SUD50P04-08 2002/95/EC SUD50P04-08-GE3 - Datasheet Archive

 

Vishay Siliconix P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 0.0081 at VGS = - 10 V - 50d 0.0117 at

 

SUD50P04-08 SUD50P04-08 Vishay Siliconix P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 0.0081 at VGS = - 10 V - 50d 0.0117 at VGS = - 4.5 V - 40 ID (A) - 48d · Halogen-free According to IEC 61249-2-21 Definition · TrenchFET® Power MOSFET · 100 % Rg and UIS Tested · Compliant to RoHS Directive 2002/95/EC 2002/95/EC Qg (Typ.) 60 APPLICATIONS · Power Switch · Load Switch in High Current Applications · DC/DC Converters S TO-252 G Drain Connected to Tab G D S D Top View P-Channel MOSFET Ordering Information: SUD50P04-08-GE3 SUD50P04-08-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 40 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C ID - 50d a L = 0.1 mH Single Avalanche Energy TC = 25 °C Maximum Power Dissipationa TA = 25 °Cc - 100 IAS Avalanche Current V - 50d IDM Pulsed Drain Current Unit - 46 EAS 106 A PD 73.5 mJ b 2.5 W TJ, Tstg - 55 to 150 °C Symbol Operating Junction and Storage Temperature Range Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount) c Junction-to-Case (Drain) RthJA 50 RthJC 1.7 °C/W Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). d. Package limited. Document Number: 65594 S10-0034-Rev. A, 11-Jan-10 www.vishay.com 1 SUD50P04-08 SUD50P04-08 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VDS = 0 V, ID = - 250 µA - 40 VGS(th) VDS = VGS, ID = - 250 µA -1 IGSS Typ. VDS = 0 V, VGS = ± 20 V Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage - 2.5 ± 250 VDS = - 40 V, VGS = 0 V On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea IDSS - 50 nA -1 VDS = - 40 V, VGS = 0 V, TJ = 125 °C VDS = - 40 V, VGS = 0 V, TJ = 150 °C Zero Gate Voltage Drain Current V - 250 VDS - 10 V, VGS = - 10 V ID(on) - 50 A VGS = - 10 V, ID = - 22 A 0.0081 0.0097 0.0117 VDS = - 15 V, ID = - 22 A gfs 0.0067 VGS = - 4.5 V, ID = - 19 A RDS(on) µA 45 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Turn-On Delay Timec Rise Timec VDS = - 20 V, VGS = - 10 V, ID = - 20 A Fall Timec td(off) 106 VDS = - 20 V, VGS = - 4.5 V, ID = - 20 A 159 60 90 22 f = 1 MHz VDD = - 20 V, RL = 2 ID - 10 A, VGEN = - 10 V, Rg = 1 0.4 1.8 3.6 15 12 18 70 105 27 - 50 Pulsed Current ISM - 100 Forward Voltagea VSD Peak Reverse Recovery Current Reverse Recovery Charge IF = - 10 A, VGS = 0 V - 0.8 IF = - 10 A, dI/dt = 100 A/µs Qrr 33 A - 1.5 V 35 trr IRM(REC) ns b IS Reverse Recovery Time 23 18 tf Drain-Source Body Diode Ratings and Characteristics TC = 25 °C Continuous Current nC 27 td(on) tr c pF 570 500 Rg Gate Resistance Turn-Off Delay Time 5380 VGS = 0 V, VDS = - 20 V, f = 1 MHz 53 ns -2 -3 A 50 nC Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 65594 S10-0034-Rev. A, 11-Jan-10 SUD50P04-08 SUD50P04-08 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.015 VGS = 10 V thru 5 V I D - Drain Current (A) R DS(on) - On-Resistance () VGS = 4 V 80 60 40 20 0.012 VGS = 4.5 V 0.009 VGS = 10 V 0.006 VGS = 3 V 0 0.0 0.003 0.5 1.0 1.5 2.0 2.5 0 20 40 VDS - Drain-to-Source Voltage (V) 80 100 ID - Drain Current (A) Output Characteristics On-Resistance vs. Drain Current 0.030 8 0.024 R DS(on) - On-Resistance () 10 I D - Drain Current (A) 60 6 4 TC = 25 °C 0.018 TJ = 150 °C 0.012 TJ = 25 °C 0.006 2 TC = 125 °C TC = - 55 °C 0 0 1 2 3 0.000 2 4 VGS - Gate-to-Source Voltage (V) 6 8 10 VGS - Gate-to-Source Voltage (V) Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage 10 100 ID = 20 A VGS - Gate-to-Source Voltage (V) TC = - 55 °C g fs - Transconductance (S) 4 75 TC = 25 °C TC = 125 °C 50 25 8 VDS = 20 V 6 VDS = 10 V VDS = 32 V 4 2 0 0 0 10 20 30 40 50 0 30 60 90 ID - Drain Current (A) Document Number: 65594 S10-0034-Rev. A, 11-Jan-10 Qg - Total Gate Charge (nC) Transconductance 120 Gate Charge www.vishay.com 3 SUD50P04-08 SUD50P04-08 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 - 1.0 10 ID = 250 µA VGS(th) (V) I S - Source Current (A) - 1.3 TJ = 150 °C TJ = 25 °C - 1.6 - 1.9 1 - 2.2 0.1 0.0 0.3 0.6 0.9 - 2.5 - 50 1.2 - 25 0 25 50 75 VSD - Source-to-Drain Voltage (V) 150 100 125 150 Threshold Voltage 8000 VDS - Drain-to-Source Voltage (V) - 43 6000 C - Capacitance (pF) 125 TJ - Temperature (°C) Source-Drain Diode Forward Voltage 100 Ciss 4000 2000 Coss ID = 250 µA - 45 - 47 - 49 Crss 0 0 10 20 30 - 51 - 50 40 - 25 0 25 50 75 VDS - Drain-to-Source Voltage (V) TJ - Junction Temperature (°C) Capacitance Drain Source Breakdown vs. Junction Temperature 80 2.0 ID = 20 A 60 I D - Drain Current (A) VGS = 10 V (Normalized) R DS(on) - On-Resistance 1.7 1.4 VGS = 4.5 V 1.1 Package Limited 40 20 0.8 0.5 - 50 0 - 25 0 25 50 75 100 125 150 0 25 50 75 100 TJ - Junction Temperature (°C) www.vishay.com 4 150 TC - Case Temperature (°C) On-Resistance vs. Junction Temperature 125 Current Derating Document Number: 65594 S10-0034-Rev. A, 11-Jan-10 SUD50P04-08 SUD50P04-08 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 1000 Limited by RDS(on)* 100 I D - Drain Current (A) I DAV (A) 100 µA TJ = 25 °C TJ = 150 °C 10 10 1 0.1 1 10-5 10-4 10-3 10-2 1 ms 10 ms, 100 ms 1 s, 10 s, DC TC = 25 °C Single Pulse 0.01 0.1 10-1 Time (s) BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Single Pulse Avalanche Current Capability vs. Time Safe Operating Area 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65594. Document Number: 65594 S10-0034-Rev. A, 11-Jan-10 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1