR SECTION -40 - , ) .835 (21.21 .815 20.70) .707 (17.96 .697 17.70) .550 (13.97 .530 13.46) 1 2 3 4 5 .045 , to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). , ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe ... | Original |
3 pages, |
SHD501355A SHD501355 LT1764A SHD501355 abstract |
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| Abstract: Freescale Semiconductor Technical Data Document Number: MRF282 MRF282 Rev. 15, 5/2006 RF Power Field , should be observed. © Freescale Semiconductor, Inc., 2006, 2008. All rights reserved. MRF282SR1 MRF282SR1 MRF282ZR1 MRF282ZR1 1 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION Table 3. Electrical , 9.5 35 11.5 40 - - dB % MRF282SR1 MRF282SR1 MRF282ZR1 MRF282ZR1 2 RF Device Data Freescale Semiconductor , Teflon® MRF282SR1 MRF282SR1 MRF282ZR1 MRF282ZR1 RF Device Data Freescale Semiconductor 3 ARCHIVE INFORMATION Z1 Z2 ... | Original |
13 pages, |
MRF282 MRF282 abstract |
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| Abstract: Freescale Semiconductor Technical Data Document Number: MRF282 MRF282 Rev. 15, 5/2006 RF Power , packaging MOS devices should be observed. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MRF282SR1 MRF282SR1 MRF282ZR1 MRF282ZR1 1 Table 3. Electrical , 2 RF Device Data Freescale Semiconductor R2 R5 R3 R4 VGG + C3 RF INPUT B1 , ® MRF282SR1 MRF282SR1 MRF282ZR1 MRF282ZR1 RF Device Data Freescale Semiconductor 3 R1 C5 C4 R2 C18 C13 C7 ... | Original |
12 pages, |
100b*500x MRF282ZR1 MRF282SR1 MRF282 MJD320 100B270JCA500X 200S CDR33BX104AKWS ferroxcube for ferrite beads MALLORY VARIABLE CAPACITORS Semiconductor 1346 transistor C18 ph MRF282 abstract |
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| Abstract: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRF282/D MRF282/D SEMICONDUCTOR , Freescale Semiconductor, Inc. NChannel EnhancementMode Lateral MOSFETs Designed for Class A and , MRF282SR1 MRF282SR1 MRF282ZR1 MRF282ZR1 1 Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS continued (TC = 25°C , CHARACTERISTICS Freescale Semiconductor, Inc. DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola , For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. R2 ... | Original |
12 pages, |
MRF282ZR1 MRF282SR1 GX0300-55-22 CDR33BX104AKWS 200S GX03005522 MRF282/D MRF282/D abstract |
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| Abstract: PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE 3.2+/-0.4 2 9+ , /-0.2 4.8MAX FEATURES DRAWING 9.1+/-0.7 12.3+/-0.6 RD15HVF1 RD15HVF1 is a MOS FET type transistor , HANDLING PRECAUTIONS RD15HVF1 RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W , RD15HVF1 RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz , HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W TYPICAL ... | Original |
10 pages, |
Zo-50o RD15HV 100OHM rd15hvf RD15HVF1-101 RD15HVF1 RD15HVF1 abstract |
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| Abstract: PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE DESCRIPTION RD15HVF1 RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica , HANDLING PRECAUTIONS RD15HVF1 RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W , HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W TYPICAL , , Silicon MOSFET Power Transistor, 175MHz520MHz,15W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS 100 ... | Original |
10 pages, |
RF Transistor s-parameter vhf 100OHM RD15HVF1-101 RD15HVF1 RD15HVF1 abstract |
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| Abstract: PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE 3.2�4 3.6�2 , transistor specifically designed for VHF/UHF High power amplifiers applica -tions. 12.3MIN , HANDLING PRECAUTIONS RD15HVF1 RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W , RD15HVF1 RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz , RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W TYPICAL CHARACTERISTICS Pin-Po ... | Original |
9 pages, |
Transistor Marking C3 transistor d1 391 transistor D 1557 100OHM transistor marking zg tc 1601 a D 1413 transistor RD15HVF1 RD15HVF1-101 RD15HVF1 abstract |
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| Abstract: PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE 3.2+/-0.4 2 9+ , /-0.2 4.8MAX FEATURES DRAWING 9.1+/-0.7 12.3+/-0.6 RD15HVF1 RD15HVF1 is a MOS FET type transistor , HANDLING PRECAUTIONS RD15HVF1 RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W , RD15HVF1 RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz , PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W TYPICAL CHARACTERISTICS ... | Original |
9 pages, |
micro strip line 100OHM MITSUBISHI RF POWER MOS FET D 1413 transistor RD15HVF1-101 RD15HVF1 MAR 703 MOSFET TRANSISTOR RD15HVF1 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| Infineon Technologies AG - Products - RF Bipolar Transistors PNP Wired Communica Wireless Commun AF Diodes AF Transistors RF Diodes RF Transistors RF Transistors SMD packages SOT23 and SOT323 RF Bipolar Transistors PNP BFG 194 PNP Silicon RF transistor for low www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/pro~1755.htm |
Infineon | 26/10/2000 | 25.67 Kb | HTM | pro~1755.htm |
| N-Channel SIPMOS Power Transistors BUZ 77A N-Channel SIPMOS Power Transistor BUZ 77B N-Channel SIPMOS Power Transistor BUZ 90 N-Channel SIPMOS Power Transistor BUZ 90A N-Channel SIPMOS Power Transistor www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/pro~1768.htm |
Infineon | 26/10/2000 | 28.11 Kb | HTM | pro~1768.htm |
| ! SIEMENS Small Signal Semiconductors ! BFR193W BFR193W BFR193W BFR193W ! Si NPN RF Bipolar Junction Transistor in SOT323 ! VCE = 8 V IC = 7 mA ! Common Emitter S-Parameters: September 1992 # GHz .8528 -26.9 0.150 0.7049 -73.1 15.262 134.6 0.0456 57.3 0.7464 -35.7 0.200 0.6592 -89.7 13 .6246 110.8 0.962 16.8 0.4170 50.2 0.3526 -134.6 5.000 0.6448 104.4 0.898 12.0 0.4664 45 .00 0.55 -156 0.13 ! ! SIEMENS AG Semiconductor Group, Munich www.datasheetarchive.com/download/60935193-777344ZC/bfr193w.zip (W68V07M0.S2P) |
Spice Models | 29/07/2012 | 59.74 Kb | ZIP | bfr193w.zip |
| ! SIEMENS Small Signal Semiconductors ! BFS17P BFS17P BFS17P BFS17P ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 2.5 V IC = 2 mA ! Common Emitter S-Parameters: January 1996 .336 134.6 0.0641 57.8 0.8585 -19.0 0.250 0.7083 -75.1 4.878 126.4 0.0730 52.9 0.8149 -21 .425 55.8 0.1281 50.6 0.5820 -42.0 1.400 0.4783 165.2 1.346 52.6 0.1350 52.5 0.5790 -44 .709 15.1 0.3331 56.8 0.5404 -96.2 ! ! SIEMENS AG Semiconductor Group, Munich www.datasheetarchive.com/download/29804504-777355ZC/bfs17p.zip (RM2V52M0.S2P) |
Spice Models | 29/07/2012 | 355.62 Kb | ZIP | bfs17p.zip |
| ! Infineon Technologies Discrete & RF Semiconductors ! BF771W BF771W BF771W BF771W ! Si NPN RF Bipolar Junction Transistor in SOT323 ! VCE = 8 V IC = 7 mA ! Common Emitter S-Parameters: September 1992 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz .0347 65.0 0.8528 -26.9 0.150 0.7049 -73.1 15.262 134.6 0.0456 57.3 0.7464 -35.7 0.200 0 .2 0.3526 -134.6 5.000 0.6448 104.4 0.898 12.0 0.4664 45.9 0.3681 -146.1 5.500 0 www.datasheetarchive.com/download/86945235-777291ZC/bf771w.zip (G38V07M0.S2P) |
Spice Models | 29/07/2012 | 58.72 Kb | ZIP | bf771w.zip |
| ! Infineon Technologies Discrete & RF Semiconductors ! BF517 BF517 BF517 BF517 ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 2.5 V IC = 2 mA ! Common Emitter S-Parameters: January 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz .7599 -62.6 5.336 134.6 0.0641 57.8 0.8585 -19.0 0.250 0.7083 -75.1 4.878 126.4 0.0730 52 .4699 170.5 1.425 55.8 0.1281 50.6 0.5820 -42.0 1.400 0.4783 165.2 1.346 52.6 0.1350 52 www.datasheetarchive.com/download/57679045-777287ZC/bf517.zip (GB2V52M0.S2P) |
Spice Models | 29/07/2012 | 357.65 Kb | ZIP | bf517.zip |
| ! SIEMENS Small Signal Semiconductors ! BFP182 BFP182 BFP182 BFP182 ! Si NPN RF Bipolar Junction Transistor in SOT143 ! VCE = 2.5 V IC = 0.8 mA ! Common Emitter S-Parameters: March 1996 .415 -30.1 0.1346 14.8 0.7143 -141.0 ! ! SIEMENS AG Semiconductor Group, Munich .4 1.200 0.7135 -111.8 2.003 97.9 0.1346 25.5 0.8104 -35.6 1.300 0.6976 -119.8 1 .3 1.500 0.6665 -134.6 1.760 83.1 0.1403 16.2 0.7667 -41.0 1.600 0.6545 -141.5 1 www.datasheetarchive.com/download/11184830-777306ZC/bfp182.zip (P42V5M80.S2P) |
Spice Models | 29/07/2012 | 370.73 Kb | ZIP | bfp182.zip |
| ! SIEMENS Small Signal Semiconductors ! BFP182 BFP182 BFP182 BFP182 ! Si NPN RF Bipolar Junction Transistor in SOT143 ! VCE = 2.5 V IC = 1 mA ! Common Emitter S-Parameters: February 1991 .7438 -41.5 1.600 0.6863 -137.1 1.984 83.1 0.1346 15.9 0.7327 -43.1 1.800 0.6763 -148.7 1.831 75.5 0.1346 11.6 0.7126 -46.1 2.000 0.6626 -159.5 1.688 68.3 0.1330 7.8 0.6983 -49 .6 0.549 -21.1 0.1196 20.6 0.7250 -124.4 ! ! SIEMENS AG Semiconductor Group, Munich www.datasheetarchive.com/files/siemens/ehdata/spar/bfp182/p42v51m0-v1.s2p |
Siemens | 08/08/1994 | 2.22 Kb | S2P | p42v51m0-v1.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFR193W BFR193W BFR193W BFR193W ! Si NPN RF Bipolar Junction Transistor in SOT323 ! VCE = 8 V IC = 7 mA ! Common Emitter S-Parameters: September 1992 # GHz .8528 -26.9 0.150 0.7049 -73.1 15.262 134.6 0.0456 57.3 0.7464 -35.7 0.200 0.6592 -89.7 13 .6246 110.8 0.962 16.8 0.4170 50.2 0.3526 -134.6 5.000 0.6448 104.4 0.898 12.0 0.4664 45 .6 0.793 4.7 0.5587 36.2 0.3940 -164.6 ! ! SIEMENS AG Semiconductor Group, Munich www.datasheetarchive.com/files/siemens/ehdata/spar/bfr193w/w68v07m0-v1.s2p |
Siemens | 09/08/1994 | 2.22 Kb | S2P | w68v07m0-v1.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFR92W BFR92W BFR92W BFR92W ! Si NPN RF Bipolar Junction Transistor in SOT323 ! VCE = 10 V IC = 3 mA ! Common Emitter S-Parameters: September 1992 .3 0.300 0.7213 -60.1 7.358 134.6 0.0609 60.2 0.8259 -23.9 0.400 0.6436 -75.5 6.480 123 .4461 -127.3 3.692 92.4 0.1006 47.6 0.5676 -35.1 1.000 0.4373 -134.6 3.394 88.2 0.1047 47 .8 0.736 2.2 0.4873 45.8 0.5268 -120.2 ! ! SIEMENS AG Semiconductor Group, Munich www.datasheetarchive.com/files/siemens/ehdata/spar/bfr92w/w010v3m0-v1.s2p |
Siemens | 10/08/1994 | 2.22 Kb | S2P | w010v3m0-v1.s2p |