2SJ44 2SK163 SC-43A J22686 TC-3344A

ELECTRON DEVICE P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR 2SJ44 DESCRIPTION The 2SJ44 is designed for use in driver stage of AF

ï»¿NEC ELECTRON DEVICE P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR 2SJ44 2SJ44 DESCRIPTION The 2SJ44 2SJ44 is designed for use in driver stage of AF low noise amplifier. FEATURES â�¢ Low Noise Figure en=1.5 nV/VHz TYP. (VDS=-10 V, lD=-1.0 mA, f=1.0 kHz) NV=S20mV â�¢ High Voltage, High IVfsI, and Wide Dynamic Range VGD0 ^40 V lYfs 1=9.0 mS TYP. (VDS=-10V, lD=-1.0 mA, f=1.0 kHz) â�¢ Complementary to NEC 2SK163 2SK163 ABSOLUTE MAXIMUM RATINGS Maximum Temperatures Storage Temperature. -55 to +125 Â°C Junction Temperature. + 125 Â°C Maximum Maximum Power Dissipation (Ta = 25 Â°C) Total Power Dissipation. 400 mW Maximum Voltages and Currents (Ta =25 Â°C) vGDO Gate to Drain Voltage.40 V Vqso Gate to Source Voltage.40 V Vdsx* Drain to Source Voltage .-40 V lo Drain Current.-30 mA lG Gate Current.-10 mA *VGS = -2.0 V PACKAGE DIMENSIONS in millimeters (inches) 5.2 MAX. (0.204 MAX.) 1. DRAIN 2. GATE 3. SOURCE El AJ JEDEC IEC SC-43A SC-43A TO-92 PA33 ELECTRICAL CHARACTERISTICS (Ta = 25 Â°C) SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNIT TEST CONDITIONS 'DSS Zero-Gate Voltage Drain Current -1.0 -9.0 -18 mA VDS=-10 V, VGS = 0 IVf.lt Forward Transfer Admittance 7.0 9.0 mS VDS = -10 V, Iq = -1.0 mA, f-1.0 kHz IVfsl, Forward Transfer Admittance 7.0 mS VDS = -10 V, VGS = 0, f = 1.0 kHz Ci ss Input Capacitance 50 PF VDS = -10 V, VGS = 0, f = 1.0 MHz Crss Feedback Capacitance 10 PF VDS = -10 V, VGS = 0, f= 1.0 MHz NV Noise Voltage 16 20 mV See test circuit 'gss Gate Cutoff Current 1.0 nA VGS = 20 V, VQg = 0 VGS(off) Gate to Source Cutoff Voltage 0.2 1.5 V VDS = -10 V, lD=-10 M A Classification of loss Rank K L M N 'DSS(mA) -1.0-6.0 -5.0-10 -9.0-14 -13-18 'DSS Test Conditions : Vqs=_ V, VGg = 0 Nippon Electric Co,Ltd 2SJ44 2SJ44 TYPICAL CHARACTERISTICS (Ta = 25 Â°C unless otherwise noted) NEC ELECTRON DEVICE 600 500 400 I I-Q- TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Free Air \ \ \ \ \ \ \ \ 25 50 75 100 125 Ta -Ambient Temperature -"C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -2 Vgs=o 0 1 V / --- ( 0 .2 V / 1Â»-"- 1 0 3 V I 0.4 V 0.5 V 0 -4 -8 -12 -16 -20 Vpg-Drain to Source Voltage-V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -6 VG; = 0 1 V f 0 / 2 V V 0 / 0 3 V // .4 V 5 V Â£ - 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 Vpg - Drain to Source Voltage -V DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE VDS=-10V \ \ \ \ \ \ \ \ 0.2 0.4 0.6 0.8 1.0 VQg-Gate to Source Voltage-V FORWARD TRANSFER ADMITTANCE vs. ZERO-GATE VOLTAGE DRAIN CURRENT e E 2.0 VDS=-10 V f = 1.0 kHz ly fs'lClD = = - 1.0 mA . 'dss -2.0 -5.0 -10 -20 -50 -100 -Zero-Gate Voltage Drain Current -mA GATE TO SO ZERO-GATE > 10 URCE CUTOFF VOLTAGE vs. VOLTAGE DRAIN CURRENT Ã�0 S 5.0 2.0 0.2 VDS=-10 V 'D = - 10 /Â¿A -1.0 -2.0 -5.0 -10 -20 -50 -100 'DSS"Zero-Gate Voltage Drain Current-mA INPUT AND FEEDBACK CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100 r O u c ra ra Q. O. ra o O ra 1 I S3 1.0 -1.0 VGS = 0 f =1.0 kHz ^iss -2.0 VdS" -5.0 -10 -20 -50 -Drain to Source Voltage-V NOISE VOLTAGE TEST CIRCUIT lD= -1 mA I NVr.m.s. (FLAT) VdS^"4 V, Iq = -1.0 mA, Rq = 0, Gv= 100 dB, f = 10 Hz- 1.0 kHz (at -3.0 dB) Nippon Electric Co., Ltd. INTERNATIONAL ELECTRON DEVICES DIV. NEC Building, 33-1, Shiba Gochome M.inato-ku, Tokyo 108, Japan Tel: Tokyo 454-1111 Telex Address: NECTOK J22686 J22686 Cable Address: MICROPHONE TOKYO NEC HONG KONG Limited Flat A, 7/F., Chuan Kei Factory Building, No. 15-23, Kin Hong Street, Kwai Chung, New Territories, Hong Kong Tel: 0-242824,242825 Telex Address: HKNEC HX 84561 NEC SINGAPORE PTE. LTD. JTC Flatted Factory Building, Block 12, 50 Kallang Bahru, Kallang Basin Industrial Estate Singapore 1233 Tel: 2923616, 2925648 Telex Address: NECSIN RS 24350 NEC HONG KONG Limited, Taipei Branch Room 701 ChiÃ¹ Bldg. 152 Sec. 1, Chung Shan N. Road Taipei Taiwan Tel: 5224192, 5224258 Telex Address: HKNEC TP 22372 TC-3344A TC-3344A OCT. -16 -81M Printed in Japan