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Part : SUP75N03-04-E3 Supplier : Vishay Siliconix Manufacturer : Bristol Electronics Stock : 100 Best Price : $2.5090 Price Each : $5.3760
Part : SUP75N0304E3 Supplier : Vishay Intertechnology Manufacturer : ComSIT Stock : 300 Best Price : - Price Each : -
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SUP75N03 Datasheet

Part Manufacturer Description PDF Type
SUP75N03-04 Vishay Intertechnology N-Channel Enhancement-Mode MOSFET, 4-mohm rDS(on) Original
SUP75N03-04 Vishay Siliconix N-Channel 30-V (D-S), 175°C MOSFET Original
SUP75N03-04-E3 Vishay Transistor Mosfet N-CH 30V 75A 3TO-220AB Original
SUP75N03-04 SPICE Device Model Vishay N-Channel Enhancement-Mode MOSFET, 4mOhm rDS(on) Original
SUP75N03-07 Vishay Siliconix N-Channel 30-V (D-S) 175°C MOSFET Original
SUP75N03-07-E3 Vishay Transistor Mosfet N-CH 30V 75A 3TO-220AB Original
SUP75N03-07 SPICE Device Model Vishay N-Channel 30-V (x-S) MOSFET Original

SUP75N03

Catalog Datasheet MFG & Type PDF Document Tags

SUP75N03-04

Abstract: 4431 mosfet SUP75N03-04_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in , . Document Number: 68351 Revision: 03-Jan-08 www.vishay.com 1 SUP75N03-04_RC Vishay Siliconix R-C , -Jan-08 SUP75N03-04_RC Vishay Siliconix Document Number: 68351 Revision: 03-Jan-08 www.vishay.com 3
Vishay Siliconix
Original
AN609 4431 mosfet

SUP75N03-04

Abstract: SUB75N03-04 SUP/SUB75N03-04 Vishay Siliconix N-Channel 30-V (D-S), 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) () 30 0.004 · TrenchFET® Power MOSFETs · 175 °C Rated Maximum Junction Temperature ID (A) 75a Available RoHS* COMPLIANT TO-220AB D TO-263 DRAIN connected to TAB DRAIN connected to TAB G D S G G D S Top View SUB75N03-04 Top View SUP75N03-04 S Ordering Information: SUP75N03-04 SUP75N03-04-E3 (Lead (Pb)-free) SUB75N03
Vishay Siliconix
Original
SUB75N03-04-E3 S-62484-R

SUP75N03-04

Abstract: 70745 SUP/SUB75N03-04 Vishay Siliconix N-Channel 30-V (D-S), 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) () 30 0.004 · TrenchFET® Power MOSFETs · 175 °C Rated Maximum Junction Temperature ID (A) 75a Available RoHS* COMPLIANT TO-220AB D TO-263 DRAIN connected to TAB DRAIN connected to TAB G D S G G D S Top View SUB75N03-04 Top View SUP75N03-04 S Ordering Information: SUP75N03-04 SUP75N03-04-E3 (Lead (Pb)-free) SUB75N03
Vishay Siliconix
Original
70745

SUP75N03-07

Abstract: SUB75N03-07 SUP/SUB75N03-07 Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) ID (A) 0.007 @ VGS = 10 V 75a 0.01 @ VGS = 4.5 V 30 rDS(on) (W) 70 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N03-07 Top View N-Channel MOSFET SUP75N03-07 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20
Vishay Siliconix
Original
S-000652--R

SUB75N03

Abstract: SUP75N03-04 SUP/SUB75N03-04 N-Channel Enhancement-Mode MOSFET, 4-mW rDS(on) Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) 30 0.004 75a D TO-220AB TO263 G DRAIN connected to TAB G D S Top View SUB75N0304 DRAIN connected to TAB G D S S Top View SUP75N03-04 N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter Symbol Unit VGS Gate-Source Voltage Limit "20 75a V TC = 25_C Continuous Drain Current (TJ = 175_C) ID TC
Temic Semiconductors
Original
S-53900--R

sum45n25

Abstract: PPAP 0.004 0.007 85 71 166 175 SUP75N03-04 SINGLE 30 20 0.004 0.007 75 , 85 65 SUP75N03-07 SINGLE 30 20 0.007 0.01 75 SUP70N03-09BP SINGLE 30 , 20 0.014 SUP75N03-04 SINGLE N TO-220 30 20 0.004 VGS = 10 V VGS = 4.5 V , 166 1 SUP75N03-07 SINGLE N TO-220 30 20 0.007 0.01 75 70 120 1
Vishay Siliconix
Original
sum45n25 PPAP PPAP for thermistor SQ7414EN 0034D sud*45N05-20L VMN-SG2117-0705

irl3803 equivalent

Abstract: Diode BAY 61 SUP75N03-04 SUB75N03-04 IRL3803 IRL3803S - - FDP7030BL FDB7030BL - - IRF7811 - SI4410DY
Intersil
Original
HUF76145P3 HUF76145S3S HUF76143P3 HUF76143S3S HUF76139P3 HUF76139S3S irl3803 equivalent Diode BAY 61 Si4425DY equivalent fds6680a equivalent ITF87012SVT1 LC0001 LC-00011
Abstract: SUP/SUB75N03-07 Siliconix N-Channel Enhancement-Mode Transistors New Product PRODUCT SUMMARY V (BR)DSS (V) r DS(ON) ^oG (-2) d (A) 75a 70 D Q 0.007 @ V GS= 10 V 30 0.01 @ VGS= 4.5 V TO-220AB o DRAIN connected to TAB TO-263 t 1 in G D S o Top View G D S Top View SUP75N03-07 SUB75N03-07 N-Channel MOSFET s ABSOLUTE M AXIMUM RATINGS (TA = 25° C UNLESS OTHERWISE NOTED) PARAMETER Drain-Source Voltage Gate-Source Voltage Tc = 25-C Continuous Drain Current (Tj -
OCR Scan
TQ-220AB S-57585--

70745

Abstract: SUP/SUB75N03-04 Vishay Siliconix N-Channel 30-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 30 0.004 75a D TO-220AB TO-263 G DRAIN connected to TAB DRAIN connected to TAB G D S Top View SUB75N03-04 G D S S Top View SUP75N03-04 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol TC = 25_C Continuous Drain Current (TJ = 175_C) TC = 125_C Pulsed Drain Current
Vishay Siliconix
Original
S-57253--R

SUB75N03-07

Abstract: SUP75N03-07 SUP/SUB75N03-07 Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) ID (A) 0.007 @ VGS = 10 V 75a 0.01 @ VGS = 4.5 V 30 rDS(on) (W) 70 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N03-07 Top View N-Channel MOSFET SUP75N03-07 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20
Vishay Siliconix
Original

HRF3205 equivalent

Abstract: IRFP064N equivalent -8 TO-220AB TO-251AA TO-252AA X-REF D/E ? E E E E Comments SUP75N03-04 SUB75N03
Intersil
Original
IRF3205 BUK7514-55 SMP15N05 HRF3205 equivalent IRFP064N equivalent IRF3205 equivalent IRFz44n equivalent irf3205 ups irf3710 equivalent LC00004 HUF75545P3 SUP75N08-10 HUF75545S3S HUF75645P3 HUF75645S3S
Abstract: SUP/SUB75N03-04 Siliconix N-Channel 30-V (D-S), 175_C MOSFET New Product Product Summary V(BR)DSS (V) 30 TO-220AB TO263 rDS(on) (W) 0.004 ID (A) 75a D DRAIN connected to TAB DRAIN connected to TAB G D S Top View SUP75N03-04 G D S Top View SUB75N0304 G S N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Vishay Siliconix
Original

mosfet cross reference

Abstract: SMP40N06 SUP70N06-14 NDP7060 TO-220, N Si9925DY FDS8926A SO-8, Dual N SUP75N03-04 FDP7030L TO-220, N Si9926DY FDS8926A SO-8, Dual N SUP75N03-07 FDP7030L TO-220, N Si9928DY
-
Original
IRF7206 IRF7303 SUP40N06-25L mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY IRFZ44 TO-263 SMP60N03-10L 2N7000 IRF7203 FDS9435A 2N7002 IRF7204 NDS8434A

S0413

Abstract: SUB75N03-04 SUP/SUB75N03-04 Vishay Siliconix N-Channel 30-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 30 0.004 75a D TO-220AB TO-263 G DRAIN connected to TAB DRAIN connected to TAB G D S Top View SUB75N03-04 G D S S Top View SUP75N03-04 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Unit VGS Gate-Source Voltage Limit "20 V 75a TC = 25_C Continuous Drain
Vishay Siliconix
Original
S0413 S-04137--R

SUB75N03-04

Abstract: SUP75N03-04 SUP/SUB75N03-04 Vishay Siliconix N-Channel 30-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 30 0.004 75a D TO-220AB TO-263 G DRAIN connected to TAB DRAIN connected to TAB G D S Top View SUB75N03-04 G D S S Top View SUP75N03-04 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Unit VGS Gate-Source Voltage Limit "20 V 75a TC = 25_C Continuous Drain
Vishay Siliconix
Original

SUB75N03-07

Abstract: SUP75N03-07 SUP/SUB75N03-07 Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) ID (A) 0.007 @ VGS = 10 V 75a 0.01 @ VGS = 4.5 V 30 rDS(on) (W) 70 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N03-07 Top View N-Channel MOSFET SUP75N03-07 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20
Vishay Siliconix
Original

75APF

Abstract: SUP75N03-04 SUP/SUB75N03-04 N-Channel Enhancement-Mode MOSFET, 4-mW rDS(on) Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) 30 0.004 75a D TO-220AB TO263 G DRAIN connected to TAB G D S Top View SUB75N0304 DRAIN connected to TAB G D S S Top View SUP75N03-04 N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter Symbol Unit VGS Gate-Source Voltage Limit "20 75a V TC = 25_C Continuous Drain Current (TJ = 175_C) ID TC
Temic Semiconductors
Original
75APF S-49547--R

mosfet bs250

Abstract: Si4730 -Feb-01 0.004 0.014 0.009 rDS(on) @ 1.8V Single N SUB75N03-04 SUP75N03-04 SUB85N03-04P SUP85N03-04P SUB75N03-07 SUP75N03-07 SUB85N03-07P SUP85N03-07P SUB70N03-09BP SUP70N03-09BP SUB70N03
Vishay Siliconix
Original
VN66AFD mosfet bs250 Si4730 VN10KLS SI1403DL Si4835DY si5504 4831DY 4833DY 4852DY 4816DY 4810DY 4818DY

fqp60n06

Abstract: SSH6N80 -14 SUB75N05-06 SUB75N08-10 SUD15N06-90L SUD25N06-45L SUP40N06-25L SUP45N03-13L SUP60N06-18 SUP75N03-07
STMicroelectronics
Original
fqp60n06 SSH6N80 spb32N03l SSP80N06A IRF540 application rfp60n06 STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L

fqp60n06

Abstract: spb32N03l -14 SUB75N05-06 SUB75N08-10 SUD15N06-90L SUD25N06-45L SUP40N06-25L SUP45N03-13L SUP60N06-18 SUP75N03-07
STMicroelectronics
Original
FQP50N10 STP55NF06 AND ITS EQUIVALENT FSD6680 HGTG*N60A4D SFP70N03 irf630 irf640 STP80NE03L-06 STS4DPF30L STB70NF03L STB55NF03L STW18NB40 STS8NFS30L

CEP83A3 equivalent

Abstract: CEP50N06 IRL2203N IRL2203NS IRF3707ZCS IRF3707ZCL IRF3707Z IRL3103S AOB418 SUP75N03-07 STP80NE03L
-
Original
CEM3040 CEP83A3 equivalent CEP50N06 cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent 2928-8J CEM2082 CEM2108 CEM8206 CEM8207 CEM8208
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