AN609 Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values - Datasheet Archive

 

Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using

 

SUM60N02-3m9P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. Note: For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform. R-C THERMAL MODEL FOR TANK CONFIGURATION R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Case Foot RT1 768.4800 m 358.7936 m N/A RT2 3.7481 231.0621 m N/A RT3 18.2019 137.4659 m N/A RT4 17.4014 522.6784 m N/A Thermal Capacitance (Joules/°C) Junction to Ambient Case Foot CT1 11.5324 m 121.4438 m N/A CT2 833.5621 m 3.2831 m N/A CT3 5.6793 306.8697 m N/A CT4 5.7647 82.9354 m N/A This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 69931 Revision: 12-Dec-07 www.vishay.com 1 SUM60N02-3m9P_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION R-C VALUES FOR FILTER CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Case Foot RF1 943.3000 m 266.7496 m N/A RF2 6.3694 294.0932 m N/A RF3 16.1027 654.2467 m N/A RF4 16.5846 34.9105 m N/A Thermal Capacitance (Joules/°C) Junction to Ambient Case Foot CF1 25.0010 m 3.0900 m N/A CF2 700.3513 m 39.0567 m N/A CF3 2.1233 2.5605 m N/A CF4 861.5573 m 29.0843 m N/A Note: NA indicates not applicable Reference: [1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002 www.vishay.com 2 Document Number: 69931 Revision: 12-Dec-07 SUM60N02-3m9P_RC Vishay Siliconix Document Number: 69931 Revision: 12-Dec-07 www.vishay.com 3