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Semiconductor 1346 transistor

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: HF150-50S HF150-50S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF150-50S HF150-50S is a 50 V epitaxial transistor designed for SSB communications. The device utilizes emitter ballastiong for ruggedness. PACKAGE STYLE .500 4L STUD (A) .112 x 45° FEATURES: A Ø .630 NOM C • PG = 14 dB min. at , .185 / 4.70 .198 / 5.03 TJ -65 °C to +200 °C H .497 / 12.62 .530 / 13.46 TSTG , change without notice. REV. B 1/1 Advanced Semiconductor ... Advanced Semiconductor
Original
datasheet

1 pages,
13.12 Kb

HF150-50S TEXT
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Abstract: HF150-50S HF150-50S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF150-50S HF150-50S is a 50 V epitaxial transistor designed for SSB communications. The device utilizes emitter ballastiong for ruggedness. PACKAGE STYLE .500 4L STUD (A) .112 x 45° FEATURES: A Ø .630 NOM C · PG = 14 dB min. at 150 , / 5.03 TJ -65 °C to +200 °C H .497 / 12.62 .530 / 13.46 TSTG -65 °C to +150 °C JC , Advanced Semiconductor ... Advanced Semiconductor
Original
datasheet

1 pages,
13.41 Kb

transistor 495 HF150-50S datasheet of ic 555 ASI10613 1346 transistor 2108 npn transistor transistor 1346 TEXT
datasheet frame
Abstract: TVV030A TVV030A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 4L STUD(A) The ASI TVV030A TVV030A is Designed for .112 x 45° FEATURES: A Ø .630 NOM C · · · OmnigoldTM Metalization System B C E E B D E G MAXIMUM RATINGS 1/4-28 UNF-2A IC 16 A , SYMBOL .185 / 4.70 .198 / 5.03 H CHARACTERISTICS G .497 / 12.62 .530 / 13.46 , change without notice. REV. A 1/1 Advanced Semiconductor ... Advanced Semiconductor
Original
datasheet

1 pages,
15.75 Kb

TVV030A ASI10661 datasheet of ic 555 IC 555 TEXT
datasheet frame
Abstract: TVV030A TVV030A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV030A TVV030A is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 4L STUD(A) .112 x 45° FEATURES: A Ø .630 NOM C • Common Emitter • PG = 7.5 dB at 30 W/225 MHz • Omnigoldâ , H O .497 / 12.62 .530 / 13.46 ORDER CODE: ASI10661 ASI10661 O TC = 25 C NONETEST , 150 f = 1.0 MHz 120 pF dB dBC REV. A 1/1 Advanced Semiconductor ... Advanced Semiconductor
Original
datasheet

1 pages,
12.84 Kb

TVV030A TEXT
datasheet frame
Abstract: HF150-50S HF150-50S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 4L STUD (A) The ASI HF150-50S HF150-50S is Designed for .112 x 45° FEATURES: A Ø .630 NOM C · PG = 14 dB min. at 150 W/30 MHz · IMD3 = 100 dBc max. at 150 W (PEP) · OmnigoldTM Metalization System B C E E , .198 / 5.03 H .497 / 12.62 .530 / 13.46 ORDER CODE: ASI10613 ASI10613 TC = 25 OC NONETEST , Specifications are subject to change without notice. Advanced Semiconductor ... Advanced Semiconductor
Original
datasheet

1 pages,
15.51 Kb

HF150-50S datasheet of ic 555 code 50s ASI10613 TEXT
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Abstract: BLX14 BLX14 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLX14 BLX14 is Designed for HF and VHF band applications. PACKAGE STYLE .500 4L STUD (A) .112 x 45° FEATURES: A Ø .630 NOM C · PG = 13 dB min. at 15 W/1.6 MHz · d3 = -40 dB typ. at 15 W (PEP) · OmnigoldTM Metalization , .497 / 12.62 .530 / 13.46 1.99 °C/W CHARACTERISTICS TC = 25 °C NONETEST CONDITIONS , 125 pF dB dB REV. A 1/1 Advanced Semiconductor ... Advanced Semiconductor
Original
datasheet

1 pages,
13.11 Kb

datasheet of ic 555 BLX14 TEXT
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Abstract: SIEMENS NPN Silicon RF Transistor · For high gain low noise amplifiers · For oscillators up to 10 , Transistor 25 GHz f j - Line SI EG ET®25 BFP 420 ESD: Electrostatic discharge sensitive device , point to the pcb Semiconductor Group 1 1998-11-01 SIEMENS Electrical Characteristics at TA = 25 , mA, VCE = 2 V, f = 1.8 GHz, z S = z SoDt > z L= z Lopt 12 1) ^ms - 1^21 / S12 I Semiconductor , 133.3 109.1 82.5 72.6 67 36.88 35.4 22.87 13.46 6.93 4.59 3.339 2.15 1.46 1.2 1 178.1 164.4 120.8 ... OCR Scan
datasheet

8 pages,
269.95 Kb

marking 53 Sot-343 DIODE bfp 86 Semiconductor 1346 transistor TEXT
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Abstract: ON Semiconductort One Watt High Voltage Transistor PNP Silicon MAXIMUM RATINGS Rating , MPSW92 MPSW92 ON Semiconductor Preferred Device 1 2 3 CASE 29-10, STYLE 1 TO-92 (TO , -0.1 Vdc Vdc Vdc uAdc uAdc Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 1344 November, 2001 - , = 10 V VBE(on) @ -55°C, VCE = 10 V Figure 4. "ON" Voltages http://onsemi.com 1346 ON ... ON Semiconductor
Original
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3 pages,
101.76 Kb

Semiconductor 1346 transistor TEXT
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Abstract: SIEMENS SI EGET® 25 BFP 420 NPN Silicon RF Transistor • For high gain low noise , €¢ SIEGET ® 25 - Line Siemens Grounded Emitter Transistor 25 GHz f j - Line ESD: Electrostatic , measured on the collector lead at the soldering point to the pcb Semiconductor Group 1575 â , Semiconductor Group 1576 623SbOS 0 1 2 1 ^ 4 Q^l 1998-11-01 SIEMENS BFP 420 Common Emitter , 176.2 152.8 133.3 109.1 82.5 72.6 67 36.88 35.4 22.87 13.46 6.93 4.59 3.339 2.15 1.46 ... OCR Scan
datasheet

8 pages,
156.71 Kb

TEA 1091 TEXT
datasheet frame
Abstract: TVV030A TVV030A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV030A TVV030A is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 4L STUD(A) .112 x 45° FEATURES: A Ø .630 NOM C · Common Emitter · PG = 7.5 dB at 30 W/225 MHz · OmnigoldTM Metalization , CHARACTERISTICS G .198 / 5.03 .497 / 12.62 .530 / 13.46 ORDER CODE: ASI10661 ASI10661 TC = 25 °C , ) 765-3004 Specifications are subject to change without notice. REV. B 1/2 Advanced Semiconductor ... Advanced Semiconductor
Original
datasheet

2 pages,
22.09 Kb

TVV030A IC 555 ASI10661 TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
! SIEMENS Small Signal Semiconductors ! BFR92W BFR92W ! Si NPN RF Bipolar Junction Transistor in SOT323 ! VCE = 10 V IC = 3 mA ! Common Emitter S-Parameters 0.8628 -21.3 0.300 0.7213 -60.1 7.358 134.6 0.0609 60.2 0.8259 -23.9 0.400 0.6436 -75.5 0.900 0.4461 -127.3 3.692 92.4 0.1006 47.6 0.5676 -35.1 1.000 0.4373 -134.6 3.394 88.2 0.5564 92.8 0.736 2.2 0.4873 45.8 0.5268 -120.2 ! ! SIEMENS AG Semiconductor Group, Munich
/datasheets/files/siemens/ehdata/spar/bfr92w/w010v3m0-v1.s2p
Siemens 10/08/1994 2.22 Kb S2P w010v3m0-v1.s2p
! SIEMENS Small Signal Semiconductors ! BF569 BF569 ! Si PNP RF Bipolar Junction Transistor in SOT23 ! VCE = -20 V IC = -1.5 mA ! Common Emitter S-Parameters 0.600 0.4750 -134.6 1.809 87.1 0.0348 49.8 0.9063 -9.5 0.700 0.4611 -145.4 1.585 80.5 2.000 0.5416 141.4 0.573 26.6 0.0771 87.2 0.9011 -27.2 2.200 0.5615 134.6 0.514 20.2 AG Semiconductor Group, Munich
/datasheets/files/infineon/ehdata/spar/bf569/rx20v1m5.s2p
Infineon 03/08/1997 2.38 Kb S2P rx20v1m5.s2p
Bipolar Junction Transistor in SOT23 ! VCE = -1.75 V IC = -15 mA ! Common Emitter S-Parameters 146.5 1.346 46.0 0.2104 57.2 0.2739 -170.4 1.300 0.7027 143.4 1.257 42.5 0.2268 55.9 1.139 36.4 0.2590 53.4 0.3016 -176.5 1.600 0.7172 134.6 1.069 33.4 0.2741 52.0 0.3116 89.5 0.636 -0.4 0.4996 19.7 0.5513 134.6 4.000 0.7886 81.7 0.600 -4.5 0.5253 11.6 Semiconductor Group, Munich
/datasheets/files/infineon/ehdata/spar/bfr194/rg1v715m.s2p
Infineon 13/08/1996 2.78 Kb S2P rg1v715m.s2p
! SIEMENS Small Signal Semiconductors ! BFS17P BFS17P ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 2.5 V IC = 2 mA ! Common Emitter S-Parameters 5.336 134.6 0.0641 57.8 0.8585 -19.0 0.250 0.7083 -75.1 4.878 126.4 0.0730 52.9 0.8149 0.5820 -42.0 1.400 0.4783 165.2 1.346 52.6 0.1350 52.5 0.5790 -44.4 1.500 0.4836 160.1 AG Semiconductor Group, Munich
/datasheets/files/infineon/ehdata/spar/bfs17p/rm2v52m0.s2p
Infineon 30/07/1997 2.38 Kb S2P rm2v52m0.s2p
! SIEMENS Discrete & RF Semiconductors ! BFY180 BFY180 ! Si NPN RF Bipolar Junction Transistor in MICRO-X ! VCE = 4 V IC = 0.4 mA ! Common Emitter S-Parameters 0.600 0.9612 -18.0 1.370 155.9 0.0564 75.6 0.9879 -13.0 0.700 0.9565 -21.1 1.346 153.0 -35.2 1.302 134.6 0.1060 61.4 0.9594 -25.5 1.300 0.8903 -38.1 1.295 131.1 0.1132 59.2 Semiconductor Group, Munich
/datasheets/files/infineon/ehdata/spar/bfy180/xa4v0m40.s2p
Infineon 16/05/1997 2.78 Kb S2P xa4v0m40.s2p
! SIEMENS Small Signal Semiconductors ! BFP93A BFP93A ! Si NPN RF Bipolar Junction Transistor in SOT143 ! VCE = 1.5 V IC = 4 mA ! Common Emitter S-Parameters: August 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz 2.000 0.7142 140.6 1.346 36.5 0.1052 17.4 0.3354 -93.4 2.200 0.7269 134.6 1.216 30.6 Semiconductor Group, Munich
/datasheets/files/infineon/ehdata/spar/bfp93a/ph1v54m0.s2p
Infineon 14/08/1996 2.78 Kb S2P ph1v54m0.s2p
! SIEMENS Small Signal Semiconductors ! BFR193 BFR193 ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 3 V IC = 2 mA ! Common Emitter S-Parameters 0.600 0.6297 -134.6 3.060 94.9 0.1095 33.2 0.6118 -36.5 0.700 0.6125 -145.6 2.719 88.0 1.435 53.1 0.1245 50.9 0.5038 -56.5 1.600 0.6063 156.8 1.346 49.3 0.1321 53.8 0.4977 Semiconductor Group, Munich
/datasheets/files/infineon/ehdata/spar/bfr193/r63v02m0.s2p
Infineon 24/11/1997 2.78 Kb S2P r63v02m0.s2p
! SIEMENS Small Signal Semiconductors ! BFR193W BFR193W ! Si NPN RF Bipolar Junction Transistor in SOT323 ! VCE = 8 V IC = 7 mA ! Common Emitter S-Parameters 65.0 0.8528 -26.9 0.150 0.7049 -73.1 15.262 134.6 0.0456 57.3 0.7464 -35.7 0.200 0.6592 4.500 0.6246 110.8 0.962 16.8 0.4170 50.2 0.3526 -134.6 5.000 0.6448 104.4 0.898 12.0 2.00 0.55 -156 0.13 ! ! SIEMENS AG Semiconductor Group, Munich
/datasheets/files/infineon/ehdata/spar/bfr193w/w68v07m0.s2p
Infineon 16/11/1997 2.39 Kb S2P w68v07m0.s2p
! SIEMENS Small Signal Semiconductors ! BFR193W BFR193W ! Si NPN RF Bipolar Junction Transistor in SOT323 ! VCE = 8 V IC = 7 mA ! Common Emitter S-Parameters 65.0 0.8528 -26.9 0.150 0.7049 -73.1 15.262 134.6 0.0456 57.3 0.7464 -35.7 0.200 0.6592 4.500 0.6246 110.8 0.962 16.8 0.4170 50.2 0.3526 -134.6 5.000 0.6448 104.4 0.898 12.0 0.6476 90.6 0.793 4.7 0.5587 36.2 0.3940 -164.6 ! ! SIEMENS AG Semiconductor Group, Munich
/datasheets/files/siemens/ehdata/spar/bfr193w/w68v07m0-v1.s2p
Siemens 09/08/1994 2.22 Kb S2P w68v07m0-v1.s2p
! SIEMENS Small Signal Semiconductors ! BFP450 BFP450 ! Si NPN RF SIEGET Grounded Emitter Transistor in SOT343 ! VCE = 3 V IC = 5 mA ! Common Emitter S-Parameters -38.2 0.250 0.7691 -73.3 13.167 134.6 0.0545 52.4 0.8108 -45.8 0.300 0.7535 -84.5 12.207 1.219 18.1 0.1093 24.3 0.4305 172.5 3.800 0.7919 134.6 1.142 14.9 0.1138 24.3 0.4447 0.1755 14.6 0.5932 134.1 ! ! SIEMENS AG Semiconductor Group, Munich
/datasheets/files/siemens/ehdata/spar/bfp450/3p3v05m0.s2p
Siemens 09/08/1994 3.01 Kb S2P 3p3v05m0.s2p