SUM60N04-12LT SUM60N04-12LT-E3 LMV321 SUM60N04-12L SC-70 LMV331 SUB60N04-15LT

Vishay Siliconix Temperature Sensing MOSFET, N-Channel 40-V (D-S) FEATURES D D D D D D D D D D APPLICATIONS Temperature-Sense

SUM60N04-12LT SUM60N04-12LT Vishay Siliconix Temperature Sensing MOSFET, N-Channel 40-V (D-S) FEATURES D D D D D D D D D D APPLICATIONS Temperature-Sense Diodes for Thermal Shutdown TrenchFETr Power MOSFET 175_C Maximum Junction Temperature ESD Protected: 2000 V Logic-Level Low On-Resistance Avalanche Rated Low Gate Charge Fast Turn-On Time 100% Rg Tested 5-Lead D2PAK D Automotive D Industrial PRODUCT SUMMARY V(BR)DSS (V) ID (A) 0.009 @ VGS = 10 V 60a 0.012 @ VGS = 4.5 V 40 rDS(on) (W) 60 Notes a. Package Limited DESCRIPTION The SUM60N04-12LT SUM60N04-12LT is a 40-V n-channel, 15-mW logic level MOSFET in a 5-lead D2PAK package built on the Vishay Siliconix proprietary high-cell density TrenchFET technology. Two anti-parallel electrically isolated poly-silicon diodes are used to sense the temperature changes in the MOSFET. The gate of the MOSFET is protected from high voltage transients by two back-to-back poly-silicon zener diodes. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION D2Pak TO-263, 5 Leads D T1 D1 G D2 T2 1 2 3 4 5 S G T1 D T2 S N-Channel MOSFET Ordering Information: SUM60N04-12LT SUM60N04-12LT SUM60N04-12LT-E3 SUM60N04-12LT-E3 (Lead Free) Document Number: 71620 S-32523-Rev. B, 08-Dec-03 www.vishay.com 1 SUM60N04-12LT SUM60N04-12LT Vishay Siliconix ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 40 Gate-Source Voltage VGS "20 VGS Clamp Current IG Continuous Drain Current (TJ = 175_C) Tc = 25_C Tc = 100_C Avalanche Current 50 L = 0.1 mH ID mA 50 A 50 EAR 125 Source-to-Anode Voltage VSA 100 Source-to-Cathode Voltage VSC 100 TC = 25_C Maximum Power Dissipationa TA = Operating Junction and Storage Temperature Range 25_Cd V 60a IAR Repetitive Avalanche Energy Unit V 110 PD TJ, Tstg mJ 3.75 -55 to 175 W _C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Junction-to-Ambientd RthJA 40 Junction-to-Case RthJC 1.35 Unit _C/W Notes: a. Package limited. b. Duty Cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1-inch square PCB FR4. www.vishay.com 2 Document Number: 71620 S-32523-Rev. B, 08-Dec-03 SUM60N04-12LT SUM60N04-12LT Vishay Siliconix MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = 1 mA 40 VGS VDS = 0 V, IG = 20 mA Typ 10 1 Max Unit 20 V Static Drain-Source Breakdown Voltage VGS Clamp Voltage VGS(th) VDS = VGS, IDS = 1 mA Gate-Body Leakage IGSS VDS = 0 V, VGS = "5 V Zero Gate Voltage Drain Current IDSS Gate Threshold Voltage Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V 50 VDS = 40 V, VGS = 0 V, TJ = 175_C rDS( ) DS(on) 250 0.0075 0.0135 VGS = 10 V, ID = 20 A, TJ = 175_C 0.018 Sense Diode Forward Voltage Increase Forward Transconductancea 0.0095 m mA 0.009 VGS = 10 V, ID = 20 A, TJ = 125_C VGS = 4.5 V, ID = 20 A Sense Diode Forward Voltage nA 1 VDS = 40 V, VGS = 0 V, TJ = 125_C VGS = 10 V, ID = 20 A Drain-Source On-State Drain Source On State Resistancea 2 "250 W 0.012 VFD1 IF = 250 mA 675 735 VFD2 IF = 250 mA 675 735 DVF From IF = 125 mA to IF = 250 mA 25 50 gfs VDS = 15 V, ID = 20 A 35 mV S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qgs 560 Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec 51 70 5.5 VDS = 20 V, VGS = 10 V, ID = 25 A , , Qgd nC 12 Rg 1.2 td(on) 4.1 20 VDD = 20 V, RL = 0.8 W 70 120 td(off) ID ] 25 A, VGEN = 10 V, Rg = 2.5 W 35 70 20 40 tf ns 25_C)b IS 60 Pulsed Current ISM 240 Forward Voltagea VSD IF = 60 A, VGS = 0 V trr IF = 60 A, di/dt = 100 A/ms Reverse Recovery Time W 40 tr Source-Drain Diode Ratings and Characteristics (TC = Continuous Current pF 210 Qg Gate-Source Chargec 1920 VGS = 0 V, VDS = 25 V, f = 1 MHz A 1.4 40 V 60 ns Notes: a Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c Independent of operating temperature. Document Number: 71620 S-32523-Rev. B, 08-Dec-03 www.vishay.com 3 SUM60N04-12LT SUM60N04-12LT Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 250 200 VGS = 10 thru 7 V 160 I D - Drain Current (A) 200 I D - Drain Current (A) TC = -55_C 6V 5V 150 100 4V 50 25_C 125_C 120 80 40 1, 2 V 3V 0 0 0 2 4 6 8 10 0 VDS - Drain-to-Source Voltage (V) 2 Transconductance 5 6 7 8 On-Resistance vs. Drain Current r DS(on) - On-Resistance ( W ) 60 25_C 125_C 40 20 0 0.015 0.012 VGS = 4.5 V VGS = 10 V 0.009 0.006 0.003 0.000 0 20 40 60 80 100 0 20 40 ID - Drain Current (A) V GS - Gate-to-Source Voltage (V) Ciss 2000 1500 1000 Coss Crss 80 100 120 Gate Charge 15 2500 500 60 ID - Drain Current (A) Capacitance 3000 C - Capacitance (pF) 4 0.018 TC = -55_C 0 VGS = 20 V ID = 25 A 12 9 6 3 0 0 8 16 24 32 VDS - Drain-to-Source Voltage (V) www.vishay.com 4 3 VGS - Gate-to-Source Voltage (V) 80 g fs - Transconductance (S) 1 40 0 15 30 45 60 75 Qg - Total Gate Charge (nC) Document Number: 71620 S-32523-Rev. B, 08-Dec-03 SUM60N04-12LT SUM60N04-12LT Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 20 A TJ = 150_C 1.2 0.8 0.4 0.0 -50 Source-Drain Diode Forward Voltage 100 I S - Source Current (A) r DS(on) - On-Resistance (W) (Normalized) 2.0 -25 0 25 50 75 100 125 150 TJ = 25_C 10 1 175 0 0.3 TJ - Junction Temperature (_C) Avalanche Current vs. Time 300 0.9 1.2 1.4 Drain-Source Breakdown vs. Junction Temperature 60 ID = 1 mA 100 V(BR)DSS (V) IAV (A) @ TJ = 25_C I Dav (A) 0.6 VSD - Source-to-Drain Voltage (V) 10 IAV (A) @ TJ = 150_C 1 40 30 -50 0.1 0.00001 0.001 0.01 tin (Sec) 0.0001 0.1 1 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) Sense Diode Forward Voltage vs. Temperature 1.0 50 2000 Sense Diode Forward Voltage IF (mA) @ 25_C 0.8 1600 0.6 1200 I F ( mA) V F (V) VF (V) @ IF = 250 mA VF (V) @ IF = 125 mA 0.4 0.2 0.0 -50 800 400 -25 0 25 50 75 100 125 TJ - Junction Temperature (_C) Document Number: 71620 S-32523-Rev. B, 08-Dec-03 150 175 0 0.0 0.2 0.4 0.6 0.8 1.0 VF (V) www.vishay.com 5 SUM60N04-12LT SUM60N04-12LT Vishay Siliconix TYPICAL CHARACTERISTICS OF G-S CLAMPING DIODES (25_C UNLESS NOTED) Gate-Source Voltage vs. Gate Current 10 1 10-1 IG (mA) @ 150_C I G (mA) 10-2 10-3 IG (mA) @ 25_C 10-4 10-5 10-6 10-7 0 4 8 12 20 16 VGS (V) THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 500 75 I D - Drain Current (A) I D - Drain Current (A) 10 ms 60 45 30 100 Limited by rDS(on) 100 ms 10 10 ms 100 ms dc TC = 25_C Single Pulse 15 0 1 0 25 50 75 100 125 150 175 0.1 10 100 Normalized Thermal Transient Impedance, Junction-to-Case 2 1 1 VDS - Drain-to-Source Voltage (V) TC - Case Temperature (_C) Normalized Effective Transient Thermal Impedance 1 ms Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-5 10-4 10-3 10-2 10-1 1 3 Square Wave Pulse Duration (sec) www.vishay.com 6 Document Number: 71620 S-32523-Rev. B, 08-Dec-03 SUM60N04-12LT SUM60N04-12LT Vishay Siliconix APPLICATIONS +5 V R1 180 kW 1% C3 0.1 mF R5, 18 kW IC1, LMV321 LMV321 C1 560 pF INPUT R3, 18 kW R7 10 kW 1% R6, 560 W - Gate Output Signal + R4, 560 kW, 1% R2 22 kW 1% SUM60N04-12L SUM60N04-12L T C2 0.1 mF Signal Ground Power Ground FIGURE 1. The SUM60N04-12LT SUM60N04-12LT provides a non-committed diode to allow temperature sensing of the actual MOSFET chip. The addition of one simple comparator and a few other components is all that is required to implement a temperature protected MOSFET. Since it has a very tight tolerance on forward voltage, the forward voltage of the diode can be used to provide to shutdown signal. The diode forward voltage falls to around 0.4 V with a bias current of 250 mA when the MOSFET chip is close to the maximum permitted temperature value. The external comparator used to detect over temperature can also be used as a driver stage for the MOSFET, meaning that the on/off input is logic compatible, and can be driven from a logic gate. A typical circuit is shown in Figure 1. Here a LMV321 LMV321 operational amplifier is used to drive the MOSFET, and as a comparator to when the maximum junction temperature is reached. The circuit will turn on once more when the chip has cooled to approximately 110_C, and can cycle on and off until the fault is cleared or the power is removed. This circuit has assumed a 5-V rail is available, but the circuit could easily be adapted for a 12-V rail, for example. The LMV321 LMV321 op amp was selected to give reasonable output current to drive the MOSFET at a reasonable price. The SC-70 SC-70 package means that the protection circuit uses very little board space. However the limited output current means that it can only be used in slow switching applications, where one microsecond switching time and limited dv/dt immunity can be Document Number: 71620 S-32523-Rev. B, 08-Dec-03 accepted. For PWM and other faster applications, a buffer should be added to drive the MOSFET, or the schematic in Figure 2 used to give fast switching speed. The reference voltage for the trip point is derived from the 5-V rail, which should have reasonable voltage accuracy and stability (" 0.5 V). A voltage reference could be added if required, but the circuit is only intended to make the MOSFET invulnerable to drastic faults that might otherwise cause it to fail, not to give a precise shutdown point. 1% resistors are used to provide a reference voltage of 0.545 V, giving a nominal rising trip point of around 155_C, allowing for the hysteresis drop over R7. A 560-pF capacitor across the inputs of the comparator provides some noise immunity and gives a response time of around a micro second, just faster than the switching speed of the MOSFET in this circuit (faster response has diminishing returns as the turn-off time is fixed). This does have a side effect of introducing such a delay at turn-on. If this is an issue (although if this delay is an issue, the switching time should be reviewed also), a separate driver could be added using a comparator for over temperature detection only as shown in Figure 2. The diode is then left biased whenever the power is applied to the load and there is no turn-on delay. In a very noisy environment C1 should be increased and additional capacitors may also be required from each input of the comparator to ground and on the logic input. www.vishay.com 7 SUM60N04-12LT SUM60N04-12LT Vishay Siliconix The bias current of 250-mA nominal is derived from the input signal. In this manner, a simple comparator can be used as a driver for normal on/off operation and a fault detector circuit. The circuit used to provide the input signal must therefore be able to source 0.25 mA with no significant voltage drop. The LMV321 LMV321 can provide a output current of 60-mA typical, which provides reasonable switching time for non-PWM applications. A 560-W resistor is added in series to protect the op amp and to prevent instability, but will result in switching times of several micro seconds. A lower value may be possible depending on layout, but may violate conditions recommended by the op amp manufacturer. Hysteresis is added by means of a resistor network around the comparator. Approximately 40_C hysteresis is added using the components shown. This hysteresis could be reduced if necessary by increasing the value of R4. Another means of implementing hysteresis is to use the output of the comparator to provide some of the bias current for the sensing diode. When the comparator output is low (tripped/off), the bias current is reduced by, say, 150 mA, causing the forward voltage to drop by around 50 mV. This concept would also allow a lower sourcing capability in the logic circuit providing the on/off signal and therefore should be used if input current requirements become a problem. With the input high, bias current flows and as long as the forward voltage of the diode is higher than 0.465 V, the comparator output is high and the MOSFET is on. If the forward voltage of the diode drops below 0.465 V, the comparator output goes low and the MOSFET is turned off. The gate drive voltage can also be used as an output signal (if required) for logic to interpret and to signify that there is a fault. Note the cathode of the sensing diode should NOT be connected directly to the source of the MOSFET as the noise introduced by high currents in the source loop could affect operation of the sensing circuit. A separate signal ground should be used and connect to power ground at one point only. A variation on this schematic is shown in Figure 2. Here a low cost comparator (again in a SOT-23 or SC-70 SC-70) is used to provide a fault output signal only. The diode bias current is taken from the 5 V. In this manner the diode bias is applied at all times, so the noise filtering capacitor, C1 will not introduce a turn-on delay. The fault output signal could be used to enable the gate driver as shown, or fed to larger monitoring circuit to shutdown the MOSFET. +5 V R1 180 kW 1% C3 0.1 mF R5 10 kW IN IC1, LMV331 LMV331 C1 560 pF R3, 18 kW R6 10 kW 1% - DRIVER ENABLE + R4, 560 kW, 1% R2 22 kW 1% SUB60N04-15LT SUB60N04-15LT C2 0.1 mF Signal Ground Power Ground FIGURE 2. www.vishay.com 8 Document Number: 71620 S-32523-Rev. B, 08-Dec-03 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1